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    BSS91 TRANSISTOR Search Results

    BSS91 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    BSS91 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TRANSISTOR DATASHEET D1555

    Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
    Text: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440


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    2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 TRANSISTOR DATASHEET D1555 d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878 PDF

    Untitled

    Abstract: No abstract text available
    Text: BSS91 N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a TO-18 envelope. Designed primarily as a line current interrupter in telephone sets, it can also be applied in other applications such as in relays,


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    BSS91 bb53331 PDF

    BSS91

    Abstract: bss91 transistor
    Text: BSS91 _ N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a TO-18 envelope. Designed primarily as a line current interrupter in telephone sets, it can also be applied in other applications such as in relays,


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    BSS91 ID-400 BSS91 bss91 transistor PDF

    TRANSISTOR A1t

    Abstract: BTS333 A1T TRANSISTOR BSS91 bss91 transistor
    Text: BSS91 A_ N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a TO-18 envelope. Designed prim arily as a line current interrupter in telephone sets, it can also be applied in other applications such as in relays,


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    BSS91 bbS3T31 D03L1P0 TRANSISTOR A1t BTS333 A1T TRANSISTOR BSS91 bss91 transistor PDF

    BSS91

    Abstract: to-18 dimensions
    Text: 7110ß2Li D[]b7fi7ö Sil IPHIN BSS91 N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancem ent m ode vertical D-MOS tran sisto r in a T O -18 envelope. Designed p rim a rily as a line c u rre n t in te rru p te r in telephone sets, it can also be applied in o th e r applica tio ns such as in relays,


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    BSS91 BSS91 to-18 dimensions PDF

    BSS91

    Abstract: transistor ti p80 sik02232 sik02239 as3st
    Text: SIEMENS SIPMOS Small-Signal Transistor Vds ¡o = 240 V = 0 .3 5 A ^D S on = 6.0 Q • • • BSS 91 N channel Enhancem ent mode Package: TO -18 1> Not for new Type I BSS 91 design! Ordering code for version in bulk Q 62702-S457 Maxim um Ratings Parameter


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    62702-S457 S53StDS SIK02239 00S42b3 BSS91 transistor ti p80 sik02232 sik02239 as3st PDF

    S498

    Abstract: BSS97 BSS95 BSS125 siemens 230 92 BSS 130 BSS 97 s484 S458 BSS components
    Text: <IENENS AKTIEN6ESELLSCHAF 03E D • 023SbOS 001Sb37 4 BISIE6 T^£7~2S' Kleinsignaltransistoren Small-Signal Transistors N-Kanal Anreicherungstypen N channel enhancem ent types K S max) V ti(max) rriA ft P,ot mW G ehäuse P ackage SBS SCS Bestellnummer Ordering co d e


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    023SbOS lSb37 Q62702- BSS981' BSS1381Â OT-23 BSS3951Â O-202 BSS100 BSS123 S498 BSS97 BSS95 BSS125 siemens 230 92 BSS 130 BSS 97 s484 S458 BSS components PDF

    BF247A

    Abstract: bs250 bs170 PMBFJ111 PMBFJ174 BSR56 BFT46 PHC21025 BF909WR
    Text: Philips Semiconductors Small-signal Field-effect Transistors Index ALPHANUMERIC INDEX Types added to the range since the last issue of Handbook SC07 1994 issue are shown in bold print. TYPE NUMBER PAGE TYPE NUMBER PAGE TYPE NUMBER PAGE 150 BS170 347 150


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    BS170 BS208 BF904 BF904R BF904WR BS250 BC264D BF908 BSD12 BF245A BF247A bs250 bs170 PMBFJ111 PMBFJ174 BSR56 BFT46 PHC21025 BF909WR PDF

    BST78

    Abstract: bsn204 bsn254 BSN20 to92 BSD254 sot89 15e
    Text: Philips Semiconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal FETs N-CHANNEL VERTICAL D-MOSFETS ratings type number typ. mS typ. (PF) c rs typ. (PF) package (Í2) characteristics t 3> ton2> typ. typ.


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    15000s BST86 PMBF107 PMBF170 2N7002 BST78 bsn204 bsn254 BSN20 to92 BSD254 sot89 15e PDF

    philips bsd215

    Abstract: BST110 BF909WR
    Text: Philips Semiconductors Selection guide Small-signal Field-effect Transistors N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS CHARACTERISTICS TYPE NUMBER ± V Ds PACKAGE V Id Ig (mA) ly ts l ss “ V (P )G S min - max (mA) min. (mS) (V ) C r, PAGE (PF) Hi-fi amplifiers and AF equipment


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    BC264A BC264B BC264C BC264D BF245A BST120 BST122 PHP112 PHP125 PHC2102501 philips bsd215 BST110 BF909WR PDF

    FET BFW10

    Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
    Text: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI


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    BA220 BA221 BA223 BA281 BA314 BA315 BA316 BA317 BA318 BA423 FET BFW10 KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11 PDF

    BGY41

    Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
    Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.


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    LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc PDF

    transistor f6 13003

    Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
    Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.


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    SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350 PDF

    IRF 544 N MOSFET

    Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
    Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no


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