box54c
Abstract: BOX34C b0336 BOW84C B0650 2SB1100K 2SB1098L BOW24C 2SB1099 2SB897
Text: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO (V) Ie Max (A) PD Max (W) fT hFE Min Max (Hz) leBO Max (A) t, Max tf Max (s) (s) TOper Max (Oe) Package Style PNP Darlington Transistors, (Co nt' d) 5 10 B0262B B0262B B0682 2SB1098M 2SB1098L
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B0262B
B0682
2SB1098M
2SB1098L
2SB1098K
2SB1227
2SB885
SGS127
box54c
BOX34C
b0336
BOW84C
B0650
2SB1100K
BOW24C
2SB1099
2SB897
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BOX34B
Abstract: bot64a BOX54B sgs-ates transistors bot64 B064S MJ0117 BOW94B BOV64 MJ-01
Text: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO (V) Ie Max (A) PD Max (W) fT hFE Min Max (Hz) leBO Max (A) tr Max tf Max TOper Max (8) (8) (Oe) Package Style PNP Darlington TransisLors, (Cont'd) 2N6041 2SBS72A 2SB939A 2SB951A BOX54B B0266A
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2N6041
2SBS72A
2SB939A
2SB951A
BOX54B
B0266A
B064S
B0700
B0700A
BOX34B
bot64a
sgs-ates transistors
bot64
MJ0117
BOW94B
BOV64
MJ-01
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BDV65
Abstract: bdv65b 8DV65C BOV65 BOV64A bdv65a
Text: BDV65, BDV65A, BDV65B, BDV65C NPN SILICON POWER DARLINGTONS Copyright 1997, Power innovations Limited, UK • Designed or Complementary Use with BDV64, BOV64A, BDV64B and BDV64C • 125 W at 25°C Case Temperature • 12 A Continuous Collector Current •
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BDV65,
BDV65A,
BDV65B,
BDV65C
BDV64,
BOV64A,
BDV64B
BDV64C
OT-93
BOV65
BDV65
bdv65b
8DV65C
BOV64A
bdv65a
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darlington transistor with built-in temperature c
Abstract: BDV64 BDV64A BDV64B BDV65 BDV65A BDV65B TO-247 NPN SILICON POWER TRANSISTORS DARLINGTON
Text: Æ &MOSPEC DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS PNP BDV64 .designed for general-purpose amplifier and low speed switching applications NPN BDV65 FEATURES: BDV64A BDV65A * Collector-Emitter Sustaining VoltageV ceopus, = 60 V Min - BDV64.BDV65
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BDV64
BDV65
BDV64A
BDV65A
BDV64B
BDV65B
BDV65A
darlington transistor with built-in temperature c
BDV65
BDV65B
TO-247 NPN SILICON POWER TRANSISTORS DARLINGTON
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bdv64b transistor
Abstract: ic 7493 BDV64 BDV64B transistors BDV64B BDV65 7Z77491
Text: BDV64; 64A BDV64B; 64C SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in m o n olithic D arlington circu it fo r audio o u tp u t stages and general a m p lifie r and switching applications. N-P-N complements are B D V 65, 65A, 65B and 65C.
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BDV64;
BDV64B;
BDV65,
BDV64
7Z9669S
bdv64b transistor
ic 7493
BDV64B
transistors BDV64B
BDV65
7Z77491
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BDV64C
Abstract: BDV64B B0V64B 8DV64B
Text: BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS Copyright 1997, Power Innovations Limited, UK • • JU NE 1993 - R E V IS E D M A R C H 1997 Designed for Complementary Use with BDV65, BDV65A, BDV65B and BDV65C SOT-93 P A C KA G E TOP VIEW
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BDV64,
BDV64A,
BDV64B,
BDV64C
BDV65,
BDV65A,
BDV65B
BDV65C
OT-93
BDV64
BDV64B
B0V64B
8DV64B
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