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    BT 35 TRANSISTOR Search Results

    BT 35 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    BT 35 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Bt 35 transistor

    Abstract: Bt 35 F transistor
    Text: MCC BC847AT, BT, CT   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# NPN Surface Mount Small Signal Transistor 150mW Features • • • Epitaxial Die Construction Complementary PNP Type Available BC857AT,BT,CT


    Original     		PDF BC847AT, BC857AT OT-523, MIL-STD-202, 150mW OT-523 BC847BT BC847CT 100mA, 100MHz Bt 35 transistor Bt 35 F transistor

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components BC847AT, BT, CT   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# NPN Surface Mount Small Signal Transistor 150mW Features • • • Epitaxial Die Construction


    Original     		PDF BC847AT, 150mW BC857AT OT-523 OT-523, MIL-STD-202, BC847BT BC847CT 100MHz 200HZ

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# BC847AT, BT, CT NPN Surface Mount Small Signal Transistor 150mW Features x x x x Epitaxial Die Construction


    Original     		PDF BC847AT, BC857AT 150mW OT-523 OT-523, MIL-STD-202, BC847AT--1E BC847BT--1F BC847CT-1G.

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# BC847AT, BT, CT NPN Surface Mount Small Signal Transistor 150mW Features x x x x Epitaxial Die Construction


    Original     		PDF BC847AT, BC857AT 150mW OT-523 OT-523, MIL-STD-202, BC847AT--1E BC847BT--1F BC847CT-1G.

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# BC847AT, BT, CT NPN Surface Mount Small Signal Transistor 150mW Features x x x x Epitaxial Die Construction


    Original     		PDF BC847AT, 150mW BC857AT OT-523 MIL-STD-202, BC847AT--1E BC847BT--1F BC847CT-1G.

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components BC857AT, BT, CT   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features x x • PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Epitaxial Die Construction For Switching and AF Amplifier Applications


    Original     		PDF BC857AT, -10mA, -10uA,

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# BC847AT, BT, CT Features NPN Surface Mount Small Signal Transistor 150mW • • Halogen free available upon request by adding suffix "-HF"


    Original     		PDF BC847AT, BC857AT 150mW OT-523 OT-523 MIL-STD-202, BC847AT--1E BC847BT--1F BC847CT-1G.

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# BC847AT, BT, CT NPN Surface Mount Small Signal Transistor 150mW Features • Lead Free Finish/RoHS Compliant "P" Suffix designates


    Original     		PDF BC847AT, 150mW BC857AT OT-523 MIL-STD-202, BC847AT--1E BC847BT--1F BC847CT-1G.

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components BC847AT, BT, CT   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features NPN Surface Mount Small Signal Transistor 150mW • • Halogen free available upon request by adding suffix "-HF"


    Original     		PDF BC847AT, 150mW BC857AT OT-523 MIL-STD-202,

    biss 0001

    Abstract: PBLS1504V PEMD4 PEMD15 PEMH15 PEMH24 PBLS1503V PEMD6 PEMB10 PMZ250UN marking
    Text: NXP ultra-small diodes and transistors for portable applications Downsize the footprint, boost the performance At NXP, our comprehensive portfolio of ultra-small diodes and transistors enables high performance in increasingly small portable electronics. We safeguard sensitive ICs with advanced


    Original     		PDF Packag35 OT984 HXS0N12) OT985 HXS0N16) biss 0001 PBLS1504V PEMD4 PEMD15 PEMH15 PEMH24 PBLS1503V PEMD6 PEMB10 PMZ250UN marking

    20 amp MOSFET transistor

    Abstract: N and P MOSFET
    Text: OM8OOISC OM8003SC OM8002SC OM8004SC POWER MOSFET WITH GATE DRIVE CIRCUIT IN 6-PIN HERMETIC PACKAGE omnirel corp 43E D • bTô^QTB QGQQSTb 7 MOMNI 100V Thru 500V, Up To 35 Amp, N-Channel MOSFET With Low Power Gate Drive Circuitry FEATURES • Isolated Hermetic Package


    OCR Scan     		PDF OM803 OM8001 OM8002 OM8003 OM8004 OM8004 20 amp MOSFET transistor N and P MOSFET

