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    BS616LV4011EC Search Results

    BS616LV4011EC Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BS616LV4011EC Brilliance Semiconductor Very Low Power/Voltage CMOS SRAM 256K x 16 bit Original PDF
    BS616LV4011EC-10 Brilliance Semiconductor Very Low Power/Voltage CMOS SRAM 256K x 16 bit Original PDF
    BS616LV4011EC-70 Brilliance Semiconductor Very Low Power/Voltage CMOS SRAM 256K x 16 bit Original PDF

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    BS616LV4011

    Abstract: BS616LV4011AC BS616LV4011AI BS616LV4011BC BS616LV4011BI BS616LV4011DC BS616LV4011DI BS616LV4011EC BS616LV4011EI TSOP2-44
    Text: BSI Very Low Power/Voltage CMOS SRAM 256K X 16 bit BS616LV4011 „ FEATURES „ DESCRIPTION • Very low operation voltage : 2.4 ~ 5.5V • Very low power consumption : Vcc = 3.0V C-grade: 20mA Max. operating current I-grade: 25mA (Max.) operating current


    Original     		BS616LV4011 100ns R0201-BS616LV4011 BS616LV4011 BS616LV4011AC BS616LV4011AI BS616LV4011BC BS616LV4011BI BS616LV4011DC BS616LV4011DI BS616LV4011EC BS616LV4011EI TSOP2-44 PDF

    BS616LV4011

    Abstract: BS616LV4011BC BS616LV4011BI BS616LV4011DC BS616LV4011DI BS616LV4011EC BS616LV4011EI TSOP2-44
    Text: BSI Very Low Power/Voltage CMOS SRAM 256K X 16 bit BS616LV4011 „ FEATURES „ DESCRIPTION • Very low operation voltage : 2.4 ~ 5.5V • Very low power consumption : Vcc = 3.0V C-grade: 20mA Max. operating current I-grade: 25mA (Max.) operating current


    Original     		BS616LV4011 100ns -40oC 8x10mm) TSOP2-44 R0201-BS616LV4011 BS616LV4011 BS616LV4011BC BS616LV4011BI BS616LV4011DC BS616LV4011DI BS616LV4011EC BS616LV4011EI TSOP2-44 PDF