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Catalog Datasheet	MFG & Type	Document Tags	PDF
42t SOT23 Abstract: BF556A BF556B BF556C marking codes power devices philips marking 42t Philips KS 40 Text: Philips Semiconductors • btjS3T31 0DB3540 SÛM ■ APX „ _ , Product specification N AHER P H I L I P S / D I S C R E T E N-channel field-effect transistors QUICK REFERENCE DATA FEATURES • Low leakage level typ. 500 fA • High gain • Low cut-off voltage.	OCR Scan	btjS3T31 0DB3540 BF556A BF556B BF556C kbS3131 42t SOT23 BF556C marking codes power devices philips marking 42t Philips KS 40	PDF
BDV95 Abstract: BDV91 BDV93 BDV96 BDV92 BDV94 Text: BDV91 BDV93 BDV95 SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N epitaxial base power transistors in the plastic S O T -93 envelope. These transistors are intended fo r use in audio o utpu t stages and general am plifier and switching applications. P-N-P complements are B D V 92 , B D V 9 4 and B D V 96.	OCR Scan	BDV91 BDV93 BDV95 OT-93 BDV92, BDV94 BDV96. BDV91 BDV93 BDV95 BDV96 BDV92	PDF
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE b'JE ]> • bbS3T31 DDHbb37 =142 H A P X _ J BYM36 SERIES VERY FAST SOFT-RECOVERY AVALANCHE RECTIFIER DIODES Glass passivated rectifier diodes in hermetically sealed axial-leaded glass envelopes. They are intended for use in switched-mode power supplies and high-frequency inverter circuits. In general, they are used	OCR Scan	bbS3T31 DDHbb37 BYM36 BYM36A D02bb43	PDF
BDT63BF Abstract: 63BF BDT*63CF BDT63CF BDT63F 63CF AI mm sot 553 BDT62AF BDT62BF BDT62CF Text: BDT63F; BDT63AF I ^BDT63BF; BPT63CF SILICON DARLINGTON POWER TRANSISTORS NPN silicon darlington power transistors in a S 0 T 1 8 6 envelope w ith an electrically insulated mounting base. Th e devices are designed fo r audio output stages and general am plifier and switching applications.	OCR Scan	BDT63F; BDT63AF BDT63BF; BDT63CF S0T186 BDT62F, BDT62AF, BDT62BF BDT62CF. BDT63F BDT63BF 63BF BDT*63CF BDT63CF 63CF AI mm sot 553 BDT62AF BDT62CF	PDF
BC560 Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE b'lE I> bbSaiBl QQE7S81 Tbb BC559 BC560 _ ; v _ SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in a plastic TO-92 envelope, primarily intended for low-noise input stages in tape recorders, hi-fi amplifiers and other audio-frequency equipment.	OCR Scan	QQE7S81 BC559 BC560 BC559A BC559B BC560A BC560	PDF