BR 101 Transistor
Abstract: AV733
Text: @vic AV733 TO-92 Plastic-Encapsulate Transistors AV733 TRANSISTOR（ PNP ） FEATURES Power dissipation PCM : 0.25 W（Tamb=25℃） Collector current ICM : -0.1 A Collector-base voltage V BR CBO : -60 V Operating and storage junction temperature range TJ，Tstg: -55℃ to +150℃
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AV733
AV733
O--92
BR 101 Transistor
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AV8050
Abstract: 1.5A NPN power transistor TO-92
Text: @vic AV8050 TO-92 Plastic-Encapsulate Transistors AV8050 TRANSISTOR（ NPN ） FEATURES Power dissipation PCM : 1 W（Tamb=25℃） Collector current ICM : 1.5 A Collector-base voltage V BR CBO : 40 V Operating and storage junction temperature range TJ，Tstg: -55℃ to +150℃
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AV8050
AV8050
O--92
1.5A NPN power transistor TO-92
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102 TRANSISTOR
Abstract: ft 103 AV8550
Text: @vic AV8550 TO-92 Plastic-Encapsulate Transistors AV8550 TRANSISTOR（ PNP ） FEATURES Power dissipation PCM : 1 W（Tamb=25℃） Collector current ICM : -1.5 A Collector-base voltage V BR CBO : -40 V Operating and storage junction temperature range TJ，Tstg: -55℃ to +150℃
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AV8550
AV8550
O--92
102 TRANSISTOR
ft 103
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AV945
Abstract: 102 TRANSISTOR 250 f 101 datasheet mv 103 TRANSISTOR BL 100
Text: @vic AV945 TO-92 Plastic-Encapsulate Transistors AV945 TRANSISTOR（ NPN ） FEATURES Power dissipation PCM : 0.4 W（Tamb=25℃） Collector current ICM : 0.15 A Collector-base voltage V BR CBO : 60 V Operating and storage junction temperature range TJ，Tstg: -55℃ to +150℃
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AV945
AV945
O--92
102 TRANSISTOR
250 f 101
datasheet mv 103
TRANSISTOR BL 100
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ft 103
Abstract: AV882 103 IC
Text: @vic AV882 TO-126 Plastic-Encapsulate Transistors AV882 TRANSISTOR（ NPN ） FEATURES Power dissipation PCM : 1.25 W（Tamb=25℃） Collector current ICM : 3 A Collector-base voltage V BR CBO : 40 V Operating and storage junction temperature range TJ，Tstg: -55℃ to +150℃
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AV882
O-126
AV882
O-126
ft 103
103 IC
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AV772
Abstract: ft 103 Avic Electronics
Text: @vic AV772 TO-126 Plastic-Encapsulate Transistors AV772 TRANSISTOR（ PNP ） FEATURES Power dissipation PCM : 1.25 W（Tamb=25℃） Collector current ICM : -3 A Collector-base voltage V BR CBO : - 40 V Operating and storage junction temperature range TJ，Tstg: -55℃ to +150℃
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AV772
O-126
AV772
O-126
-100A
ft 103
Avic Electronics
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TRANSISTOR ss101
Abstract: SS101 TO92 SS101 BR 101 Transistor Q62702-S493 Q62702-S636 Q62702-S484 E6288 transistor bss
Text: SIPMOS Small-Signal Transistor BSS 101 ● VDS 240 V ● ID 0.13 A ● RDS on 16 Ω ● VGS(th) 0.8 … 2.0 V ● N channel ● Enhancement mode ● Logic level 2 3 1 1 Type Ordering Code Tape and Reel Information Pin Configuration Marking BSS 101 Q62702-S484 bulk
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Q62702-S484
Q62702-S493
E6288:
SS101
Q62702-S636
E6325:
TRANSISTOR ss101
SS101 TO92
SS101
BR 101 Transistor
E6288
transistor bss
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KTA1571S
Abstract: ib135
Text: SEMICONDUCTOR KTA1571S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR FEATURE Low Collector-Emitter Saturation Voltage VCE sat . 2 UNIT Collector-Base Voltage VCBO -120 V Collector-Emitter Voltage VCEO -100 V Emitter-Base Voltage VEBO -5 V DC IC -1 Pulse *
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KTA1571S
100mS
KTA1571S
ib135
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KTA1572
Abstract: No abstract text available
Text: SEMICONDUCTOR KTA1572 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR FEATURE Low Collector-Emitter Saturation Voltage VCE sat . High Collector Current Capability : IC and ICP. B D A Higher Efficiency Leading to Less Heat Generation. MAXIMUM RATING (Ta=25 SYMBOL
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KTA1572
100mS*
KTA1572
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d965 TRANSISTOR
Abstract: 2SD965
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • x x NPN Silicon Plastic-Encapsulate Transistor Capable of 0.75Watts of Power Dissipation.
