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    Infineon Technologies AG BTS333B9602AA

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    Bristol Electronics BTS333B9602AA 1,000
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    Infineon Technologies AG BTS333

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    Bristol Electronics BTS333 25
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    Others BTS 333-3I

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    Chip 1 Exchange BTS 333-3I 34
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    BTS333 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BTS333 Infineon Technologies Smart Lowside Power Switch Original PDF
    BTS 333 Infineon Technologies FET, Smart Lowside Power Switch Original PDF

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    BTS333

    Abstract: mosfet modern applications SPB160N04S2-03 FULLY PROTECTED MOSFET paralleling mosfet transistor mosfet
    Text: BTS333 – The Perfect Choice for Reliable Linear Control Power Modern metal oxide semiconductor field-effect transistor MOSFET technologies are RDS(on)-optimized to support higher currents with less power dissipation. However, Key Features: this leads to higher thermal instability.


    Original     		BTS333 BTS333 SPB160N04S2-03 com/designlink/32208 mosfet modern applications FULLY PROTECTED MOSFET paralleling mosfet transistor mosfet PDF

    BTS333

    Abstract: BTS 333
    Text: HITFETBTS 333 Smart Lowside Power Switch Features Product Summary • Logic Level Input • Input Protection ESD • Temperature limitation adjustable by input voltage • Overload protection Drain source voltage VDS 42 V On-state resistance RDS(on) 18


    Original     		Nov-03-2000 BTS333 BTS 333 PDF