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    Infineon Technologies AG BSS119NH6327XTSA1

    MOSFET N-CH 100V 190MA SOT23-3
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    DigiKey BSS119NH6327XTSA1 Cut Tape 13,592 1
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    BSS119NH6327XTSA1 Digi-Reel 13,592 1
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    BSS119NH6327XTSA1 Reel 12,000 3,000
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    Avnet Americas BSS119NH6327XTSA1 Ammo Pack 16 Weeks, 3 Days 1
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    Mouser Electronics BSS119NH6327XTSA1 72,211
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    Verical BSS119NH6327XTSA1 42,000 3,000
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    BSS119NH6327XTSA1 27,000 9,000
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    BSS119NH6327XTSA1 26,126 202
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    BSS119NH6327XTSA1 Cut Strips 658 14 Weeks 1
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    Newark BSS119NH6327XTSA1 Cut Tape 3,155 1
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    BSS119NH6327XTSA1 Reel 9,000
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    RS BSS119NH6327XTSA1 Bulk 250 2 Weeks 1
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    Rochester Electronics BSS119NH6327XTSA1 3,000 1
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    TME BSS119NH6327XTSA1 6,004 1
    • 1 $0.333
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    Chip 1 Exchange BSS119NH6327XTSA1 114,658
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    Chip One Stop BSS119NH6327XTSA1 Cut Tape 26,126
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    Chip-Germany GmbH BSS119NH6327XTSA1 Tape 355
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    EBV Elektronik BSS119NH6327XTSA1 15 Weeks 3,000
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    Win Source Electronics BSS119NH6327XTSA1 3,001
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    Essentra Components CBSS115A

    SELF RETAINING SPACER, .234 IN T
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    DigiKey CBSS115A Bag 1,940 1
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    Essentra Components CBSS110A

    SELF RETAINING SPACER, .234 IN T
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    DigiKey CBSS110A Bag 408 1
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    Mouser Electronics CBSS110A
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    RS CBSS110A Bulk 9 Weeks 1,000
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    CAIG Laboratories Inc B-SS116

    BRUSH SINGLE HEAD NYLON 1PCS
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    DigiKey B-SS116 Bulk 5 1
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    Newark B-SS116 Bulk 1
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    Techni-Tool, Inc. B-SS116
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    onsemi BSS110

    MOSFET P-CH 50V 170MA TO92-3
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    DigiKey BSS110 Bulk 2,000
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    BSS11 Datasheets (45)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BSS11 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BSS11 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BSS11 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BSS11 Unknown Transistor Replacements Scan PDF
    BSS110 Fairchild Semiconductor TRANS MOSFET P-CH 50V 0.17A 3TO-92 Original PDF
    BSS110 Fairchild Semiconductor P-Channel Enhancement Mode Field Effect Transistor Original PDF
    BSS110 Fairchild Semiconductor P-Channel Enhancement Mode Field Effect Transistor Original PDF
    BSS110 Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor Original PDF
    BSS110 Siemens Original PDF
    BSS110 Siemens SIPMOS Small-Signal Transistor Original PDF
    BSS110 Siemens SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level) Original PDF
    BSS110 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    BSS110 Fairchild Semiconductor P -Channel Enhancement Mode Field Effect Transistor Scan PDF
    BSS110 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BSS110 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BSS110 Unknown FET Data Book Scan PDF
    BSS110 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BSS110 National Semiconductor P-Channel Enhancement Mode Field Effect Transistor Scan PDF
    BSS110 Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor Scan PDF
    BSS110E6288 Infineon Technologies Transistor Mosfet P-CH 50V 0.17A 3TO-92 T/R Original PDF

    BSS11 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BSS119

    Abstract: E6327 Q67000-S007 infineon bss119 ID013
    Text: BSS119 Rev. 1.0 SIPMOS Small-Signal-Transistor Feature Product Summary • N-Channel VDS • Enhancement mode RDS on • Logic Level ID • dv/dt rated 100 V 6 Ω 0.17 A SOT23 3 Drain pin 3 Gate pin1 2 Source pin 2 1 VPS05161 Type Package Ordering Code


    Original     		BSS119 VPS05161 Q67000-S007 E6327: BSS119 E6327 Q67000-S007 infineon bss119 ID013 PDF

    BSS119

    Abstract: L6327 PG-SOT23
    Text: BSS119 Rev. 1.3 SIPMOS Small-Signal-Transistor Feature Product Summary • N-Channel VDS • Enhancement mode RDS on • Logic Level ID • dv/dt rated 100 V 6 Ω 0.17 A PG-SOT23 3 Drain pin 3 Gate pin1 2 Source pin 2 1 VPS05161 Type Package Pb-free Tape and Reel Information


