BT8550
Abstract: GMBT8550L
Text: ISSUED DATE :2004/08/27 REVISED DATE : GM BT8550L P N P E P I TA X I A L T R A N S I S T O R Description The BT8550L large current is designed for general purpose amplifier applications. Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10
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BT8550L
GMBT8550L
BT8550
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BT8550
Abstract: GMBT8550 BT855
Text: 1/2 GM BT8550 P N P E PI TA XI A L T RA N SI STO R Description The BT8550 is designed for general purpose amplifier applications. Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0.10 0.45 0.55 REF. G H K J
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BT8550
GMBT8550
BT8550
BT855
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2SC9014
Abstract: BEC npn 2SC9013 SOT-23 BTA43 BTA70 BA811 2SC1623L6 BT3904 BTA42 BT5551
Text: SOT-23 SMD Products Photograph of Products: Performance and Characteristics: NPN Silicon General Purpose Power Transistors Type Ptot Ic VCEO mW (mA) (V) hFE Polar 123 Type Ptot Ic VCEO (mW) (mA) (V) hFE Polar 123 2SC1623L3 225 100 40 60～90 BEC BCW60A 225
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OT-23
2SC1623L3
BCW60A
2SC1623L4
BCW60B
2SC1623L5
BCW60C
2SC1623L6
BCW60D
2SC1623L7
2SC9014
BEC npn
2SC9013 SOT-23
BTA43
BTA70
BA811
2SC1623L6
BT3904
BTA42
BT5551
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LB121A
Abstract: TIF42C JAPAN transistor TIF41C TIF32C HE9013H transistor EBC 3904 3842P SC2625 BD238 EV
Text: s * hu tt s o m n iB J U f tic « » * a * B D » o r b d s t » In addition to our own products, we supply the following products in JAPAN. TRANSISTOR, LINEAR 1C ' J M S S M A L L NPN N U M B ER PN P or IVD— SIGNAL TRANSISTORS MAXIMUM R ATIN G S HSM C
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BT1815
HMBT1Q15
BT2222A
BT2907A
HBC807
BC817
BT5087
BT5088
BT8050
BT8550
LB121A
TIF42C
JAPAN transistor
TIF41C
TIF32C
HE9013H
transistor EBC 3904
3842P
SC2625
BD238 EV
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