Untitled
Abstract: No abstract text available
Text: BPV10NF www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Radiant sensitive area (in mm2): 0.78 • Leads with stand-off • High radiant sensitivity • Daylight blocking filter matched with 870 nm to 950 nm
|
Original
|
PDF
|
BPV10NF
BPV10NF
2002/95/EC
2002/96/EC
2011/65/EU
2002/95/EC.
2011/65/EU.
12-Mar-12
|
BPV10NF
Abstract: 161401
Text: BPV10NF Vishay Semiconductors Silicon PIN Photodiode, RoHS Compliant FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Leads with stand-off • Radiant sensitive area (in mm2): 0.78 • High radiant sensitivity • Daylight blocking filter matched with 870 nm to
|
Original
|
PDF
|
BPV10NF
BPV10NF
2002/95/EC
2002/96/EC
11-Mar-11
161401
|
BPV10NF
Abstract: No abstract text available
Text: TELEFUNKEN Semiconductors BPV 10 NF High Speed Silicon PIN Photodiode Description BPV10NF is a high sensitive and wide bandwidth PIN photodiode in a standard T–1¾ plastic package. The black epoxy is an universal IR filter, spectrally matched to GaAs l=950nm and
|
Original
|
PDF
|
BPV10NF
950nm)
870nm)
78mm2
D-74025
|
BPV10NF
Abstract: 8436 TSSF4500
Text: BPV10NF High Speed Silicon PIN Photodiode Description BPV10NF is a high sensitive and wide bandwidth PIN photodiode in a standard T–1¾ plastic package. The black epoxy is an universal IR filter, spectrally matched to GaAs l=950nm and GaAlAs (l=870nm) IR emitters.
|
Original
|
PDF
|
BPV10NF
BPV10NF
950nm)
870nm)
78mm2
D-74025
15-Jul-96
8436
TSSF4500
|
bpv10nf
Abstract: 8436
Text: BPV10NF VISHAY Vishay Semiconductors High Speed Silicon PIN Photodiode Description BPV10NF is a high sensitive and wide bandwidth PIN photodiode in a standard T-1¾ plastic package. The black epoxy is an universal IR filter, spectrally matched to GaAs λ = 950 nm and GaAlAs
|
Original
|
PDF
|
BPV10NF
BPV10NF
D-74025
25-Mar-04
8436
|
Untitled
Abstract: No abstract text available
Text: BPV10NF www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Radiant sensitive area (in mm2): 0.78 • Leads with stand-off • High radiant sensitivity • Daylight blocking filter matched with 870 nm to 950 nm
|
Original
|
PDF
|
BPV10NF
2002/95/EC
2002/96/EC
BPV10NF
11-Mar-11
|
BPV10NF
Abstract: No abstract text available
Text: BPV10NF Vishay Semiconductors High Speed Silicon PIN Photodiode Description BPV10NF is a high sensitive and wide bandwidth PIN photodiode in a standard T-1¾ plastic package. The black epoxy is an universal IR filter, spectrally matched to GaAs λ = 950 nm and GaAlAs
|
Original
|
PDF
|
BPV10NF
BPV10NF
2002/95/EC
D-74025
08-Mar-05
|
8439
Abstract: BPV10NF
Text: TELEFUNKEN Semiconductors BPV 10 NF High Speed Silicon PIN Photodiode Description BPV10NF is a high sensitive and wide bandwidth PIN photodiode in a standard T–1¾ plastic package. The black epoxy is an universal IR filter, spectrally matched to GaAs l=950nm and
|
Original
|
PDF
|
BPV10NF
950nm)
870nm)
78mm2
D-74025
8439
|
bpv10nf
Abstract: CM294
Text: BPV10NF Vishay Semiconductors High Speed Silicon PIN Photodiode Description BPV10NF is a high sensitive and wide bandwidth PIN photodiode in a standard T-1¾ plastic package. The black epoxy is an universal IR filter, spectrally matched to GaAs λ = 950 nm and GaAlAs
|
Original
|
PDF
|
BPV10NF
BPV10NF
2002/95/EC
08-Apr-05
CM294
|
BPV10NF
Abstract: No abstract text available
Text: BPV10NF Vishay Telefunken High Speed Silicon PIN Photodiode Description 94 8390 BPV10NF is a high sensitive and wide bandwidth PIN photodiode in a standard T–1¾ plastic package. The black epoxy is an universal IR filter, spectrally matched to GaAs l=950nm and GaAlAs (l=870nm) IR emitters. BPV10NF is optimized for serial infrared links
