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    BUP30 Search Results

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    BUP30 Price and Stock

    Autonics Corporation BUP-30

    SENSOR, PHOTO, PLASTIC CASE, SLO
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    DigiKey BUP-30 Box 1
    • 1 $74
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    IndustrialeMart BUP-30

    SENSOR THROUGH-BEAM 30MM NPN
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    DigiKey BUP-30 Bag 1
    • 1 $74
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    Autonics Corporation BUP-30S

    SENSOR, PHOTO, PLASTIC CASE, SLO
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    DigiKey BUP-30S Box 1
    • 1 $77
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    IndustrialeMart BUP-30S

    SENSOR THROUGH-BEAM 30MM NPN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BUP-30S Bag 1
    • 1 $77
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    Autonics Corporation BUP-30-P

    SENSOR, PHOTO, PLASTIC CASE, SLO
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    DigiKey BUP-30-P Box 1
    • 1 $70
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    TME BUP-30-P 6 1
    • 1 $43.2
    • 10 $32.9
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    BUP30 Datasheets (37)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BUP30 Semelab Bi-Polar Transistors (CECC and High Rel) & High Energy Scan PDF
    BUP30 Semelab Silicon NPN Epitaxial Planar Transistor Scan PDF
    BUP30 Semelab Silicon NPN Epitaxial Planar Transistor Scan PDF
    BUP 300 Infineon Technologies High switching speed IGBT Original PDF
    BUP300 Infineon Technologies IGBT Original PDF
    BUP300 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUP 302 Infineon Technologies IGBT Chip, 1000V, TO-218AB, 3-Pin Original PDF
    BUP302 Infineon Technologies IGBT Original PDF
    BUP302 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUP302 Siemens IGBT Transistor Scan PDF
    BUP 303 Infineon Technologies TRANS IGBT CHIP N-CH 1000V 23A 3TO-218 AB Original PDF
    BUP303 Infineon Technologies IGBT Original PDF
    BUP303 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUP 304 Infineon Technologies TRANS IGBT CHIP N-CH 1000V 35A 3TO-218 AB Original PDF
    BUP304 Infineon Technologies IGBT Original PDF
    BUP304 Infineon Technologies IGBT Scan PDF
    BUP304 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUP305 Siemens IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode) Original PDF
    BUP305D Infineon Technologies IGBT With Antiparallel Diode Original PDF
    BUP305-D Infineon Technologies IGBT Duopack (IGBT with Antiparallel ... Original PDF

    BUP30 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IKW08T120

    Abstract: BUP305D
    Text: IKW08T120 TrenchStop Series ^ Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • Approx. 1.0V reduced VCE sat and 0.5V reduced VF compared to BUP305D Short circuit withstand time – 10µs


    Original
    PDF IKW08T120 BUP305D Jul-02 IKW08T120 BUP305D

    Untitled

    Abstract: No abstract text available
    Text: IGW08T120 q TrenchStop Series Low Loss IGBT in Trench and Fieldstop technology C • • • • • • • • • • Approx. 1.0V reduced VCE sat compared to BUP305D Short circuit withstand time – 10µs Designed for : - Frequency Converters - Uninterrupted Power Supply


    Original
    PDF IGW08T120 BUP305D

    RG81

    Abstract: IGW08T120 BUP305D
    Text: IGW08T120 TrenchStop Series ^ Low Loss IGBT in Trench and Fieldstop technology • • • • • • • • C Approx. 1.0V reduced VCE sat compared to BUP305D Short circuit withstand time – 10µs Designed for : G E - Frequency Converters - Uninterrupted Power Supply


    Original
    PDF IGW08T120 BUP305D P-TO-24nformation Jul-02 RG81 IGW08T120 BUP305D

    k08T120

    Abstract: No abstract text available
    Text: IKW08T120 TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C •           Approx. 1.0V reduced VCE sat and 0.5V reduced VF compared to BUP305D


    Original
    PDF IKW08T120 BUP305D k08T120

    IGW08T120

    Abstract: BUP305D BUP305-D mj04
    Text: Preliminary IGW08T120 TrenchStoP Series Low Loss IGBT in Trench and Fieldstop technology C • • • • • Approx. 1.0V reduced VCE sat compared to BUP305D Short circuit withstand time – 10µs Designed for : - Frequency Converters - Uninterrupted Power Supply


