xaar
Abstract: No abstract text available
Text: SK150GD066T =' S BR TIA -%2&'' ,.8& */'& '5& /E/&1 Absolute Maximum Ratings Symbol Conditions IGBT PI:9 =U S BR TI <I =U S @YR TI <IZ; SEMITOP 4 IGBT Module .5'( WXX P @R@ J =' S YX TI @B@ J CXX J [ BX P =U S @BR TI W _' =' S BR TI @`a J =' S YX TI @RB J BXX
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SK150GD066T
b9-00&
xaar
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DIAC
Abstract: diac 5v diac 5v vbo datasheet DIAC br 100 diac DIAC 100/03 DIAC thyristor DIAC BR 100 diac vbo 10V semikron thyristor
Text: BR 100/03 LLD . BR 100/04 LLD Surface mount bidirectional Silicon-Trigger-Diodes DIAC Bidirektionale Silizium-Trigger-Dioden für die Oberflächenmontage (DIAC) Breakover voltage Durchbruchsspannung 28 . 45 V Plastic case MiniMELF Kunststoffgehäuse MiniMELF
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OD-80
DO-213AA
UL94V-0
DIAC
diac 5v
diac 5v vbo
datasheet DIAC
br 100 diac
DIAC 100/03
DIAC thyristor
DIAC BR 100
diac vbo 10V
semikron thyristor
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DIAC
Abstract: datasheet DIAC DIAC EQUIVALENT circuit diac 5v vbo DIAC EQUIVALENT diac terminals diac 5v vbo-35 bidirectional diode thyristor diac DIAC DATASHEET
Text: BR 100/03 LLD . BR 100/04 LLD Surface mount bidirectional Silicon-Trigger-Diodes DIAC Bidirektionale Silizium-Trigger-Dioden für die Oberflächenmontage (DIAC) Breakover voltage Durchbruchsspannung 28 . 45 V Plastic case MiniMELF Kunststoffgehäuse MiniMELF
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OD-80
DO-213AA
UL94V-0
DIAC
datasheet DIAC
DIAC EQUIVALENT circuit
diac 5v vbo
DIAC EQUIVALENT
diac terminals
diac 5v
vbo-35
bidirectional diode thyristor diac
DIAC DATASHEET
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1N6102A
Abstract: 1N6103A 1N6104A 1N6105A 1N6106A 1N6107A 1N6108A 1N6109A 1N6137A 1N6121A
Text: 1N6102A thru 1N6137A SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 287, REV - TRANSIENT VOLTAGE SUPPRESSER DIODES AXIAL LEAD and MELF TRANSIENT VOLTAGE SUPPRESSORS, 500W SERIES SERIES TYPE BREAKDOWN VOLTAGE I(BR) TEST CURRENT I(BR) WORKING PEAK REVERSE
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1N6102A
1N6137A
1N6103A
1N6104A
1N6105A
1N6106A
1N6107A
1N6108A
1N6109A
1N6137A
1N6121A
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DIAC
Abstract: datasheet DIAC diac vbo 10V diac 5v vbo bidirectional diode thyristor diac br diac DO41 diac 5v DO-41 DIAC EQUIVALENT circuit
Text: BR 100/03 DO-41 . BR 100/04 DO-41 Bidirectional Si-Trigger-Diodes DIAC Bidirektionale Si-Trigger-Dioden (DIAC) Breakdown voltage Durchbruchsspannung 28 . 45 V Peak pulse current – Max. Triggerimpuls ±2A Plastic case Kunststoffgehäuse DO-41 DO-204AL
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DO-41
DO-204AL
UL94V-0
DIAC
datasheet DIAC
diac vbo 10V
diac 5v vbo
bidirectional diode thyristor diac
br diac
DO41
diac 5v
DO-41
DIAC EQUIVALENT circuit
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diac
Abstract: of DIAC datasheet DIAC diac thyristor DIAC BR 100 diac 5v semikron thyristor DO-204AL br 100 diac DO41
Text: BR 100/03 DO-41 . BR 100/04 DO-41 Bidirectional Si-Trigger-Diodes DIAC Bidirektionale Si-Trigger-Dioden (DIAC) Breakdown voltage Durchbruchsspannung 28 . 45 V Peak pulse current – Max. Triggerimpuls ±2A Plastic case Kunststoffgehäuse DO-41 DO-204AL
