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    1N5831

    Abstract: MN5830 1n5829 MN5829 1N5631 1N5830
    Text: MOTOROLA SC DIODES/OPTO b4E D • b3b7ESS 00flb27S 7bT « M O T ? MOTOROLA ■ I SEMICONDUCTOR TECHNICAL DATA 1N 5829 1N 5830 1N5831 M BR5831H, H1 Designer's Data Sheet S w itc h m o d e P o w e r R e c tifie rs . employing the Schottky Barrier principle in a large area metal-to-silicon power


    OCR Scan     		PDF 00flb27S 1N5831 MN5830 1n5829 MN5829 1N5631 1N5830

    1N5829

    Abstract: No abstract text available
    Text: 1N5829,1N5830 1N5831 BR5831H, HI gl MOTOROLA l t ‘w i{ ïin « r s D a t a S h e e t H O T C A R R IE R P O W E R R E C T IF IE R S S C H O T T K Y B A R R IE R R E C T IF IE R S . e m p lo y in g th e S c h o ttk y B a rrie r p r in c ip le in a la rg e area m e ta lto -s ih c o n p o w e r diod e. S ta te -o f- th e -a rt g e o m e try fe a tu re s e p ita x ia l


    OCR Scan     		PDF BR5831 1N5829