Untitled
Abstract: No abstract text available
Text: SiR496DP Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 20 ID (A)a, g 0.0045 at VGS = 10 V 35g 0.0058 at VGS = 4.5 V 35g Qg (Typ.) 13.2 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET
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Original
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SiR496DP
2002/95/EC
SiR496DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product SiR330DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, g 0.0056 at VGS = 10 V 35g 0.0075 at VGS = 4.5 V 35g VDS (V) 30 Qg (Typ.) 11.2 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21
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Original
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SiR330DP
2002/95/EC
SiR330DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product SiR482DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, g 0.0056 at VGS = 10 V 35g 0.0075 at VGS = 4.5 V 35g VDS (V) 30 Qg (Typ.) 12 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition
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Original
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SiR482DP
2002/95/EC
SiR482DP-T1-GE3
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: SiR496DP Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 20 ID (A)a, g 0.0045 at VGS = 10 V 35g 0.0058 at VGS = 4.5 V 35g Qg (Typ.) 13.2 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition
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Original
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SiR496DP
2002/95/EC
SiR496DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product SiR330DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, g 0.0056 at VGS = 10 V 35g 0.0075 at VGS = 4.5 V 35g VDS (V) 30 Qg (Typ.) 11.2 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21
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Original
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SiR330DP
2002/95/EC
SiR330DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product SiR482DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, g 0.0056 at VGS = 10 V 35g 0.0075 at VGS = 4.5 V 35g VDS (V) 30 Qg (Typ.) 12 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition
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Original
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SiR482DP
2002/95/EC
SiR482DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product SiR330DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, g 0.0056 at VGS = 10 V 35g 0.0075 at VGS = 4.5 V 35g VDS (V) 30 Qg (Typ.) 11.2 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21
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Original
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SiR330DP
2002/95/EC
SiR330DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product Si7784DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.006 at VGS = 10 V 35g 0.0082 at VGS = 4.5 V 35g VDS (V) 30 Qg (Typ.) 13.7 nC S • Synchronous Rectification • DC/DC - High-Side Switch 5.15 mm
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Original
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Si7784DP
Si7784DP-T1-GE3
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product SiR330DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, g 0.0056 at VGS = 10 V 35g 0.0075 at VGS = 4.5 V 35g VDS (V) 30 Qg (Typ.) 11.2 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21
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Original
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SiR330DP
2002/95/EC
SiR330DP-T1-GE3
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product Si7784DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.006 at VGS = 10 V 35g 0.0082 at VGS = 4.5 V 35g VDS (V) 30 Qg (Typ.) 13.7 nC S • Synchronous Rectification • DC/DC - High-Side Switch 5.15 mm
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Original
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Si7784DP
Si7784DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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SiR496DP
Abstract: No abstract text available
Text: SiR496DP Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 20 ID (A)a, g 0.0045 at VGS = 10 V 35g 0.0058 at VGS = 4.5 V 35g Qg (Typ.) 13.2 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET
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Original
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SiR496DP
2002/95/EC
SiR496DP-T1-GE3
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: SiR496DP Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 20 ID (A)a, g 0.0045 at VGS = 10 V 35g 0.0058 at VGS = 4.5 V 35g Qg (Typ.) 13.2 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET
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Original
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SiR496DP
2002/95/EC
SiR496DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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SIS426DN-T1-GE3
Abstract: SiS426DN
Text: New Product SiS426DN Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)f 0.0042 at VGS = 10 V 35g 0.0058 at VGS = 4.5 V g VDS (V) 20 35 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested
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Original
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SiS426DN
SiS426DN-T1-GE3
150lectual
18-Jul-08
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PDF
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SiS426DN
Abstract: SiS426DN-T1-GE3