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DO-41
DO-204AL
UL94V-0
diac
of DIAC
datasheet DIAC
diac thyristor
DIAC BR 100
diac 5v
semikron thyristor
DO-204AL
br 100 diac
DO41
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Bendix Transistors
Abstract: 2N1149 RCA 2n1184a 2N1152 2N1151 2N1150 RCA 2N1174 transitron Emihus 2N1193
Text: LOW-POWER SILICON NPN Item Number Part Number hFE V V(BR)CEO - V(BR)CEO Manufacturer TASSOl Ic Max (A) fT (Hz) Cobo Max (F) ICBO Max Y(BR)CBO Po Max Derate at Toper (A) (V) (W) (WrC) eC) Max Package Style >= 400 V, (Cont'd) See Index 1 800 50M 25 14p lOu
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ST3042
ST3043
3N120
3N121
2N332
2N333
2N335
2N336
2N334
2SCl16
Bendix Transistors
2N1149
RCA 2n1184a
2N1152
2N1151
2N1150
RCA 2N1174
transitron
Emihus
2N1193
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st3043
Abstract: LOW-POWER SILICON NPN 40352 2N773 ST3042 bsy11 2S001 2SC859
Text: LOW-POWER SILICON NPN Item Number Part Number hFE V V(BR)CEO - V(BR)CEO Manufacturer TASSOl Ic Max (A) fT (Hz) Cobo Max (F) ICBO Max Y(BR)CBO Po Max Derate at Toper (A) (V) (W) (WrC) eC) Max Package Style >= 400 V, (Cont'd) See Index 1 800 50M 25 14p lOu
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ST3042
ST3043
3N120
3N121
2N332
2N333
2N335
2N336
2N334
2SCl16
LOW-POWER SILICON NPN
40352
2N773
bsy11
2S001
2SC859
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Newmarket Transistors
Abstract: sgs-ates transistors 2G108 2AC128-01 2N174 RCA 2BD124 2G381 2N109 2G271 2N123
Text: LOW-POWER SILICON NPN Item Number Part Number hFE V V(BR)CEO - V(BR)CEO Manufacturer TASSOl Ic Max (A) fT (Hz) Cobo Max (F) ICBO Max Y(BR)CBO Po Max Derate at Toper (A) (V) (W) (WrC) eC) Max Package Style >= 400 V, (Cont'd) See Index 1 800 50M 25 14p lOu
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ST3042
ST3043
3N120
3N121
2N332
2N333
2N335
2N336
2N334
2SCl16
Newmarket Transistors
sgs-ates transistors
2G108
2AC128-01
2N174 RCA
2BD124
2G381
2N109
2G271
2N123
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Untitled
Abstract: No abstract text available
Text: SK100GH12T4T =' Q BR SKA -%2&'' ,.8& */'& '5& /E/&1 Absolute Maximum Ratings Symbol Conditions IGBT PK:9 =T Q BR SK <K =T Q @WR SK <KY; SEMITOP 4 IGBT module SK100GH12T4T .5'( @BVV P @BX L =' Q WV SK @VV L CVV L [BV P =T Q @RV SK @V _' =' Q BR SK @VB L =' Q WV SK
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SK100GH12T4T
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PN2222A MOTOROLA
Abstract: valvo emihus philco-ford VALVO GMBH 2SC1330 DIODE 6AA 2N709A Elcoma KT503A
Text: LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 BO 85 90 95 RN5816 RN5B16 RN5818 RN5818 HSE125 HSE210 HSE171 2Nl051 2N2480 2N2479 Manufacturer V(BR)CEO hFE Ie Max A fT (Hz) Cobo V(BR)CBO Max PD Max Derate
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RN5816
RN5B16
RN5818
HSE125
HSE210
HSE171
2Nl051
2N2480
2N2479
PN2222A MOTOROLA
valvo
emihus
philco-ford
VALVO GMBH
2SC1330
DIODE 6AA
2N709A
Elcoma
KT503A
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2N3609
Abstract: 2N3633 2N3520 2N3618 motorola 2SC1330 transitron 2N3543 KT503A LOW-POWER SILICON NPN 2N3625
Text: LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 BO 85 90 95 RN5816 RN5B16 RN5818 RN5818 HSE125 HSE210 HSE171 2Nl051 2N2480 2N2479 Manufacturer V(BR)CEO hFE Ie Max A fT (Hz) Cobo V(BR)CBO Max PD Max Derate
