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    BU105 TRANSISTOR Search Results

    BU105 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    BU105 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    bu105

    Abstract: No abstract text available
    Text: BU105 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)750 V(BR)CBO (V)750 I(C) Max. (A)2.5 Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC)125õ I(CBO) Max. (A)1.0mx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    PDF BU105

    DK53

    Abstract: dk52 BU724AS mje2055 2n3055 replacement BUX98PI BD263 BD699 BD292 2N5037
    Text: Bipolar Transistors Cross Reference INDUSTY STANDARD 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240


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    PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 DK53 dk52 BU724AS mje2055 2n3055 replacement BUX98PI BD263 BD699 BD292 2N5037

    DK53

    Abstract: dk52 2SC4977 MJE102 BD699 2SA1046 BU808DFI equivalent 2n3055 replacement MJ2955 replacement BUH513
    Text: BIPOLAR TRANSISTORS CROSS REFERENCE Industry standard 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240


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    PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 DK53 dk52 2SC4977 MJE102 BD699 2SA1046 BU808DFI equivalent 2n3055 replacement MJ2955 replacement BUH513

    BUV48I

    Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
    Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable


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    PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046

    BU108

    Abstract: 62-3-1-2 2N555 MJ4361 2SC889 MJ1000 MJ3237 BDW94 bd95 DTS801
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5877 2N5878 Complementary Silicon High-Power Transistors . . . designed for general–purpose power amplifier and switching applications. 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 – 80 VOLTS 150 WATTS


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    PDF 2N5877 2N5878 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C BU108 62-3-1-2 2N555 MJ4361 2SC889 MJ1000 MJ3237 BDW94 bd95 DTS801

    BU108

    Abstract: 2SC194 transistor Bc 574 2SC1419 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV20 SWITCHMODE Series NPN Silicon Power Transistor 50 AMPERES NPN SILICON POWER METAL TRANSISTOR 125 VOLTS 250 WATTS . . . designed for high speed, high current, high power applications. • High DC current gain: hFE min = 20 at IC = 25 A


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    PDF BUV20 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 BU108 2SC194 transistor Bc 574 2SC1419 BU326 BU100

    transistor 3569

    Abstract: t4 3570 dpak BU 508 transistor BU108 BDW93C ST T4 3580 transistor t4 3570 BU326 BU100 MJ*15033
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJD200 PNP MJD210 Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage —


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    PDF Bandwi32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 transistor 3569 t4 3570 dpak BU 508 transistor BU108 BDW93C ST T4 3580 transistor t4 3570 BU326 BU100 MJ*15033

    transistor MJ2501

    Abstract: BU108 transistor 2sC2238 transistor sdt9201 BDX54 transistor 2SD425 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ413 MJ423 High-Voltage NPN Silicon Transistors 10 AMPERE POWER TRANSISTORS NPN SILICON 400 VOLTS 125 WATTS . . . designed for medium–to–high voltage inverters, converters, regulators and switching circuits. • High Voltage — VCEX = 400 Vdc


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    PDF MJ413 MJ423 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C transistor MJ2501 BU108 transistor 2sC2238 transistor sdt9201 BDX54 transistor 2SD425 BU326 BU100

    automotive ignition tip162

    Abstract: bc337 cross-reference BU108 BD390 cross reference replacement transistor BC337 BUX48A 2SD1815 "cross reference" TIP102 Darlington transistor Motorola MJ15022 MJ1000
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU323AP NPN Silicon Darlington Power Transistor The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. • Collector–Emitter Sustaining Voltage —


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    PDF BU323AP BU323AP TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C automotive ignition tip162 bc337 cross-reference BU108 BD390 cross reference replacement transistor BC337 BUX48A 2SD1815 "cross reference" TIP102 Darlington transistor Motorola MJ15022 MJ1000

    2SC1419

    Abstract: TIP54 MJ1000 MJ15024 MJ15025 2SC1943 SE9302 MJE2482 2SD675 BU326 BU108
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE350 Plastic Medium Power PNP Silicon Transistor 0.5 AMPERE POWER TRANSISTOR PNP SILICON 300 VOLTS 20 WATTS . . . designed for use in line–operated applications such as low power, line–operated series pass and switching regulators requiring PNP capability.


