Untitled
Abstract: No abstract text available
Text: IKW15T120 TrenchStop Series ^ Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • Approx. 1.0V reduced VCE sat and 0.5V reduced VF compared to BUP313D
|
Original
|
IKW15T120
BUP313D
|
PDF
|
K15T120
Abstract: K15T120 igbt k15t120 equivalent IKW15T120 BUP313D PG-TO-247-3-21 RG 56
Text: IKW15T120 TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • Approx. 1.0V reduced VCE sat and 0.5V reduced VF compared to BUP313D
|
Original
|
IKW15T120
BUP313D
K15T120
K15T120 igbt
k15t120 equivalent
IKW15T120
BUP313D
PG-TO-247-3-21
RG 56
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IKW15T120 TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C • Approx. 1.0V reduced VCE sat and 0.5V reduced VF compared to BUP313D
|
Original
|
IKW15T120
BUP313D
|
PDF
|
K15T120
Abstract: K15T120 igbt IKW15T120 BUP313D PG-TO-247-3
Text: IKW15T120 TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • Approx. 1.0V reduced VCE sat and 0.5V reduced VF compared to BUP313D
|
Original
|
IKW15T120
BUP313D
K15T120
K15T120 igbt
IKW15T120
BUP313D
PG-TO-247-3
|
PDF
|
K15T120
Abstract: K15T120 igbt k15t120 equivalent
Text: IKW15T120 TrenchStop Series ^ Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • Approx. 1.0V reduced VCE sat and 0.5V reduced VF compared to BUP313D
|
Original
|
IKW15T120
BUP313D
K15T120
K15T120 igbt
k15t120 equivalent
|
PDF
|
IKW15T120
Abstract: BUP313D Q67040-S4516 TR 104
Text: IKW15T120 TrenchStop Series ^ Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • Approx. 1.0V reduced VCE sat and 0.5V reduced VF compared to BUP313D Short circuit withstand time – 10µs
|
Original
|
IKW15T120
BUP313D
Jul-02
IKW15T120
BUP313D
Q67040-S4516
TR 104
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IKW15T120 TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • Approx. 1.0V reduced VCE sat and 0.5V reduced VF compared to BUP313D
|
Original
|
IKW15T120
BUP313D
|
PDF
|
BUP313
Abstract: bup313d integrated circuit MAR 521
Text: Preliminary IKW15T120 TrenchStop Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • C • • • Approx. 1.0V reduced VCE sat and 0.5V reduced VF compared to BUP313D Short circuit withstand time – 10µs
|
Original
|
IKW15T120
BUP313D
Mar-02
BUP313
integrated circuit MAR 521
|
PDF
|
HCPL-316J
Abstract: hcpl-316j dip type HCPL316J IC A 3120 igbt drive industrial application of electric drives 3120 v IGBT DRIVER 316j A 788J HCPL-788J AN1252
Text: Variable Speed Drive Applications in the High-power Industrial Market Application Note 1253 High-power Industrial Market The high power electric drive and motor market power ratings of 75 kW or higher is poised to see a continued period of strong growth. High power rated electric
|
Original
|
HCPL-316J
5989-1054EN
HCPL-316J
hcpl-316j dip type
HCPL316J
IC A 3120 igbt drive
industrial application of electric drives
3120 v IGBT DRIVER
316j
A 788J
HCPL-788J
AN1252
|
PDF
|
SGH80N60RUFD
Abstract: bup314 equivalent bup314d SGH30N60UFD SGU06N60 BUP314 motorola diode cross reference mgy20n120d IXDH30N120AU1 SGP15N120