    Original
    PDF IGW08T120 BUP305D 15nformation Sep-03 IGW08T120 BUP305D BUP305-D mj04

    BUP305D

    Abstract: IKW08T120
    Text: IKW08T120 TrenchStop Series ^ Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • Approx. 1.0V reduced VCE sat and 0.5V reduced VF compared to BUP305D Short circuit withstand time – 10µs


    Original
    PDF IKW08T120 BUP305D Oct-03 BUP305D IKW08T120

    integrated circuit MAR 521

    Abstract: No abstract text available
    Text: Preliminary IKW08T120 TrenchStop Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • C • • • Approx. 1.0V reduced VCE sat and 0.5V reduced VF compared to BUP305D Short circuit withstand time – 10µs


    Original
    PDF IKW08T120 BUP305D Mar-02 integrated circuit MAR 521

    k08t120

    Abstract: BUP30 k08t12
    Text: IKW08T120 TrenchStop Series ^ Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • Approx. 1.0V reduced VCE sat and 0.5V reduced VF compared to BUP305D


    Original
    PDF IKW08T120 BUP305D k08t120 BUP30 k08t12

    Untitled

    Abstract: No abstract text available
    Text: IKW08T120 TrenchStop Series ^ Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • Approx. 1.0V reduced VCE sat and 0.5V reduced VF compared to BUP305D


    Original
    PDF IKW08T120 BUP305D

    Untitled

    Abstract: No abstract text available
    Text: IGW08T120 q TrenchStop Series Low Loss IGBT in Trench and Fieldstop technology C • • • • • • • • • • Approx. 1.0V reduced VCE sat compared to BUP305D Short circuit withstand time – 10µs Designed for : - Frequency Converters - Uninterrupted Power Supply


    Original
    PDF IGW08T120 BUP305D

    k08T120

    Abstract: IKW08T120 BUP305D PG-TO-247-3 diode of 5a 5v 10kHz RG81 mj04
    Text: IKW08T120 TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • Approx. 1.0V reduced VCE sat and 0.5V reduced VF compared to BUP305D


    Original
    PDF IKW08T120 BUP305D k08T120 IKW08T120 BUP305D PG-TO-247-3 diode of 5a 5v 10kHz RG81 mj04

    Untitled

    Abstract: No abstract text available
    Text: Preliminary IGW08T120 TrenchStoP Series Low Loss IGBT in Trench and Fieldstop technology C • • • • • Approx. 1.0V reduced VCE sat compared to BUP305D Short circuit withstand time – 10µs Designed for : - Frequency Converters - Uninterrupted Power Supply


    Original
    PDF IGW08T120 BUP305D O-247AC Q67040-S4513 IGW08T120 Jan-02

    k08T120

    Abstract: No abstract text available
    Text: IKW08T120 TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • Approx. 1.0V reduced VCE sat and 0.5V reduced VF compared to BUP305D


    Original
    PDF IKW08T120 BUP305D k08T120

    k08T120

    Abstract: 5M MARKING CODE DIODE 5A 100V IKW08T120 BUP305D PG-TO-247-3-21
    Text: IKW08T120 TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • Approx. 1.0V reduced VCE sat and 0.5V reduced VF compared to BUP305D


    Original
    PDF IKW08T120 BUP305D k08T120 5M MARKING CODE DIODE 5A 100V IKW08T120 BUP305D PG-TO-247-3-21

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original
    PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    2kW flyback PFC

    Abstract: transistor SMD DK -RN SMPS flyback 2kW UPS SIEMENS UMAX 450W SMPS smps 450W 2kw mosfet PFC 5kw P-CHANNEL 25A TO-247 POWER MOSFET siemens soft starter
    Text: Semiconductor Group – find us at an office near you AUS Siemens Ltd., Head Office 544 Church Street Richmond Melbourne , Vic. 3121 ట (+61) 3-9420 7111 Fax (+61) 3-9420 72 75 Email: mark.walsh@siemens.com.au D Siemens AG Von-der-Tann-Straße 30 D-90439 Nürnberg


    Original
    PDF D-90439 D-70499 D-81679 B-1060 N60S5 O-220 OT-223 2kW flyback PFC transistor SMD DK -RN SMPS flyback 2kW UPS SIEMENS UMAX 450W SMPS smps 450W 2kw mosfet PFC 5kw P-CHANNEL 25A TO-247 POWER MOSFET siemens soft starter

