KAF-10500
Abstract: PS-0982
Text: DEVICE PERFORMANCE SPECIFICATION Revision 4.0 MTD/PS-0962 December 1, 2006 KODAK KAF-10500 IMAGE SENSOR 3970 H X 2646 (V) FULL-FRAME CCD COLOR IMAGE SENSOR TABLE OF CONTENTS Summary Specification . 4
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MTD/PS-0962
KAF-10500
PS-0982
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KAF-10500
Abstract: KE-25 1000X kodak kaf 10500 KEK-4H0846-KAF-10500-12-24
Text: DEVICE PERFORMANCE SPECIFICATION Revision 5.0 MTD/PS-0962 July 26, 2007 KODAK KAF-10500 IMAGE SENSOR 3970 H X 2646 (V) FULL-FRAME CCD COLOR IMAGE SENSOR TABLE OF CONTENTS Summary Specification . 4
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Original
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MTD/PS-0962
KAF-10500
MTD/PS-1039
MTD/PS-0962
KE-25
1000X
kodak kaf 10500
KEK-4H0846-KAF-10500-12-24
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Untitled
Abstract: No abstract text available
Text: MICRON S E M I C O N D U C T O R INC i h3E D • blllSMT G G Q ñ 2 n BS7 H M R N MT16D88C51232 512K x 32,1 MEG x 16 IC DRAM CARD I 2 MEGABYTES IC DRAM CARD 512K x 32, 1 MEG x 16 FEATURES PIN ASSIGNMENT End View 88-Pin Card (DF-1) OPTIONS MARKING • Timing
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MT16D88C51232
88-Pin
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Untitled
Abstract: No abstract text available
Text: • fi cl 3 5 1.OS GlG3mO bS7 SIEM ENS TrilithIC BTS 775 P relim in ary Data Overview Features • • • • Quad switch driver Free configurable as bridge or quad-switch Optimized for DC motor management applications Ultra low R ds on @ 25 °C: High-side switch: typ.85 m il,
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P-DSO-28-9
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smd code book 13t
Abstract: transistor SMD 13t 13t smd transistor SIPMOS application note SMD marking DHS 2128x
Text: • fl El 3 5 1. GS G 1 0 3 4 1 0 bS7 . SIE M E N S T rilith lC BTS 775 P re lim in a ry D ata Overview Features • • • • • • • • • • • • • • • • • Quad switch driver Free configurable as bridge or quad-switch Optimized for DC motor management applications
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El35tiGS
010341D
235b05
010342b
P-DSO-28-9
2128X
smd code book 13t
transistor SMD 13t
13t smd transistor
SIPMOS application note
SMD marking DHS
2128x
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Untitled
Abstract: No abstract text available
Text: SIEM EN S BAR 65-07 Silicon RF Switching Diode Preliminary data • Low loss, low capacitance PIN-Diode • Band switch for TV-tuners • Series diode for mobile communications transmit-receive switch • Unconnected pair Type Marking Ordering Code BAR 65-07
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OT-143
0235bD5
0235bQ5
Q12Q541
100MHz
E35bG5
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Untitled
Abstract: No abstract text available
Text: SILICON PLANAR EPITAXIAL TRANSISTORS P-KJ-P transistors Marking BCW89 = H3 PA CKA GE OU TLINE DETAILS A LL DIM ENSIO NS IN mm O .U Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR ABSOLUTE MAXIMUM RATINGS Collector-base voltage open emitter Collector-emitter voltage (open base)
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BCW89
23fl33T4
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BCW89
Abstract: BS7 marking
Text: L BCW89 SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P transistors Marking BCW89 = H3 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 0.60 0.40 _t.02_ 0.89 2.00 1.80 ABSOLUTE MAXIMUM RATINGS
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BCW89
23A33T4
0D0Q773
BCW89
BS7 marking
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Untitled
Abstract: No abstract text available
Text: SIEMENS NPN Silicon High-Voltage Transistors BFN 24 BFN 26 • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: BFN 25, BFN 27 PNP Type
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Q62702-F1065
Q62702-F976
OT-23
fl535b05
aE35hDS
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF1P02LT1 Motorola Preferred Device Low rDS on Sm all-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET Part of the GreenLine Portfolio of devices with energyconserving traits.