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RN5816
RN5B16
RN5818
HSE125
HSE210
HSE171
2Nl051
2N2480
2N2479
2N3609
2N3633
2N3520
2N3618 motorola
2SC1330
transitron
2N3543
KT503A
LOW-POWER SILICON NPN
2N3625
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C 56 ph diode
Abstract: PH 21 DIODE ph-12 diode semikron SKa 6/20
Text: SK50GH12T4T =' Q BR SKA -%2&'' ,.8& */'& '5& /E/&1 Absolute Maximum Ratings Symbol Conditions IGBT PK:9 =T Q BR SK <K =T Q @WR SK <KY; SEMITOP 4 IGBT module SK50GH12T4T .5'( @BVV P WR L =' Q WV SK XV L @RV L [BV P =T Q @RV SK @V _' =' Q BR SK RX L =' Q WV SK
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SK50GH12T4T
C 56 ph diode
PH 21 DIODE
ph-12 diode
semikron SKa 6/20
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Diode SJ 56
Abstract: diode sj pj+939+diode
Text: SK50GD12T4T =' Q BR SJA -%2&'' ,.8& */'& '5& /E/&1 Absolute Maximum Ratings Symbol Conditions IGBT PJ:9 =T Q BR SJ <J =T Q @WR SJ <JY; SEMITOP 4 IGBT Module SK50GD12T4T .5'( @BVV P WR K =' Q WV SJ XV K @RV K Z BV P =T Q @RV SJ @V _' =' Q BR SJ XV K =' Q WV SJ
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SK50GD12T4T
Diode SJ 56
diode sj
pj+939+diode
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pj 56 diode
Abstract: semikron 3Y diode PJ diode ph9a
Text: SK100GD12T4T =' Q BR SJA -%2&'' ,.8& */'& '5& /E/&1 Absolute Maximum Ratings Symbol Conditions IGBT PJ:9 =T Q BR SJ <J =T Q @WR SJ <JY; SEMITOP 4 IGBT Module SK100GD12T4T .5'( @BVV P @BX K =' Q WV SJ @VV K CVV K Z BV P =T Q @RV SJ @V _' =' Q BR SJ @VB K =' Q WV SJ
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SK100GD12T4T
pj 56 diode
semikron 3Y diode
PJ diode
ph9a
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BYV42-200
Abstract: BYV72E-200 BY359-1500 PBYR1540CT PBYR1535CT PBYR10-25 BY359X-1500 BYV42-150 BYV29F500 BYV72F-200
Text: Philips Semiconductors Index Power Diodes Type Number BR211-140 BR211-160 BR 211-180 BR 211-200 BR211-220 BR211-240 BR 211-260 BR 211-280 Page 30 BR211SM-140 BR211SM-160 BR211SM-180 BR211SM-200 BR211SM-220 BR211SM-240 BR211SM-260 BR211SM-280 35 BY229-200 BY229-400
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BR211-140
BR211-160
BR211-220
BR211-240
BR211SM-140
BR211SM-160
BR211SM-180
BR211SM-200
BR211SM-220
BR211SM-240
BYV42-200
BYV72E-200
BY359-1500
PBYR1540CT
PBYR1535CT
PBYR10-25
BY359X-1500
BYV42-150
BYV29F500
BYV72F-200
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IN6284
Abstract: IN6282 IN647 2190 ctv IN6286A
Text: SENSITRON SEMICONDUCTOR 2000 CATALOG TVS 1500 Watt Transient Voltage Suppressor Uni-Directional Diodes 5.6 to 54.0Volts SERIES TYPE BREAKDOWN VOLTAGE V(BR)1 AT I(BR) TEST CURRENT I(BR) WORKING PEAK REVERSE VOLTAGE V 1500W 1N6469 1N6470 IN6471 1N6472 1N6473
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1N6469
1N6470
IN6471
1N6472
1N6473
1N6474
1N6475
1N6476
IN6284
IN6282
IN647
2190 ctv
IN6286A
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PDF
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1N6133
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR 1998 • SHORT FORM CATALOG - Revision AXIAL LEAD / MELF, TRANSIENT VOLTAGE SUPPRESSOR DIODES TRANSIENT VOLTAGE SUPPRESSORS, 500W SERIES SERIES TYPE TEST CURRENT BREAK DOWN VOLTAGE WORKING PEAK REVERSE VOLTAGE VRWM ' BR '(BR) MAXIMUM
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1N6102
