BT 35 F TRANSISTOR Search Results

BT 35 F TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

BT 35 F TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Bt 35 transistor Abstract: Bt 35 F transistor Text: MCC BC847AT, BT, CT omponents 20736 Marilla Street Chatsworth !"# $ % !"# NPN Surface Mount Small Signal Transistor 150mW Features • • • Epitaxial Die Construction Complementary PNP Type Available BC857AT,BT,CT	Original	BC847AT, BC857AT OT-523, MIL-STD-202, 150mW OT-523 BC847BT BC847CT 100mA, 100MHz Bt 35 transistor Bt 35 F transistor	PDF
Untitled Abstract: No abstract text available Text: MCC TM Micro Commercial Components BC847AT, BT, CT omponents 20736 Marilla Street Chatsworth !"# $ % !"# NPN Surface Mount Small Signal Transistor 150mW Features • • • Epitaxial Die Construction	Original	BC847AT, 150mW BC857AT OT-523 OT-523, MIL-STD-202, BC847BT BC847CT 100MHz 200HZ	PDF
Untitled Abstract: No abstract text available Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# BC847AT, BT, CT NPN Surface Mount Small Signal Transistor 150mW Features x x x x Epitaxial Die Construction	Original	BC847AT, BC857AT 150mW OT-523 OT-523, MIL-STD-202, BC847AT--1E BC847BT--1F BC847CT-1G.	PDF
Untitled Abstract: No abstract text available Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# BC847AT, BT, CT NPN Surface Mount Small Signal Transistor 150mW Features x x x x Epitaxial Die Construction	Original	BC847AT, BC857AT 150mW OT-523 OT-523, MIL-STD-202, BC847AT--1E BC847BT--1F BC847CT-1G.	PDF
Untitled Abstract: No abstract text available Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# BC847AT, BT, CT NPN Surface Mount Small Signal Transistor 150mW Features x x x x Epitaxial Die Construction	Original	BC847AT, 150mW BC857AT OT-523 MIL-STD-202, BC847AT--1E BC847BT--1F BC847CT-1G.	PDF
Untitled Abstract: No abstract text available Text: MCC TM Micro Commercial Components BC857AT, BT, CT omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features x x • PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Epitaxial Die Construction For Switching and AF Amplifier Applications	Original	BC857AT, -10mA, -10uA,	PDF
Untitled Abstract: No abstract text available Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# BC847AT, BT, CT Features NPN Surface Mount Small Signal Transistor 150mW • • Halogen free available upon request by adding suffix "-HF"	Original	BC847AT, BC857AT 150mW OT-523 OT-523 MIL-STD-202, BC847AT--1E BC847BT--1F BC847CT-1G.	PDF
Untitled Abstract: No abstract text available Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# BC847AT, BT, CT NPN Surface Mount Small Signal Transistor 150mW Features • Lead Free Finish/RoHS Compliant "P" Suffix designates	Original	BC847AT, 150mW BC857AT OT-523 MIL-STD-202, BC847AT--1E BC847BT--1F BC847CT-1G.	PDF
