Transistor BSX 62-16

Contextual Info: ESC D • 023Sb05 Q Q Q M û n T H S I E â { NPN Silicon Planar Transistors BSX62 -BSX63 - SIEMENS AKTIEN6ESELLSCHAF -BSX 62 and BSX 63 are epitaxial NPN silicon planar transistors in TO 39 case 5 C 3

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR BSX62, BSX63 TO-39 Metal Can Package NPN SILICON PLANAR TRANSISTORS IN TO-39 PACKAGE. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise

Contextual Info: BSX62 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016) 0.53 (0.021)

Contextual Info: BSX62 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016) 0.53 (0.021)

BSX62SMD05

Contextual Info: BSX62SMD05 Dimensions in mm inches . 7.54 (0.296) 0.76 (0.030) min. 2.41 (0.095) 3.175 (0.125) Max. 2.41 (0.095) 3.05 (0.120) 0.127 (0.005) 3 10.16 (0.400) 5.72 (.225) 0.76 (0.030) min. 1 Bipolar NPN Device in a Hermetically sealed Ceramic Surface Mount Package for High

BSX63

Abstract: BSX62 BSX62-10 BSX62-16 BSX63-10 BSX63-16 bsx6210
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BSX62; BSX63 NPN switching transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jun 19 Philips Semiconductors Product specification NPN switching transistors

bsx63

Abstract: BSX62
Contextual Info: 1. • bb-53131 0 D 2 ? m M 712 ■ APX P h ilip s S e m ic o n d u c to rs Data sheet status Preliminary specification date of issue June 1992 BSX62-10, -16/BSX63-10, -16 Silicon planar epitaxial transistors N ANER PHILIPS/DISCRETE bTE D QUICK REFERENCE DATA

BSX63

Abstract: BSX62 BSX63-16 BSX62-16 BSX62-10 BSX63-10 IEC134 Philips discrete semiconductor
Contextual Info: =tiS3T31 0D57THM 712 APX Philips Semiconductors Data sheet status Preliminary specification date of issue June 1992 BSX62-10, -16/BSX63-10, -16 Silicon planar epitaxial transistors N AI1ER PHILIPS/DISCRETE bTE D Q U IC K REFERENCE DATA SYMBOL >C Ptot PARAM ETER

bsx62

Abstract: BSX63 vbe 10v, NPN Transistor
Contextual Info: Central BSX62 BSX63 TM Semiconductor Corp. NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BSX62, BSX63 types are NPN Silicon Transistors designed for general purpose applications where high collector current is required. MARKING: FULL PART NUMBER

BSX62

Abstract: to39
Contextual Info: BSX62 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016) 0.53 (0.021)

BSX62

Abstract: BSX62-10 BSX62-16 BSX63-16 BSX62-6 BSX63 BSX63-10 BSX63-6 bsx6210
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR BSX62, BSX63 TO-39 Metal Can Package NPN SILICON PLANAR TRANSISTORS IN TO-39 PACKAGE. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise

bsx63

Abstract: 3070MHz BSX62/10
Contextual Info: Philips Semiconductors Product specification NPN switching transistors BSX62; BSX63 FEATURES PINNING • High current max. 3 A PIN • Low voltage (max. 60 V). APPLICATIONS DESCRIPTION 1 emitter 2 base 3 collector, connected to case • Medium power switching.

BSX62SMD

Contextual Info: BSX62SMD Dimensions in mm inches . 0.89 (0.035) min. 3.60 (0.142) Max. 3 16.02 (0.631) 15.73 (0.619) 4.14 (0.163) 3.84 (0.151) 3.70 (0.146) 3.41 (0.134) 1 10.69 (0.421) 10.39 (0.409) 0.76 (0.030) min. 3.70 (0.146) 3.41 (0.134) Bipolar NPN Device in a Hermetically sealed

BSX63-16

Abstract: BSX62 BSX62-10 BSX62-16 BSX62-6 BSX63 BSX63-10 BSX63-6
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR TRANSISTOR BSX62, BSX63 TO-39 Metal Can Package NPN SILICON PLANAR TRANSISTORS IN TO-39 PACKAGE. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise

rca 2n2147

Abstract: 2N2207 2n2183 rca 2N2196 2N2214 2N2161 2N2222A motorola 2N2204 2n2162 2N2200
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 714 BFX69A BFX69A 2N1594 BCW94A 2SC366G 2N1644A 2N2192 2N2192A 2N2192B MPS650 CX904 CX904 2SC943 2SC943 2SC943 KT503B BCW90B BCW90B 2N731 Manufacturer

B0933

Abstract: 2SC7900 2SD234Y 2S0234 2sc3386 2S0255 B0241A b0131 5000N 2S0234Y
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 - 15 20 25 30 35 40 45 -50 55 60 65 70 75 80 -85 -90 >= -2~ 2S0130 2S0130R 2N3507 KT817B 2SC10S0 2SC10S1 2SC830 2S0234G 2S0234 2S0234R 100234 2S0234G-R 2S0130Y 2S02340 2S0234G-0 2S0130BL 2SC3386 2SC338SL

042c1

Abstract: 2S090 SSP62 mrf486 2S0882 2sc2906 2S0898 042C3 B0329 THA13
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 20 TRM5504 TRM5504 TRM5504 TRM6014 TRM6014 TRM6014 TRM6504 TRM6504 -:-~~~g~: 25 30 35 40 45 50 TRM7014 TRM7014 TRM7504 TRM7504 TRM7504 TRL8014 TRL8014 TRL8014 2:;C;3001 2SC2906AK 2SC2906AM 2S0141 2S0141

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

IRF5402

Abstract: IRFN540 IRFN630 IRFN530 IRFN640 8YV32-5 W06C 2205-M IRFN733 IRFn342
Contextual Info: MilitaryAerospace Division M ilitary-Aerospace Division ceram ic surface m ount devices and scree ned to m e e t th e m ost severe T 0 2 2 0 c e r a m ic su rface m o u n t devices A surface m o u n t r e p l a c e m e n t for th e p op ular T 0 2 2 0 M e t a l and T 0 2 5 7 package, the T 0 2 2 0 S M

BDV56

Abstract: BDV57 2N3055 TIPL777 BUS11A cv9936 BUX11 2N6033
Contextual Info: un itti IMI Semelab Mil / Aerospace Division CECC 5 0 0 0 0 QUALIFIED PRODUCT SEM ELAB has one of the largest ranges of C E C C approved power products in Europe. These products have undergone approval to support both new application requirem ents and also existing and “old”

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

Contextual Info: small signal Transistors D ESCR IPTIO N Vc b O VC EO v EB O V (V) (V) *V C ER hFE 'C B O v C B O ftiA ) (V) @ lc (m A) (V) m TY P E NO. < o T O -39 Case V C E (S A T) ® *C (V) (m A) *>CEO h C0 b ton toff NF (M H z) <PF) (ns) (ns) (dB ) *TY P *TY P

Contextual Info: Small signal Transistors TO-39 Case Continued TYPE NO. DESCRIPTION v CBO v CEO v EBO (V) (V) (V) *VCER •cao CnA> h HE VCBO (V) ® lc ® V GE VCE(SA T ) ® k ; *T (IDA) (m A) (M iz) (V) 00 U ce o NF (pF) •on (n«> *off (ns> (dB) *TYP *TYP •TYP *TYP