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    BU307F Search Results

    BU307F Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BU307F Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BU307F Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BU307F Philips Semiconductors Silicon Diffused Power Transistors Scan PDF

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    Untitled

    Abstract: No abstract text available
    Text: BU307F Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)700 V(BR)CBO (V) I(C) Max. (A)8.0 Absolute Max. Power Diss. (W)20 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)5.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF BU307F

    BD307

    Abstract: BU306 9v dc motor BU306F BU307F transistor 400v BD306 300V transistor npn 2a NPN Transistor 1A 400V transistor b 40 Ic-5A datasheet
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU306F/307F DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 300V(Min)- BD306F 400V(Min)- BD307F ·Collector Current-8A APPLICATIONS ·Designed for use in switching regulators, inverters, motor


    Original     		PDF BU306F/307F BD306F BD307F BU306F BU307F BD307 BU306 9v dc motor BU306F BU307F transistor 400v BD306 300V transistor npn 2a NPN Transistor 1A 400V transistor b 40 Ic-5A datasheet

    Untitled

    Abstract: No abstract text available
    Text: DEVELOPMENT DATA This data sheet contains advance Information and specifications are subject to change without notice. • bbS3Ci3;L DDlaSb3r ^ ■ BU306F BU307F J N AflER P H I L I P S / ] I S CRETE 2SE D T -5 3 '^ 7 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a SOT186 envelope with electrically


    OCR Scan     		PDF BU306F BU307F OT186 BU306F T-33-09

    M-988

    Abstract: BU306F 307F BU307F BU306
    Text: bbSB'JBl GG1.ÖSL1 1 DEVELOPMENT DATA BU306F BU307F This data sheet contains advance Information and specifications are subject to change without notice. N AMER PHILIPS / D I S CR E T E 2SE D T-33'Ö? SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a SOT186 envelope with electrically


    OCR Scan     		PDF bfaS3131 BU306F BU307F OT186 T-33-09 7Z9467? M-988 307F BU307F BU306

    up 3080 lg

    Abstract: PS 307 5A B1056 PS 307 2A 307F BU306F BU307F lg-5a ic 7294
    Text: 11 GOlöSbl 1 DEVELOPM ENT DATA BU306F BU307F This data sheet contains advance Information and specifications are subject to change without notice. N AMER PH IL IPS /DISCRETE 2SE D T-33-Ö? SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a SOT186 envelope with electrically


    OCR Scan     		PDF BU306F BU307F OT186 bS3eL31 T-33-09 up 3080 lg PS 307 5A B1056 PS 307 2A 307F BU307F lg-5a ic 7294