1N6103
1N6104
1N6105
1N6106
1N6107
1N6108
1N6109
1N6110
1N6111
1N6133
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npn, transistor, sc 107 b
Abstract: MOTOROLA DATE CODE transistor
Text: MSC2295-BT1* MSC2295-CT1* CASE 318D-03, STYLE 1 COLLECTOR MAXIMUM RATINGS 3 Ï A = 25 C Rating Collector-Base Voltage Collector-Em itter Voltage Emitter-Base Voltage Collector Current-Continuous Symbol Value Unit v (BR)CBO 30 Vdc V(BR)CEO 20 Vdc v (BR)EBO
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MSC2295-BT1*
MSC2295-CT1*
318D-03,
SC-59
MSC2295-BT1
MSC2295-CT1
MSC2295-BT1
npn, transistor, sc 107 b
MOTOROLA DATE CODE transistor
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MSC2404-CT1
Abstract: MSC2404CT1 npn, transistor, sc 107 b
Text: MSC2404-CT1* CASE 318D-03, STYLE 1 m C OLLECTOR MAXIMUM RATINGS TA = 25"C Symbol Value Unit Collector-Base Voltage Rating V(BR)CBO 30 Vdc Collector-Emitter Voltage V(BR)CEO 20 Vdc Emitter-Base Voltage V(BR)EBO 3 Vdc 'c 15 mAdc Collector Current-Continuous
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MSC2404-CT1*
318D-03,
SC-59
MSC2404-CT1
MSC2404CT1
npn, transistor, sc 107 b
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MSB710QT1
Abstract: marking code LG transistors
Text: MSB710-QT1 MSB710-RT1* CASE 318D-03, STYLE 1 MAXIMUM RATINGS |TA = 25 Cl Rating Value Unit Collector-Base Voltage v BR CBO -3 0 Vdc Collector-Emitter Voltage V(BR)CEO -2 5 Vdc Emitter-Base Voltage v (BR)EBO -7 Vdc 'c -5 0 0 mAdc 'C(P) -1 Ade Symbol Max Unit
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OCR Scan
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MSB710-QT1
MSB710-RT1*
318D-03,
SC-59
MSB710-RT1
MSB710-QT1
MSB710-RT1
MSB710QT1
marking code LG transistors
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Untitled
Abstract: No abstract text available
Text: MSD1328-RT1* CASE 318D-03, STYLE 1 M A XIM U M R ATINGS TA = 25 C C O LLEC TO R 3 Rating Symbol Value Unit n Collector-Base Voltage v (BR)CBO 25 Vdc Collector-Emitter Voltage v (BR)CEO 20 Vdc Emitter-Base Voltage v E(BR)BO 12 Vdc Collector Current-Continuous
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OCR Scan
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MSD1328-RT1*
318D-03,
SC-59
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Untitled
Abstract: No abstract text available
Text: MSD602-RT1* CASE 318D-03, STYLE 1 M A XIM U M R ATINGS TA = 25 C Rating Symbol Value Unit V(BR)CBO 30 Vdc Collector-Em itter Voltage V(BR)CEO 25 Vdc Em itter-Base Voltage VE(BR)BO Collector-Base Voltage 7 Vdc 500 mAdc IÇIP) 1 Ade Collector Current-Continuous
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OCR Scan
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MSD602-RT1*
318D-03,
SC-59
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Untitled
Abstract: No abstract text available
Text: MSB709-RT1* MSB709-ST1 CASE 318D-03, STYLE 1 M A XIM U M RATINGS TA = 25 C Symbol Value U n it Collector-Base Voltage Rating V(BR)CBO -2 5 Vdc Collector-Em itter Voltage v (BR)CEO -2 5 Vdc Emitter-Base Voltage v (BR)EBO -7 Vdc 'C -1 0 0 mAdc 'C(P) -2 0 0
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OCR Scan
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MSB709-RT1*
MSB709-ST1
318D-03,
SC-59
SB709-RT1
MSB709-ST1
MSB709-RT1
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