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    PDF MJE350 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 2SC1419 TIP54 MJ1000 MJ15024 MJ15025 2SC1943 SE9302 MJE2482 2SD675 BU326 BU108

    Motorola case 77

    Abstract: 2N3055 BU108 2sc15 bdw93c applications BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Complementary Silicon Power Plastic Transistors NPN MJE200* PNP MJE210* . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage — VCEO sus = 25 Vdc (Min) @ IC = 10 mAdc


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    PDF MJE200* MJE210* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C Motorola case 77 2N3055 BU108 2sc15 bdw93c applications BU326 BU100

    2SA1046

    Abstract: BD419 2SC1943 BD4202 BD420 2SC2071 2SC1237 2SA939 BD133 2sc1903
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD438 BD440 BD442 Plastic Medium Power Silicon PNP Transistor . . . for amplifier and switching applications. Complementary types are BD437 and BD441. 4.0 AMPERES POWER TRANSISTORS PNP SILICON ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ


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    PDF BD437 BD441. BD438 BD440 BD442 TIP73B TIP74 TIP74A TIP74B TIP75 2SA1046 BD419 2SC1943 BD4202 BD420 2SC2071 2SC1237 2SA939 BD133 2sc1903

    2SC124

    Abstract: 2n5195 motorola BU108 bd238 equivalent 2SA1046 tip3055 equivalent BU806 Complement BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5194 2N5195* Silicon PNP Power Transistors *Motorola Preferred Device . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to NPN 2N5191, 2N5192 4 AMPERE POWER TRANSISTORS


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    PDF 2N5191, 2N5192 2N5194 2N5195* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A 2SC124 2n5195 motorola BU108 bd238 equivalent 2SA1046 tip3055 equivalent BU806 Complement BU326 BU100

    electronic ballast with MJE13003

    Abstract: BU108 application notes MJE13005 NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 mje13003 ballast MJE2482 2SD675 2SC1419 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUD43B Product Preview SWITCHMODE NPN Silicon Planar Power Transistor POWER TRANSISTORS 2 AMPERES 700 VOLTS 25 WATTS The BUD43B has an application specific state–of–the–art die designed for use in 220 V line operated Switchmode Power supplies and electronic ballast “light


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    PDF BUD43B BUD43B TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C electronic ballast with MJE13003 BU108 application notes MJE13005 NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 mje13003 ballast MJE2482 2SD675 2SC1419 BU326 BU100

    c 3421 transistor

    Abstract: BU108 transistor equivalent of BU406 equivalent transistor 2n3055 bu126 motorola 2SD165 bc 574 transistor D 1163 A BU208A 2N4906 MOTOROLA
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Horizontal Deflection Transistor . . . designed for use in televisions. • • • • Collector–Emitter Voltages VCES 1500 Volts Fast Switching — 400 ns Typical Fall Time Low Thermal Resistance 1_C/W Increased Reliability


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    PDF BU208A TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 c 3421 transistor BU108 transistor equivalent of BU406 equivalent transistor 2n3055 bu126 motorola 2SD165 bc 574 transistor D 1163 A BU208A 2N4906 MOTOROLA

    MJ15003 300 watts amplifier

    Abstract: ST T4 3580 MJD340 ST mje34 2sd478 D45H8 EQUIVALENT BUX98A SE9302 MJE2482 2SC1419
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN High Voltage Power Transistors MJD340* PNP MJD350* Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications. *Motorola Preferred Device DPAK For Surface Mount Applications


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    PDF MJE340 MJE350 MJD340* MJD350* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A MJ15003 300 watts amplifier ST T4 3580 MJD340 ST mje34 2sd478 D45H8 EQUIVALENT BUX98A SE9302 MJE2482 2SC1419

    BU105

    Abstract: LG flyback MJ105 k535 transistor BU 110 flyback transformer lg Lg flyback transformer 18 pulse drive allen bradley bu 105 Transistor W03
    Text: MJ105 S ILIC O N BU105 H O RIZO N TAL D E FL E C T IO N SILICO N TR A N SISTO R S . . . designed for use in line operated black and w hite (19 and 20 inch 1 1 0 ° deflection circuits) or color (11 and 14 inch 9 0 ° deflection circuits) television receivers.


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    PDF MJ105 BU105 BUI05 MJ105, bu105 mj105 LG flyback k535 transistor BU 110 flyback transformer lg Lg flyback transformer 18 pulse drive allen bradley bu 105 Transistor W03

    bcy59 equivalent

    Abstract: BU108 BUY69 BC326 F011 transistor BSCECC F011 bcy78 equivalent bcy79 equivalent ica 350
    Text: BS9000 NPN Power Transistors TO-3 Package B S Type Num ber VCBO Com m ercial Equivalent Case Outlines A bsolu te M axim um Ratings IC A VEBO PTOT 8 50 5 5 10 6 7 50 70 B S 93 63 B S 93 65 B S 93 63 F014 F191 F016 B D 2 53 , A, B C BU105 BU108 3 5 0 to 900