Untitled Abstract: No abstract text available Text: MCC TM Micro Commercial Components BC847AT, BT, CT omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features NPN Surface Mount Small Signal Transistor 150mW • • Halogen free available upon request by adding suffix "-HF"	Original	BC847AT, 150mW BC857AT OT-523 MIL-STD-202,	PDF
Q68000-A4334 Abstract: No abstract text available Text: UT 32E D • fi23b3S0 QQlVSl'l 5 « S I P NPN Silicon Switching Transistors SIEMENS/ SP C L i SEMICONDS _ SMBT 2222 SMBT 2222 A r - 3 5 " -;f • • • High D C current gain 0.1 to 500 mA Low collector-emitter saturation voltage Complementary types: S M B T 2907, S M B T 2907 A PNP	OCR Scan	fi23b3S0 Q68000-A4335 Q68000-A4334 Q68000-A6481 Q68000-A6473 103mA A23b32Q /IF6-10 Q68000-A4334	PDF
siemens 250 87 Abstract: No abstract text available Text: 32E D • A23b32G 001724^ □ « S I P PIMP Silicon Transistors SIEMENS/ SPCL-, SEMICONDS _ • For A F input stages and driver applications • High current gain • Low collector-em itter saturation voltage • Low noise between 30 Hz and 15 kHz	OCR Scan	A23b32G 23b320 0G17254 siemens 250 87	PDF
3904S Abstract: wi fi marking code transistor HK Text: SIEMENS SMBT 3904S NPN Silicon Switching Transistor Array 4 • High DC current gain: 0.1mA to 100mA 5 • Low collector-emitter saturation voltage 6 ^ ^ • Two galvanic internal isolated Transistors with high matching in one package • Complementary type: SM BT 3906S (PNP)	OCR Scan	3904S 100mA 3906S VPS05604 EHA07178 Q62702-A1201 OT-363 3904S wi fi marking code transistor HK	PDF
BTS 3900 a Abstract: BTS 3900 12N60 BTS 3900 l 35N120U1 24n60 52N60A IXSH 35N120AU1 35n120u 35N120AU1 Text: Insulated Gate Bipolar Transistors IGBT The IGBT is a com bination of bipolar and MOS technologies. The best features of bipolar transistors are merged with the voltage-controlled properties of M OSFETs. A dvantages to the user: • rugged, short-circuit-proof device	OCR Scan	T-227B BTS 3900 a BTS 3900 12N60 BTS 3900 l 35N120U1 24n60 52N60A IXSH 35N120AU1 35n120u 35N120AU1	PDF
NPN transistor 2n2222A plastic package to116 Abstract: SP3725QDB BT2907A 2N5146 2N3244 2N3245 2N3252 2N3253 2N3444 2N3467 Text: Transistors Cont. Discrete Devices Space Saving Devices Maximum Ratings Electrical Characteristics @ 25° C Am bient P q Type Polarity One Both Side Sides mW mW VCB Volts Vce Volts V eb Volts Min/Max Frequency V c e (Sat) @ i c /i B H f e @ ic mA Volts Package	OCR Scan	SP3763Q0 sp3763qf O-116 SP3725QDB SP34G7ADB O-116 BT2946 2N2946 BT3999 NPN transistor 2n2222A plastic package to116 BT2907A 2N5146 2N3244 2N3245 2N3252 2N3253 2N3444 2N3467	PDF