    100 amp npn mosfet

    Abstract: 100 amp mosfet 400v 20 amp mosfet 500V 25A Mosfet pnp 500v OM8001SC OM8002SC OM8003SC OM8004SC OM803
    Text: T M3E D bTÛ'JÜTB OOQQSTb 7 IOMNI OM 8OOISC OM8003SC OM8002SC OM8004SC POWER MOSFET WITH GATE DRIVE CIRCUIT IN 6-PIN HERMETIC PACKAGE OMNIREL CÔRP 100V Thru 500V, Up To 35 Amp, N-Channel MOSFET With Low Power Gate Drive Circuitry FEATURES • Isolated Hermetic Package


    OCR Scan     		PDF OM8003SC OM8002SC OM8004SC OM803 the003 QM8004 100 amp npn mosfet 100 amp mosfet 400v 20 amp mosfet 500V 25A Mosfet pnp 500v OM8001SC OM8004SC OM803

    Q68000-A4334

    Abstract: No abstract text available
    Text: UT 32E D • fi23b3S0 QQlVSl'l 5 « S I P NPN Silicon Switching Transistors SIEMENS/ SP C L i SEMICONDS _ SMBT 2222 SMBT 2222 A r - 3 5 " -;f • • • High D C current gain 0.1 to 500 mA Low collector-emitter saturation voltage Complementary types: S M B T 2907, S M B T 2907 A PNP


    OCR Scan     		PDF fi23b3S0 Q68000-A4335 Q68000-A4334 Q68000-A6481 Q68000-A6473 103mA A23b32Q /IF6-10 Q68000-A4334

    75-06A7T

    Abstract: Bt 35 transistor transistor 81 110 w 85 100-12E8 MWI 15-12A7 25-12A7T 30-06A7T transistor T 044
    Text: IGBT Modules - Sixpack configuration NPT IGBT Modules N P T IG B T = non-punch through insulated gate bipolar transistor; square R BSO A, short circuit rated 6-pack IG BT - Modules Fig. 81 ► New Type •W K/W Us A u T ,= 25°C IGBT mJ Tj = 125°C IGBT IGBT


    OCR Scan     		PDF 30-06A7 30-06A7T 50-06A7 50-06A7T 75-06A7 75-06A7T 15-12A7 25-12A7 50-12E7 100-06A8 Bt 35 transistor transistor 81 110 w 85 100-12E8 MWI 15-12A7 25-12A7T transistor T 044

    BTS 3900 a

    Abstract: BTS 3900 12N60 BTS 3900 l 35N120U1 24n60 52N60A IXSH 35N120AU1 35n120u 35N120AU1
    Text: Insulated Gate Bipolar Transistors IGBT The IGBT is a com bination of bipolar and MOS technologies. The best features of bipolar transistors are merged with the voltage-controlled properties of M OSFETs. A dvantages to the user: • rugged, short-circuit-proof device


    OCR Scan     		PDF T-227B BTS 3900 a BTS 3900 12N60 BTS 3900 l 35N120U1 24n60 52N60A IXSH 35N120AU1 35n120u 35N120AU1

    BT diode

    Abstract: ECONOPACK mounting instructions bsm 25 gd 1200 n2 bsm 75 gd 120 n2 bsm 50 gd 120 n2 calculation of IGBT snubber siemens igbt BSM 200 GA 120 BSM15GD120DN2 diode bym 26 siemens igbt BSM 100
    Text: Technische Angaben Technical Information SIEMENS 1 Übersicht IGBT-Module 1 O verview IG BT Modules Hochsperrende spannungsgesteuerte Bipolar-Module Insulated Gate Bipolar Transistor modules Produktpalette Product Range IGBT-Module mit den Spannungen 600 V,


    OCR Scan     		PDF

    3904S

    Abstract: wi fi marking code transistor HK
    Text: SIEMENS SMBT 3904S NPN Silicon Switching Transistor Array 4 • High DC current gain: 0.1mA to 100mA 5 • Low collector-emitter saturation voltage 6 ^ ^ • Two galvanic internal isolated Transistors with high matching in one package • Complementary type: SM BT 3906S (PNP)


    OCR Scan     		PDF 3904S 100mA 3906S VPS05604 EHA07178 Q62702-A1201 OT-363 3904S wi fi marking code transistor HK

    NPN transistor 2n2222A plastic package to116

    Abstract: SP3725QDB BT2907A 2N5146 2N3244 2N3245 2N3252 2N3253 2N3444 2N3467
    Text: Transistors Cont. Discrete Devices Space Saving Devices Maximum Ratings Electrical Characteristics @ 25° C Am bient P q Type Polarity One Both Side Sides mW mW VCB Volts Vce Volts V eb Volts Min/Max Frequency V c e (Sat) @ i c /i B H f e @ ic mA Volts Package


