BR211 equivalent
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Breakover diodes BR211 series GENERAL DESCRIPTION QUICK REFERENCE DATA SYMBOL A range of bidirectional, breakover diodes in an axial, hermetically sealed, glass envelope. These devices feature controlled breakover
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BR211
BR211-140
LIMITIN00
BR211 equivalent
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BRS212-280
Abstract: BRS212-220 BR211 BRS212 BRS212-140 BRS212-160 BRS212-180 BRS212-200 BRS212-240 BRS212-260
Text: Philips Semiconductors Product specification Breakover diodes BRS212 series GENERAL DESCRIPTION QUICK REFERENCE DATA A range of bidirectional, breakover diodes in a two terminal, surface mounting, plastic envelope. These devices feature controlled breakover
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BRS212
BRS212-140
BRS212-160
BRS212-180
BRS212-200
BRS212-220
BRS212-240
BRS212-260
BRS212-280
16ion
BRS212-280
BRS212-220
BR211
BRS212-140
BRS212-160
BRS212-180
BRS212-200
BRS212-240
BRS212-260
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BR211
Abstract: BR211SM BR211SM-140 BR211SM-160 BR211SM-180 BR211SM-200 BR211SM-220 BR211SM-240 BR211SM-260 BR211SM-280
Text: Philips Semiconductors Preliminary specification Breakover diodes GENERAL DESCRIPTION BR211SM series QUICK REFERENCE DATA A range of bidirectional, breakover diodes in a two terminal, surface mounting, plastic envelope. These devices feature controlled breakover
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BR211SM
BR211SM-140
BR211SM-280
OD106
BR211
BR211SM-160
BR211SM-180
BR211SM-200
BR211SM-220
BR211SM-240
BR211SM-260
BR211SM-280
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BR211-220
Abstract: BR211 equivalent RT-HE BR211 BR211-140 BR211-160 BR211-180 BR211-200 BR211-240 BR211-260
Text: Philips Semiconductors Product specification Breakover diodes GENERAL DESCRIPTION BR211 series QUICK REFERENCE DATA A range of bidirectional, breakover diodes in an axial, hermetically sealed, glass envelope. These devices feature controlled breakover voltage and high holding current
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BR211
BR211-140
BR211-XXX
BR211-220
BR211 equivalent
RT-HE
BR211-160
BR211-180
BR211-200
BR211-240
BR211-260
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Untitled
Abstract: No abstract text available
Text: Philips Sem iconductors Preliminary specification Breakover diodes BR211SM series GENERAL DESCRIPTION A range of bidirectional, breakover diodes in a two terminal, surface mounting, plastic envelope. These devices feature controlled breakover voltage and high holding current
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BR211SM
BR211SM-140
BR211SM-280
OUTLINE-SOD106
13emperature.
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BR211 equivalent
Abstract: BR211-220 philips br211 220 RTHE BR211 BR211-100 BR211-120 BR211-140 BR211-160 BR211-180
Text: Philips Semiconductors Product specification Breakover diodes BR211 series GENERAL DESCRIPTION QUICK REFERENCE DATA A range of bidirectional, breakover diodes in an axial, hermetically sealed, glass envelope. These devices feature controlled breakover voltage and high holding current
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BR211
BR211-100
BR211-XXX
BR211 equivalent
BR211-220
philips br211 220
RTHE
BR211-120
BR211-140
BR211-160
BR211-180
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BR211 equivalent
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Breakover diodes GENERAL DESCRIPTION BR211 series QUICK REFERENCE DATA A range of bidirectional, breakover diodes in an axial, hermetically sealed, glass envelope. These devices feature controlled breakover voltage and high holding current
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BR211
BR211-100to
BR211 equivalent
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breakover device
Abstract: No abstract text available
Text: B R 2 1 0 S E R IE S _ BREAKOVER DIODES A range o f glass-passivated bidirectional breakover diodes in the TO-220AC outline, available in a + /— 12% tolerance series o f nominal breakover voltage. Their controlled breakover voltage and peak
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O-220AC
BR210--100
TQ-220AC
BR210
breakover device