    IGBT K 40 T 1202

    Abstract: 40 t 1202 igbt BUP306D
    Text: SIEMENS BUP306D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Type BUP 306D VCE h 1200V 23A Pin 1 Pin 2 Pin 3 G C E Package Ordering Code


    OCR Scan
    PDF O-218AB BUP306D Q67040-A4222-A2 SII003 IGBT K 40 T 1202 40 t 1202 igbt BUP306D

    BUP30

    Abstract: LE17
    Text: _fi_ 37E SEMELAB L T» 0133167 D SEMELAB r-. [j ; SMtß ' /y s r - BUP30 SILICO N NPN MECHANICAL DATA EPITAXIAL PLANAR Dimensions in mm FEATURES • VERY LOW Vce SAT • HIGH GAIN AT HIGH CURRENT • VERY FAST SWITCHING • PNP COMPLEMENT BUP 31


    OCR Scan
    PDF BUP30 I-10-3-Â 55to150Â 00DD1SS BUP30 LE17

    BUZ MOSFET

    Abstract: mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S
    Text: SIEMENS Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs U ♦ BS 107 200 26.00 0.8. 2.0 0.13 TO-92 BSS 192 -240 20.00 -2.0. .-0.8 BS 170 60 5.00 0.8. 2.0 0.30 TO-92 BSS 229 250 100.00 -1.8. .-0.7 0.07 TO-92 BSO 307N 30 0.075 1.2. 2.0 4.2 SO-8


    OCR Scan
    PDF 615NV BSP318S BUZ MOSFET mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S

    BUL52A

    Abstract: SOT93 BUP43 BUP47 BUP49 BUP53 dd453 BUL50A BUL50B BUL51A
    Text: 4AE D • fll331fl7 0DDD4S3 IDA ■ SMLB SEMELAB LTD T-Z?-o BI-POLAR TRANSISTORS (CECC AND HIGH REL & HIGH ENERGY Type Number Rel Code HR HR HR HR HR HR HR HR HR HR HR HR UR HR CECC CECC CECC REQ REQ HR HR HR HR CECC CECC CECC CECC Pol NPN NPN NPN NPN NPN


    OCR Scan
    PDF DD453 BUL50A S0T93 10min BUL50B T0220 BUL51A 30min DUL51B BUL52A SOT93 BUP43 BUP47 BUP49 BUP53 BUL50A BUL50B BUL51A

    TRANSISTOR JC

    Abstract: 748 transistor on transistor 304 transistor 307 bup304 bup transistor bup 200 transistor
    Text: SIEMENS IGBT Transistors • • • • • • • • • BUP 304 N channel MOS input voltage-controlled Low forward voltage drop High switching speed Very low tail current Low temperature sensitivity Avalanche-rated Latch-up-free Suitable free wheeling diode


    OCR Scan
    PDF O-218 C67078-A4200-A2 C67078-A4201-A2 TRANSISTOR JC 748 transistor on transistor 304 transistor 307 bup304 bup transistor bup 200 transistor

    BUP309

    Abstract: siemens igbt
    Text: SIEMENS BUP 309 IGBT Preliminary data • High switching speed • Low tail current • Latch-up free • Avalanche rated • Low forward voltage drop Remark: The TO-218 AB case doesn't solve the standards VDE 0110 and UL 508 for creeping distance Pin 1 Pin 2


    OCR Scan
    PDF O-218 O-211200 BUP309 BUP309 siemens igbt

    BUP30

    Abstract: BUP31 A31M LE17 IHM planar
    Text: SEMELAB LTD 37E » 0133107 SEM ELAB IH M vy s 1 s m <3 BUP31 NEW PRODUCT S IL IC O N PNP MECHANICAL DATA EPITAXIAL PLANAR . 1 0 .3_ max. 3.6 2.8 ¥ 1.3 ¿.5max. r-F 5.9 min. ¡.i 15.8 max. 10 FEATURES i • Very low V ce sat • High gain at high current • Very fast switching


    OCR Scan
    PDF 00DD12b BUP31 BUP30 O-220 00D01S7 2VTO-220 10AmpsvCE 20Amps 10AmpslB BUP30 A31M LE17 IHM planar

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BUP 307D IGBT W ith Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed 1 • Low tail current VPT05156 2 3 • Latch-up free • Including fast free-wheel diode Type BUP 307D »'CE h 1200V 35A Pin 1 Pin 2 Pin 3


    OCR Scan
    PDF O-218