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    onsemi BSR57

    JFET N-CH 40V SOT23-3
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    DigiKey BSR57 Reel 12,000 3,000
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    BSR57 Cut Tape 1,656 1
    • 1 $0.52
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    Mouser Electronics BSR57 6,340
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    Onlinecomponents.com BSR57
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    TME BSR57 3,145 5
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    Avnet Asia BSR57 16 Weeks 9,000
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    Avnet Silica BSR57 17 Weeks 3,000
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    Chip1Stop BSR57 Cut Tape 3,087
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    BSR57 2,888
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    EBV Elektronik BSR57 3,000 18 Weeks 3,000
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    Flip Electronics BSR57 5,730
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    New Advantage Corporation BSR57 3,000 1
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    Essentra Components RLCBSR-5-01

    BRD SPT SNAP LOCK NYLON 5/16"
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    DigiKey RLCBSR-5-01 Bulk 3,930 1
    • 1 $0.38
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    Mouser Electronics RLCBSR-5-01 1,896
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    RS RLCBSR-5-01 Bulk 4 Weeks 1,000
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    Bisco Industries RLCBSR-5-01 12
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    Interstate Connecting Components RLCBSR-5-01 37
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    DB Roberts RLCBSR-5-01
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    JRH Electronics MWDM2L-25SCBSR5U-.110

    MICRO D CONNECTOR
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    DigiKey MWDM2L-25SCBSR5U-.110 Bulk 910 1
    • 1 $1492.22
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    JRH Electronics MWDM2L-9SCBSR5U-.140

    MICRO D CONNECTOR
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    DigiKey MWDM2L-9SCBSR5U-.140 Bulk 768 1
    • 1 $1116.12
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    JRH Electronics MWDM3L-31SCBSR5U-.110

    MICRO D CONNECTOR
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    DigiKey MWDM3L-31SCBSR5U-.110 Bulk 205 1
    • 1 $3347.25
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    BSR5 Datasheets (100)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BSR50 Fairchild Semiconductor NPN Darlington Transistor Original PDF
    BSR50 Philips Semiconductors NPN Darlington transistors Original PDF
    BSR50 Philips Semiconductors Small-signal Transistors Original PDF
    BSR50 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BSR50 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BSR50 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BSR50 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BSR50 Unknown Cross Reference Datasheet Scan PDF
    BSR50 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BSR50 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BSR50 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    BSR50 Philips Semiconductors NPN Darlington Transistors Scan PDF
    BSR50_D74Z Fairchild Semiconductor NPN Darlington Transistor; Package: TO-92; No of Pins: 3; Container: Ammo Original PDF
    BSR50_J35Z Fairchild Semiconductor Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN DARL 45V 1.5A TO-92 Original PDF
    BSR51 Philips Semiconductors NPN Darlington transistors Original PDF
    BSR51 Philips Semiconductors Small-signal Transistors Original PDF
    BSR51 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BSR51 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BSR51 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BSR51 Unknown Shortform Transistor PDF Datasheet Short Form PDF

    BSR5 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BSR58

    Abstract: BSR56 BSR57 sot23 marking code
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BSR56; BSR57; BSR58 N-channel FETs Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel FETs BSR56; BSR57; BSR58 DESCRIPTION Symmetrical silicon n-channel


    Original
    PDF BSR56; BSR57; BSR58 MAM385 BSR58 BSR56 BSR57 sot23 marking code

    BSR56

    Abstract: No abstract text available
    Text: BSR56 BSR56 N-Channel Low-Frequency Low-Noise Amplifier 3 • This device is designed for low-power chopper or switching application sourced from process 51 2 SOT-23 Mark: M4 1. Drain 2. Source 3. Gate 1 Absolute Maximum Ratings TC=25°C unless otherwise noted