BT diode Abstract: ECONOPACK mounting instructions bsm 25 gd 1200 n2 bsm 75 gd 120 n2 bsm 50 gd 120 n2 calculation of IGBT snubber siemens igbt BSM 200 GA 120 BSM15GD120DN2 diode bym 26 siemens igbt BSM 100 Text: Technische Angaben Technical Information SIEMENS 1 Übersicht IGBT-Module 1 O verview IG BT Modules Hochsperrende spannungsgesteuerte Bipolar-Module Insulated Gate Bipolar Transistor modules Produktpalette Product Range IGBT-Module mit den Spannungen 600 V,	OCR Scan		PDF
Untitled Abstract: No abstract text available Text: SIEMENS SMBT 3904S NPN Silicon Switching Transistor Array 4 • High DC current gain: 0.1 mA to 100m A • Low collector-em itter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package • C om plem entary type: SM BT 3906S (PNP)	OCR Scan	3904S 3906S VPS05604 EHA07178 Q62702-A1201 OT-363 EHP00756	PDF
3904 Abstract: tr 3904 TR 3906 PNP SM Transistor 3904 transistor marking s1a 3904 SOT23 BT3904 sot23 3904 4007S S1A SOT23 Text: SIEM EN S NPN Silicon Switching Transistor • High DC current gain: 0.1 mA to 100 mA • Low collector-em itter saturation voltage SMBT 3904 • Com plem entary type: SM BT 3906 PNP Type Marking Ordering Code (tape and reel) PinCContigui ation 1 3 2 Package1*	OCR Scan	68000-A4416 OT-23 EHP0Q935 EHP00757 3904 tr 3904 TR 3906 PNP SM Transistor 3904 transistor marking s1a 3904 SOT23 BT3904 sot23 3904 4007S S1A SOT23	PDF
Untitled Abstract: No abstract text available Text: PMBT2222 PMBT2222A J v _ SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon transistors, in a microminiature plastic package intended for switching and linear appli cations in thick and thin film circuits.	OCR Scan	PMBT2222 PMBT2222A BT2222_ BT2222A	PDF
HEF4511 Abstract: HEF4511B HEF4511BD HEF4511BP Text: HEF4511B MSI BCD TO 7-SEGMENT LATCH/DECODER/DRIVER The HEF4511B is a BCD to 7-segment latch/decoder/driver with four address inputs D ^ to Dq , an active LOW latch enable input (ID, an active LOW ripple blanking input (BT),an active LOW lamp test input (LT), and seven active HIGH n-p-n bipolar transistor segment outputs (Oa to Og).	OCR Scan	HEF4511B 7Z79904 7Z79905 7Z79906 hef4070b HEF4511 HEF4511BD HEF4511BP	PDF
transistor F370 Abstract: t430 transistor T591 transistor T600 t514 TRANSISTOR ic mt 5380 transistor T700 ir43 2SC1674 Transistor 2sC1674 Text: NEC j m ^ T iv rx A ij F M f a - t R F , M IX . , h ^ C O N V . , X ^ O S C ./ B NPN Silicon Epitaxial Transistor FM Tuner RF, MIX., CONV., OSC. o F M f a - j- c o m m 'it m m , M W L&&&M , m m m m W B 0 / PACKAGE D IM EN SIO N S t i r Unit : mm f t M T ’t o	OCR Scan	2SC1674 I-125 SC-43 -411l transistor F370 t430 transistor T591 transistor T600 t514 TRANSISTOR ic mt 5380 transistor T700 ir43 2SC1674 Transistor 2sC1674	PDF
BLV95 Abstract: No abstract text available Text: N AMER P H I L I P S / D I S C R E T E LT E D bt>S3^31 □DSTlbM 03fl A BLV95 U.H.F. POWER TRANSISTOR N.P.N silicon planar epitaxial transistor prim arily intended fo r use in m obile radio transm itters for the 9 0 0 M H z com m unication band. Features • m ulti base structure and emitter-ballasting resistors fo r an o ptim um temperature profile	OCR Scan	BLV95 OT-171) BLV95	PDF
Y25n120d Abstract: No abstract text available Text: MOTOROLA O rder this docum ent by M G Y25N120D/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M G Y 25N 120D Insulated Gate Bipolar Transistor with Anti-Parallel Diode Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T O -2 6 4	OCR Scan	Y25N120D/D Y25n120d	PDF
ITE35C12 Abstract: ITE35F12 Text: Si GEC PLESSEY PRELIMINARY INFORMATION S E M I C O N D U C T O R S DS4313 -1.2 IT E 3 5 F 1 2 /IT E 3 5 C 1 2 POWERLINE N-CHANNEL IGBT WITH OPTIONAL ULTRAFAST DIODE The ITE35X12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for	OCR Scan	DS4313-1 ITE35F12/ITE35C12 ITE35X12 37bfi522 ITE35C12 ITE35F12	PDF
BDX45 Abstract: BDX47 BDX42 BDX43 BDX44 BDX46 Text: BDX45 BDX46 BDX47 P-N-P SILICON PLANAR DARLINGTON TRANSISTORS Silicon p-n-p planar Darlington transistors fo r industrial switching applications, e.g. print hammer, solenoid, relay and lamp driving. Encapsulated in a TO-126 plastic envelope w ith collector connected	OCR Scan	BDX45 BDX46 BDX47 O-126 BDX42, BDX43 BDX44 BDX45 BDX46 BDX47 BDX42	PDF

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BT 35 F TRANSISTOR Search Results

BT 35 F TRANSISTOR Result Highlights (5)

BT 35 F TRANSISTOR Datasheets Context Search

Bt 35 transistor

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Q68000-A4334

siemens 250 87

3904S

BTS 3900 a

NPN transistor 2n2222A plastic package to116

BT diode

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3904

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HEF4511

transistor F370

BLV95

Y25n120d

ITE35C12

BDX45