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    LM385BPW-1-2 Texas Instruments Micropower Voltage Reference 8-TSSOP 0 to 70 Visit Texas Instruments Buy
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    Inspired LED 12V-SB-PW-12M

    LED ENG NEU WHT 4200K 12M REEL
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    DigiKey 12V-SB-PW-12M Cut Tape 109,100 1
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    Vishay Vitramon VJ0805A181JXBPW1BC

    CAP CER 180PF 100V C0G/NP0 0805
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    Vishay Vitramon VJ0603A471KXBPW1BC

    CAP CER 470PF 100V C0G/NP0 0603
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    CAP CER 1000PF 100V X7R 0805
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    Vishay Vitramon VJ1206A101KXBPW1BC

    CAP CER 100PF 100V C0G/NP0 1206
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    BPW1 Datasheets (61)

    Part
    ECAD Model
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    BPW12 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BPW12 Telefunken Electronic Optoelectronic Device Data Book 1977 Scan PDF
    BPW13 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BPW13 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BPW13 Philips Components Philips Data Book Scan Scan PDF
    BPW13 Telefunken Electronic Electronic Component Data Book 1976 Scan PDF
    BPW13 Telefunken Electronic Optoelectronic Device Data Book 1977 Scan PDF
    BPW13 Temic Semiconductors Silicon NPN Phototransistor Scan PDF
    BPW13A Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BPW13A Telefunken Electronic Silicon NPN Epitaxial Planar Phototransistors Scan PDF
    BPW13A Temic Semiconductors Silicon NPN Phototransistor Scan PDF
    BPW13B Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BPW13B Telefunken Electronic Silicon NPN Epitaxial Planar Phototransistors Scan PDF
    BPW13B Temic Semiconductors Silicon NPN Phototransistor Scan PDF
    BPW13C Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BPW13C Telefunken Electronic Silicon NPN Epitaxial Planar Phototransistors Scan PDF
    BPW13C Temic Semiconductors Silicon NPN Phototransistor Scan PDF
    BPW14 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BPW14 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BPW14 Philips Components Philips Data Book Scan Scan PDF

    BPW1 Datasheets Context Search

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    PDF

    vt1311

    Abstract: volterra BPW10040
    Text: Fixed Inductors for Surface Mounting 表面贴装固定电感器 BPW10040 Recommended patterns DIMENSIONS／尺寸 推荐焊盘尺寸 Tolerance公差：±0.3 Unit: mm /(单位：毫米) (Unit: mm) /(单位：毫米) FEATURES／特点 •    


    Original     		BPW10040 VT1311 VT1311 100kHz 4420A LCR4284AAgilent100kHz 34420AAgilent3541 volterra BPW10040 PDF

    8239

    Abstract: BPW17 BPW17N CQY37N
    Text: BPW17N Vishay Telefunken Silicon NPN Phototransistor Description BPW17N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with a ± 12° lens. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are easily stackable on PC boards and assembled to arrays of


    Original     		BPW17N BPW17N D-74025 20-May-99 8239 BPW17 CQY37N PDF

    ic 8237

    Abstract: No abstract text available
    Text: BPW16N Vishay Semiconductors Silicon NPN Phototransistor Description BPW16N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center to center spacing of 2.54 mm and a package width of 2.4 mm the devices are easily


    Original     		BPW16N BPW16N CQY36N 2002/95/EC 08-Apr-05 ic 8237 PDF

    BPW17

    Abstract: No abstract text available
    Text: MHTEPTEKC www.i-t.su info@i-t.su Ten: 0O TO TpaH3M CTO pbl Kofl: flrrnHaBoriHbi b TO H Ke MaKC. electronics 495 739-09-95, 644-41-29 BPW17 yron o63opa UCE0 MyBCTBHTenbHOCTb (UCE= 5B , X = 950 h m ) TnnrmH3bi 1 m A @ 1 m B t/cm 2 6ecqB eTH aa H yB C T B H T. X max