    Original
    PDF BSR56 OT-23 BSR56

    BSR58

    Abstract: No abstract text available
    Text: BSR58 BSR58 N-Channel Low-Frequency Low-Noise Amplifier 3 • This device is designed for low-power chopper or switching application sourced from process 51 2 SOT-23 Mark: M6 1. Drain 2. Source 3. Gate 1 Absolute Maximum Ratings TC=25°C unless otherwise noted


    Original
    PDF BSR58 OT-23 BSR58

    application note jfet J111 transistor

    Abstract: BSR58LT1G M6 BSR58LT1G BSR58LT1 J111 J112 J113 m6 marking transistor sot-23 transistor J111 marking j112
    Text: BSR58LT1 JFET Chopper Transistor N−Channel − Depletion Features • Pb−Free Package is Available http://onsemi.com MAXIMUM RATINGS Rating 2 SOURCE Symbol Value Unit Drain −Gate Voltage VDG −40 Vdc Gate −Source Voltage VGS −35 Vdc Gate Current


    Original
    PDF BSR58LT1 BSR58LT1/D application note jfet J111 transistor BSR58LT1G M6 BSR58LT1G BSR58LT1 J111 J112 J113 m6 marking transistor sot-23 transistor J111 marking j112

    npn, transistor, sc 107 b

    Abstract: BSR52 BSR62 SC-43A
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BSR52 NPN Darlington transistor Product specification Supersedes data of 1999 Apr 26 2004 Nov 11 Philips Semiconductors Product specification NPN Darlington transistor BSR52 FEATURES PINNING • High current max. 1 A


    Original
    PDF M3D186 BSR52 BSR62. MAM307 SCA76 R75/04/pp7 npn, transistor, sc 107 b BSR52 BSR62 SC-43A

    Untitled

    Abstract: No abstract text available
    Text: dV.s.iv ^£,mi-C.ondu.d.oi Lpioducki, One. TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212)227-6005 FAX: (973) 376-8960 BSR52 NPN Darlington transistor FEATURES • High current (max. 1 A) • Low voltage (max. 80 V) • Integrated diode and resistor.


    Original
    PDF BSR52 100MHz O-237

    BSR57

    Abstract: No abstract text available
    Text: BSR57 BSR57 N-Channel Low-Frequency Low-Noise Amplifier 3 • This device is designed for low-power chopper or switching application sourced from process 51 2 SOT-23 1 Mark: M5 1. Drain 2. Source 3. Gate Absolute Maximum Ratings TC=25°C unless otherwise noted


    Original
    PDF BSR57 OT-23 BSR57

    MARK M6

    Abstract: BSR58
    Text: BSR58 BSR58 N-Channel Low-Frequency Low-Noise Amplifier 3 • This device is designed for low-power chopper or switching application sourced from process 51 2 SOT-23 Mark: M6 1. Drain 2. Source 3. Gate 1 Absolute Maximum Ratings TC=25°C unless otherwise noted


    Original
    PDF BSR58 OT-23 MARK M6 BSR58

    BSR56

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BSR56; BSR57; BSR58 N-channel FETs Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel FETs BSR56; BSR57; BSR58 DESCRIPTION Symmetrical silicon n-channel


    Original
    PDF BSR56; BSR57; BSR58 MAM385 BSR56

    application note jfet J111 transistor

    Abstract: jfet J111 transistor transistor J111 BSR58LT1 transistor j113 j113 equivalent J111 J112 J113 CODE m6
    Text: BSR58LT1 JFET Chopper Transistor N–Channel – Depletion MAXIMUM RATINGS Rating http://onsemi.com Symbol Value Unit Drain–Gate Voltage VDG –40 Vdc Gate–Source Voltage VGS –35 Vdc Gate Current IG 50 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C


    Original
    PDF BSR58LT1 r14525 BSR58LT1/D application note jfet J111 transistor jfet J111 transistor transistor J111 BSR58LT1 transistor j113 j113 equivalent J111 J112 J113 CODE m6

