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    Vishay Siliconix SIR330DP-T1-GE3

    MOSFET N-CH 30V 35A PPAK SO-8
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    DigiKey SIR330DP-T1-GE3 Reel 3,000
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    SIR330DP-T1-GE3 Cut Tape 1
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    SIR330DP-T1-GE3 Digi-Reel 1
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    Vishay Intertechnologies SIR330DP-T1-GE3

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    Bristol Electronics SIR330DP-T1-GE3 2,880
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    SIR330DP Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIR330DP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 35A 8SOIC Original PDF

    SIR330DP Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: New Product SiR330DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, g 0.0056 at VGS = 10 V 35g 0.0075 at VGS = 4.5 V 35g VDS (V) 30 Qg (Typ.) 11.2 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original     		PDF SiR330DP 2002/95/EC SiR330DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR330DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, g 0.0056 at VGS = 10 V 35g 0.0075 at VGS = 4.5 V 35g VDS (V) 30 Qg (Typ.) 11.2 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original     		PDF SiR330DP 2002/95/EC SiR330DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    23342

    Abstract: 67176 rs+346-671
    Text: SiR330DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF SiR330DP AN609, 5653m 4656m 4560m 1107m 8703m 5256m 4179m 23342 67176 rs+346-671

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiR330DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiR330DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR330DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, g 0.0056 at VGS = 10 V 35g 0.0075 at VGS = 4.5 V 35g VDS (V) 30 Qg (Typ.) 11.2 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original     		PDF SiR330DP 2002/95/EC SiR330DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR330DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, g 0.0056 at VGS = 10 V 35g 0.0075 at VGS = 4.5 V 35g VDS (V) 30 Qg (Typ.) 11.2 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original     		PDF SiR330DP 2002/95/EC SiR330DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR330DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, g 0.0056 at VGS = 10 V 35g 0.0075 at VGS = 4.5 V 35g VDS (V) 30 Qg (Typ.) 11.2 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original     		PDF SiR330DP 2002/95/EC SiR330DP-T1-GE3 11-Mar-11

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836