Text: Infineon Technologies Cross Reference List Fast IGBT & DuoPack Company Product Name Fairchild * Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*)
|
Original
|
SGR2N60UFD
SGP10N60RUF
SGP10N60RUFD
SGH10N60RUFD
SGW10N60RUFD
SGP06N60
SKB10N60
BUP400D
SGB15N60
SGH80N60RUFD
bup314 equivalent
bup314d
SGH30N60UFD
SGU06N60
BUP314
motorola diode cross reference
mgy20n120d
IXDH30N120AU1
SGP15N120
|
PDF
|
IGBT 200A 1200V
Abstract: T0247 T0220AB BUP313D IGBT IRG4BC20KD igbt 20A 1200v IGBT 1200V 60A T0247A BUP314D MG50Q2YS40
Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi h MOflynM IGBT b an^aBMTHOM nop^AKe BUP203 (T0220) KpaTKoe onMcaHMe MG50Q2YS40 BUP212 BUP213 BUP313 BUP313D BUP314 BUP314D GT20D101-T0s GT20D201-T0s HGTG12N60A4D HGTG30N60B3D
|
OCR Scan
|
bup203
t0220)
BUP212
BUP213
BUP313
BUP313D
BUP314
BUP314D
GT20D101-T0s
GT20D201-T0s
IGBT 200A 1200V
T0247
T0220AB
BUP313D
IGBT IRG4BC20KD
igbt 20A 1200v
IGBT 1200V 60A
T0247A
BUP314D
MG50Q2YS40
|
PDF
|
BUP313D
Abstract: No abstract text available
Text: SIEMENS BUP313D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Type VC E BLIP 313D 1200V 32A h Package Ordering Code TO-218 AB Q67040-A4228-A2
|
OCR Scan
|
BUP313D
O-218
Q67040-A4228-A2
Dec-02-1996
BUP313D
|
PDF
|
leistungstransistoren
Abstract: bup314d buz 342 G siemens 230 95 O BUP 307D BUZ,350 BUZ,271 BUP400D bup313d BUP314
Text: SIEMENS Gehäuseübersicht Package Information N-Kanal Leistungstransistoren N Channel Power Transistors D i A PN \ ° s TO-220 AB *D S ^ D S o n V 50 50 50 50 50 50 50 50 50 50 50 50 50 50 60 60 60 60 60 100 100 100 100 100 100 100 100 Q 10 18 23 28 m
|
OCR Scan
|
O-220
BUZ12A
BUZ11S2
BUZ10S2
O-218
346S2
BUP410D
leistungstransistoren
bup314d
buz 342 G
siemens 230 95 O
BUP 307D
BUZ,350
BUZ,271
BUP400D
bup313d
BUP314
|
PDF
|
BUZ MOSFET
Abstract: mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S
Text: SIEMENS Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs U ♦ BS 107 200 26.00 0.8. 2.0 0.13 TO-92 BSS 192 -240 20.00 -2.0. .-0.8 BS 170 60 5.00 0.8. 2.0 0.30 TO-92 BSS 229 250 100.00 -1.8. .-0.7 0.07 TO-92 BSO 307N 30 0.075 1.2. 2.0 4.2 SO-8
|
OCR Scan
|
615NV
BSP318S
BUZ MOSFET
mosfet BUZ 326
BUZ MOSFET 334
spd14n05
mosfet BUZ 349
mosfet buz 90a
BUZ 100 MOSFET
bup202
BUZ MOSFET 102s
BUZ MOSFET 111S
|
PDF
|
|
|
BUP 312
Abstract: buz 91 f BUP 303 IGBT DIODE BUZ 537 BUP 203
Text: SIEMENS Typenübersicht Selection Guide Leistungstransistoren Typ Type • BUZ 10 ■ BUZ 10L ■ BUZ10S2 ■ BUZ 11 ■ BUZ11A ■ BUZ11S2 ■ BUZ 11 AL ■ BUZ 12 ■ BUZ12A ■ BUZ 12AL BUZ 20 BUZ 21 BUZ 21L BUZ 22 BUZ 30A BUZ 31 BUZ 31L BUZ 32 BUZ 40B
|
OCR Scan
|
BUZ10S2
BUZ11A
BUZ11S2
BUZ12A
O-220
O-218
BUP 312
buz 91 f
BUP 303 IGBT
DIODE BUZ 537
BUP 203
|
PDF
|
P 313D
Abstract: BUP313D
Text: SIEMENS BUP 313D IGBT W ith Antlparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Type VfcE h 1200V 32A BUP 313D P in i Pin 2 Pin 3 G C E Package
|
OCR Scan
|
O-218
Q67040-A4228-A2
-55tances
P 313D
BUP313D
|
PDF
|