    OCR Scan     		BPW17 o63opa BPW17 PDF

    BPW17

    Abstract: CQY37 BPW17N
    Text: BPW17N Vishay Semiconductors Silicon NPN Phototransistor Description BPW17N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with a ± 12 ° lens. With a lead center to center spacing of 2.54 mm and a package width of 2.4 mm the devices are easily


    Original     		BPW17N BPW17N CQY37N D-74025 08-Mar-05 BPW17 CQY37 PDF

    volterra dc converter

    Abstract: Volterra BPW10040 1205AS-1002 bpw100 BPW10
    Text: Fixed Inductors for Surface Mounting 面実装用固定インダクタ BPW10040 Recommended patterns 推奨パターン図 Tolerance：±0.3 Unit: mm FEATURES (Unit: mm) 特長 •      10.0  10.0mm square and 4.0mm Max. height. Magnetically shielded, low DC resistance.


    Original     		BPW10040 VT13xx VT13xx 4420A 4284AAgilent 34420AAgilent volterra dc converter Volterra BPW10040 1205AS-1002 bpw100 BPW10 PDF

    volterra

    Abstract: BPW10040 volterra dc converter
    Text: Fixed Inductors for Surface Mounting 表面贴装固定电感器 BPW10040 Recommended patterns 推荐焊盘尺寸 Tolerance：±0.3 Unit: mm FEATURES (Unit: mm) 特点 • • • • • • 10.0 x 10.0mm square and 4.0mm Max. height. Magnetically shielded, low DC resistance.


    Original     		BPW10040 VT13xx VT13xx 4420A LCR4284AAgilent 34420AAgilent3541 volterra BPW10040 volterra dc converter PDF

    BPW14

    Abstract: No abstract text available
    Text: Temic BPW14N S e m i c o n d u c t o r s Silicon NPN Phototransistor Description B P W 1 4 N is a h ig h s p e e d s ilic o n N P N e p ita x ia l p lan ar p h o to tr a n sisto r in a stan d ard T O - 1 8 h e r m e tic a lly s e a le d m eta l c a s e . Its g la s s le n s , fe a tu r in g a v ie w in g a n g le o f ± 1 2 ° m a k e s it


    OCR Scan     		BPW14N BPW14 PDF

    8239

    Abstract: BPW16N CQY36N
    Text: BPW16N Vishay Telefunken Silicon NPN Phototransistor Description BPW16N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are easily stackable on PC boards and assembled to arrays of


    Original     		BPW16N BPW16N CQY36N D-74025 20-May-99 8239 CQY36N PDF

    Untitled

    Abstract: No abstract text available
    Text: BPW17N Vishay Semiconductors Silicon NPN Phototransistor Description BPW17N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with a ± 12° lens. With a lead center to center spacing of 2.54 mm and a package width of 2.4 mm the devices are easily


    Original     		BPW17N BPW17N CQY37N 08-Apr-05 PDF

    BPW14

    Abstract: BPW14A BPW29 BPW17 BPW29 100 BPW13 BPW16/BPW17 BPW16 BPW13A
    Text: Optoelectronic devices Photo transistors Type Group Fig. Nr. Maximum ratings Characteristics - electrical + optical Aot a W > 'f’ > O at Us = 5 V, R L = 1 0 0 Q ^ CEO at 'am b = + 2 5 °c W V S pectral curve see page 71 mA MS BPW13 A B C 21 21 21 0.375


    OCR Scan     		BPW13 BPW14 BPW16 BPW17 BPW29 BPW14A BPW17 BPW29 100 BPW16/BPW17 BPW16 BPW13A PDF

    volterra dc converter

    Abstract: volterra
    Text: Fixed Inductors for Surface Mounting 面実装用固定インダクタ BPW10040 Recommended patterns 推奨パターン図 Tolerance：±0.3 Unit: mm FEATURES (Unit: mm) 特長 •      10.0  10.0mm 角高さ4.0mm Max. 閉磁路、低直流抵抗


    Original     		BPW10040 VT13xx VT13xx 1205AS-1002 4420A 4284AAgilent 34420AAgilent volterra dc converter volterra PDF

