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    BUP TRANSISTOR Search Results

    BUP TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    BUP TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BUP142

    Abstract: Shenzhen SI Semiconductors
    Text: Shenzhen SI Semiconductors Co., LTD. Product Specification BUP142 BUP SERIES TRANSISTORS ●FEATURES：•HIGH VOLTAGE CAPABILITY ●APPLICATION: ■FLUORESCENT LAMP ■HIGH SPEED SWITCHING ■ELECTRONIC BALLAST ●Absolute Maximum Ratings（Tc=25°C） ■WIDE SOA


    Original     		PDF BUP142 O-251 BUP142 Shenzhen SI Semiconductors

    BUP162

    Abstract: 060-C1
    Text: Shenzhen SI Semiconductors Co., LTD. Product Specification BUP162 BUP SERIES TRANSISTORS ●FEATURES：•HIGH VOLTAGE CAPABILITY ●APPLICATION：■FLUORESCENT LAMP ■HIGH SPEED SWITCHING ■ELECTRONIC BALLAST ●Absolute Maximum Ratings（Tc=25°C） ■WIDE SOA


    Original     		PDF BUP162 O-251 BUP162 060-C1

    IGBT. CM50TF-12H

    Abstract: CM50TF-12H
    Text: MITSUBISHI IGBT MODULES CM50TF-12H MEDIUM POWER SWITCHING USE INSULATED TYPE A B C BuP EuP BvP EvP BwP EwP P J N E u v D w N BuN EuN S - DIA. 2 TYP. BvN EvN M F R BwN EwN F R K Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of


    Original     		PDF CM50TF-12H IGBT. CM50TF-12H CM50TF-12H

    BUN DIODE

    Abstract: 400v 15A transistor module DIODE EVP 25 400v 15A igbt module 600v 30a IGBT CM15TF-24H
    Text: CM15TF-24H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Six-IGBT IGBTMOD H-Series Module 15 Amperes/1200 Volts A B Q Q R BuP P R EuP BvP BuN EuN BvN R EvP BwP EwP EvN BwN EwN P J U N S - DIA. (2 TYP.) V K H L W H E


    Original     		PDF CM15TF-24H Amperes/1200 BUN DIODE 400v 15A transistor module DIODE EVP 25 400v 15A igbt module 600v 30a IGBT CM15TF-24H

    BUN DIODE

    Abstract: BUP 304 600v 30a IGBT BUP 300 CM30 bup 304 equivalent bup 77 CM30TF-12H H bridge 300v 30a 12A1000
    Text: CM30TF-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Six-IGBT IGBTMOD H-Series Module 30 Amperes/600 Volts A B Q Q R BuP P R EuP BvP BuN EuN BvN R EvP BwP EwP EvN BwN EwN P J U N S - DIA. (2 TYP.) V K H L W H E


    Original     		PDF CM30TF-12H Amperes/600 BUN DIODE BUP 304 600v 30a IGBT BUP 300 CM30 bup 304 equivalent bup 77 CM30TF-12H H bridge 300v 30a 12A1000

    600v 30a IGBT

    Abstract: BUN DIODE CIRCUIT DIAGRAM UPS welding circuit diagram CM30TF-24H DIODE EVP 25 igbt 30A
    Text: CM30TF-24H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Six-IGBT IGBTMOD H-Series Module 30 Amperes/1200 Volts A B C BuP EuP BvP EvP BwP EwP P J N E u v D w N BuN EuN S - DIA. (2 TYP.) BvN EvN M F R BwN EwN F R L K


    Original     		PDF CM30TF-24H Amperes/1200 600v 30a IGBT BUN DIODE CIRCUIT DIAGRAM UPS welding circuit diagram CM30TF-24H DIODE EVP 25 igbt 30A

    CM50TF-12H

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM50TF-12H MEDIUM POWER SWITCHING USE INSULATED TYPE A B C BuP EuP BvP EvP BwP EwP P J N E u v D w N BuN EuN S - DIA. 2 TYP. BvN EvN M F R BwN EwN F R K Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of


    Original     		PDF CM50TF-12H CM50TF-12H

    600v 30a IGBT

    Abstract: CM30TF-24H IGBT 1200V 60A
    Text: MITSUBISHI IGBT MODULES CM30TF-24H MEDIUM POWER SWITCHING USE INSULATED TYPE A B C BuP EuP BvP EvP BwP EwP P J N E u v D w N BuN EuN S - DIA. 2 TYP. BvN EvN M F R BwN EwN F R L K Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of


