BUF660
Abstract: No abstract text available
Text: BUF660 Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features D D D D D D D D D Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses Very low dynamic saturation Very low operating temperature
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BUF660
D-74025
BUF660
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BUF660
Abstract: No abstract text available
Text: BUF660 Silicon NPN High Voltage Switching Transistor Features D D D D D D D D D Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses Very low dynamic saturation Very low operating temperature
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BUF660
D-74025
18-Jul-97
BUF660
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BUF660
Abstract: No abstract text available
Text: BUF660 TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features D D D D D D D D D Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planarpassivation 100 kHz switching rate Very low switching losses Very low dynamic saturation
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BUF660
D-74025
BUF660
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equivalent transistor bul128
Abstract: HALL EFFECT 21E equivalent of transistor 2sc4106 2sC2335 TRANSISTOR equivalent Shortform Transistor Guide BUL208 BUF656B KSE13007 equivalent BUD620 BUL128 replacements
Text: Bipolar Power Transistors Data Book 1997 General Information Data Sheets Addresses Table of Contents General Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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Untitled
Abstract: No abstract text available
Text: T e m ic BUF660 Semiconductors Silicon NPN High Voltage Switching Transistor Features • • • • • • • • • Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses Very low dynamic saturation
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PDF
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BUF660
D-74025
18-Jul-97
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BUF660
Abstract: No abstract text available
Text: _ BUF660 Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Simple-sWitch-Off Transistor SWOT • HIGH SPEED technology • Planar passivation • 100 kHz switching rate • Very low switching losses
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OCR Scan
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PDF
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BUF660
20-Jan-99
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transistor BUF660
Abstract: No abstract text available
Text: BUF660 Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Simple-sWitch-Off Transistor SWOT • HIGH SPEED technology • Planar passivation • 100 kHz switching rate • Very low switching losses • Very low dynamic saturation
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BUF660
20-Jan-99
transistor BUF660
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T0220
Abstract: D-PAK BUF654 DPAK TDI30 BUD630
Text: T em ic S e m i c o n d u c t o r s T02S2 DPAK T0251 DPAK T0220 Bipolar Power Transistors Maximum Ratings Part Number Plot at Tease W °c Electrical Characteristics k: VCES VCEG A V V tf at fis hpE k: A at Ic and Vce A ! v CEsat at Ic and hpE V V A i Package
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T0251
T02S2
T0220
BUD600
BUD616A
BUD620
BUD630
BUD636A
BUD700D
BUF620
T0220
D-PAK
BUF654
DPAK
TDI30
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