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DIODE T25 4 Jo
Abstract: DIODE T25 4 bo DIODE T25-4-bo
Text: N AMER PHILIPS/DISCRETE bbS3TBl D011011 S BR210 SERIES □ bE D T - 2 S - O G - BREAKOVER DIODES A range o f glass-passivated bidirectional breakover diodes in the TO-220AC outline, available in a + / 12% tolerance series of nominal breakover voltage. Their controlled breakover voltage and peak
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D011011
BR210
O-220AC
BR210â
b53T31
DD11021
bbS3T31
OD11QSS
DIODE T25 4 Jo
DIODE T25 4 bo
DIODE T25-4-bo
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DIAC DB3
Abstract: diac DB3 Do 35 diac 083
Text: SILICON BIDIRECTIONAL DIAC DB3 TECHNICAL SPECIFICATION FEATURES VOLTAGE 32 Volts VBO typ. 32V typical breakover voltage CURRENT 100 µAmps (IBO max.) Low breakover current at breakover voltage Three layer, hermetically sealed body DIMENSIONS - millimeters (inches)
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DO-35
DO-35,
100Hz
DIAC DB3
diac DB3 Do 35
diac 083
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100MS
Abstract: BR210-100 pjiy M3076
Text: 25E D • ^53=133. 0G22243 4 ■ BR210 SERIES N AUER PHILIPS/DISCRETE T - 2 S - 0 ^ BREAKOVER DIODES A range of glass-passivated bidirectional breakover diodes in the TO-220AC outline, available in a + / 12% tolerance series of nominal breakover voltage. Their controlled breakover voltage and peak
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0G22E43
BR210
O-220AC
BR210â
O-22QAC
100MS
BR210-100
pjiy
M3076
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SM2F
Abstract: M2480 BR216
Text: BR216 _ DUAL ASYMMETRICAL BREAKOVER DIODE The BR216 is a monolithic dual asymmetrical 65 V breakover diode in the T0-220AB outline. Each half o f the device conducts normally in one direction, but in the other direction it acts as a breakover diode.
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BR216
BR216
T0-220AB
M3231
SM2F
M2480
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D-30A
Abstract: DIAC EQUIVALENT circuit DIAC 5 VOLT D40A D-60A DIAC BR 100 number diac
Text: Hutson Industries,Inc. 1000 Hutson Circle Frisco, TX 75034 TEL: 972 335-8600 Fax:(972)377-2197 DO-35 DIAC All dimensions in Inches. ELECTRICAL CHARACTERISTICS (Tc = 25°C) Breakover Voltage Breakover Voltage Symmetry Dynamic Breakback Voltage Breakover Current
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DO-35
D-30A
D-40A
D-60A
D-30A/T
D-30A
DIAC EQUIVALENT circuit
DIAC 5 VOLT
D40A
D-60A
DIAC BR 100
number diac
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Untitled
Abstract: No abstract text available
Text: 2SE D • ^53=133. 00 22 2 4 3 4 N AflER PHILIPS/DISCRETE B R 210 SER IES T-2S-O S' 7 V BREAKOVER DIODES A range of glass-passivated bidirectional breakover diodes in the TO-220AC outline, available in a + /— 12% tolerance series of nominal breakover voltage. Their controlled breakover voltage and peak
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O-220AC
BR210â
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diac db3
Abstract: DIA DB3 db3 diac 220v motor speed control circuit with scr diac 083 10KW R20W DB3 diode DIAc DB4
Text: SIGNAL BIDIRECTIONAL DIAC DB3 / DB4 Features The three layer, two terminal, axial lead, hermetically sealed diacs are designed specifically for triggering thyristors. They demonstrate low breakover current at breakover voltage as they withstand peak pulse current. The breakover
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DO-35
500KW
100Hz
diac db3
DIA DB3
db3 diac
220v motor speed control circuit with scr
diac 083
10KW
R20W
DB3 diode
DIAc DB4
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db3 diac
Abstract: DB6 diac diode db6 diac db3 universal MOTOR speed control DIAc DB4 db3 Ib DB-3 DIAC EQUIVALENT circuit DC34
Text: DB3/DC34/DB4/DB6 SILICON BIDIRECTIONAL DIAC FEATURES The three layer,two terminal, axial lead, hermetically sealed diacs are designed specifically for triggering thyristors. They demonstrate low breakover current at breakover voltage as they withstand peak pulse current,The breakover
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DB3/DC34/DB4/DB6
DB3/DC34/DB4/DB6
db3 diac
DB6 diac
diode db6
diac db3
universal MOTOR speed control
DIAc DB4
db3 Ib
DB-3
DIAC EQUIVALENT circuit
DC34
