Untitled
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTORS 2SB1116, 1116A PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES PACKAGE DRAWING UNIT: mm • Low VCE(sat) VCE(sat) = −0.20 V TYP. (IC = −1.0 A, IB = −50 mA) • High PT in small dimension with general-purpose
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2SB1116,
2SD1616
2SB1116
2SB1116A
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Marvell 88e1111 register map
Abstract: 88E1111 88E1111 PHY registers map 88E1111 register map 88E1111 config 88E1111 registers Marvell PHY 88E1111 alaska register map Marvell PHY 88E1111 MDIO read write sfp Marvell 88E1111 application note Marvell PHY 88E111 alaska
Text: LatticeECP3 Marvell SGMII Physical/MAC Layer Interoperability December 2009 Technical Note TN1197 Introduction This technical note describes an SGMII physical/MAC layer interoperability test between a LatticeECP3 device and the Marvell 88E1111 PHY. Specifically, the document discusses the following topics:
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TN1197
88E1111
H0020
Marvell 88e1111 register map
88E1111 PHY registers map
88E1111 register map
88E1111 config
88E1111 registers
Marvell PHY 88E1111 alaska register map
Marvell PHY 88E1111 MDIO read write sfp
Marvell 88E1111 application note
Marvell PHY 88E111 alaska
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2SA1376
Abstract: transistor 2sc3478 transistor 2sa1376 2sc3478a
Text: DATA SHEET SILICON TRANSISTORS 2SA1376, 1376A PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH VOLTAGE AMPLIFIERS FEATURES PACKAGE DRAWING UNIT: mm • High voltage VCEO: −180 V / −200 V (2SA1376/2SA1376A) • Excellent hFE linearity • High total power dissipation in small dimension:
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2SA1376,
2SA1376/2SA1376A)
2SC3478
2SC3478A
2SA1376/2SA1376A
2SA1376
transistor 2sc3478
transistor 2sa1376
2sc3478a
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2SJ132
Abstract: 2SJ132-Z
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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2SJ132
Abstract: 2SJ132-Z
Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
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2SJ132
132-Z
2SJ132-ZIC
PW300
O-252MP-3Z
D16192JJ3V0DS003
TC-6281A
D16192JJ3V0DS
2SJ132-Z
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2SD1691
Abstract: 2SB1151
Text: PRELIMINARY PRODUCT INFORMATION SILICON POWER TRANSISTOR 2SD1691 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCEY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES PACKAGE DRAWING UNIT: mm • Large current capacity and low VCE(sat): IC(DC) = 5.0 A, IC(pulse) = 8.0 A
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2SD1691
O-126
2SB1151
2SD1691
2SB1151
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2SB1149
Abstract: 2SD1692
Text: PRELIMINARY PRODUCT INFORMATION SILICON POWER TRANSISTOR 2SD1692 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FEATURES PACKAGE DRAWING (UNIT: mm) • High DC current gain due to Darlington connection • Large current capacity and low VCE(sat)
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2SD1692
O-126
2SB1149
2SB1149
2SD1692
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2SB1149
Abstract: 2SD1692
Text: DATA SHEET SILICON POWER TRANSISTOR 2SD1692 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FEATURES PACKAGE DRAWING (UNIT: mm) • High DC current gain due to Darlington connection • Large current capacity and low VCE(sat) • Large power dissipation TO-126 type power transistor
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2SD1692
O-126
2SB1149
2SB1149
2SD1692
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2sJ133 MOSFET
Abstract: 2SJ133 2SJ133-Z 133Z
Text: データ・シート MOS形電界効果パワー・トランジスタ MOS Field Effect Power Transistors 2SJ133,133-Z Pチャネル・パワー MOSFET スイッチング用 特 徴 外形図（単位：mm） ★ 6.5 ±0.2 ○2SJ133-ZはハイブリッドIC実装に最適なリード加工品です。
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2SJ133
133-Z
2SJ133-ZIC
PW300
Cycle10
O-251MP-3
O-252MP-3Z
D16193JJ3V0DS003
TC-6282A
2sJ133 MOSFET
2SJ133-Z
133Z
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTORS 2SD1616, 2SD1616A NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES PACKAGE DRAWING UNIT: mm • Low VCE(sat): VCE(sat) = 0.15 V TYP. (IC = 1.0 A, IB = 50 mA) • Large PT in small dimension with versatility
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2SD1616,
2SD1616A
2SB1116
2SD1616
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2SD1581
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SD1581 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS The 2SD1581 is a single type super high hFE transistor and low PACKAGE DRAWING UNIT: mm collector saturation voltage and low power loss. This transistor is
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2SD1581
2SD1581
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT POWER TRANSISTOR 2SJ132,132-Z P-CHANNEL POWER MOSFET FOR SWITCHING <R> FEATURES PACKAGE DRAWING UNIT: mm 5.0 ±0.2 Unit VGS = 0 V −30 V VGSS VDS = 0 V m20 V Drain current (DC) ID(DC) TC = 25°C m2.0 A Drain current (pulse) ID(pulse)
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2SJ132
132-Z
2SJ132-Z
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2SB1149
Abstract: 2SD1692
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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2SJ133
Abstract: 2SJ133-Z
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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1116a
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTORS 2SD1616, 2SD1616A NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES PACKAGE DRAWING UNIT: mm • Low VCE(sat): VCE(sat) = 0.15 V TYP. (IC = 1.0 A, IB = 50 mA) • Large PT in small dimension with versatility
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2SD1616,
2SD1616A
2SB1116
2SD1616
1116a
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D1619
Abstract: 2SJ133 2SJ133-Z C11531E
Text: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ133, 2SJ133-Z P-CHANNEL POWER MOS FET FOR SWITCHING FEATURES PACKAGE DRAWING UNIT: mm • Gate drive available at logic level (VGS = –4 V) • High current control available in small dimension due to low RDS(on) (≅ 0.45 Ω)
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2SJ133,
2SJ133-Z
2SJ133-Z
C11531E)
D1619
2SJ133
C11531E
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d2023
Abstract: dram 4mx4 interfacing sram and dram MC516 MC68360
Text: DRAFT COPY Interfacing the QUICC to a MCM516400 4Mx4 10/12 column/row DRAM By Gordon Lawton Motorola, East Kilbride, Scotland One of the most useful functions of the SIM block of the MC68360 is the Memory Controller. This enables the MC68360 to interface gluelessly to
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MCM516400
MC68360
MCM54400A
and10
MCM516400
MCM516400.
