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    BSX52A Search Results

    BSX52A Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BSX52A Semelab Bipolar NPN Device in a Hermetically Sealed TO18 Metal Package Original PDF
    BSX52A Micro Electronics Semiconductor Device Data Book Scan PDF
    BSX52A Motorola The European Selection Data Book 1976 Scan PDF
    BSX52A Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BSX52A Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BSX52A Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BSX52A Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BSX52A SGS-Thomson Transistor Datasheet Scan PDF
    BSX52A Thomson-CSF Condensed Data Book 1977 Scan PDF
    BSX52A Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF
    BSX52A Thomson-CSF Signal Transistors and Field Effect Transistors 1976 Scan PDF

    BSX52A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BSX52A

    Abstract: No abstract text available
    Text: BSX52A Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 50V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.2A All Semelab hermetically sealed products


    Original     		BSX52A O206AA) 2-Aug-02 BSX52A PDF

    Untitled

    Abstract: No abstract text available
    Text: BSX52A Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 50V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.2A All Semelab hermetically sealed products


    Original     		BSX52A O206AA) 16-Jul-02 PDF

    584 TRANSISTOR

    Abstract: No abstract text available
    Text: SILICON EPITAXIAL NPN TRANSISTOR BSX52A • Hermetic TO-18 Metal package. • Designed For Low Frequency Amplifiers, and Low Current Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VCBO VCEO


    Original     		BSX52A 200mA 300mW O-206AA) 584 TRANSISTOR PDF

    Untitled

    Abstract: No abstract text available
    Text: BSX52A Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 50V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.2A All Semelab hermetically sealed products


    Original     		BSX52A O206AA) 19-Jun-02 PDF

    BCY651X

    Abstract: 2N6540 SG-333 bsw43a SG333 2N5081 2N2097A BCY65EPDM SE4020 2N2094A
    Text: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 2SC3623K JE9153A 2SC3112A 2SC3295 2SD1582K JE9153B JE9153 JE9153C 2SC3112B MPS3725 ~~:i;525 15 20 25 30 TP4014 2SC3325 BSW42A BSX51A BSX51A BSX51A PN4014 2N4014 25C3393S BSW43A BSW43A BSX52A BSX52A


    Original     		2SC3623K JE9153A 2SC3112A 2SC3295 2SD1582K JE9153B JE9153 JE9153C 2SC3112B MPS3725 BCY651X 2N6540 SG-333 bsw43a SG333 2N5081 2N2097A BCY65EPDM SE4020 2N2094A PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON EPITAXIAL NPN TRANSISTOR BSX52A • Hermetic TO-18 Metal package. • Designed For Low Frequency Amplifiers, and Low Current Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VCBO VCEO


    Original     		BSX52A 200mA 300mW O-206AA) PDF

    Diode 400V 5A

    Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
    Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM


    Original     		2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN PDF

    Untitled

    Abstract: No abstract text available
    Text: Low Level and General Purpose Amplifiers TYPE NO. CASE BSX38 BSX51 BSX51A BSX51B BSX52 N N N N N TO-18 TO-18 TO-18 TO-18 TO-18 345 300 300 300 300 100 200 200 200 200 30 .25 50 60 25 100 75 50 75 180 BSX52A BSX52B BSY41 BSY72 BSY73 N N P N N TO-18 TO-18 TO-18


    OCR Scan     		BSX38 BSX51 BSX51A BSX51B BSX52 BSX52A BSX52B BSY41 BSY72 BSY73 PDF

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


    OCR Scan     		Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29 PDF

    2n7588

    Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
    Text: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.


    OCR Scan     		PDF

    BSW21A

    Abstract: 2n2222 npn BSW22A BC107 BCY65E BC17 BC178 BSX51A BSX52A BCY58
    Text: Small Signal M etal TO-18 METAL TRANSISTORS NPN TYPES G E N E R A L PURPOSE SW ITCH A N D A M P L IF IE R v CEO V C E R (+ ) (V q q ) I q max. (m A ) H pE min. @ NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN 45 20 32 45 60 25 50 60 25 50 60 100 100 200 200


    OCR Scan     		BC107 BC108AB BCY58 BCY59 BCY65E BSX51 BSX51A BSX51B BSX52 BSX52A BSW21A 2n2222 npn BSW22A BC17 BC178 PDF

    BSY73

    Abstract: BSY89 BFY39 BSY41 BFX93 BFY76 BFY77 BSW19 BSW19A BSW20
    Text: T YPE NO. P O L A R IT Y Low Level and General Purpose Amplifiers Pd mW 'c Im A I V C EO (V ) FE V C E (S A T ) min max •c Im A I V CE (V ) 0.01 0.01 5 5 BFX93 BFX93 N N TO-18 TO-18 300 300 30 30 45 45 40 100 120 300 BFY39 BFY76 BFY77 N N N TO-18 TO-18


    OCR Scan     		BFX93 BFY39 BFY76 BFY77 BSW19 BSW19A BSW20 O-92F BSW20A BSY73 BSY89 BSY41 PDF

    Tr431

    Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
    Text: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200


