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Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: BSM10GD100D Transistors Three-Phase Bridge IGBT Power Module Isolated Case Y/N Circuits Per Package1 V(BR)CES (V)1.0k V(BR)GES (V) I(C) Max. (A)10 Absolute Max. Power Diss. (W)50 Minimum Operating Temp (øC) Maximum Operating Temp (øC) Thermal Resistance Junc-Case2.5	Original	BSM10GD100D	PDF
BSM10GD100 Abstract: BSM10GD100D Text: SIEMENS IGBT Module BSM 10 GD 100 D Preliminary Data VCE = 1000 V / c = 6 x 1 1 A at Tc = 25 "C / c = 6 x 1 0 A at r c = 40 C • Power module • 3-phase full bridge • Including fast free-wheel diodes • Package with insulated metal base plate • Package outlines/Circuit diagram: 6a1	OCR Scan	C67076-A2507-A52 SI100310 BSM10GD100D SII00313 BSM10GD100 BSM10GD100D	PDF
BSM10GD100D Abstract: BSM10GD100 siemens igbt btb 148 600 GGM5 transient Diode bge Text: bO E D • ÔE3SLiQS G G M 5 7 Ö 4 SIEMENS ^ 7 SIEMENS «SIEG AKTIENGESELLSCHAF BSM 10 GD 100 D IGBT Module Preliminary Data V CE = 1000 V I c = 6 x 11 A at T c = 25 C / c = 6 x 1 0 A a t 7'c = 40 C • • • • • Power m odule 3-phase full bridge Including fast free-wheel diodes	OCR Scan	GGM57Ã C67076-A2507-A52 BSM10GD100D BSM10GD100 siemens igbt btb 148 600 GGM5 transient Diode bge	PDF
bsm10gd100dn1 Abstract: BSM10GD100DN BTS 302 BSM10GD100 E6327 BUZ 324 E6288 eTS 410 siemens bsm 101 AR C67076-A2505-A52 Text: SIEMENS Typ/Bestellnummern Type/Ordering Codes Ordering code Type BRT 11 H C67079-A1000-A6 BSM 50 GAL 100 D C67076-A2002-A2 BRT 11 H Option 7 C67079-A1040-A11 BSM 50 GAL 120 D C67076-A2010-A2 BRT 11 H Option 1 + 7 C67079-A1040-A17 BSM 50 GB 100 D C67076-A2100-A2	OCR Scan	E-6288 BSM10GD100DN1 C67079-A1000-A6 C67079-A1040-A11 C67079-A1040-A17 C67079-A1001-A6 C67079-A1041-A5 C67079-A10436 E-6327 BSM10GD100DN BTS 302 BSM10GD100 E6327 BUZ 324 E6288 eTS 410 siemens bsm 101 AR C67076-A2505-A52	PDF