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    BOOKS DATA SHEET FOR ALL IC Search Results

    BOOKS DATA SHEET FOR ALL IC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL1G07FU Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Non-Inverter Buffer (Open Drain), USV, -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    BOOKS DATA SHEET FOR ALL IC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTORS 2SC3622, 3622A NPN SILICON EPITAXIAL TRANSISTOR FOR LOW–FREQUENCY POWER AMPLIFIERS AND SWITCHING FEATURES PACKAGE DRAWING UNIT: mm • High hFE: hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA • Low VCE(sat): VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.0 mA


    Original     		PDF 2SC3622, 2SC3622) 2SC3622A) 2SC3622 2SC3622A

    D1615

    Abstract: 2SC3622 2SC3622 transistor 2SC3622A 3622A
    Text: DATA SHEET SILICON TRANSISTORS 2SC3622, 3622A NPN SILICON EPITAXIAL TRANSISTOR FOR LOW–FREQUENCY POWER AMPLIFIERS AND SWITCHING FEATURES PACKAGE DRAWING UNIT: mm • High hFE: hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA • Low VCE(sat): VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.0 mA


    Original     		PDF 2SC3622, 2SC3622) 2SC3622A) 2SC3622 2SC3622A D1615 2SC3622 transistor 2SC3622A 3622A

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTORS 2SB1116, 1116A PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES PACKAGE DRAWING UNIT: mm • Low VCE(sat) VCE(sat) = −0.20 V TYP. (IC = −1.0 A, IB = −50 mA) • High PT in small dimension with general-purpose


    Original     		PDF 2SB1116, 2SD1616 2SB1116 2SB1116A

    2SB1453

    Abstract: NEC 2SB1453
    Text: DATA SHEET SILICON TRANSISTOR 2SB1453 PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SB1453 is a power transistor that can directly drive from PACKAGE DRAWING UNIT: mm the IC output. This transistor is ideal for motor drivers and solenoid


    Original     		PDF 2SB1453 2SB1453 NEC 2SB1453

    d1541

    Abstract: 2SB1669-Z 2SB1669 2SB1669-S
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SB1669 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SB1669 is a power transistor that can be directly driven from the output of an IC. This transistor is ideal for OA and FA equipment such as motor and solenoid drivers.


    Original     		PDF 2SB1669 2SB1669 O-220AB 2SB1669-S O-262 2SB1669-Z O-220SMD d1541 2SB1669-Z 2SB1669-S

    1116a

    Abstract: D1619 2SB1116 nec marking power amplifier 2sb1116a
    Text: DATA SHEET SILICON TRANSISTORS 2SB1116, 1116A PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES PACKAGE DRAWING UNIT: mm • Low VCE(sat) VCE(sat) = −0.20 V TYP. (IC = −1.0 A, IB = −50 mA) • High PT in small dimension with general-purpose


    Original     		PDF 2SB1116, 2SD1616 2SB1116 2SB1116A 1116a D1619 nec marking power amplifier 2sb1116a

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SB1669 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SB1669 is a power transistor that can be directly driven from the output of an IC. This transistor is ideal for OA and FA equipment such as motor and solenoid drivers.


    Original     		PDF 2SB1669 2SB1669 O-220AB 2SB1669-S O-262 2SB1669-Z O-220SMD

    2SB1453

    Abstract: NEC 2SB1453
    Text: DATA SHEET SILICON TRANSISTOR 2SB1453 PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SB1453 is a power transistor that can directly drive from PACKAGE DRAWING UNIT: mm the IC output. This transistor is ideal for motor drivers and solenoid


    Original     		PDF 2SB1453 2SB1453 NEC 2SB1453

    2SB1430

    Abstract: No abstract text available
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SB1430 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SB1430 is a Darlington power transistor that can directly PACKAGE DRAWING (UNIT: mm) drive from the IC output. This transistor is ideal for motor drivers


    Original     		PDF 2SB1430 2SB1430

    D1486

    Abstract: No abstract text available
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SD2162 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2162 is a Darlington power transistor that can directly drive from the IC output. This transistor is ideal for motor drivers and


    Original     		PDF 2SD2162 2SD2162 O-220 O-220) D1486

    2SD2161

    Abstract: No abstract text available
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SD2161 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2161 is a Darlington power transistor that can directly drive from the IC output. This transistor is ideal for motor drivers and


    Original     		PDF 2SD2161 2SD2161 O-220 O-220)

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SB1432 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SB1432 is a Darlington power transistor that can be directly ORDERING INFORMATION driven from the output of an IC. This transistor is ideal for OA and FA


    Original     		PDF 2SB1432 2SB1432 O-220 O-220)

    2sc3623

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTORS 2SC3623, 3623A NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND SWITCHING FEATURES PACKAGE DRAWING UNIT: mm • High hFE: hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA • Low VCE(sat): VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.0 mA


    Original     		PDF 2SC3623, 2SC3623) 2SC3623A) 2SC3623 2SC3623A

    d1352

    Abstract: 2sc3623 2SC3623A d13521ej4v0ds00
    Text: DATA SHEET SILICON TRANSISTORS 2SC3623, 3623A NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND SWITCHING FEATURES PACKAGE DRAWING UNIT: mm • High hFE: hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA • Low VCE(sat): VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.0 mA