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DIAC DB3
Abstract: DIAC EQUIVALENT circuit db3 diac DB3 Diode db3 Ib diac DB3 application note DC34 diode db6 DB6 diac DIAc DB4
Text: CE DB3/DC34/DB4/DB6 CHENYI ELECTRONICS SILICON BIDIRECTIONAL DIAC FEATURES The three layer,two terminal, axial lead, hermetically sealed diacs are designed specifically for triggering thyristors. They demonstrate low breakover current at breakover voltage as they withstand peak pulse current,The breakover
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DB3/DC34/DB4/DB6
DB3/DC34/DB4/DB6
DIAC DB3
DIAC EQUIVALENT circuit
db3 diac
DB3 Diode
db3 Ib
diac DB3 application note
DC34
diode db6
DB6 diac
DIAc DB4
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Untitled
Abstract: No abstract text available
Text: DB3 THRU DB6 SILICON BIDIRECTIONAL DIAC DO-35 GLASS The three layer,two terminal,axial load, hermetically sealed diaces are designed specifically for triggering thyristors. They demonstrate low breakover current at breakover voltage as they withstand peak pulse current, The breakover symmetry is whiin
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DO-35
500KW
100Hz
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10KW
Abstract: DC34 T125 diode db3
Text: LLDB3 /LLDC 34/LLD B4/LL DB6 SILICON BIDIRECTIONAL DIAC FEATURES Mini-MELF The three layer, two terminal, axial lead, hermetically sealed diacs are designed specifically for triggering thyristors. They demonstrate low breakover current at breakover voltage as they withstand peak pulse current, The breakover
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34/LLD
DB3/DC34/DB4/DB6
500KW
100Hz
10KW
DC34
T125
diode db3
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BR210-100
Abstract: No abstract text available
Text: Philips Components BR210 s e r ie s _ A_ Supersedes February 1988 data BREAKOVER DIODES A range o f glass-passivated b id ire c tio n a l breakover diodes in the TO -220 A C o u tlin e , available in a + /— 12% tolerance series o f nom inal breakover voltage. T h e ir c o n tro lle d breakover voltage and peak
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BR210
O-220AC
BR210â
100to
TQ-220AC
M88-1438/Y
BR210-100
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DIODE T25 4 bo
Abstract: DIACS DC34 Bidirectional Diode Thyristors DIODE T25-4-bo
Text: R DB3/DC34/DB4/DB6 SILICON BIDIRECTIONAL DIAC SEMICONDUCTOR DO-35 GLASS FEATURES The three layer, two terminal, axial lead, hermetically sealed diacs are designed specifically for triggering thyristors. They demonstrate low breakover 1.083(27.5) MIN current at breakover voltage as they withstand peak pulse current, The breakover
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DB3/DC34/DB4/DB6
DO-35
DB3/DC34/DB4/DB6
100Hz
DIODE T25 4 bo
DIACS
DC34
Bidirectional Diode Thyristors
DIODE T25-4-bo
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ZENER MIO
Abstract: DIACS DO-35 5V1
Text: rZ 7 SGS-THOMSON ^ 7# GENERAL PURPOSE & INDUSTRIAL MM ôm[l(STOM(£S MEDIUM POWER THYRISTORS & TRIACS < 100 A TRIGGER DIODES (DIACS Breakover voltage Breakover voltage sym m etry Breakover current A V betw een 0 and 10 mA min. (V) Package Type m io nom m ax
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Untitled
Abstract: No abstract text available
Text: N A PIER PHILIPS/DISCRETE OLE D 1,^53=131 DQ110E3 1 BR220 SERIES r - 3 5 " - OS- DUAL BREAKOVER DIODES The BR220 is a range of monolithic diffusion-isolated glass-passivated dual bidirectional breakover diodes in the TO-220AB outline, available in a + /— 12% tolerance series of nominal breakover voltage.
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DQ110E3
BR220
O-220AB
bbS3T31
0011D3S
bb53131
001103b
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TC0640H
Abstract: TC0720H TC0900H TC1100H TC1500H TC2300H TC2600H TC3100H TC3500H
Text: Thyristor Surge Protective Device Surface Mount TSPD Part Number OffOnRated State State Repetitive Leakage Breakover Voltage Off-State Current Voltage d Voltage I f lA @ VDRM Nonrepetitive Peak impulse current ^ Nonrepetitive peak On-state Breakover current
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10/1000us
TC0640H
TC0720H
TC0900H
TC1100H
TC13DDH
TC1500H
TC18Dreakover
TC2300H
TC2600H
TC3100H
TC3500H
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