Text: SiS426DN Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)f 0.0045 at VGS = 10 V 35g 0.0058 at VGS = 4.5 V 35g VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested
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Original
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SiS426DN
2002/95/EC
SiS426DN-T1-GE3
18-Jul-08
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PDF
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Untitled
Abstract: No abstract text available
Text: SiR496DP Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 20 ID (A)a, g 0.0045 at VGS = 10 V 35g 0.0058 at VGS = 4.5 V 35g Qg (Typ.) 13.2 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET
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Original
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SiR496DP
2002/95/EC
SiR496DP-T1-GE3
18-Jul-08
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PDF
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SiR496DP
Abstract: No abstract text available
Text: New Product SiR496DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0042 at VGS = 10 V 35g 0.0058 at VGS = 4.5 V 35g VDS (V) 20 Qg (Typ.) 13.2 nC S COMPLIANT • High Current DC/DC - Low-Side Switch • POL
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Original
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SiR496DP
SiR496DP-T1-GE3
18-Jul-08
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PDF
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MA 68698
Abstract: Si7718DN
Text: New Product Si7718DN Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)f 0.006 at VGS = 10 V 35g VDS (V) 30 0.0082 at VGS = 4.5 V 35 • • • • • Qg (Typ.) 13.7 nC g PowerPAK 1212-8 • High Side Switch - VRM - POL
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Original
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Si7718DN
Si7718DN-T1-GE3
18-Jul-08
MA 68698
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PDF
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Si7784DP
Abstract: SI7784DP-T1-GE3 SI778
Text: New Product Si7784DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.006 at VGS = 10 V 35g 0.0082 at VGS = 4.5 V 35g VDS (V) 30 Qg (Typ.) 13.7 nC S • Synchronous Rectification • DC/DC - High-Side Switch 5.15 mm
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Original
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Si7784DP
Si7784DP-T1-GE3
18-Jul-08
SI778
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PDF
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SiR496DP
Abstract: No abstract text available
Text: SiR496DP Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 20 ID (A)a, g 0.0045 at VGS = 10 V 35g 0.0058 at VGS = 4.5 V 35g Qg (Typ.) 13.2 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET
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Original
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SiR496DP
2002/95/EC
SiR496DP-T1-GE3
11-Mar-11
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PDF
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Si7784DP
Abstract: Si7784DP-T1-GE3 si7784
Text: New Product Si7784DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.006 at VGS = 10 V 35g 0.0082 at VGS = 4.5 V 35g VDS (V) 30 Qg (Typ.) 13.7 nC S • Synchronous Rectification • DC/DC - High-Side Switch 5.15 mm
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Original
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Si7784DP
Si7784DP-T1-GE3
11-Mar-11
si7784
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PDF
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Si7718DN
Abstract: si7718
Text: New Product Si7718DN Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)f 0.006 at VGS = 10 V 35g VDS (V) 30 0.0082 at VGS = 4.5 V 35 • • • • • Qg (Typ.) 13.7 nC g PowerPAK 1212-8 • High Side Switch - VRM - POL
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Original
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Si7718DN
Si7718DN-T1-GE3
11-Mar-11
si7718
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product SiJ484DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0063 at VGS = 10 V 35g 0.0082 at VGS = 4.5 V 35g VDS (V) 30 Qg (Typ.) 13.7 nC PowerPAK SO-8L Single • Halogen-free According to IEC 61249-2-21
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Original
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SiJ484DP
2002/95/EC
SiJ484DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product SiJ484DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0063 at VGS = 10 V 35g 0.0082 at VGS = 4.5 V 35g VDS (V) 30 Qg (Typ.) 13.7 nC PowerPAK SO-8L Single • Halogen-free According to IEC 61249-2-21
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Original
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SiJ484DP
2002/95/EC
SiJ484DP-T1-GE3
11-Mar-11
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PDF
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bosch piezoelectric sensor
Abstract: Piezoelectric Sensor heart UAA 180 air mass bosch amplifier for piezo sensor impact sensor Piezo sensor Bosch Piezoelectric sensor block diagram piezoelectric pressure charge amplifier
Text: 18 Acceleration sensors BOSCH Piezoelectric acceleration sensors Measurement of acceleration up to 35g 7 / O ’ I I 2> - o - 1 3 L ^ 5 ^ • Acceleration measurement by means of piezoelectric spring element bimorphous strips • Low temperature-dependence
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OCR Scan
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PDF
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