    Original     		PDF CM30TF-24H 600v 30a IGBT CM30TF-24H IGBT 1200V 60A

    BUN DIODE

    Abstract: 600v 20a IGBT igbt 600v 20a CM20TF-24H
    Text: CM20TF-24H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Six-IGBT IGBTMOD H-Series Module 20 Amperes/1200 Volts A B Q Q R BuP P R EuP BvP BuN EuN BvN R EvP BwP EwP EvN BwN EwN P J U N S - DIA. (2 TYP.) V K H L W H E


    Original     		PDF CM20TF-24H Amperes/1200 BUN DIODE 600v 20a IGBT igbt 600v 20a CM20TF-24H

    CM30TF-24H

    Abstract: igbt 600V 30A
    Text: MITSUBISHI IGBT MODULES CM30TF-24H MEDIUM POWER SWITCHING USE INSULATED TYPE A B C BuP EuP BvP EvP BwP EwP P J N E u v D w N BuN EuN S - DIA. 2 TYP. BvN EvN M F R BwN EwN F R L K Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of


    Original     		PDF CM30TF-24H CM30TF-24H igbt 600V 30A

    BUN DIODE

    Abstract: DIODE EVP 28 CM50TF-12H bup transistor
    Text: CM50TF-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Six-IGBT IGBTMOD H-Series Module 50 Amperes/600 Volts A B C BuP EuP BvP EvP BwP EwP P J N E u v D w N BuN EuN S - DIA. (2 TYP.) BvN EvN M BwN EwN F R F R K R


    Original     		PDF CM50TF-12H Amperes/600 20-25kHz) BUN DIODE DIODE EVP 28 CM50TF-12H bup transistor

    buz 342 G

    Abstract: DIODE BUZ z347 BUP 312 diode z104 z349 z332a IGBT P213 DIODE BUZ 300 buz91a
    Text: Gehäuseübersicht Package Information N-Kanal Leistungstransistoren Forts. N Channel Power Transistors G D S G TO-220 AB VDS V 50 50 50 50 50 50 50 50 50 50 50 50 50 50 60 60 60 60 60 100 100 100 100 100 100 100 100 RDS(on) Ω 10 m 18 m 23 m 28 m 30 m


    Original     		PDF O-220 O-218 346S2 BUO-218 buz 342 G DIODE BUZ z347 BUP 312 diode z104 z349 z332a IGBT P213 DIODE BUZ 300 buz91a

    SIEMENS 1200

    Abstract: siemens dioden bup203 C67078-A4400-A2
    Text: SIEMENS IGBTLeistungstransistoren Bestellnummer Ordering code h LU Typ Type IGBT Power transistors A Gehäuse Package Bild Figure BUP 202 1000 12.0 C67078-A4401-A2 TO-220 AB 8b BUP 203 1000 21.0 C67078-A4402-A2 TO-220 AB 8b BUP 302 1000 12.0 C67078-A4205-A2


    OCR Scan     		PDF C67078-A4401-A2 C67078-A4402-A2 C67078-A4205-A2 C67078-A4202-A2 C67078-A4200-A2 O-220 O-218 SIEMENS 1200 siemens dioden bup203 C67078-A4400-A2

    bup transistor

    Abstract: siemens igbt ge 739 C67078-A4401-A2 BUP 202
    Text: SIEMENS IGBT Transistors BUP 202 BUP 302 • N channel • MOS input voltage-controlled • Low forward voltage drop • High switching speed • Very low tail current • Low temperature sensitivity • Avalanche-rated • Latch-up-free • Suitable free wheeling diode


    OCR Scan     		PDF O-220 C67078-A4401-A2 O-218 C67078-A4205-A2 202/BUP SIL02019 SIL02018 SII00325 bup transistor siemens igbt ge 739 C67078-A4401-A2 BUP 202

    BUP 307

    Abstract: transistor 304 transistor d 304 bup transistor bup307 transistor 307 bup 200 transistor
    Text: SIEMENS BUP 304 BUP 307 IGBT High Power Switch VCE = 1000 V /1 2 0 0 V = 25 A lc • • • • • • • • • N channel MOS input (voltage-controlled) Low forw ard voltage drop High sw itching speed Very low tail current Low tem perature sensitivity


    OCR Scan     		PDF O-218 7078-A 200-A 201-A 100ms BUP 307 transistor 304 transistor d 304 bup transistor bup307 transistor 307 bup 200 transistor

    7060a

    Abstract: TOP3 package bup transistor
    Text: S IE M E N S BUP 101 SIRET Siemens Ring Emitter Transistor VCE = 1000 V lc =15 A • • • N channel B rea kdo w n-p roo f Package: TO-218 AA TOP-3 ') Type Ordering code BUP 101 C 6 7060-A 1000-A 2 Maximum Ratings at T{ = 25 °C, unless otherw ise specified.