    BSR56

    Abstract: No abstract text available
    Text: BSR56 BSR56 N-Channel Low-Frequency Low-Noise Amplifier 3 • This device is designed for low-power chopper or switching application sourced from process 51 2 SOT-23 Mark: M4 1. Drain 2. Source 3. Gate 1 Absolute Maximum Ratings TC=25°C unless otherwise noted


    Original
    PDF BSR56 OT-23 BSR56

    Untitled

    Abstract: No abstract text available
    Text: BSR50 BSR50 NPN Darlington Transistor • This device designed for applications requiring extremely high gain at collector currents to 0.5A. • Sourced from Process 06. TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TA=25°C unless otherwise noted


    Original
    PDF BSR50

    npn, transistor, sc 107 b

    Abstract: BSR52 BSR62 SC-43A NXP BSR52 transistor bsr52
    Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D186 BSR52 NPN Darlington transistor Product data sheet Supersedes data of 1999 Apr 26 2004 Nov 11 NXP Semiconductors Product data sheet NPN Darlington transistor BSR52 FEATURES PINNING • High current max. 1 A


    Original
    PDF M3D186 BSR52 BSR62. MAM307 R75/04/pp7 npn, transistor, sc 107 b BSR52 BSR62 SC-43A NXP BSR52 transistor bsr52

    npn, transistor, sc 107 b

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BSR52 NPN Darlington transistor Product specification Supersedes data of 1997 May 12 1999 Apr 26 Philips Semiconductors Product specification NPN Darlington transistor BSR52 FEATURES PINNING • High current max. 1 A


    Original
    PDF M3D186 BSR52 BSR62. MAM307 SCA63 115002/00/03/pp8 npn, transistor, sc 107 b

    BSR56

    Abstract: BSR57 BSR58
    Text: BSR56 BSR57 BSR58 TllDflSb OObTSbS TT5 « P H I N J V . N -C H A N N E L FETS S ym m etrical silicon n-channel d e p le tio n ty p e ju n c tio n fie ld -e ffe c t transistors in a plastic m icro m in ia tu re envelope intended fo r a p p lica tio n in th ic k and th in -film circu its. The transistors are intended fo r low power, chopper or sw itch in g applications in industrial service.


    OCR Scan
    PDF BSR56 BSR57 BSR58 bsr56 bsr57 bsr58Vqsm BSR56; BSR58

    marking wh sot-23

    Abstract: BSR56 BSR56L BSR57 BSR57L BSR58 BSR58L BSR67 DIODES MARKING M5
    Text: M O T O R O L A SC XSTRS/R F 12E 0 | b3 t ? a S M O G a t t a ? 4 | M A X IM U M RATINGS Rating BSR56L' Symbol Value U nit Drain-Source Voltage —VDS 40 V Drain-Gate Voltage V dg 40 V thru Gate-Source Voltage Vg s 40 V Forward Gate Current 'G f 50 mA BSR58L


    OCR Scan
    PDF BSR56L' BSR58L OT-23 O-236AB) BSR56L BSR67L BSR58L BSR56; marking wh sot-23 BSR56 BSR57 BSR57L BSR58 BSR67 DIODES MARKING M5

    BSR50

    Abstract: bsr51 BSR52 BSR60 BSR61 BSR62
    Text: N AMER P H I L I P S / D I S C R E T E bTE T> • b b i a ^ l D027Ô41 022 ■ APX BSR50 to 52 Jl N-P-N DARLINGTON TRANSISTORS S ilicon planar transistors in plastic T O -9 2 envelopes, intended fo r industrial switching applications e.g. p rin t ham m er, solenoid, relay and lamp driving.


    OCR Scan
    PDF bb53131 BSR50 BSR60, BSR61 BSR62. BSR51 BSR52 BSR52 BSR60 BSR62

    BSR56

    Abstract: No abstract text available
    Text: BSR56 BSR57 BSR58 ? 1 1 0 ß S b Q Q b T S b S TTS « P H I N 7 V N-CHANNEL FETS Symmetrical silicon n-channel depletion type junction field-effect transistors in a plastic m icrom iniature envelope intended for application in thick and th in -film circuits. The transistors are intended fo r lowpower, chopper or switching applications in industrial service.


