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Vishay Semiconductors BPW17N PHOTOTRANSISTOR 450 TO 1040 NM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BPW17N	Bulk	5,148		1	1 $0.98 10 $0.6 100 $0.98 1000 $0.30488 10000 $0.25332	Buy Now
Vishay Intertechnologies BPW17N Phototransistor Chip Silicon 825nm 2-Pin T-3/4 - Bulk (Alt: 78Y9449)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	BPW17N	Bulk		14 Weeks	1	1 $0.86 10 $0.534 100 $0.374 1000 $0.374 10000 $0.374	Buy Now
	BPW17N	Bulk		10 Weeks, 1 Days	1	1 $0.338 10 $0.338 100 $0.338 1000 $0.338 10000 $0.338	Buy Now
	BPW17N	Bulk		6 Weeks	5,000	1 - 10 - 100 - 1000 - 10000 $0.23125	Buy Now
Mouser Electronics	BPW17N		15,458			1 $0.88 10 $0.534 100 $0.383 1000 $0.292 10000 $0.259	Buy Now
Newark	BPW17N	Bulk	545		1	1 $0.219 10 $0.219 100 $0.219 1000 $0.219 10000 $0.219	Buy Now
	BPW17N	Bulk	186		1	1 $0.093 10 $0.093 100 $0.093 1000 $0.093 10000 $0.093	Buy Now
Future Electronics	BPW17N	Bag		6 Weeks	5,000	1 - 10 - 100 - 1000 - 10000 $0.162	Buy Now
Bristol Electronics	BPW17N		300			1 - 10 - 100 - 1000 - 10000 -	Get Quote

TTI	BPW17N	Bulk	5,000		5,000	1 - 10 - 100 - 1000 - 10000 $0.242	Buy Now
TME	BPW17N				1	1 $0.75 10 $0.497 100 $0.344 1000 $0.259 10000 $0.241	Get Quote
EBV Elektronik	BPW17N			7 Weeks	5,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	BPW17N		1,000		1	1 - 10 - 100 - 1000 $0.27 10000 $0.27	Buy Now
Telefunken Microelectronics Gmbh BPW17N
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	BPW17N		557			1 - 10 - 100 - 1000 - 10000 -	Get Quote
tfk BPW17N ROHS COMPLIANT, SILICON NPN PHOTOTRANSISTOR Photo Transistor, 825nm, 0.05A I(C)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	BPW17N		26,977			1 - 10 - 100 - 1000 - 10000 -	Get Quote

BPW17N Datasheets (5)

Part	Manufacturer	Description	Datasheet Type	PDF
BPW17N	Vishay Intertechnology	Silicon NPN Phototransistor	Original	PDF
BPW17N	Vishay Siliconix	Silicon NPN Phototransistor	Original	PDF
BPW17N	Vishay Telefunken	Phototransistor, 1nA Dark Current, 825nm Wavelength	Original	PDF
BPW17N	Philips Components	Philips Data Book Scan	Scan	PDF
BPW17N	Telefunken Electronic	Photo Detectors / Phototransistors / Photo Pin Diodes	Scan	PDF