    Original     		BSS119 PG-SOT23 VPS05161 L6327: BSS119 L6327 PG-SOT23 PDF

    Untitled

    Abstract: No abstract text available
    Text: BSS119 Rev. 1.1 SIPMOS Small-Signal-Transistor Feature Product Summary • N-Channel VDS • Enhancement mode RDS on • Logic Level ID • dv/dt rated 100 V 6 Ω 0.17 A PG-SOT23 3 Drain pin 3 Gate pin1 2 Source pin 2 1 VPS05161 Type Package Ordering Code


    Original     		BSS119 PG-SOT23 VPS05161 Q67000-S007 E6327: PDF

    Untitled

    Abstract: No abstract text available
    Text: BSS110 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)50 V(BR)GSS (V)20 I(D) Max. (A)170m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)680m @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)630m Minimum Operating Temp (øC)-55


    Original     		BSS110 PDF

    BSS110

    Abstract: BSS84
    Text: May 1999 BSS84 / BSS110 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		BSS84 BSS110 BSS84: BSS110: BSS110 PDF

    Untitled

    Abstract: No abstract text available
    Text: BSS11 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V) I(C) Max. (A) Absolute Max. Power Diss. (W)1.2 Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)


    Original     		BSS11 Freq500M PDF

    PG-SOT-23

    Abstract: No abstract text available
    Text: BSS119 Rev. 1.5 SIPMOS Small-Signal-Transistor Feature Product Summary • N-Channel VDS • Enhancement mode RDS on • Logic Level ID • dv/dt rated 100 V 6 Ω 0.17 A PG-SOT23 3 Drain pin 3 • Qualified according to AEC Q101 Gate pin1 2 Source pin 2


    Original     		BSS119 PG-SOT23 VPS05161 BSS119 PG-SOT23 L6433: L6327: PG-SOT-23 PDF

    PG-SOT23

    Abstract: No abstract text available
    Text: BSS119N OptiMOS Small-Signal-Transistor Product Summary Features VDS • N-channel RDS on ,max • Enhancement mode • Logic level (4.5V rated) 100 V VGS=10 V 6 W VGS=4.5 V 10 ID 0.19 A • Avalanche rated • Qualified according to AEC Q101 PG-SOT23 • 100% lead-free; RoHS compliant; Halogen free


    Original     		BSS119N PG-SOT23 H6327: PG-SOT23 PDF

    BSS110

    Abstract: BSS84 CBVK741B019 F63TNR PN2222N
    Text: May 1999 BSS84 / BSS110 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		BSS84 BSS110 BSS84: BSS110: BSS110 CBVK741B019 F63TNR PN2222N PDF

    BSS110

    Abstract: BSS84
    Text: May 2000 BSS84 / BSS110 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		BSS84 BSS110 BSS84: BSS110: BSS110 PDF

    BSS110

    Abstract: CGY20
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BSS110 P-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors 1995 Apr 07 Philips Semiconductors Product specification P-channel enhancement mode


    Original     		BSS110 MAM144 CGY2020G SCA50 647021/1200/01/pp12 BSS110 CGY20 PDF

    BSS119N

    Abstract: No abstract text available
    Text: BSS119N OptiMOS Small-Signal-Transistor Product Summary Features VDS • N-channel RDS on ,max • Enhancement mode • Logic level (4.5V rated) 100 V VGS=10 V 6 W VGS=4.5 V 10 ID 0.19 A • Avalanche rated • Qualified according to AEC Q101 PG-SOT23 • 100% lead-free; RoHS compliant; Halogen free


    Original     		BSS119N PG-SOT23 H6327: BSS119N PDF

    Untitled

    Abstract: No abstract text available
    Text: BSS119 Rev. 1.2 SIPMOS Small-Signal-Transistor Feature Product Summary • N-Channel VDS • Enhancement mode RDS on • Logic Level ID • dv/dt rated 100 V 6 Ω 0.17 A PG-SOT23 3 Drain pin 3 Gate pin1 2 Source pin 2 1 VPS05161 Type Package Ordering Code


    Original     		BSS119 PG-SOT23 VPS05161 Q67000-S007 L6327: PDF

    Untitled

    Abstract: No abstract text available
    Text: BSS119 Rev. 1.4 SIPMOS Small-Signal-Transistor Feature Product Summary • N-Channel VDS • Enhancement mode RDS on • Logic Level ID • dv/dt rated 100 V 6 Ω 0.17 A PG-SOT23 3 Drain pin 3 Gate pin1 2 Source pin 2 1 VPS05161 Type Package Pb-free Tape and Reel Information