    OCR Scan
    PDF BSR56 BSR57 BSR58 BSR56; BSR57; BSR58; BSR56

    BSR56

    Abstract: BSR57 BSR58
    Text: BSR56 BSR57 BSR58 TllDflSb O O b T S b S TT5 • PHIN N -C H A N N E L FETS S ym m etrical silicon n-channel d e p le tio n ty p e ju n c tio n fie ld -e ffe c t transistors in a plastic m icro m in ia tu re envelope intended fo r a p p lica tio n in th ic k and th in -film circu its. The transistors are intended fo r low power, chopper or sw itch in g applications in industrial service.


    OCR Scan
    PDF BSR56 BSR57 BSR58 711002b BSR58

    transistor K 2333

    Abstract: tr 1007 transistor
    Text: DISCRETE SEMICONDUCTORS BSR52 NPN Darlington transistor 1999 Apr 26 Product specification Supersedes data of 1997 May 12 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification NPN Darlington transistor BSR52 FEATURES PINNING • High current max. 1 A


    OCR Scan
    PDF BSR52 BSR52 BSR62. 115002/00/03/pp8 transistor K 2333 tr 1007 transistor

    BSR52

    Abstract: BSR61 BSR50 BSR51 BSR60 BSR62
    Text: BSR50 to 52 J P HILIPS I N T E R N A T I O N A L SbE D • 7 1 1 00 2 b 0 0 4 E 3 2 b j?Sb M P H I N N-P-N DARLINGTON TRANSISTORS Silicon planar transistors in plastic TO-92 envelopes, intended for industrial switching applications e.g. print hammer, solenoid, relay and lamp driving.


    OCR Scan
    PDF BSR50 711002b 004232b BSR60, BSR61 BSR62. BSR51 BSR52 BSR60 BSR62

    Untitled

    Abstract: No abstract text available
    Text: Pro Electron Series Discrete POWER & Signal Technologies National Semiconductor BVgss Device No. Case Style BF244A BF244B BF244C BF245A TO-92 TO-92 TO-92 TO-92 30 30 30 30 1 1 1 BF245B BF245C B F 256A BF256B TO-92 TO-92 TO-92 TO-92 2-80 BF256C TO-92 BSR56 TO-236


    OCR Scan
    PDF BF244A BF244B BF244C BF245A BF245B BF245C BF256B BF256C BSR56 O-236

    BSR57L

    Abstract: No abstract text available
    Text: MOTOROLA SC XSTRS/R F 12E D | b3t.7aS4 aOôtbû? 4 | X'ZS' M A X IM U M RATINGS Rating BSR56L' Symbol Value U nit Drain-Source Voltage ^ V ds 40 V Drain-Gate Voltage Vdg 40 V thru Gate-Source Voltage Vg s 40 V Forward Gate Current 'G f 50 mA BSR58L CASE 318-03, STYLE 10


    OCR Scan
    PDF BSR56L' BSR58L OT-23 O-236AB) BSR58L BSR56L BSR57L

    BSR61

    Abstract: BSR51 bsr60 transistor bsr60 BSR50 BSR52 BSR62 2905 transistor CB050
    Text: I43X& Tq-1. BSR60 to 62 J \_ P-N-P DARLINGTON TRANSISTORS Silicon planar transistors in plastic TO-92 envelopes, intended for industrial applications e.g. print hammer, solenoid, relay and lamp driving. N-P-N complements are the BSR50, BSR51 and BSR52.


    OCR Scan
    PDF BSR60 BSR50, BSR51 BSR52. BSR61 BSR62 transistor bsr60 BSR50 BSR52 BSR62 2905 transistor CB050