BTA65
Abstract: PSA65
Text: E E M C O N O U C TO R m MPSA65 BTA65 PZTA65 PNP Darlington Transistor This device is designed for applications requiring extrem ely high current gain at currents to 800 mA. Sourced from Process 61. See M PSA64 for characteristics. Absolute Maximum RâtinÇjS
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MPSA65
MMBTA65
PZTA65
MPSA65
MMBTA65
PSA64
BTA65
PSA65
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FAIRCHILD SOT-223 MARK
Abstract: MMBTA65 MPSA64 MPSA65 PZTA65
Text: fv* '€2 CZ> T O R BTA65 SOT-23 PZTA65 B / PZTA65 TO-92 / BTA65 MPSA65 SOT-223 M a rk : 2 W PNP Darlington Transistor T h is d e v ic e is d e s ig n e d fo r a p p lic a tio n s re q u irin g e x tre m e ly high c u rre n t g a in at c u rre n ts to 80 0 m A . S o u rc e d fro m P roce ss 61.
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MPSA65
MMBTA65
OT-23
PZTA65
OT-223
MPSA64
FAIRCHILD SOT-223 MARK
MMBTA65
MPSA65
PZTA65
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Untitled
Abstract: No abstract text available
Text: S E IV ZS’NES wJ CZ>T O R • MPSA65 BTA65 PZTA65 PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings
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OCR Scan
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PDF
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MPSA65
MMBTA65
PZTA65
MPSA64
MPSA65
MMBTA65
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