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MGSF1P02LT1
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d2 SMD TRANSISTORs pnp npn
Abstract: BCW600 2n2222a smd smd transistors B5R17 hS7 marking darlington bc smd smd marking BJ
Text: SMD Transistors SOT-23 Case 350mW Proelectron Series— Confd Q <' H MARKING CODE SIMILAR LEADED DEVICE — 3K BC5586 — 3L Cofc PF MAX (MHz) TYP NF (dB) MAX tofF (mA) 0.65 100 4.5 150 10 0.65 100 4.5 150 10 2.0 0.65 100 4.5 150 4.0 — 50 2.0 0.65 100
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OT-23
350mW
bc858b
bc558b
bc858c
bc558c
bc859
bc559
bc859a
bc559a
d2 SMD TRANSISTORs pnp npn
BCW600
2n2222a smd
smd transistors
B5R17
hS7 marking
darlington bc smd
smd marking BJ
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Untitled
Abstract: No abstract text available
Text: SONY CXP82200 CMOS 8-bit Single Chip Microcomputer EPROM equipped Description The CXP82200 is a C M O S 8-bit single chip microcomputer of piggyback/evaluator combined type, which is developed for evaluating the function of the CXP82220/82224. Features • Wide-range instruction system 213 instructions to
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CXP82200
CXP82200
CXP82220/82224.
16-bit
400ns
10MHz
122jj5
32kHz
27C128,
27C256
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ICOTRON
Abstract: No abstract text available
Text: Metallized Polyester Film Capacitors MKT Axial Leads B 32 237 High-voltage capacitors Cylindrical winding Construction • Dielectric: polyethylene terephthalate (polyester) • Cylindrical winding • In tubular plastic case • Face ends sealed with epoxy resin
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A23SbDS
ICOTRON
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rde 090
Abstract: BFJ309LT1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET VHF/UHF A m plifier Transistor N-Channel MMBFJ309LT1 MMBFJ310LT1 2 SOURCE GATE 1 DR AIN MAXIMUM RATINGS Symbol Value Unit Drain-Source Voltage V DS 25 Vdc Gate-Source Voltage VGS 25 Vdc ta 10 mAdc Symbol Max Unit
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MMBFJ309LT1
MMBFJ310LT1
rde 090
BFJ309LT1
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Untitled
Abstract: No abstract text available
Text: PD - 9.543C International I R Rectifier IRFPG50 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements V DSS= 1000V ^DS on “ 2 -0 ^ lD = 6.1 A Description
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IRFPG50
3150utram
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d2 SMD TRANSISTORs pnp npn
Abstract: BCS59 2n2222a smd BC558B BC558C BC559 BC858B BC858C BC859 SMD marking bcw60
Text: SMDTransistors SOT-23 Case 350mW Proelectron Series—Confd « TYPE NO. DESCRIPTION BC858B BC858C BC859 BC859A BC859B BC859C BC860 BC860A BC860B BC860C PNP LOW NOISE PNP LOW NOISE PNP LOW NOISE PNP LOW NOISE PNP LOW NOISE PNP LOW NOISE PNP LOW NOISE PNP LOW NOISE
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OT-23
350mW
BC858B
BC558B
BC858C
BC558C
BC859
BC559
BC859A
BCS59A
d2 SMD TRANSISTORs pnp npn
BCS59
2n2222a smd
SMD marking bcw60
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BCB60
Abstract: transistor smd npn ag smd npn darlington "low noise" npn bcf70 d2 SMD TRANSISTORs pnp npn darlington bc smd H7 marking code smd marking code transistors BSV52 SMD MARKING CODE vk
Text: SMDTransistors SOT-23 Case 350mW Proelectron Series—Confd « TYPE NO. DESCRIPTION BC858B BC858C BC859 BC859A BC859B BC859C BC860 BC860A BC860B BC860C PNP LOW NOISE PNP LOW NOISE PNP LOW NOISE PNP LOW NOISE PNP LOW NOISE PNP LOW NOISE PNP LOW NOISE PNP LOW NOISE
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OT-23
350mW
BC858B
BC558B
BC858C
BC558C
BC859
BC559
BC859A
BCS59A
BCB60
transistor smd npn ag
smd npn darlington
"low noise" npn
bcf70
d2 SMD TRANSISTORs pnp npn
