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    BUT 35G Search Results

    BUT 35G Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    MD8039AHL/R Rochester Electronics LLC 8039AHL - 8-But Microcontroller Visit Rochester Electronics LLC Buy
    SF Impression Pixel

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    Standex-Meder Electronics 2604111034

    Hall Sensor, Switch Function 3-24V Supply, 35G Operate, 25G Release
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    EyeCap International Ltd EYECAP-SIT(A)35G

    Insulated Terminal Cap - Type A, SIT - Solderless Terminal Lugs Type - 35mm² - Green.
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    MG Chemicals 4860P-35G

    PasteClean Syringe Sn63Pb37 183°C
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    Matrix Orbital EVE2-35G-BLM-TPC

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    Amphenol Industrial Operations 71-580266-35G

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    BUT 35G Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SiR496DP Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 20 ID (A)a, g 0.0045 at VGS = 10 V 35g 0.0058 at VGS = 4.5 V 35g Qg (Typ.) 13.2 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET


    Original
    SiR496DP 2002/95/EC SiR496DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR330DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, g 0.0056 at VGS = 10 V 35g 0.0075 at VGS = 4.5 V 35g VDS (V) 30 Qg (Typ.) 11.2 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original
    SiR330DP 2002/95/EC SiR330DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR482DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, g 0.0056 at VGS = 10 V 35g 0.0075 at VGS = 4.5 V 35g VDS (V) 30 Qg (Typ.) 12 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition


    Original
    SiR482DP 2002/95/EC SiR482DP-T1-GE3 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiR496DP Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 20 ID (A)a, g 0.0045 at VGS = 10 V 35g 0.0058 at VGS = 4.5 V 35g Qg (Typ.) 13.2 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition


    Original
    SiR496DP 2002/95/EC SiR496DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR330DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, g 0.0056 at VGS = 10 V 35g 0.0075 at VGS = 4.5 V 35g VDS (V) 30 Qg (Typ.) 11.2 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original
    SiR330DP 2002/95/EC SiR330DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR482DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, g 0.0056 at VGS = 10 V 35g 0.0075 at VGS = 4.5 V 35g VDS (V) 30 Qg (Typ.) 12 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition


    Original
    SiR482DP 2002/95/EC SiR482DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR330DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, g 0.0056 at VGS = 10 V 35g 0.0075 at VGS = 4.5 V 35g VDS (V) 30 Qg (Typ.) 11.2 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original
    SiR330DP 2002/95/EC SiR330DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7784DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.006 at VGS = 10 V 35g 0.0082 at VGS = 4.5 V 35g VDS (V) 30 Qg (Typ.) 13.7 nC S • Synchronous Rectification • DC/DC - High-Side Switch 5.15 mm


    Original
    Si7784DP Si7784DP-T1-GE3 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR330DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, g 0.0056 at VGS = 10 V 35g 0.0075 at VGS = 4.5 V 35g VDS (V) 30 Qg (Typ.) 11.2 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original
    SiR330DP 2002/95/EC SiR330DP-T1-GE3 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7784DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.006 at VGS = 10 V 35g 0.0082 at VGS = 4.5 V 35g VDS (V) 30 Qg (Typ.) 13.7 nC S • Synchronous Rectification • DC/DC - High-Side Switch 5.15 mm


    Original
    Si7784DP Si7784DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    SiR496DP

    Abstract: No abstract text available
    Text: SiR496DP Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 20 ID (A)a, g 0.0045 at VGS = 10 V 35g 0.0058 at VGS = 4.5 V 35g Qg (Typ.) 13.2 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET


    Original
    SiR496DP 2002/95/EC SiR496DP-T1-GE3 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiR496DP Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 20 ID (A)a, g 0.0045 at VGS = 10 V 35g 0.0058 at VGS = 4.5 V 35g Qg (Typ.) 13.2 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET


    Original
    SiR496DP 2002/95/EC SiR496DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    SIS426DN-T1-GE3

    Abstract: SiS426DN
    Text: New Product SiS426DN Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)f 0.0042 at VGS = 10 V 35g 0.0058 at VGS = 4.5 V g VDS (V) 20 35 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested