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    PDF BS9000 BS9363 BS9365 BD253 BU105 BU108 BS936S bcy59 equivalent BUY69 BC326 F011 transistor BSCECC F011 bcy78 equivalent bcy79 equivalent ica 350

    tip 410 transistor

    Abstract: transistor TIP 662 P6020 P6019 transistor BD 253 BU105 texasinstruments bu 105 TRANSISTOR bd 108 BUY69
    Text: BU105 NPN SILICON POWER TRANSISTOR D E S IG N E D FOR H IG H V O L T A G E C .R .T .S C A N N IN G • • • V'c es Rating 1500 V Current Rating - 2 .5 Amps Peak Fast Switching — tp at 2 Amps 0.6 Microsecond Typical development types The data presented here ¡s o f a device under deve lopm ent, and m ay be subject to change w ith o u t notice . N o responsibi­


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    PDF

    BUY69

    Abstract: bu137 transistor t03 BU108 BC326 BU500 bu137a F011 transistor bcy79 equivalent 2s026
    Text: Metal Can Power H igh V o lta g e 200-1500 V o lts Vce Case Outlines «- *4* •* + r] •U i -0 - 2 3 - “ 6-6-4- — 38 05 min - D im ensions in mm TO-5 9 1 Constn. V C B O V Outline IC Pk A IC d.c. A PTO T 200 6 250 300 400 6 4 4 4 4 50 50 50 50 10 100


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    PDF 0-400I BD253 BD253A BD253B BFX84 BFX85 BFX86 BCY78 BCY79 BCY58 BUY69 bu137 transistor t03 BU108 BC326 BU500 bu137a F011 transistor bcy79 equivalent 2s026

    BU105

    Abstract: BUY69 BU108 BU137 F014 transistor 5010 S010 BS-9000 BU137A
    Text: Discrete Semiconductors T e x a s In s t r u m e n t s BS9000 High Speed Rectifiers D C Tw no Number BS9331 BS9331 BS9331 BS9331 BS9331 F027 F027 F027 F027 F027 Commercia! Equivalent Case 1N3879/R 1N3880/R 1N3881/R 1 N3882/R 1N3883/R S010 S010 S010 S010 S010


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    PDF BS9000 BS9331 1N3879/R 1N3880/R 1N3881/R 1N3882/R BU105 BUY69 BU108 BU137 F014 transistor 5010 S010 BS-9000 BU137A

    bc109 equivalent

    Abstract: BC107 equivalent transistors EQUIVALENT TRANSISTOR bc108 bc108 equivalent BC177 equivalent BC107 equivalent BC178 equivalent equivalent of BC178 2n3963 equivalent transistor equivalent bc108
    Text: Metal Can Metal Can Product Variations Low Level General Purpose Am plifiers TO-5, TO-39 and TO-18 can be supplied with several variations from standard. D evice Type Lead Length The standard lead length is 12,7mm 0,5in . Certain types are available with longer leads— 38,1mm (1,5in) at a small extra


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    PDF BCW35GP. BFX84 BFX85 BFX86 BCY78 BCY79 BCY58 BCY59 2N720A BC325 bc109 equivalent BC107 equivalent transistors EQUIVALENT TRANSISTOR bc108 bc108 equivalent BC177 equivalent BC107 equivalent BC178 equivalent equivalent of BC178 2n3963 equivalent transistor equivalent bc108

    sx3704

    Abstract: BRC157 BRC-116 Germanium Diode aa143 1n4148 ITT TRANSISTOR BC147 BC107/spice model bf199 BY238 SN76226DN tungsram
    Text: rh is Booklet • • • ue to fluctuations in availability, some types of semiconductors used in Thorn products have >f necessity changed from those originally specified and quoted in service literature. This )lus the fact that some service replacements are


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    PDF ircD376 BD234 VT854, VT855â VT854* iTT44, BZX79-C24, BZX83-C24, BZX88-C24 sx3704 BRC157 BRC-116 Germanium Diode aa143 1n4148 ITT TRANSISTOR BC147 BC107/spice model bf199 BY238 SN76226DN tungsram

    triac LT 5220

    Abstract: BF247 bd130 by103 LIF 4117 2N3020 2N2405 bu208 2N7923 2n5716
    Text: Product Guide Page Rectifiers Transistors 20 Switching, Small Signal, Medium Power, High Power, High Frequency . 4 th ru 14 Transistors (Fets) 15 th ru 17 Thyristors 21 th ru 22 Triacs 23 Zeners 18 thru 19 Outlines 24 thru 25 Index 2 thru 3 (A LPH A NUM ERIC)


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    PDF 041P9C RO-45 O-92/1/2/3 O-92/5 O-106 O-220 triac LT 5220 BF247 bd130 by103 LIF 4117 2N3020 2N2405 bu208 2N7923 2n5716