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2SD965
75Watts
-55OC
150OC
10uAdc,
30Vdc,
d965 TRANSISTOR
2SD965
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTA1572 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR FEATURE Low Collector-Emitter Saturation Voltage VCE sat . High Collector Current Capability : IC and ICP. B D A Higher Efficiency Leading to Less Heat Generation. MAXIMUM RATING (Ta=25 SYMBOL
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KTA1572
100mS*
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC3572 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR FEATURE Low Collector-Emitter Saturation Voltage VCE sat . High Collector Current Capability : IC and ICP. B D A Higher Efficiency Leading to Less Heat Generation. MAXIMUM RATING (Ta=25 SYMBOL
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KTC3572
100mS
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KTC3571S
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC3571S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR FEATURE ・Low Collector-Emitter Saturation Voltage VCE sat . ・Higher Efficiency Leading to Less Heat Generation. 120 V Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage VEBO 5
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KTC3571S
100mS
KTC3571S
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KTC3572
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC3572 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR FEATURE Low Collector-Emitter Saturation Voltage VCE sat . High Collector Current Capability : IC and ICP. B D A Higher Efficiency Leading to Less Heat Generation. MAXIMUM RATING (Ta=25 SYMBOL
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KTC3572
100mS
KTC3572
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BSD235C
Abstract: L6327 BSD235 F-053
Text: BSD235C OptiMOS 2 + OptiMOS™-P 2 Small Signal Transistor Product Summary Features • Complementary P + N channel P N -20 20 V V GS=±4.5 V 1200 350 mΩ V GS=±2.5 V 2100 600 -0.53 0.95 V DS · Enhancement mode R DS on ,max · Super Logic level (2.5V rated)
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BSD235C
PG-SOT-363
L6327:
BSD235C
L6327
BSD235
F-053
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Untitled
Abstract: No abstract text available
Text: BSD235C OptiMOS 2 + OptiMOS™-P 2 Small Signal Transistor Product Summary Features P N -20 20 V V GS=±4.5 V 2100 600 mΩ V GS=±2.5 V 1200 350 -0.53 0.95 • Complementary P + N channel V DS · Enhancement mode R DS on ,max · Super Logic level (2.5V rated)
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BSD235C
PG-SOT363
L6327:
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MOSFET 11N80c3
Abstract: 11N80C3 SPA11N80C3 11N80 11n80c MOSFET 11N80c3 Data sheet JESD22
Text: SPA11N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.45 Ω 64 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications
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SPA11N80C3
PG-TO220FP
11N80C3
MOSFET 11N80c3
11N80C3
SPA11N80C3
11N80
11n80c
MOSFET 11N80c3 Data sheet
JESD22
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04N80C3
Abstract: 04N80C3* TO220 JESD22 PG-TO220-3 SPA04N80C3
Text: SPA04N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 1.3 Ω Q g,typ 23 nC • High peak current capability • Qualified according to JEDEC1) for target applications
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SPA04N80C3
PG-TO220-3
04N80C3
04N80C3
04N80C3* TO220
JESD22
PG-TO220-3
SPA04N80C3
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06N80
Abstract: No abstract text available
Text: SPA06N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.9 Ω Q g,typ 31 nC • High peak current capability • Qualified according to JEDEC1) for target applications
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SPA06N80C3
PG-TO220-3
06N80C3
06N80
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MOSFET 11N80c3
Abstract: 11N80
Text: SPA11N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.45 Ω 64 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications
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SPA11N80C3
PG-TO220-3
11N80C3
MOSFET 11N80c3
11N80
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Untitled
Abstract: No abstract text available
Text: SPA08N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.65 Ω 45 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications
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SPA08N80C3
PG-TO220FP
08N80C3
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08N80C3
Abstract: 08n80c 08N80 equivalent 08N80C3 SPA08N80C3 JESD22 PG-TO220-3 Page-10 C40W
Text: SPA08N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.65 Ω 45 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications
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SPA08N80C3
PG-TO220FP
08N80C3
08N80C3
08n80c
08N80
equivalent 08N80C3
SPA08N80C3
JESD22
PG-TO220-3
Page-10
C40W
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SPA04N80C3
Abstract: No abstract text available
Text: SPA04N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 1.3 Ω Q g,typ 23 nC • High peak current capability • Qualified according to JEDEC1) for target applications
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SPA04N80C3
PG-TO220-3
04N80C3
SPA04N80C3
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08N80C3
Abstract: equivalent 08N80C3 SPA08N80C3 SPA08N80C3 EQUIVALENT JESD22 d51a C40W
Text: SPA08N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.65 Ω 45 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications
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SPA08N80C3
PG-TO220FP
08N80C3
08N80C3
equivalent 08N80C3
SPA08N80C3
SPA08N80C3 EQUIVALENT
JESD22
d51a
C40W
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