|
Original
|
PDF
|
BPV10NF
BPV10NF
950nm)
870nm)
78mm2
D-74025
20-May-99
|
BPV10NF
Abstract: No abstract text available
Text: BPV10NF Vishay Telefunken High Speed Silicon PIN Photodiode Description 94 8390 BPV10NF is a high sensitive and wide bandwidth PIN photodiode in a standard T–1¾ plastic package. The black epoxy is an universal IR filter, spectrally matched to GaAs l=950nm and GaAlAs (l=870nm) IR emitters. BPV10NF is optimized for serial infrared links
|
Original
|
PDF
|
BPV10NF
BPV10NF
950nm)
870nm)
78mm2
D-74025
20-May-99
|
bpv10nf
Abstract: 8439
Text: BPV10NF VISHAY Vishay Semiconductors High Speed Silicon PIN Photodiode Description BPV10NF is a high sensitive and wide bandwidth PIN photodiode in a standard T-1¾ plastic package. The black epoxy is an universal IR filter, spectrally matched to GaAs λ = 950 nm and GaAlAs
|
Original
|
PDF
|
BPV10NF
BPV10NF
D-74025
20-Apr-04
8439
|
PIN Photodiode
Abstract: 8436 BPV10NF V 8623
Text: BPV10NF Vishay Semiconductors Silicon PIN Photodiode, RoHS Compliant FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Leads with stand-off • Radiant sensitive area (in mm2): 0.78 • High radiant sensitivity • Daylight blocking filter matched with 870 nm to
|
Original
|
PDF
|
BPV10NF
BPV10NF
2002/95/EC
2002/96/EC
18-Jul-08
PIN Photodiode
8436
V 8623
|
Untitled
Abstract: No abstract text available
Text: BPV10NF Vishay Semiconductors High Speed Silicon PIN Photodiode Description BPV10NF is a high sensitive and wide bandwidth PIN photodiode in a standard T-1¾ plastic package. The black epoxy is an universal IR filter, spectrally matched to GaAs λ = 950 nm and GaAlAs (λ = 870 nm) IR
|
Original
|
PDF
|
BPV10NF
BPV10NF
2002/95/EC
2002/96/EC
18-Jul-08
|
|
BPV10NF
Abstract: tshf5
Text: BPV10NF Vishay Semiconductors High Speed Silicon PIN Photodiode Description BPV10NF is a high sensitive and wide bandwidth PIN photodiode in a standard T-1¾ plastic package. The black epoxy is an universal IR filter, spectrally matched to GaAs λ = 950 nm and GaAlAs (λ = 870 nm) IR
|
Original
|
PDF
|
BPV10NF
BPV10NF
08-Apr-05
tshf5
|
Untitled
Abstract: No abstract text available
Text: BPV10NF Vishay Telefunken High Speed Silicon PIN Photodiode Description 94 8390 BPV10NF is a high sensitive and wide bandwidth PIN photodiode in a standard T–1¾ plastic package. The black epoxy is an universal IR filter, spectrally matched to GaAs l=950nm and GaAlAs (l=870nm) IR emitters. BPV10NF is optimized for serial infrared links
|
Original
|
PDF
|
BPV10NF
BPV10NF
950nm)
870nm)
78mm2
D-74025
20-May-99
|
8436
Abstract: BPV10NF 870nm
Text: BPV10NF Vishay Semiconductors High Speed Silicon PIN Photodiode Description 94 8390 BPV10NF is a high sensitive and wide bandwidth PIN photodiode in a standard T–1¾ plastic package. The black epoxy is an universal IR filter, spectrally matched to GaAs l=950nm and GaAlAs (l=870nm) IR emitters. BPV10NF is optimized for serial infrared links
|
Original
|
PDF
|
BPV10NF
BPV10NF
950nm)
870nm)
78mm2
D-74025
20-May-99
8436
870nm
|
Untitled
Abstract: No abstract text available
Text: BPV10NF www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Radiant sensitive area (in mm2): 0.78 • Leads with stand-off • High radiant sensitivity • Daylight blocking filter matched with 870 nm to 950 nm
|
Original
|
PDF
|
BPV10NF
2002/95/EC
2002/96/EC
BPV10NF
2002/95/EC.
