BPW85B Search Results
BPW85B Price and Stock
Vishay Intertechnologies BPW85BPHOTO TRANS. 3MM 25DEG-e4 - Bulk (Alt: 32C9162) |
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BPW85B | Bulk | 20 Weeks, 1 Days | 1 |
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BPW85B | 2,978 |
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BPW85B | Bulk | 190 | 1 |
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BPW85B | 741 | 1 |
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BPW85B | 66,000 |
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BPW85B | 11 Weeks | 5,000 |
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Vishay Intertechnologies BPW85B-MS12ZPhototransistors PHOTO TRANS. 3MM 25DEG-e2 |
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BPW85B-MS12Z |
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BPW85B-MS12Z | 11 Weeks | 2,000 |
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Others BPW85BMS12ZINSTOCK |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BPW85BMS12Z | 1,817 |
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BPW85B Datasheets (4)
Part |
ECAD Model |
Manufacturer |
Description |
Curated |
Datasheet Type |
PDF |
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BPW85B | Temic Semiconductors | Silicon NPN Phototransistor | Original | |||
BPW85B | Vishay Intertechnology | Silicon NPN Phototransistor | Original | |||
BPW85B | Vishay Telefunken | Phototransistor, 1nA Dark Current, 850nm Wavelength | Original | |||
BPW85B | Telefunken Electronic | Photo Detectors / Phototransistors / Photo Pin Diodes | Scan |
BPW85B Datasheets Context Search
Catalog Datasheet |
Type |
Document Tags |
PDF |
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Contextual Info: BPW85A, BPW85B, BPW85C www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : Ø 3 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation |
Original |
BPW85A, BPW85B, BPW85C 2002/95/EC 2002/96/EC BPW85 11-Mar-11 | |
BPW85
Abstract: BPW85A BPW85B BPW85C Phototransistor bpw 80
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BPW85A, BPW85B, BPW85C 2002/95/EC 2002/96/EC BPW85 11-Mar-11 BPW85A BPW85B BPW85C Phototransistor bpw 80 | |
Contextual Info: BPW85, BPW85A, BPW85B, BPW85C www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : Ø 3 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation |
Original |
BPW85, BPW85A, BPW85B, BPW85C BPW85 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
Contextual Info: BPW85A, BPW85B, BPW85C www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : Ø 3 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation |
Original |
BPW85A, BPW85B, BPW85C 2002/95/EC 2002/96/EC BPW85 2002/95/EC. 2011/65/EU. JS709A | |
bpw85cContextual Info: BPW85A, BPW85B, BPW85C www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : Ø 3 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation |
Original |
BPW85A, BPW85B, BPW85C 2002/95/EC 2002/96/EC BPW85 2011/65/EU 2002/95/EC. 2011/65/EU. bpw85c | |
Contextual Info: BPW85, BPW85A, BPW85B, BPW85C www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : Ø 3 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation |
Original |
BPW85, BPW85A, BPW85B, BPW85C BPW85 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
BPW85C
Abstract: 416 npn phototransistor 8277 bpw 104 BPW85 BPW85A BPW85B Silicon NPN Phototransistor
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BPW85A, BPW85B, BPW85C 2002/95/EC 2002/96/EC BPW85 18-Jul-08 BPW85C 416 npn phototransistor 8277 bpw 104 BPW85A BPW85B Silicon NPN Phototransistor | |
BPW85CContextual Info: Tem ic S e m i c o n d u c t o r s Detectors Photo Transistors .fe-'. . . Photo - Sensitive Package . •: . Cbaraaeristiès jfca^MA V E e/fflW /Ö B ^ C V C Ç -5V , TVpe X => 950 um I r —S mA., X » 950w n) Photo Transistors in Clear Plastic Package |
OCR Scan |
BPW16N BPW17N BPW85A BPW85B BPW85C BPW96A BPW96B BPW96C BPV11 TEMT2100 | |
TSSP4038Contextual Info: V i s h ay I nte r tec h nolog y, I nc . OPTOELECTRONICS Optoelectronics – Products for Industrial Applications Guide to Industrial Applications TABLE OF CONTENTS Introduction. 2 |
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VMN-MS6520-1311 TSSP4038 | |
