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    BUV90F Price and Stock

    Philips Semiconductors BUV90F

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components BUV90F 59
    • 1 $13.032
    • 10 $8.688
    • 100 $8.0364
    • 1000 $8.0364
    • 10000 $8.0364
    Buy Now

    BUV90F Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BUV90F Philips Semiconductors Silicon Diffused Darlington Power Transistor Original PDF
    BUV90F Philips Semiconductors Silicon Diffused Darlington Power Transistor Original PDF
    BUV90F Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUV90F Philips Semiconductors High Speed High Voltage Darlingtons / Transistors Scan PDF
    BUV90F Philips Semiconductors Silicon Diffused Darlington Power Transistor Scan PDF

    BUV90F Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    10LC1

    Abstract: BUV90F CAR IGNITION
    Text: Philips Semiconductors Product specification Silicon Diffused Darlington Power Transistor BUV90F GENERAL DESCRIPTION High-voltage, monolithic npn power Darlington transistor in a SOT199 envelope intended for use in car ignition systems, DC and AC motor controls, solenoid drivers, etc.


    Original
    PDF BUV90F OT199 OT199 10LC1 BUV90F CAR IGNITION

    690 lc

    Abstract: 100S BUV90F IEC134 NPN POWER DARLINGTON TRANSISTORS
    Text: bTE D • bbS3T31 GOEöM'i'i IDE * A P X BUV90F i i N AUER PH ILIPS /DISCRETE _ y ' - SILICON DIFFUSED DARLINGTON POWER TRANSISTORS High-voltage, m onolithic npn power Darlington transistors in aSOT199 envelope intended fo r use in


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    PDF BUV90F aSOT199 690 lc 100S BUV90F IEC134 NPN POWER DARLINGTON TRANSISTORS

    ba7 transistor

    Abstract: BUV90F lg system ic
    Text: Product specification Philips Semiconductors Silicon Diffused Darlington Power Transistor BUV90F GENERAL DESCRIPTION High-voltage, monolithic npn power Darlington transistor in a SOT199 envelope intended for use in car ignition systems, DC and AC motor controls, solenoid drivers, etc.


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    PDF BUV90F OT199 ThsS25 711DflBb OT199; 711Gfl2b 00777b0 ba7 transistor BUV90F lg system ic

    Untitled

    Abstract: No abstract text available
    Text: bTE D • bbS3T31 QOEflM'n IDE « A P X BUV90F i i N AMER PHILIPS/PISCRETE _ y ' - SILICON DIFFUSED DARLINGTON POWER TRANSISTORS High-voltage, m onolithic npn power Darlington transistors in a SOT199 envelope intended fo r use in


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    PDF bbS3T31 BUV90F OT199 bb53T31 DD26SDE

    ESM40

    Abstract: BUT21A bux86 philips semiconductor ESM6045DV 10a 1000v to220a DIODE 3A 1000V ESM4045DV 1000v 3a diode SOT93 diode 6A 1000v
    Text: N AMER PHILIPS/DISCRETE 55E D • bt353tm Q01b22Q b ■ T~32-0t Power Devices HIGH SPEED, HIGH VOLTAGE DARLINGTONS in order of current rating PACKAGE OUTLINE *C(DC)W SOT-93 BUV90 SOT-93 BUV90F SOT-199 ESM3045AV ËSM3045DV VCE(*at) MAX. a t lc ff MAX a t lc


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    PDF bk53i31 QCUb220 T-32-OI BU826 OT-93 BU826A BUV90 BUV90F OT-199 ESM40 BUT21A bux86 philips semiconductor ESM6045DV 10a 1000v to220a DIODE 3A 1000V ESM4045DV 1000v 3a diode SOT93 diode 6A 1000v

    BUS11A PHILIPS SEMICONDUCTOR

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE 25E D • bb53,m Q01b22Q b ■ T~32-0t Power Devices HIGH SPEED, HIGH VOLTAGE DARLINGTONS in order of current rating PACKAGE O U T LIN E *C(DC)(U V CBO V CEO SOT-93 6A 800V 900V BUV90 SOT-93 12A BUV90F SOT-199 ESM3045AV ESM 3045DV


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    PDF Q01b22Q 32-0t OT-93 BUV90 BUV90F OT-199 ESM3045AV 3045DV ESM4045AV BUS11A PHILIPS SEMICONDUCTOR

    transistor f6 13003

    Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
    Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.


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    PDF SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350

    diode 400V 4A

    Abstract: DIODE 3A 1000V BUT21A 1000v 3a diode ESM3045AV BUX86 Diode 400V 5A ESM5045DV diode 400V 6A ESM3045DV
    Text: N AMER PH ILIPS/ DIS CRETE 42 SSE D • ^53131 001^220 b ■ T~32-0l Power Devices HIGH SPEED, HIGH VOLTAGE DARLINGTONS in order of current rating TYPE NO. BU826 BU826A PACKAGE OUTLINE *C(DC)(tJ SOT-93 V CE(*at) MAX. a t lc tf MAX a t lc 375V 400V 2V at 2.5A


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    PDF BU826 BU826A OT-93 BUV90 BUV90F OT-199 ESM3045AV ESM3045DV OT-227B2 diode 400V 4A DIODE 3A 1000V BUT21A 1000v 3a diode BUX86 Diode 400V 5A ESM5045DV diode 400V 6A

    BGY41

    Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
    Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.


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    PDF LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc

    FET BFW10

    Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
    Text: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI


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    PDF BA220 BA221 BA223 BA281 BA314 BA315 BA316 BA317 BA318 BA423 FET BFW10 KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11