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    Halbleiterbauelemente DDR

    Abstract: information applikation applikation heft mikroelektronik Heft "halbleiterwerk frankfurt" mikroelektronik Heft 12 information applikation mikroelektronik "Mikroelektronik" Heft VEB mikroelektronik "information applikation"
    Text: m ffik a r ^ e le l-c b n a r iîl-c Information Applikation [ n nf l^ On i □ Information Applikation Heft : 3 7 Qualitätssicherung - Zuverlässigkeit veto halbtaMfcorwerk frankfurt/oder bateriabkn veb kombinat mikroelektrontk KAMMER PER TECHNIK Vorslond des Beiirkiverbondei


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    MSP-13-19

    Abstract: No abstract text available
    Text: BYV32 SERIES _ ULTRA FAST RECOVERY DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency double rectifier diodes in plastic envelopes, featuring low forward voltage drop, ultra fast reverse recovery times and soft-recovery characteristic. They are intended fo r


    OCR Scan     		PDF BYV32 MSP--1319/7 MSP-13-19

    100MS

    Abstract: BR210-100 pjiy M3076
    Text: 25E D • ^53=133. 0G22243 4 ■ BR210 SERIES N AUER PHILIPS/DISCRETE T - 2 S - 0 ^ BREAKOVER DIODES A range of glass-passivated bidirectional breakover diodes in the TO-220AC outline, available in a + / 12% tolerance series of nominal breakover voltage. Their controlled breakover voltage and peak


    OCR Scan     		PDF 0G22E43 BR210 O-220AC BR210â O-22QAC 100MS BR210-100 pjiy M3076