bpw 104
Abstract: bpw 50 BPW85 BPW85A BPW85B BPW85C
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BPW85 BPW85 2002/95/EC 2002/96/EC 08-Apr-05 bpw 104 bpw 50 BPW85A BPW85B BPW85C | |
BPW85
Abstract: BPW85A BPW85B BPW85C bpw 104
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BPW85 BPW85 D-74025 16-Nov-99 BPW85A BPW85B BPW85C bpw 104 | |
mdd 2605
Abstract: HCPL 1458 8 pin opto KS0108 128X64 graphical LCD mdd 2601 transistor chn 952 hitachi INVC 618 Data Vision P135 H4 led smd headlight bulb transistor CHN 64 946 transistor chn 943
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element-14 element14 mdd 2605 HCPL 1458 8 pin opto KS0108 128X64 graphical LCD mdd 2601 transistor chn 952 hitachi INVC 618 Data Vision P135 H4 led smd headlight bulb transistor CHN 64 946 transistor chn 943 | |
c1g smd
Abstract: bpv10nf TEMD2100
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OCR Scan |
CQY36N CQY37N TSUS4300 TSUS4400 CQX48A CQX48B TSSS2600 TSUS5200 TSUS5201 TSUS5202 c1g smd bpv10nf TEMD2100 | |
bpw 104Contextual Info: BPW85 Vishay Telefunken Silicon NPN Phototransistor Description BPW85 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T–1 ø 3 mm plastic package. Due to its waterclear epoxy the device is sensitive to visible and near infrared radiation. |
Original |
BPW85 BPW85 D-74025 20-May-99 bpw 104 | |
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BPW85
Abstract: BPW85A BPW85B BPW85C infrared 950nm
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BPW85 D-74025 BPW85A BPW85B BPW85C infrared 950nm | |
Contextual Info: BPW85 w m m f _ ▼ Vishay Telefunken Silicon NPN Phototransistor Description BPW85 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1 0 3 mm plastic package. Due to its waterclear epoxy the |
OCR Scan |
BPW85 BPW85 20-May-99 | |
Leader 8020 schematics Oscilloscope
Abstract: smd diode schottky code marking GW sn 16848 APPLICATION NOTE BpW77 IEC-60050 BPw104 PHOTO TRANSISTOR BPW77 BPW34 PHOTODIODE THEORY Marking Code SMD databook 2010 bpw104s
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vse-db0103-0810 Leader 8020 schematics Oscilloscope smd diode schottky code marking GW sn 16848 APPLICATION NOTE BpW77 IEC-60050 BPw104 PHOTO TRANSISTOR BPW77 BPW34 PHOTODIODE THEORY Marking Code SMD databook 2010 bpw104s | |
Contextual Info: BPW85 Vishay Telefunken Silicon NPN Phototransistor Description BPW85 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T–1 ø 3 mm plastic package. Due to its waterclear epoxy the device is sensitive to visible and near infrared radiation. |
Original |
BPW85 BPW85 D-74025 16-Nov-99 | |
8239
Abstract: Vishay Telefunken Phototransistor BPW85 BPW85A BPW85B BPW85C
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Original |
BPW85 BPW85 D-74025 16-Nov-99 8239 Vishay Telefunken Phototransistor BPW85A BPW85B BPW85C | |
BPW85
Abstract: BPW85A BPW85B BPW85C
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BPW85 BPW85 D-74025 16-Nov-99 BPW85A BPW85B BPW85C | |
sensor BPW34 application note
Abstract: touch sensitive siren using transistor tsop sensor Infrared sensor TSOP 1738 vo2223 vo3120 infrared signal transmission distance sensor BPW34 application note APPLICATION NOTE BpW34 BP104 application note
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VMN-MS6520-1012 sensor BPW34 application note touch sensitive siren using transistor tsop sensor Infrared sensor TSOP 1738 vo2223 vo3120 infrared signal transmission distance sensor BPW34 application note APPLICATION NOTE BpW34 BP104 application note | |
005MW
Abstract: BPW85
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Original |
BPW85 BPW85 D-74025 29-Mar-04 005MW | |
Contextual Info: BPW85 Vishay Semiconductors Silicon NPN Phototransistor Description BPW85 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1 ∅ 3 mm plastic package. Due to its waterclear epoxy the device is sensitive to visible and near |
Original |
BPW85 BPW85 2002/95/EC 2002/96/EC D-74025 08-Mar-05 | |
Vishay TYPE 40D
Abstract: Vishay 40d AC 1506 panasonic inverter dv 707
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Original |
VMN-MS6520-1506 Vishay TYPE 40D Vishay 40d AC 1506 panasonic inverter dv 707 |