    Untitled

    Abstract: No abstract text available
    Text: Ferrite Inductors BPW1 0 0 4 0 Recommended patterns Tolerance ±0.3 Unit: mm (Unit: mm) FEATURES •                10.0  10.0mm square and 4.0mm Max. height. Magnetically shielded, low DC resistance. Suitable for large current


    Original     		VT13xx VT13xx BPW10040 4420A PDF

    Untitled

    Abstract: No abstract text available
    Text: Temic BPW17N Semiconductors Silicon NPN Phototransistor Description BPW 17N is a silicon NPN epitaxial planar phototransis­ tor in a miniature plastic case with a + 12‘ lens. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are easily stackable


    OCR Scan     		BPW17N I5-Jut-96 15-Jul PDF

    BPW14

    Abstract: 8337 BPW14N BPW14NC BPW14NB
    Text: BPW14N Silicon NPN Phototransistor Description BPW14N is a high speed silicon NPN epitaxial planar phototransistor in a standard TO–18 hermetically sealed metal case. Its glass lens, featuring a viewing angle of ±12° makes it insensible to ambient straylight. A base terminal is available to enable biasing and sensitivity control.


    Original     		BPW14N BPW14N 25the D-74025 15-Jul-96 BPW14 8337 BPW14NC BPW14NB PDF

    Untitled

    Abstract: No abstract text available
    Text: BPW16N Vishay Semiconductors Silicon NPN Phototransistor Description BPW16N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center to center spacing of 2.54 mm and a package width of 2.4 mm the devices are easily


    Original     		BPW16N BPW16N CQY36N 200any 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: BPW16N www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation


    Original     		BPW16N 2002/95/EC 2002/96/EC BPW16N 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: BPW17N Vishay Telefunken Silicon NPN Phototransistor Description BPW17N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with a ± 12° lens. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are easily stackable on PC boards and assembled to arrays of


    Original     		BPW17N BPW17N CQY37N D-74025 20-May-99 PDF

    VOLTERRA

    Abstract: vt1311 VOLTERRA -VSC1294-LF.D.G.B BPW10040 volterra dc converter
    Text: づ け Fixed Inductors for Surface Mounting 面実装用固定インダクタ BPW10040 Recommended patterns DIMENSIONS／外形寸法図 推奨パターン図 Tolerance：±0.3 Unit: mm (Unit: mm) FEATURES／特長 • • • • • • 10.0 x 10.0mm square and 4.0mm Max. height.


    Original     		BPW10040 VT1311 VT1311 4420A 4284AAgilent 34420AAgilent VOLTERRA VOLTERRA -VSC1294-LF.D.G.B BPW10040 volterra dc converter PDF

    Untitled

    Abstract: No abstract text available
    Text: BPW17N www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation


    Original     		BPW17N 2002/95/EC 2002/96/EC BPW17N 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    BPW17N

    Abstract: No abstract text available
    Text: BPW17N VISHAY Vishay Semiconductors Silicon NPN Phototransistor Description BPW17N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with a ± 12 ° lens. With a lead center to center spacing of 2.54 mm and a package width of 2.4 mm the devices are easily


    Original     		BPW17N BPW17N D-74025 26-Mar-04 PDF

    BPW17N

    Abstract: BPW17 CQY37N
    Text: BPW17N Silicon NPN Phototransistor Description BPW17N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with a ± 12° lens. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are easily stackable


    Original     		BPW17N BPW17N CQY37N D-74025 15-Jul-96 BPW17 CQY37N PDF

    CQY36

    Abstract: BPW16N BPW16
    Text: BPW16N Silicon NPN Phototransistor Description BPW16N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are easily stackable


    Original     		BPW16N BPW16N D-74025 15-Jul-96 CQY36 BPW16 PDF

    BPW17N

    Abstract: CQY37N BPW17
    Text: CQY37N GaAs Infrared Emitting Diode in Miniature T–¾ Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics. The diode is case compatible to the BPW17N phototransistor, allowing the user to assemble his own optical


    Original     		CQY37N CQY37N BPW17N D-74025 15-Jul-96 BPW17 PDF