    OCR Scan     		25T12 Z1012 Z1014 Z1018 AA138 AA140 AA142 AA200 AA21Q AA300 Tr431 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76 PDF

    2SA532

    Abstract: BC109 BC184 BC549 BC317 2SC734 Y MS181A BC159 8 2SC876 TTP31A ML78M06A BC357
    Text: ALPHANUMERIC INDEX TYPE NO. 057-2G 1611G 1620G 1621-2G 1623G 1641G 1N4001 1N4002 1N40Û3 1N4004 1N4005 1N4006 1N4007 1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399 1N5400 1N5401 IN5402 1N5403 1N5404 1N5405 1N5406 1N5407 1N5408 2021-1G 2023G


    OCR Scan     		057-2G 1611G 1620G 1621-2G 1623G 1641G 1N4001 1N4002 1N4004 1N4005 2SA532 BC109 BC184 BC549 BC317 2SC734 Y MS181A BC159 8 2SC876 TTP31A ML78M06A BC357 PDF

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 PDF

    T35W

    Abstract: transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d
    Text: NEW PRODUCTS BULLETIN SINGLE-ENDED MOLDED BRIDGES Fig. 1 International Rectifier expands its quality line of highly reliable molded \ bridges with the new 10DB series of 1 amp full-wave silicon bridge rectifiers. The single-ended, in-line configuration is suitable for PC board applications,


    OCR Scan     		10DB2P 10DB4P 10DB6P 180B6A T35W transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d PDF

    UAA2001

    Abstract: MC8500 micromodule m68mm19 1N9388 74ALS643 2N6058 MC145026 2N5160 MOTOROLA MC3340 equivalent pn3402
    Text: MOTOROLA Semiconductors THE EUROPEAN MASTER SELECTION 1982 The total num ber of standard Sem iconductor products available from M otorola ex­ ceeds 15 0 0 0 device types. To most of our custom ers this total presents an overw helm ing choice. The European Master Selection lists approxim ately 4 0 0 0 preferred devices that re­


    OCR Scan     		0HF40 0HF60 0HF80 6FP10 6F100 70HF10 UAA2001 MC8500 micromodule m68mm19 1N9388 74ALS643 2N6058 MC145026 2N5160 MOTOROLA MC3340 equivalent pn3402 PDF

    EN930

    Abstract: BCY70 BCY71 BCY72 BCY78 BCY79 BCY85 BCY86 BF394 BFW22
    Text: Low Level and General Purpose Amplifiers TYPE NO. POLA­ CASE RITY fl Cob N.F. IC VCE max IC min max max mA (V) (V) (mA) (MHz) (MHz) (dB) VCE(sat) HFE MAXIMUM RATINGS Pd IC VCEO (mW) (mA) (V) min max P P P P P TO-18 TO-18 TO-18 TO-18 TO-18 300 350 350 350


    OCR Scan     		BCY70 BCY71 BCY72 BCY78 BCY79 BCY85 O-92A BCY86 BF394 EN930 BFW22 PDF

    BCY85

    Abstract: to92c KM9011 bf394 BSY78 BSX51A BSY73 BSY89 BCY70 BCY72
    Text: Low Level and General Purpose Amplifiers TYPE NO. POLA­ CASE Pd RITY IC IC VCEO mW (mA) (V) min fl Cob N.F. IC min max max (MHz) (dB) VCE(sat) HFE MAXIMUM RATINGS max VCE max (mA) (V) (V) (mA) (MHz) BCY70 BCY71 BCY72 BCY78 BCY79 P P P P P TO-18 TO-18 TO-18


    OCR Scan     		BCY70 BCY71 BCY72 BCY78 BCY79 BCY85 O-92A BCY86 BF394 to92c KM9011 BSY78 BSX51A BSY73 BSY89 PDF

    APY12

    Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
    Text: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP


    OCR Scan     		Edition-1978) Ausgabe-1978) BS3934 SO-26 OT-114 NS371 APY12 BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367 PDF

    st178

    Abstract: diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor
    Text: S Y L V A N IA ECG S e m ic o n d u c to r L in eREPLACES OVER 35,000 TYPES introduction The ECG line of semiconductors is designed to minimize replacement parts inventory for the tech­ nician and yet economically meet replacement needs of the wide variety of entertainment equipment


    OCR Scan     		Sylvan58MC 09A001-00 66X0003-001 50746A 68X0003 68X0003-001 T-E0137 93B3-3 93B3-4 st178 diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor PDF

    BFX93

    Abstract: LN9014
    Text: MICRO E L E C T R O N I C S LTD SIE D • bOTlTflfl 0 0 0 1 0 7 3 STb ■ NEHK Low Level and General Purpose Amplifiers TYPE NO. P O L A R IT Y T -2 7 -0 1 Pd m W ■c (m A ) V C EO (V I FE V C E (S A T ) min max 'c (m A ) V CE (V ) 0.01 0.01 5 5 BFX93


    OCR Scan     		0GD11D7 O-220 O-237 ELF-002, O-237 MT-42 BFX93 LN9014 PDF