BSV52 Search Results

BSV52

Abstract: HIGH SPEED SWITCHING NPN SOT23
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BSV52 NPN switching transistor Product specification Supersedes data of 1999 Apr 15 2004 Jan 14 Philips Semiconductors Product specification NPN switching transistor BSV52 FEATURES PINNING • Low current max. 100 mA

Contextual Info: Transistors IC SMD Type Product specification BSV52 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 Low voltage max. 12 V . +0.1 1.3-0.1 +0.1 2.4-0.1 High current (max. 100 mA). 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1

kn sot23

Abstract: sot-23 Marking KN BSV52 A12 marking CTC ef 125 33 m8 SOT23 transistor EH sot-23 marking code transistors BSV52 marking code 25X SOT23 C5 MARKING TRANSISTOR
Contextual Info: * FERRANTI semiconductors BSV52 NPN Silicon Planar High Speed Switching Transistor D E S C R IP TIO N This d evice is in te n d ed s p e c ific a lly fo r use in high speed, lo w c u rre n t s w itc h in g a p p lica tio n s. Encapsulated in th e p o p u la r S O T -2 3 package th ese devices

Contextual Info: BSV52 SOT23 IMPIM SILICON PLANAR HIGH SPEED SWITCHING TRANSISTOR PARTMARKING DETAILS: BSV52 - B2 BSV52R - B4 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage v CBO o m O < V CES CO LU o >

Contextual Info: DISCRETE SEMICONDUCTORS BITÂ S y i I T BSV52 NPN switching transistor Product specification Supersedes data of 1997 May 07 Philips Sem iconductors 1999 Apr 15 PHILIPS Philips Semiconductors Product specification NPN switching transistor BSV52 FEATURES PINNING

BSV52

Abstract: 2369A SO2369 SO2369A SOT23 BSV52 n11 sot 65 so2369 n11 807g ic ua 413
Contextual Info: BSV52 SO2369/SO2369A SMALL SIGNAL NPN TRANSISTORS • ■ ■ Type Marking BSV52 B2 SO2369 N11 SO 2369A N81 SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS LOW CURRENT, FAST SWITCHING APPLICATIONS.

Contextual Info: BSV52LT1G Switching Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Symbol Value Unit Collector −Emitter Voltage VCEO 12 Vdc Collector −Base Voltage

Contextual Info: BSV52 BSV52 C E SOT-23 B Mark: B2 NPN Switching Transistor This device is designed for high speed saturated switching at collector currents of 10 mA to 100 mA. Sourced from Process 21. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter

smd transistor b2

Abstract: BSV52 SMD transistor MARKING 14
Contextual Info: Transistors IC SMD Type NPN Switching Transistor BSV52 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 Low voltage max. 12 V . +0.1 1.3-0.1 +0.1 2.4-0.1 High current (max. 100 mA). 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1

transistor BF 697

Abstract: BSV52 BF 273 transistor
Contextual Info: > <0 ID . Di scret e POW ER & Sig n a l Technologies National Semiconductor" BSV52 Mark: B2 NPN Switching Transistor This device is designed for high speed saturation switching at collector currents of 10 m A to 100 mA. Sourced from Process 21. Absolute Maximum Ratings*

Contextual Info: BSV52 P AR T O BSO LETE HIGH SPEED SWITCHING TRANSISTOR P AR TM AR KIN G DETAILS: BSV52 - B2 BSV52R - B4 ABSOLUTE M A X IM U M RATINGS PARAMETER C ollector-B ase V oltag e C olle cto r-E m itte r V oltag e SYM BO L VALUE UNIT V CBO 20 V V CES 20 V C olle cto r-E m itte r V oltag e

Contextual Info: ON Semiconductort Switching Transistor BSV52LT1 NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 12 Vdc Collector −Base Voltage VCBO 20 Vdc IC 100 mAdc Collector Current — Continuous 3 1 2 THERMAL CHARACTERISTICS Characteristic