    Original     		PDF 2SC3623, 2SC3623) 2SC3623A) 2SC3623 2SC3623A d1352 2SC3623A d13521ej4v0ds00

    NEC C11531E

    Abstract: 2SA812 2SC1623 C11531E C1984
    Text: DATA SHEET SILICON TRANSISTOR 2SA812 PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DRAWING Unit: mm • Complementary to 2SC1623 • High DC Current Gain: hFE = 200 TYP. (VCE = −6.0 V, IC = −1.0 mA) ) • High Voltage: VCEO = −50 V +0.1


    Original     		PDF 2SA812 2SC1623 C11531E) NEC C11531E 2SA812 2SC1623 C11531E C1984

    marking NEC rf transistor

    Abstract: NEC transistors
    Text: PRELIMINARY DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA895TS NPN SILICON RF TRANSISTOR WITH 2 ELEMENTS IN A 6-PIN SUPER LEAD-LESS MINIMOLD FEATURES • Built-in low voltage operation, low phase distortion transistor suited for OSC applications fT = 4.5 GHz TYP., S21e2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz


    Original     		PDF PA895TS S21e2 2SC5800) 2SC5800 PA895TS-T3 PU10335EJ01V0DS marking NEC rf transistor NEC transistors

    NEC TRANSISTOR MARKING CODE

    Abstract: date code marking NEC NEC MARKING CODE code marking NEC marking NEC rf transistor NEC Date code Marking nec npn rf NEC semiconductor
    Text: PRELIMINARY DATA SHEET NPN SILICON RF TRANSISTOR NE685M33 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN SUPER LEAD-LESS MINIMOLD FEATURES • Low noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 3 mA, f = 2 GHz • S21e = 11 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz


    Original     		PDF NE685M33 NE685M33 NE685M33-T3 PU10341EJ01V0DS NEC TRANSISTOR MARKING CODE date code marking NEC NEC MARKING CODE code marking NEC marking NEC rf transistor NEC Date code Marking nec npn rf NEC semiconductor

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTORS 2SD1616, 2SD1616A NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES PACKAGE DRAWING UNIT: mm • Low VCE(sat): VCE(sat) = 0.15 V TYP. (IC = 1.0 A, IB = 50 mA) • Large PT in small dimension with versatility


    Original     		PDF 2SD1616, 2SD1616A 2SB1116 2SD1616

    1116a

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTORS 2SD1616, 2SD1616A NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES PACKAGE DRAWING UNIT: mm • Low VCE(sat): VCE(sat) = 0.15 V TYP. (IC = 1.0 A, IB = 50 mA) • Large PT in small dimension with versatility


    Original     		PDF 2SD1616, 2SD1616A 2SB1116 2SD1616 1116a

    ultra low noise RF Transistor

    Abstract: NEC JAPAN NESG204619 10T70
    Text: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG204619 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.8 dB TYP., Ga = 11.0 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz


    Original     		PDF NESG204619 NESG204619-T1 ultra low noise RF Transistor NEC JAPAN NESG204619 10T70

    marking NEC rf transistor

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR 2SC5843 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD M16, 1208 PACKAGE FEATURES • Ideal for low noise, high-gain amplification NF = 0.9 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz


    Original     		PDF 2SC5843 2SC5843 2SC5843-T3 PU10353EJ01V0DS marking NEC rf transistor

    marking NEC rf transistor

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA873TS NPN SILICON RF TRANSISTOR WITH 2 ELEMENTS IN A 6-PIN SUPER LEAD-LESS MINIMOLD FEATURES • Built-in low voltage operation, low phase distortion transistor suited for OSC applications fT = 4.5 GHz TYP., S21e2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz


    Original     		PDF PA873TS S21e2 2SC5800) 2SC5800 PA873TS-T3 PU10334EJ01V0DS marking NEC rf transistor

    2SB1431

    Abstract: No abstract text available
    Text: '$7$ 6+ 7 6,/,&21 32:(5 75$16,6725 6% 313 6,/,&21 (3,7$;,$/ 75$16,6725 '$5/,1*721 &211(&7,21 25 /2:)5(48(1&< 32:(5 $03/,),(56 $1' /2:63(' 6:,7&+,1* The 2SB1431 is a Darlington power transistor that can directly PACKAGE DRAWING (UNIT: mm) drive from the IC output. This transistor is ideal for motor drivers


    Original     		PDF 2SB1431

    2SA733

    Abstract: 2SA733 Q equivalent PA33 transistor 2sa733 ALL 2sa733
    Text: DATA SHEET PNP SILICON TRANSISTOR 2SA733 PNP SILICON TRANSISTOR DESCRIPTION PACKAGE DRAWING Unit: mm The 2SA733 is designed for use in diver stage of AF amplifier. φ 5.2 MAX. FEATURES 5.5 MAX. • High hFE and Excellent Linearity: 200 TYP. hFE (VCE = −6.0 V, IC = −1.0 mA)


    Original     		PDF 2SA733 2SA733 2SA733 Q equivalent PA33 transistor 2sa733 ALL 2sa733