BPW17N Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
8239 Abstract: BPW17 BPW17N CQY37N Text: BPW17N Vishay Telefunken Silicon NPN Phototransistor Description BPW17N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with a ± 12° lens. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are easily stackable on PC boards and assembled to arrays of	Original	BPW17N BPW17N D-74025 20-May-99 8239 BPW17 CQY37N	PDF
BPW17 Abstract: CQY37 BPW17N Text: BPW17N Vishay Semiconductors Silicon NPN Phototransistor Description BPW17N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with a ± 12 ° lens. With a lead center to center spacing of 2.54 mm and a package width of 2.4 mm the devices are easily	Original	BPW17N BPW17N CQY37N D-74025 08-Mar-05 BPW17 CQY37	PDF
Untitled Abstract: No abstract text available Text: BPW17N Vishay Semiconductors Silicon NPN Phototransistor Description BPW17N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with a ± 12° lens. With a lead center to center spacing of 2.54 mm and a package width of 2.4 mm the devices are easily	Original	BPW17N BPW17N CQY37N 08-Apr-05	PDF
Untitled Abstract: No abstract text available Text: BPW17N Vishay Telefunken Silicon NPN Phototransistor Description BPW17N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with a ± 12° lens. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are easily stackable on PC boards and assembled to arrays of	Original	BPW17N BPW17N CQY37N D-74025 20-May-99	PDF
Untitled Abstract: No abstract text available Text: BPW17N www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation	Original	BPW17N 2002/95/EC 2002/96/EC BPW17N 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
BPW17N Abstract: No abstract text available Text: BPW17N VISHAY Vishay Semiconductors Silicon NPN Phototransistor Description BPW17N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with a ± 12 ° lens. With a lead center to center spacing of 2.54 mm and a package width of 2.4 mm the devices are easily	Original	BPW17N BPW17N D-74025 26-Mar-04	PDF
BPW17N Abstract: BPW17 CQY37N Text: BPW17N Silicon NPN Phototransistor Description BPW17N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with a ± 12° lens. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are easily stackable	Original	BPW17N BPW17N CQY37N D-74025 15-Jul-96 BPW17 CQY37N	PDF
BPW17N Abstract: CQY37N BPW17 Text: CQY37N GaAs Infrared Emitting Diode in Miniature T–¾ Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics. The diode is case compatible to the BPW17N phototransistor, allowing the user to assemble his own optical	Original	CQY37N CQY37N BPW17N D-74025 15-Jul-96 BPW17	PDF
BPW17N Abstract: CQY37N Text: BPW17N Vishay Semiconductors Silicon NPN Phototransistor Description BPW17N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with a ± 12° lens. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are easily stackable on PC boards and assembled to arrays of	Original	BPW17N BPW17N D-74025 20-May-99 CQY37N	PDF
BPW17N application note Abstract: ic 8243 BPW17N Text: BPW17N Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation	Original	BPW17N 2002/95/EC 2002/96/EC BPW17N 11-Mar-11 BPW17N application note ic 8243	PDF
Untitled Abstract: No abstract text available Text: BPW17N www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation	Original	BPW17N 2002/95/EC 2002/96/EC BPW17N 11-Mar-11	PDF
BPW17 Abstract: BPW17N CQY37N Text: BPW17N Vishay Semiconductors Silicon NPN Phototransistor Description BPW17N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with a ± 12 ° lens. With a lead center to center spacing of 2.54 mm and a package width of 2.4 mm the devices are easily	Original	BPW17N BPW17N 08-Apr-05 BPW17 CQY37N	PDF
npn phototransistor Abstract: BPW17N BPW17 BPW17N application note 8239 Text: BPW17N Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation	Original	BPW17N 2002/95/EC 2002/96/EC BPW17N 18-Jul-08 npn phototransistor BPW17 BPW17N application note 8239	PDF
BPW17 Abstract: ic 8243 BPW17N CQY37N infrared 950nm Text: BPW17N Vishay Telefunken Silicon NPN Phototransistor Description BPW17N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with a ± 12° lens. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are easily stackable on PC boards and assembled to arrays of	Original	BPW17N BPW17N D-74025 20-May-99 BPW17 ic 8243 CQY37N infrared 950nm	PDF

