DTS517
Abstract: BUV28A
Text: POWER SILICON TRANSISTORS Item Number >C Part Number Manufacturer Type Max A V(8R)CEO Of) PD Max ON) hFE fT 'CBO Max t0N Max Min (HZ) (A) (s) r (CE)ut Max Toper Max (Ohms) (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . .15
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SDT7207
SDT7612
2N2229
2N3473
2N2233
2N3477
SDT12201
DTS517
BUV28A
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TRANSISTOR DATASHEET D1555
Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
Text: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440
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2N109
2N1304
2N1305
2N1307
2N1613
2N1711
2N1893
2N2102
2N2148
2N2165
TRANSISTOR DATASHEET D1555
d1555 transistor
TRANSISTOR D1651
D1555
D1557
D1554
d1651
transistor s1854
transistor d1555
transistor d1878
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BUV28A
Abstract: IR517 2N1813 BU107
Text: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 25 30 >= 40 50 g~~~g~ ~~~ 60 70 80 90 NtnAme~ml 10 10 10 10 10 10 10 10 10 10 200 200 200 200 200 200 200 200 200 200 ~g ~~~ 40 40 40 40 80 80 100 100 350 350 ~g~:~~g~ ~:~~: ~~: ~g ~~~ ~g KSP1102 KSP1122
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SoT7606
OT7606
BU128
SK3269
2N2229
2N3473
2N2233
2N3477
BUV28A
IR517
2N1813
BU107
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Philips FA 291
Abstract: BUV28AF BUV28F
Text: PHILIPS INTERNATIONAL 45E D a 711002b DD31DTS 2 C1PHIN BUV28F BUV28AF T-33-W SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a SOT186 envelope with electrically isolated mounting base, intended for use in converters,' inverters, switching regulators, motor control
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711002b
DD31DTS
BUV28F
BUV28AF
OT186
D0031100
T-33-n
Philips FA 291
BUV28AF
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t33b
Abstract: No abstract text available
Text: 45E D PHILIPS INTERN ATIONAL a 711002b 0D31DTS 2 E 3 PH IN BUV28F BUV28AF T-33M I SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a S O T 1 8 6 envelope w ith electrically isolated mounting base, intended fo r use in converters,' inverters, switching regulators, m otor control
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711002b
0D31DTS
BUV28F
BUV28AF
T-33M
t33b
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BUV28A
Abstract: BUV28
Text: N AMER PHILIPS/DISCRETE b^E D • bbS3R31 DD2Û47D 117 I IAPX '' BUV28 BUV28A SILICON DIFFUSED POWER TRANSISTORS High-speed, glass-passivated npn transistors in a T 0 -2 2 0 envelope intended for fast switching applications such as high frequency and efficiency converters, switching regulators and motor controls.
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bbS3R31
BUV28
BUV28A
T0-220
O-220AB.
BUV28
QD26473
BUV28A
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b^E D • bbS3R31 □026470 IT? « A P X BUV28 BUV28A _ / V _ SILICON DIFFUSED POWER TRANSISTORS High-speed, glass-passivated npn transistors in a TO-220 envelope intended for fast switching applications
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bbS3R31
BUV28
BUV28A
O-220
bb53T31
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BUV28
Abstract: BUV28A
Text: I I PHILIPS INTERNATIONAL 4SE » a 711üô2b Q O H I C m 5 E3PHIN BUV28 BUV28A T-33~¡¡ SILICON DIFFUSED POWER TRANSISTORS High-speed, glass-passivated npn transistors in a T 0 -2 2 0 envelope intended fo r fast switching applications such as high frequency and efficiency converters, switching regulators and m otor controls.
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711D02b
BUV28
BUV28A
T0-220
O-220AB.
D031Cm
T-33-II
BUV28A
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Untitled
Abstract: No abstract text available
Text: N APIER PHILIPS/DISCRETE h'lE D • t.bSB'iai 0026474 632 I IAPX BUV28F BUV28AF SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a SOT186 envelope w ith electrically isolated mounting base, intended fo r use in converters, inverters, switching regulators, m otor control
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BUV28F
BUV28AF
OT186
DEfl47â
7Z92587
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diode 1000V 10a
Abstract: 200v 1.5v 3a diode TO-220aB 11A diode 6A 1000v DIODE 2A 400V TO-220aB rr 4045AV
Text: Power Devices High Speed, M edium Voltage Transistors in o r d e r o f c u rr e n t rating VCE (sat) max. at le max. at Iq Package Outline •cfDO*1* v CBO v CEO BU 406 BU407 TO-220AB 7A 400V 300V 200V 100V 1V at 5A 750ns at 5A BUV28 BUV28A TO-220AB 12A
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O-220AB
O-220AB
750ns
BU407
BUV28
BUV28A
BUV27
BUV27A
diode 1000V 10a
200v 1.5v 3a diode
TO-220aB 11A
diode 6A 1000v
DIODE 2A 400V
TO-220aB rr
4045AV
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BPW22A
Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey
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BS9000,
D3007
HE4000B
80RIBUTION
BS9000
BPW22A
cm .02m z5u 1kv
pin configuration of BFW10
la4347
B2X84
TDA3653 equivalent
TRIAC TAG 9322
HEF40106BP equivalent
fx4054 core
dsq8
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transistor f6 13003
Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.
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SC08b
transistor f6 13003
equivalent transistor bj 131-6
transistor Eb 13003 BM
BB112
smd TRANSISTOR code marking 2F 6n
a1211 lg
CQY58
BU705
TRANSISTOR 131-6 BJ 026
philips om350
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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BGY41
Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.
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LCD01
BGY41
BFW10 FET transistor
CQY58
germanium
RX101
equivalent components FET BFW10
bd643
bf199
283 to92 600a transistor
zener phc
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
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TXD10K40
Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
Text: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40
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bbS3131
BLU52
1N321
BYW56
1N321A
BLV97
1N322
TXD10K40
TXD10K60
BT1690
BT808
1N5004
TXD10H60
mp8706
TXC10K40
BSTC1026
BT13G
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