B558

Abstract: B55123 BSS84A ZVN3310F ZVN4206E BSS66 BSS67 BSS79B BSS79C FMMT2222
Contextual Info: SOT-23 TRANSISTORS & DIODES SWITCHING TRANSISTORS NPN V cbo Volts Type BSS79B 75 75 B SS79C FMM T2222A 75 FMMT4400 60 60 FMMT4401 60 BSS66 BSS67 60 60 FMMT3903 FMMT3904 60 60 FMMT2222 40 FMMT4123 FMM T4124 30 FMMT2369A 40 40 FMMT2369 BSV52 20 VcEO Volts

marking code transistors BSV52

Abstract: BP317 BSV52 HIGH SPEED SWITCHING NPN SOT23
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BSV52 NPN switching transistor Product specification Supersedes data of 1997 May 07 1999 Apr 15 Philips Semiconductors Product specification NPN switching transistor BSV52 FEATURES PINNING • Low current max. 100 mA

BSV52

Abstract: SOT23 BSV52 mark B1 sot23
Contextual Info: BSV52 BSV52 C E SOT-23 B Mark: B2 NPN Switching Transistor This device is designed for high speed saturated switching at collector currents of 10 mA to 100 mA. Sourced from Process 21. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Transistor BSV52LT1 COLLECTOR 3 NPN Silicon 1 BASE 2 EMITTER 3 1 2 CASE 318 – 08, STYLE 6 SOT– 23 TO – 236AB MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 12 Vdc Collector – Base Voltage

bsv52

Contextual Info: f Z T SG S-TH O M SO N ^ 7# lüülDSœiiiiSTrœiülOigl BSV52 S02369/S02369A SMALL SIGNAL NPN TRANSISTORS Type Marking BSV52 B2 S02369 N11 S02369A N81 . SILICON EPITAXIAL PLANAR NPN TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING

BSV52

Abstract: BSV52R HIGH SPEED SWITCHING NPN SOT23 DS201
Contextual Info: SOT23 NPN SILICON PLANAR HIGH SPEED SWITCHING TRANSISTOR BSV52 P AR TM AR KIN G DETAILS: B SV52 - B2 B SV 52R - B4 ABSOLUTE M A X IM U M RATINGS PARAMETER VALUE UNIT V CBO 20 V V CES 20 V 12 V SYM BO L C ollector-B ase V oltag e C olle cto r-E m itte r V oltag e

BSV52L

Contextual Info: 1EE D M A X IM U M RATINGS * Value U nit VCEO 12 Vdc VCBO 20 Vdc ic 100 mAdc Symbol Rating Coliector-Emitter Voltage Collector-Base Voltage Collector Current — Continuous h I b3fc.7Z5M 0 0 f l 5 ^ M 5 MOTOROLA SC XSTRS/R BSV52L Characteristic Symbol Max

Contextual Info: M A X IM U M RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VcEO 12 Vdc Collector-Base Voltage VCBO 20 Vdc ic 100 mAdc Collector Current — Continuous BSV52LT1 C A SE 318-07, STYLE 6 SOT-23 TO-236AB T HERM AL CHARACTERISTICS Characteristic Symbol

BSV52LT1

Contextual Info: MOTOROLA Order this document by BSV52LT1/D SEMICONDUCTOR TECHNICAL DATA Switching Transistor BSV52LT1 COLLECTOR 3 NPN Silicon 1 BASE 2 EMITTER 3 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 12 Vdc Collector – Base Voltage

Small Signal MOSFETs

Abstract: FMMT3903 BSS1385 BSS84A BSS66 BSS67 BSS79B BSS79C FMMT2222 FMMT2222A
Contextual Info: SOT-23 TRANSISTORS & DIODES SWITCHING TRANSISTORS NPN V cbo Volts Type BSS79B 75 75 B SS79C FMM T2222A 75 FMMT4400 60 60 FMMT4401 60 BSS66 BSS67 60 60 FMMT3903 FMMT3904 60 60 FMMT2222 40 FMMT4123 FMM T4124 30 FMMT2369A 40 40 FMMT2369 BSV52 20 VcEO Volts

BSV52

Abstract: HIGH SPEED SWITCHING NPN SOT23 switching transistor sot23 marking JR marking rh transistor
Contextual Info: Philips Semiconductors Product specification NPN switching transistor BSV52 FEATURES PINNING • Low current max. 100 mA PIN • Low voltage (max. 12 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • High speed saturated switching applications, especially

Contextual Info: MAXIMUM RATINGS Symbol Value Unit C o lle cto r-E m itte r V o ltage v CEO 12 Vdc Collector-B ase Voltage VCBO 20 Vdc 'c 100 m A dc Rating C o lle ctor C u rrent — C o n tin u o u s BSV52LT1 CASE 318-07, STYLE 6 SOT-23 T0-236AB THERMAL CHARACTERISTICS