    Original
    SiS426DN SiS426DN-T1-GE3 150lectual 18-Jul-08 PDF

    SiS426DN

    Abstract: SiS426DN-T1-GE3
    Text: SiS426DN Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)f 0.0045 at VGS = 10 V 35g 0.0058 at VGS = 4.5 V 35g VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original
    SiS426DN 2002/95/EC SiS426DN-T1-GE3 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiR496DP Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 20 ID (A)a, g 0.0045 at VGS = 10 V 35g 0.0058 at VGS = 4.5 V 35g Qg (Typ.) 13.2 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET


    Original
    SiR496DP 2002/95/EC SiR496DP-T1-GE3 18-Jul-08 PDF

    SiR496DP

    Abstract: No abstract text available
    Text: New Product SiR496DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0042 at VGS = 10 V 35g 0.0058 at VGS = 4.5 V 35g VDS (V) 20 Qg (Typ.) 13.2 nC S COMPLIANT • High Current DC/DC - Low-Side Switch • POL


    Original
    SiR496DP SiR496DP-T1-GE3 18-Jul-08 PDF

    MA 68698

    Abstract: Si7718DN
    Text: New Product Si7718DN Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)f 0.006 at VGS = 10 V 35g VDS (V) 30 0.0082 at VGS = 4.5 V 35 • • • • • Qg (Typ.) 13.7 nC g PowerPAK 1212-8 • High Side Switch - VRM - POL


    Original
    Si7718DN Si7718DN-T1-GE3 18-Jul-08 MA 68698 PDF

    Si7784DP

    Abstract: SI7784DP-T1-GE3 SI778
    Text: New Product Si7784DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.006 at VGS = 10 V 35g 0.0082 at VGS = 4.5 V 35g VDS (V) 30 Qg (Typ.) 13.7 nC S • Synchronous Rectification • DC/DC - High-Side Switch 5.15 mm


    Original
    Si7784DP Si7784DP-T1-GE3 18-Jul-08 SI778 PDF

    SiR496DP

    Abstract: No abstract text available
    Text: SiR496DP Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 20 ID (A)a, g 0.0045 at VGS = 10 V 35g 0.0058 at VGS = 4.5 V 35g Qg (Typ.) 13.2 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET


    Original
    SiR496DP 2002/95/EC SiR496DP-T1-GE3 11-Mar-11 PDF

    Si7784DP

    Abstract: Si7784DP-T1-GE3 si7784
    Text: New Product Si7784DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.006 at VGS = 10 V 35g 0.0082 at VGS = 4.5 V 35g VDS (V) 30 Qg (Typ.) 13.7 nC S • Synchronous Rectification • DC/DC - High-Side Switch 5.15 mm


    Original
    Si7784DP Si7784DP-T1-GE3 11-Mar-11 si7784 PDF

    Si7718DN

    Abstract: si7718
    Text: New Product Si7718DN Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)f 0.006 at VGS = 10 V 35g VDS (V) 30 0.0082 at VGS = 4.5 V 35 • • • • • Qg (Typ.) 13.7 nC g PowerPAK 1212-8 • High Side Switch - VRM - POL


    Original
    Si7718DN Si7718DN-T1-GE3 11-Mar-11 si7718 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiJ484DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0063 at VGS = 10 V 35g 0.0082 at VGS = 4.5 V 35g VDS (V) 30 Qg (Typ.) 13.7 nC PowerPAK SO-8L Single • Halogen-free According to IEC 61249-2-21


    Original
    SiJ484DP 2002/95/EC SiJ484DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiJ484DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0063 at VGS = 10 V 35g 0.0082 at VGS = 4.5 V 35g VDS (V) 30 Qg (Typ.) 13.7 nC PowerPAK SO-8L Single • Halogen-free According to IEC 61249-2-21


    Original
    SiJ484DP 2002/95/EC SiJ484DP-T1-GE3 11-Mar-11 PDF

    bosch piezoelectric sensor

    Abstract: Piezoelectric Sensor heart UAA 180 air mass bosch amplifier for piezo sensor impact sensor Piezo sensor Bosch Piezoelectric sensor block diagram piezoelectric pressure charge amplifier
    Text: 18 Acceleration sensors BOSCH Piezoelectric acceleration sensors Measurement of acceleration up to 35g 7 / O ’ I I 2> - o - 1 3 L ^ 5 ^ • Acceleration measurement by means of piezoelectric spring element bimorphous strips • Low temperature-dependence


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