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    onsemi NCP718BSN120T1G

    IC REG LIN 1.2V 300MA TSOT23-5
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    DigiKey NCP718BSN120T1G Cut Tape 1,922 1
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    NCP718BSN120T1G Digi-Reel 1,922 1
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    NCP718BSN120T1G Reel 3,000
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    Avnet Americas NCP718BSN120T1G Reel 0 Weeks, 2 Days 4,167
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    NCP718BSN120T1G Reel 22 Weeks 6,000
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    Mouser Electronics NCP718BSN120T1G 952
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    Newark NCP718BSN120T1G Bulk 3,000
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    Rochester Electronics NCP718BSN120T1G 27,000 1
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    TME NCP718BSN120T1G 1
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    Avnet Silica NCP718BSN120T1G 23 Weeks 3,000
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    Wuhan P&S NCP718BSN120T1G 1,920 1
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    Rochester Electronics LLC NCV8114BSN120T1G

    IC REG LINEAR 1.2V 300MA 5TSOP
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    DigiKey NCV8114BSN120T1G Bulk 3,493
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    onsemi NCV8114BSN120T1G

    IC REG LINEAR 1.2V 300MA 5TSOP
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    Rochester Electronics NCV8114BSN120T1G 71,900 1
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    LeaderTech 40X-CBSN-1.25X1.5X0.28

    RF SHIELD 1.25" X 1.5" SMD
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    DigiKey 40X-CBSN-1.25X1.5X0.28 Bulk 20
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    Mouser Electronics 40X-CBSN-1.25X1.5X0.28
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    LeaderTech 40X-CBSN-1.25X7.75X0.28

    RF SHIELD 1.25" X 7.75" SMD
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    DigiKey 40X-CBSN-1.25X7.75X0.28 Bulk 20
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    Mouser Electronics 40X-CBSN-1.25X7.75X0.28
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    BSN12 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BSN12 Philips Semiconductors N-Channel Enhancement Mode Vertical D-MOS Transistor Original PDF
    BSN12A Philips Semiconductors N-Channel Enhancement Mode Vertical D-MOS Transistor Original PDF

    BSN12 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Embedded DRAM Cu-11 Embedded DRAM Functional Summary • Two configurations: x 256 or x 292 • 1 Mb to 16 Mb in 1 Mb increments - Multiple macros per chip for greater capacity or functional flexibility - Additional width for parity • Data I/O organization:


    Original
    Cu-11 256-bit 292-bit 16-bit PDF

    TCA780

    Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
    Text: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP


    Original
    1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP TCA780 TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G PDF

    4833

    Abstract: IBM "embedded dram" SI10 cu-11 A03-A11 bsn15
    Text: Embedded DRAM Cu-11 Embedded DRAM Functional Summary • Two configurations: x 256 or x 292 • 1 Mb to 16 Mb in 1 Mb increments - Multiple macros per chip for greater capacity or functional flexibility - Additional width for parity • Data I/O organization:


    Original
    Cu-11 256-bit 292-bit 16-bit 4833 IBM "embedded dram" SI10 cu-11 A03-A11 bsn15 PDF

    icl 2822

    Abstract: 1004CL 0398C BW002 CCGA 472 device dimensional details diode marking B4Z 0844C 4046 PLL Designers Guide AOI2222 2-bit comparator
    Text: Preliminary ASIC Cu-11 Databook Notices: Before using this information and the product it supports, be sure to read the general information on the back cover of this book. Trademarks: The following are trademarks or registered trademarks of International Business Machines


    Original
    Cu-11 SA14-2449-00 icl 2822 1004CL 0398C BW002 CCGA 472 device dimensional details diode marking B4Z 0844C 4046 PLL Designers Guide AOI2222 2-bit comparator PDF

    BSN12

    Abstract: BSN12A
    Text: m PhillpsSemiconductors 7110aab 0 0b773g 53b H i PHI N N-channel enhancement mode vertical D-MOS transistors FEATURES Product specification dokho dormo a BSN12; BSN12A Q UICK REFERENCE DATA • Direct interface to C-MO S, TTL, etc. • High-speed switching


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    713iQflSb DQb7735 BSN12 BSN12A MSBC33 VB3073-1 BSN12 BSN12A PDF

    Untitled

    Abstract: No abstract text available
    Text: • Philips Semiconductors bbS3R31 0E37L.3 m 3 ■ APX Product specification AUER PHILIPS/DISCRETE b7E D N-channel enhancement mode vertical D-MOS transistors FEATURES BSN12; BSN12A QUICK R EFER EN CE DATA • Direct interface to C-MOS, TTL, etc. • High-speed switching


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    bbS3R31 0E37L BSN12; BSN12A PDF

    bcw1

    Abstract: BSN12 BSN12A
    Text: •I Philips Semiconductors LiL.S3T31 0DE37ta3 143 ■ N AMER P H I L I P S / D I S C R E T E APX N-channel enhancement mode vertical D-MOS transistors FEATURES Product specification b7E BÇW1, b c m -i o a b &n i z a QUICK REFERENCE DATA • Direct interface to C-MOS, TTL,


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    S3T31 0DE37ta3 BSN12 BSN12A 100mA bcw1 BSN12 BSN12A PDF