darlington bc smd
H7 marking code smd
marking code transistors BSV52
SMD MARKING CODE vk
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BLF177
Abstract: philips ET-E 60 4312 020 36642 2222 030 capacitor philips MARKING H3B WCA244
Text: bbS3^31 GOSTfi?1! Philips Semiconductors H3B [A P X Product specification BLF177 HF/VHF power MOS transistor N AMER P H I L I P S / D I S C R E T E b'iE D PIN CONFIGURATION FEATURES • High power gain • Low intermodulation distortion • Easy power control
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BLF177
OT121
MBA379
philips ET-E 60
4312 020 36642
2222 030 capacitor philips
MARKING H3B
WCA244
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Untitled
Abstract: No abstract text available
Text: LTC1481 / T L i nTECHNOLOGY Ç A B Ultra-Low Power RS485 Transceiver with Shutdown F€RTURCS DCSCRIPTIOn • ■ ■ ■ ■ ■ ■ The LTC1481 is an ultra-low power differential line trans ceiver designed for data transmission standard RS485 applications. It will also meet the requirements of RS422.
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LTC1481
RS485
LTC1481
RS485
RS422.
120pA
500nA
551fl4fc
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S2919AIF10
Abstract: S-2919aif10 seiko 64 s chip
Text: S-2919AR/I C M O S 1 K -b it s e r ia l E P R O M E a s y in terfa ce with se ria l port T h e S -2919A R /I is a high sp e e d , low pow er 1 K-bit E2 P R O M that u s e s the C M O S floating-gate p ro c e s s. T h e organization is 64-word x 16-bit, and it is read or
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S-2919AR/I
-2919A
64-word
16-bit,
A123443
81234M3
S2919AIF10
S-2919aif10
seiko 64 s chip
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PDF
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Untitled
Abstract: No abstract text available
Text: r r u v m TECHNOLOGY Dual/Quad Micropower, 260jiW C-Load Picoampere Bias Current JFET Input Op Amps FCRTURCS D C S C R IP T IO H • Input Bias Current: 2pA M ax LT146 2A 20pA M a x (L T 1 4 6 2 , LT146 3 ) ■ Supply Current per Am plifier: 45|j A M ax
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260jiW
LT146
175kHz
SO-14
480pA
LT1169
LT1457
000pF
450nV
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PDF
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SIEMENS WF 470
Abstract: No abstract text available
Text: SIEMENS Single Wire CAN-Transceiver TLE 6255 G Target Data Sheet Features • • • • • • • • • • • • • Single wire Transceiver Ambient operation range - 40 °C to 125 °C Supply voltage operation range 5.5 V to 28 V Very low current consumption in sleep mode
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067006-A9352
P-DSO-14
0S35bQ5
P-DSO-14-4
S235b05
SIEMENS WF 470
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PDF
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Transistor TT 2246
Abstract: No abstract text available
Text: W hp% m LUM H E W L E TT PA CKA RD 1 .5 -1 8 GHz Surface Mount Pseudomorphic HEMT Technical Data ATF-36163 Features Surface Mount Package • Low M inim um N oise Figure: I dB Typical at 12 GHz 0.6 dB Typical at 4 GHz • A sso ciated Gain: 9.4 dB Typical at 12 GHz
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ATF-36163
OT-363
5964-4069E
5965-4747E
Transistor TT 2246
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1N5415
Abstract: 1N5415US 1N5416US 1N5417US 1N5420 1N5420US
Text: MME D MIL SPECS MILS □□□□IBS 0Q3MSbS 2TT i- 1 I INCH-POUND | I_ l | The documentation and process conversion | j measures necessary to comply with this | | revision shall be completed by 1 August 19941
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003MSb5
1N5415
1N5420,
1N5415US
1N5420US,
MIL-S-19500.
MIL-S-19500
1N5416US
1N5417US
1N5420
1N5420US
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