MC516400
A0-11
d2023
dram 4mx4
interfacing sram and dram
MC516
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTORS 2SA1376, 1376A PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH VOLTAGE AMPLIFIERS FEATURES PACKAGE DRAWING UNIT: mm • High voltage VCEO: −180 V / −200 V (2SA1376/2SA1376A) • Excellent hFE linearity • High total power dissipation in small dimension:
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2SA1376,
2SA1376/2SA1376A)
2SC3478
2SC3478A
2SA1376/2SA1376A
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2SJ133
Abstract: 2SJ133-Z 2sJ133 MOSFET
Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
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2SJ133
133-Z
2SJ133-ZIC
PW300
O-252MP-3Z
D16193JJ3V0DS003
TC-6282A
D16193JJ3V0DS
2SJ133-Z
2sJ133 MOSFET
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2sJ132 MOSFET
Abstract: 2SJ132 2SJ132-Z 132-Z
Text: DATA SHEET MOS FIELD EFFECT POWER TRANSISTOR 2SJ132,132-Z P-CHANNEL POWER MOSFET FOR SWITCHING PACKAGE DRAWING UNIT: mm FEATURES 6.5 ±0.2 • 2SJ132-Z is a lead process product and is ideal for mounting a hybrid IC. 5.0 ±0.2 −30 V VGSS VDS = 0 V m20
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2SJ132
132-Z
O-251
2sJ132 MOSFET
2SJ132-Z
132-Z
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d2023
Abstract: dram 4mx4 MC68360 motorola 16M CMOS DRAM D2831
Text: Freescale Semiconductor, Inc. Freescale Semiconductor, Inc. DRAFT COPY Interfacing the QUICC to a MCM516400 4Mx4 10/12 column/row DRAM By Gordon Lawton Motorola, East Kilbride, Scotland One of the most useful functions of the SIM block of the MC68360 is the
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MCM516400
MC68360
MCM54400A
and10
MCM516400
MC516400
A0-11
d2023
dram 4mx4
motorola 16M CMOS DRAM
D2831
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mc1498
Abstract: D1619 dali schematic MC1498A DATA MC1489 MC1489A SN55189 SN55189A SN75189 SN75189A
Text: MC1489, MC1489A, SN55189, SN55189A, SN75189, SN75189A QUAD LINE RECEIVERS SLLS095A —D 1619, SEPTEM BER 1 9 7 3 - REVISED MARCH 1993 SN55189, SN55189A . . . J O R W PACKAGE MC1489, MC1489A, SN751S9, SN75189A □, N, OR N S t PACKAGE TOP VIEW Input Resistance. . . 3 k£2 to 7 kQ
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MC1489,
MC1489A,
SN55189,
SN55189A,
SN75189,
SN75189A
SLLS095A
D1619,
RS-232-C
MC1489
mc1498
D1619
dali schematic
MC1498A DATA
MC1489A
SN55189
SN55189A
SN75189
SN75189A
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c4460
Abstract: d1651 d1047 k d1047 B817 C2621 D1650 B1269 c4106 D895
Text: SA\YO ^ Q u i c k S e 1 e c t i o n G u i d S P A CEO I > < V 1 5 1 8 2 K 11 K5 9 K15 K2 1 K3 1 K4 0 3 1 6 78 2 5 4 A 11 C28 C2 9 K5 4 77 39 99 4 2 5 Type T ransistors 3 4 «¡D a rlin g to n 5 8 mA ) 1 2 K4 2 7 K4 4 4 5 K546 K7 7 2 K2 2 7 0 3 K3 0 4
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1503/C
1565/C
1574/C
1590/C
1616/C
1654/C
C3820,
1782/C
B1235/D
C3151
c4460
d1651
d1047
k d1047
B817
C2621
D1650
B1269
c4106
D895
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