2011/65/EU.
JS709A
02-Oct-12
|
BPW22
Abstract: TELEFUNKEN TF 2940 DATA BPW23 infrared emitters and detectors data book temic IRDA TRANSMITTER NSCPC87108 AUTOMATIC ROOM LIGHT CONTROLLER infrared BPV10NF rf 433 mir TFDS6000
Text: T S IrDA-Compatible Data Transmission TELEFUNKEN Semiconductors 04.96 T S Table of Contents Paving the Way to a Wireless Information Environment. 1 IrDA-Compatible Data Transmission. 2
|
Original
|
PDF
|
|
near IR sensors with daylight filter
Abstract: light sensing circuit project BPW34 application note BPW20RF
Text: TEKT5400S www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: side view lens • Dimensions L x W x H in mm : 5 x 2.65 x 5 • High radiant sensitivity • Daylight blocking filter matched with 940 nm
|
Original
|
PDF
|
TEKT5400S
TSKS5400S
2002/95/EC
2002/96/EC
TEKT5400S
2002/95/EC.
2011/65/EU.
JS709A
near IR sensors with daylight filter
light sensing circuit project
BPW34 application note
BPW20RF
|
BPW34 application note
Abstract: No abstract text available
Text: VSMS3700 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 950 nm • High reliability • Angle of half intensity: ϕ = ± 60°
|
Original
|
PDF
|
VSMS3700
VEMT3700
J-STD-020
VSMS3700
AEC-Q101
2002/95/EC
2002/95/EC.
2011/65/EU.
JS709A
BPW34 application note
|
telefunken ha 870
Abstract: No abstract text available
Text: Tem ic BPV10NF S e m iconductors High Speed Silicon PIN Photodiode Description B PV 10N F is a high sensitive and wide bandw idth PIN photodiode in a standard T - l 'i plastic package. The black epoxy is an universal IR filter, spectrally m atched to GaA s X=950nm and G aA lA s ()t=870nm) [R em itters.
|
OCR Scan
|
PDF
|
BPV10NF
BPV10N
950nm)
870nm)
870nm
15-Jul-96
telefunken ha 870
|
Untitled
Abstract: No abstract text available
Text: Tem ic TELEFUNKEN Semiconductors BPV 10 NF High Speed Silicon PIN Photodiode Description BPV10NF is a high sensitive and wide bandwidth PIN photodiode in a standard T -P A plastic package. The black epoxy is an universal IR filter, spectrally matched to GaAs X=950nm and
|
OCR Scan
|
PDF
|
BPV10NF
950nm)
870nm)
78mm2
D-74025
|
SFH2031
Abstract: SFH203 SFH203FA BPV10NF BPW43 KAKY
Text: MHTEPTEKC www.i-t.su info@i-t.su Ten: 495 739-09-95, 644-41-29 $OTOAMOAbi PIN b nnacTMaccoBOM Kopnyce □ 5 MM napaMeTp/Kofl: BPW43 BPV10NF SFH203FA C BeTO H yB C TB . n o B e p x H O C T b 0,25 m m 2 0,78 m m 2 1,0 M M 2 SFH203 1,0 M M 2 y ro n o63opa ±2 5°
|
OCR Scan
|
PDF
|
SFH203FA
BPW43
BPV10NF
o63opa
jihh30m.
SFH203
SFH2031
SFH203
SFH203FA
BPV10NF
KAKY
|