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    BUL52BFI Search Results

    BUL52BFI Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BUL52BFI Semelab ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: SEME BUL52BFI LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 6.3 10.2 3.6 Dia. 15.1 Designed for use in electronic ballast applications • • • • 1 2 3 14.0 1.3 0.85 FEATURES


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    PDF BUL52BFI 100mA

    BUL52BFI

    Abstract: transistor 800V 1A transistor 400v 8a to220
    Text: SEME BUL52BFI LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 6.3 10.2 3.6 Dia. 15.1 Designed for use in electronic ballast applications • • • • 1 2 3 14.0 1.3 0.85 FEATURES


    Original
    PDF BUL52BFI 100mA BUL52BFI transistor 800V 1A transistor 400v 8a to220

    NPN 250W

    Abstract: BUL50A-T247 NPN 400V 40A BUR13 BUL58
    Text: Search Results Part number search for devices beginning "BUL47" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD BUL47A NPN TO3 300V 40A 25 - 4/25 20MHz 200W


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    PDF BUL47" BUL47A BUL47B 20MHz BUL50" BUL50A BUL50A-T247 BUL50B 10MHz NPN 250W NPN 400V 40A BUR13 BUL58

    Diode 400V 5A

    Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
    Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM


    Original
    PDF 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN

    T0251

    Abstract: T0-251
    Text: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES Type_No BUL47A BUL47B BUL48A BUL48B BUL49A BUL49B BUL50A BUL50B BUL51A BUL51B BUL52A BUL52AFI BUL52AH BUL52B BUL52BFI BUL52BL BUL53A BUL53B BUL54A BUL54B BUL54BFI BUL55A BUL55B BUL56A BUL56B BUL57A BUL58A


    OCR Scan
    PDF BUL47A BUL47B BUL48A BUL48B BUL49A BUL49B BUL50A BUL50B BUL51A BUL51B T0251 T0-251

    Untitled

    Abstract: No abstract text available
    Text: IMI = fï= IMI SEME BUL52BFI LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm <* 10.2 *\ 3.6 Dia. Designed for use in electronic ballast applications • SEMEFAB DESIGNED AND DIFFUSED DIE


    OCR Scan
    PDF BUL52BFI T0220 100mA

    mje13009 equivalent

    Abstract: MJEI3008 BUV46 equivalent buu26 ST MJE13007 mje13007 equivalent
    Text: Power Management Division Power Management Division bipolar pow er transistors Sem ela b continually strives to offer improved specification bipolar transistors. One example the B U L 74 A MJE13 009 equivalent , is aimed at the power supply/lighting market. I t ’s ideal


    OCR Scan
    PDF BUL74A MJE13009 BUL36I T022SGO T0220 BUV46 MJE13004 BUL53A mje13009 equivalent MJEI3008 BUV46 equivalent buu26 ST MJE13007 mje13007 equivalent