    OCR Scan     		PDF O-218 060-A 000-A 7060a TOP3 package bup transistor

    NPN Transistor 50A 400V

    Abstract: NPN 400V 40A BUP51 BUP52 bup transistor l82a BUP53 BUp54 LE17 400v 50A Transistor
    Text: SEMELAB BUP 53 NPN MULTI-EPITAXIAL TRANSISTOR MECHANICAL DATA Designed for high energy applications requiring robust fast switching devices D im ensions in m m FEATURES • LOW VCE s>t • FAST SWITCHING • SINGLE CHIP CONSTRUCTION • HIGH SWITCHING CURRENTS


    OCR Scan     		PDF 25Typ. NPN Transistor 50A 400V NPN 400V 40A BUP51 BUP52 bup transistor l82a BUP53 BUp54 LE17 400v 50A Transistor

    LS303

    Abstract: BUP 303 bup203
    Text: SIEMENS IGBT Transistors N channel MOS input voltage-controlled Low forward voltage drop High switching speed Very low tail current Low temperature sensitivity Avalanche-rated Latch-up-free Suitable free wheeling diode BYP 101 G E Type ^CE BUP 203 1000 V


    OCR Scan     		PDF

    TRANSISTOR JC

    Abstract: 748 transistor on transistor 304 transistor 307 bup304 bup transistor bup 200 transistor
    Text: SIEMENS IGBT Transistors • • • • • • • • • BUP 304 N channel MOS input voltage-controlled Low forward voltage drop High switching speed Very low tail current Low temperature sensitivity Avalanche-rated Latch-up-free Suitable free wheeling diode


    OCR Scan     		PDF O-218 C67078-A4200-A2 C67078-A4201-A2 TRANSISTOR JC 748 transistor on transistor 304 transistor 307 bup304 bup transistor bup 200 transistor

    bup transistor

    Abstract: bup 200 transistor
    Text: SIEMENS BUP 200 IGBT High Power Switch Preliminary Data VCE = 1200 V /c = 1.5 A • • • • • • • • • N channel MOS input (voltage-controlled) Low forw ard voltage drop High sw itching speed Very low tail current Low tem perature sensitivity


    OCR Scan     		PDF 7078-A 400-A bup transistor bup 200 transistor

    7078a

    Abstract: bup 200 transistor
    Text: SIEMENS IGBT High Power Switch BUP 202 Preliminary Data vCE = 1000 v lc = 8 A • • • • • • • • • N channel MOS in pu t (volta ge -controlle d) Low forw ard voltage drop High sw itching speed Very low tail current Low tem perature sensitivity


    OCR Scan     		PDF 078-A 401-A 7078a bup 200 transistor

    Untitled

    Abstract: No abstract text available
    Text: # w m s CM30TF-12H r Powerex, Inc., 200Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 S¡X~IGBT IGBTMOD H-Series Module 30 Amperes/600 Volts BuP EuP BvP EvP BwP EwP 50 4 0 ^ 0 4 r -1 S - DIA— (2 TYP.) BuN EuN i - i B w N E vN r-i — K— — H-


    OCR Scan     		PDF CM30TF-12H 200Hillis Amperes/600 00cne43

    BUN DIODE

    Abstract: No abstract text available
    Text: m u m ex Powerex, Inc., 200 Hlllls Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 |- U BuP EuP U BvP EvP D 8wP EwP l ;-G 4 o O n n 0 4 n n - m S - DIA— (2 TYP.) BuN BuN E EuN i—i BvN EvN r—I — K- CM20TF-24H SÍX-IGBT IGBTMOD H-Series Module


    OCR Scan     		PDF CM20TF-24H Amperes/1200 BUN DIODE

    leistungstransistoren

    Abstract: bup314d buz 342 G siemens 230 95 O BUP 307D BUZ,350 BUZ,271 BUP400D bup313d BUP314
    Text: SIEMENS Gehäuseübersicht Package Information N-Kanal Leistungstransistoren N Channel Power Transistors D i A PN \ ° s TO-220 AB *D S ^ D S o n V 50 50 50 50 50 50 50 50 50 50 50 50 50 50 60 60 60 60 60 100 100 100 100 100 100 100 100 Q 10 18 23 28 m


    OCR Scan     		PDF O-220 BUZ12A BUZ11S2 BUZ10S2 O-218 346S2 BUP410D leistungstransistoren bup314d buz 342 G siemens 230 95 O BUP 307D BUZ,350 BUZ,271 BUP400D bup313d BUP314