Untitled Abstract: No abstract text available Text: BPW17N www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation	Original	BPW17N 2002/95/EC 2002/96/EC BPW17N 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12	PDF
12109 Abstract: No abstract text available Text: CQY37N Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • Peak wavelength: p = 950 nm • High reliability • Angle of half intensity:  = ± 12° • Low forward voltage	Original	CQY37N BPW17N 2002/95/EC 2002/96/EC CQY37N 950trademarks 2011/65/EU 2002/95/EC. 12109	PDF
Untitled Abstract: No abstract text available Text: CQY37N Vishay Telefunken GaAs Infrared Emitting Diode in Miniature T–¾ Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics.	Original	CQY37N CQY37N BPW17N D-74025 20-May-99	PDF
A 69157 scr Abstract: 65k5 HEDS 5300 HCPL-900J-000E HCPL 0636 DT 8210 IC hcpl788 hcpl 1360 HEDS 8210 83K3 Text: NON-VISIBLE OPTOELECTRONICS Find Datasheets Online DETECTORS • ENCODERS DETECTORS SCHMITT TRIGGER DETECTORS CONT. PLASTIC PACKAGING Price Each Max. Radiant Operating Output Threshold Range Vcc Mfg. Part No. Fig. Circuit (mW/cm2) (V) Stock No. 2 Buffer	Original	90F8548 SDP8600-001 95F5325 SDP8371-001 28H5849 28H5850 OPB933W55Z 08F2750 OPB963T55 08F2755 A 69157 scr 65k5 HEDS 5300 HCPL-900J-000E HCPL 0636 DT 8210 IC hcpl788 hcpl 1360 HEDS 8210 83K3	PDF
packaging Abstract: No abstract text available Text: Packaging and Order Information www.vishay.com Vishay Semiconductors Packaging and Order Information PACKAGING SURVEY RECOMMENDED METHOD OF STORAGE Dry box storage is recommended as soon as the dry bag has been opened to prevent moisture absorption. TABLE 1 - PACKAGING OPTIONS OF	Original	TEKS5400S TEKT5400S TSKS5400S BP104 BPW34 BP104S BPW34S BP104S 02-Mar-15 packaging	PDF
schematic diagram atx Power supply 500w Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455	Original	P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS	PDF
mdd 2605 Abstract: HCPL 1458 8 pin opto KS0108 128X64 graphical LCD mdd 2601 transistor chn 952 hitachi INVC 618 Data Vision P135 H4 led smd headlight bulb transistor CHN 64 946 transistor chn 943 Text: 755 Technical portal and online community for Design Engineers - www.element-14.com Optoelectronics, Solid State Illumination & Displays Page Alphanumeric LCD Modules . . . . . . . . . . . . . . . . . 903 Alphanumeric LED Displays . . . . . . . . . . . . . . . . . 900	Original	element-14 element14 mdd 2605 HCPL 1458 8 pin opto KS0108 128X64 graphical LCD mdd 2601 transistor chn 952 hitachi INVC 618 Data Vision P135 H4 led smd headlight bulb transistor CHN 64 946 transistor chn 943	PDF
Untitled Abstract: No abstract text available Text: Temic BPW17N Semiconductors Silicon NPN Phototransistor Description BPW 17N is a silicon NPN epitaxial planar phototransis tor in a miniature plastic case with a + 12‘ lens. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are easily stackable	OCR Scan	BPW17N I5-Jut-96 15-Jul	PDF
BPW85C Abstract: No abstract text available Text: Tem ic S e m i c o n d u c t o r s Detectors Photo Transistors .fe-'. . . Photo - Sensitive Package . •: . Cbaraaeristiès jfca^MA V E e/fflW /Ö B ^ C V C Ç -5V , TVpe X => 950 um I r —S mA., X » 950w n) Photo Transistors in Clear Plastic Package	OCR Scan	BPW16N BPW17N BPW85A BPW85B BPW85C BPW96A BPW96B BPW96C BPV11 TEMT2100	PDF
c1g smd Abstract: bpv10nf TEMD2100 Text: Tem ic S e m i c o n d u c t o r s Selector Guide Infrared Emitting Diodes Characteristics Package Type +/-<p 1 ¡e /m W /sr @ Ip /m A { V p /V @ Ip /m A tr , tf / ns Standard IR Emitters GaAs 950 nm in Plastic Package CQY36N ais=— = r d ] -	OCR Scan	CQY36N CQY37N TSUS4300 TSUS4400 CQX48A CQX48B TSSS2600 TSUS5200 TSUS5201 TSUS5202 c1g smd bpv10nf TEMD2100	PDF

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BPW17N Price and Stock

Vishay Semiconductors BPW17N

Vishay Intertechnologies BPW17N

Telefunken Microelectronics Gmbh BPW17N

tfk BPW17N

BPW17N Datasheets (5)

BPW17N Datasheets Context Search

8239

BPW17

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BPW17N

BPW17N

BPW17N

BPW17N

BPW17N application note

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BPW17

npn phototransistor

BPW17

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12109

Untitled

A 69157 scr

packaging

schematic diagram atx Power supply 500w

mdd 2605

Untitled

BPW85C

c1g smd