    Original     		BSS119 PG-SOT23 VPS05161 L6433: L6327: PDF

    Untitled

    Abstract: No abstract text available
    Text: BSS119 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)14 I(D) Max. (A)170m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)680m @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)360m Minimum Operating Temp (øC)-55


    Original     		BSS119 PDF

    DS2505

    Abstract: 007H DS2505P DS2505T DS2505V 2n7000 equivalent
    Text: DS2505 DS2505 16K bit Add–Only Memory FEATURES • 16384 bits Electrically Programmable Read Only Memory EPROM communicates with the economy of one signal plus ground • Unique, factory–lasered and tested 64–bit registration number (8–bit family code + 48–bit serial number


    Original     		DS2505 DS2505 007H DS2505P DS2505T DS2505V 2n7000 equivalent PDF

    Untitled

    Abstract: No abstract text available
    Text: Common mode SS Coils SS11VL Type [RoHS [RoHS Compliant] Compliant] <Features> ･ Super low profile : 20.5mm max. 19.5±1mm ･ High permeability core realizes high inductance (SS11VL-R type) ･ Best suites for internal power supply of compact adaptor and other thin - cased devices.


    Original     		SS11VL SS11VL-R SS11VL-03550 SS11VL-04350 SS11VL-05230 SS11VL-06180 SS11VL-07120 SS11VL-08083 SS11VL-10062 SS11VL-11050 PDF

    Untitled

    Abstract: No abstract text available
    Text: Common mode SS Coils SS11V/H-CH Type [RoHS [RoHS Compliant] Compliant] Rated current AC A 0.3 0.4 0.5 0.6 0.7 0.8 1.0 1.1 1.3 1.7 2.2 3.0 0.3 0.4 0.5 0.6 0.7 0.8 1.0 1.1 1.3 1.7 2.2 3.0 Model SS11V/H-03550-CH SS11V/H-04350-CH SS11V/H-05230-CH SS11V/H-06180-CH


    Original     		SS11V/H-CH SS11V/H-03550-CH SS11V/H-04350-CH SS11V/H-05230-CH SS11V/H-06180-CH SS11V/H-07120-CH SS11V/H-08083-CH SS11V/H-10062-CH SS11V/H-11050-CH SS11V/H-13035-CH PDF

    BSS84

    Abstract: BSS110
    Text: FAIRCHILD M ay 1999 MICDNDUCTÜR i BSS84 / BSS110 P -Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancem ent mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    OCR Scan     		BSS84 BSS110 BSS84: BSS110: BSS110. BSS110 PDF

    marking BSs mosfet

    Abstract: Q62702-S631
    Text: BSS119 SIPMOS N Channel MOSFET • SIPMOS - enhancement mode • Drain-source voltage Vfc» = 100V • Continuous drain current / D = 0.17A • Drain-source on-resistance • Total power dissipation /%>•<«> = 6.00 P0 = 0.36W Type Marking Ordering code for


    OCR Scan     		BSS119 Q62702-S631 marking BSs mosfet Q62702-S631 PDF

    Untitled

    Abstract: No abstract text available
    Text: F /M R C H II-D May 1999 M ICONDUCTQR i BSS84 / BSS110 P -Channel Enhancement Mode Field Effect Transistor Features General Description These P-Channel enhancem ent mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    OCR Scan     		BSS84 BSS110 BSS84: BSS110: BSS110. PDF

    bss110

    Abstract: 017adc bss84
    Text: PAIRCHII-D June 1995 M ICDNDUCTQ R tm BSS84/ BSS110 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    OCR Scan     		BSS84/ BSS110 BSS84: BSS110: BSS84 017adc PDF

    BSS84

    Abstract: ROB SOT23 BSS110
    Text: National Semiconductor~ June 1995 BSS84 / BSS110 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    OCR Scan     		BSS84 BSS110 BSS84: BSS110: b501130 0Q401fl3 ROB SOT23 BSS110 PDF

    TRANSISTOR D 570

    Abstract: BSS110 INFINEON BSS110 B34 transistor
    Text: Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor BSS110 FEATURES • Low threshold voltage • Direct interface to C-MOS, TTL, etc. • High speed switching • No secondary breakdown. APPLICATIONS • Intended for use as a Line current interruptor in


    OCR Scan     		BSS110 nat25Â 7110fl2b 0CH3015 TRANSISTOR D 570 BSS110 INFINEON BSS110 B34 transistor PDF