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Texas Instruments BQ4025YMA-120 NON-VOLATILE SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 40; Package Code: DIP; Package Shape: RECTANGULAR; JESD-30 Code: R-PDIP-T40;
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BQ4025Y Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
BQ4025Y		Texas Instruments	256K x 16 Nonvolatile SRAM		Original	PDF
BQ4025Y-120		Benchmarq	nvSRAM		Original	PDF
BQ4025Y-85		Benchmarq	nvSRAM		Original	PDF
bq4025YMA-120		Texas Instruments	256K x 16 Nonvolatile SRAM		Scan	PDF

BQ4025Y Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
bq4025 Abstract: bq4025Y Text: bq4025/bq4025Y 256Kx16 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4025 is a nonvolatile 4,194,304-bit static RAM organized as 262,144 words by 16 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility coupled with the unlimited	Original	bq4025/bq4025Y 256Kx16 bq4025 304-bit 40-pin bq4025Y	PDF
bq4025 Abstract: bq4025Y Text: bq4025/bq4025Y 256Kx16 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4025 is a nonvolatile 4,194,304-bit static RAM organized as 262,144 words by 16 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility coupled with the unlimited	Original	bq4025/bq4025Y 256Kx16 bq4025 304-bit 40-pin bq4025Y	PDF
BQ4025 Abstract: bq4025Y Text: h bq4025/bq4025Y BENCHMARQ 256Kx16 Nonvolatile SRAM Features General Description >- Data retention in the absence of power The CMOS bq4025 is a nonvolatile 4,194,304-bit static RAM organized as 262,144 words by 16 bits. The in te g ra l co n tro l c irc u itry an d	OCR Scan	bq4025/bq4025Y 256Kx16 bq4025 304-bit 40-pin bq4025 bq4025Y	PDF
BQ4025 Abstract: bq4025Y Text: bq4025/bq4025Y BENCHMARQ 256KX16 Nonvolatile SRAM Features General Description > Data retention in the absence of power The CMOS bq4025 is a nonvolatile 4,194,304-bit static RAM organized as 262,144 w ords by 16 b its . The integral control circuitry and lithium	OCR Scan	bq4025/bq4025Y 256KX16 bq4025 304-bit D0037CH bq4025Y	PDF
FFD 455 Abstract: BQ4025 bq4025Y Text: bq4025/bq4025Y BENCHMARQ 256KX16 Nonvolatile SRAM Features General Description >• D ata retention in the absence of power The CMOS bq4025 is a nonvolatile 4,194,304-bit static RAM organized as 262,144 words by 16 bits. The in te g r a l c o n tro l c irc u itry a n d	OCR Scan	bq4025/bq4025Y 256KX16 bq4025 304-bit FFD 455 bq4025Y	PDF
BQ4025 Abstract: bq4025Y Text: bq4025/bq4025Y BENCHM ARQ 256Kx16 Nonvolatile SRAM Features General Description ► D ata retention in th e absence of power The CMOS bq4025 is a nonvolatile 4,194,304-bit static RAM organized as 262,144 w ords by 16 bits. The in teg ral control circuitry an d lith	OCR Scan	bq4025/bq4025Y 256Kx16 bq4025 304-bit 128Kx bq4025Y	PDF
BQ4025 Abstract: bq4025Y Text: BENCHMARK MICROELEC 3bE D jcjl BENCHMARQ • 137flfln 00QD277 0 BIBEN bC\|4025/bq4025Y Preliminary 256Kx16 Nonvolatile SRAM T ^ L -2 ^ 1 7 Features General Description > Data retention in the absence of power The CMOS bq4025 is a nonvolatile 4,194,304-bit static RAM organized	OCR Scan	137flfln 00QD277 4025/bq4025Y 256Kx16 bq4025 304-bit 40-pin bq4025/bq4025Y bq4025 bq4025Y	PDF
bq4025 Abstract: bq4025Y 137001 Text: bq4025/bq4025Y t j BENCHMARQ 256Kx16 Nonvolatile SRAM Features General Description >• D ata retention in th e absence of power T he CMOS bq4025 is a nonvolatile 4,194,304-bit static RAM organized as 2 6 2 ,1 4 4 w o rd s b y 16 b its . T h e integral control circuitry and lithium	OCR Scan	bq4025/bq4025Y 256Kx16 40-pin bq4025 304-bit i37aan DG037CH bq4025Y 137001	PDF
Q4025 Abstract: BQ4025 bq4025Y Text: bq4025/bq4025Y BENCHMARQ 256Kx16 Nonvolatile SRAM Features General Description >• D ata retention in the absence of power The CMOS bq4025 is a nonvolatile 4,194,304-bit static RAM organized as 262,144 w ords by 16 b its. The integral control circuitry and lithium	OCR Scan	40-pin bq4025/bq4025Y 256Kx16 bq4025 304-bit q4025 bq4025Y	PDF
BQ4025 Abstract: bq4025Y Text: bq4025/bq4025Y Preliminary 256Kx16 Nonvolatile SRAM Features General Description ► D ata retention in the absence of power The CMOS bq4025 is a nonvolatile 4,194,304-bit static RAM organized as 262,144 words by 16 bits. The in t e g r a l c o n tro l c ir c u itr y a n d	OCR Scan	bq4025/bq4025Y q4025 bq4025 256Kx16 40-pin bq4025Y	PDF
BQ4025 Abstract: bq4025Y Text: bq4025/bq4025Y b BENCHMARQ 256Kx16 Nonvolatile SRAM Features General Description ► Data retention in the absence of power The CMOS bq4025 is a nonvolatile 4,194,304-bit static RAM organized as 262,144 w ords by 16 b its . The integral control circuitry and lithium	OCR Scan	bq4025/bq4025Y 256Kx16 bq4025 304-bit bq4025Y	PDF
BQ4025 Abstract: bq4025Y Text: dcnci iwiARQ Nonvolatile Static RAM Family Summary Data Sheet Family Features General Description a -10% supply tolerance. No suffix denotes a -5% supply tolerance. >• D ata retention in the absence of power The CMOS nonvolatile static RAM NVSRAM fam ily is available in a	OCR Scan		PDF
BQ4025 Abstract: bq4025Y Text: g g ilQ jiy y ^ Q Preliminary bC\|4025/bC\|4025Y 256Kx16 Nonvolatile SRAM Features > Data retention in the absence of power > Automatic write-protection during power-up/power-down cycles > Industry-standard 40-pin 256K x 16 pinout >• Conventional SRAM operation;	OCR Scan	4025/bC 4025Y 256Kx16 40-pin BQ4025 bq4025Y	PDF