    OCR Scan     		PDF SP3763Q0 sp3763qf O-116 SP3725QDB SP34G7ADB O-116 BT2946 2N2946 BT3999 NPN transistor 2n2222A plastic package to116 BT2907A 2N5146 2N3244 2N3245 2N3252 2N3253 2N3444 2N3467

    transistor f420

    Abstract: transistor BJ 115 F420 transistor t514 TRANSISTOR ZT 5551 2SK67A transistor bt 667 TCA561 2S30 T010
    Text: NEC j m^Tiytn A Junction Field Effect Transistor 2SK67A E C M 4 > tf- ? > X N-Channel Silicon Ju n ctio n Field Effect Transistor ECM Im pedance C onverter W-mm/ P A C K A G E D IM E N S IO N S o M 'm m t T t o Unit : mm t ItMMTto OECM-i > o Y - h 2 .9 ± 0.2


    OCR Scan     		PDF 2SK67A t11-or-h t1780 transistor f420 transistor BJ 115 F420 transistor t514 TRANSISTOR ZT 5551 2SK67A transistor bt 667 TCA561 2S30 T010

    3904

    Abstract: tr 3904 TR 3906 PNP SM Transistor 3904 transistor marking s1a 3904 SOT23 BT3904 sot23 3904 4007S S1A SOT23
    Text: SIEM EN S NPN Silicon Switching Transistor • High DC current gain: 0.1 mA to 100 mA • Low collector-em itter saturation voltage SMBT 3904 • Com plem entary type: SM BT 3906 PNP Type Marking Ordering Code (tape and reel) PinCContigui ation 1 3 2 Package1*


    OCR Scan     		PDF 68000-A4416 OT-23 EHP0Q935 EHP00757 3904 tr 3904 TR 3906 PNP SM Transistor 3904 transistor marking s1a 3904 SOT23 BT3904 sot23 3904 4007S S1A SOT23

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SMBT 3904S NPN Silicon Switching Transistor Array 4 • High DC current gain: 0.1 mA to 100m A • Low collector-em itter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package • C om plem entary type: SM BT 3906S (PNP)


    OCR Scan     		PDF 3904S 3906S VPS05604 EHA07178 Q62702-A1201 OT-363 EHP00756

    603 transistor npn

    Abstract: 2N3906 DS transistor BC 312 603 transistor npn dj bipolar BC transistor BC847C di PN 2n2222A 2n3904 2n3906
    Text: ALLEGRO MICROSYSTEMS INC bbE D • 0504330 000b515 4bS ■ ALGR BIPOLAR TRANSISTORS ELECTRICAL CHARACTERISTICS at T = + 25°C A ^CBO 'c Max. V BH CBO V (BR)CEO V(BR)EBO Max. <mA) (V) (V) (V) (nA) ^CEO @ V CB Max. @ v CE (V) (nA) (V) Device Allegro Type Type


    OCR Scan     		PDF 000b515 2N918 2N2222A 2N2369 2N2484 2N2907A 2N2945 2N3019 2N3117 2N3251A 603 transistor npn 2N3906 DS transistor BC 312 603 transistor npn dj bipolar BC transistor BC847C di PN 2n2222A 2n3904 2n3906

    Untitled

    Abstract: No abstract text available
    Text: PMBT2222 PMBT2222A J v _ SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon transistors, in a microminiature plastic package intended for switching and linear appli cations in thick and thin film circuits.


    OCR Scan     		PDF PMBT2222 PMBT2222A BT2222_ BT2222A

    THC3251A

    Abstract: pnp for 2n3019 312 2N3904 2N4033 2N3906 DS 2N3117 2n5401 2n3904 bcy71 ALTERNATIVE 2N2222A 2N2369
    Text: ALLEGRO MICROSYSTEMS INC bbE D • 0504330 000b515 4bS ■ ALGR BIPOLAR TRANSISTORS ELECTRICAL CHARACTERISTICS at T = + 25°C A ^CBO 'c Max. V BH CBO V (BR)CEO V(BR)EBO Max. <mA) (V) (V) (V) (nA) ^CEO @ V CB Max. @ v CE (V) (nA) (V) — — Device Allegro


    OCR Scan     		PDF SG433a 2N918 THC918 2N2222A THC2222A 2N2369 THC2369 2N2484 THC2484 2N2907A THC3251A pnp for 2n3019 312 2N3904 2N4033 2N3906 DS 2N3117 2n5401 2n3904 bcy71 ALTERNATIVE