BUW11
Abstract: BUW11A BUW11AF BUW11F
Text: Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUW11 BUW11A DESCRIPTION ・With TO-3PN package ・High voltage ;high speed APPLICATIONS ・Converters ・Inverters ・Switching regulators ・Motor control systems PINNING See Fig.2
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BUW11
BUW11A
BUW11
BUW11F
BUW11AF
BUW11A
BUW11AF
BUW11F
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BUW11
Abstract: BUW11A BUW11AF BUW11F
Text: SavantIC Semiconductor Product Specification BUW11 BUW11A Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·High voltage ;high speed APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems PINNING See Fig.2 PIN
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BUW11
BUW11A
BUW11
BUW11AF
BUW11F
BUW11A
BUW11AF
BUW11F
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Zener Diode 3v 400mW
Abstract: transistor bc548b BC107 transistor TRANSISTOR bc108 bc547 cross reference chart Transistor BC109 DIAC OB3 DIAC Br100 74HCT IC family spec TRANSISTOR mosfet BF998
Text: INDEX Order Code Description Page Number – Philips Semiconductors 1 485-068 DS750 Development Kit 1 527-749 87C750 Hardware Kit 1 – Philips Semiconductors Data Communications UART Product Line 2 790-590 80C51 In a Box 3 – 80C51 Family Features 3 –
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DS750
87C750
80C51
PZ3032-12A44
BUK101-50GS
BUW12AF
BU2520AF
16kHz
BY328
Zener Diode 3v 400mW
transistor bc548b
BC107 transistor
TRANSISTOR bc108
bc547 cross reference chart
Transistor BC109
DIAC OB3
DIAC Br100
74HCT IC family spec
TRANSISTOR mosfet BF998
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THINKI transistor catalog
Abstract: audio amplifier ic bd249c catalog AUDIO HIGH POWER AMPLIFIER 3DD301 2sc3229 2SA747
Text: THINKI TRANSISTOR CATALOG Power Transistors For Audio Power Amplifier PC IC Vceo W (A) (V) Model Vcbo Vebo (V) (V) Vce(sat) hFE fT (V) VCE(V) IC(A) max IC(A) (MHz) Package Function TYP IB(A) 1 -0.05 -150 2SA914 -150 -5 90-450 -5 -0.01 -1 -0.03 -0.003
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2SA914
O-126
2SA900
2SC2556
2SC2556A
LM317K
O-220
LM317T
THINKI transistor catalog
audio amplifier ic
bd249c catalog
AUDIO HIGH POWER AMPLIFIER
3DD301
2sc3229
2SA747
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon diffused power transistors BUW11W; BUW11 AW DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a SOT429 package. o APPLICATIONS _ o • Converters • Inverters • Switching regulators
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OT429
BUW11W;
BUW11
OT429)
BUW11W
BUW11AW
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BUW11
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE bb53= 31 0026515 165 b'lE D APX BUW11 BUW11A SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a SOT93 envelope, intended for use in converters, inverters, switching regulators, motor control systems etc.
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BUW11
BUW11A
BUW11
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BUW11A
Abstract: d777b BUW11 transistor BU 102
Text: Product specification Philips Semiconductors BUW11; BUW11A Silicon diffused power transistors High-voltage, high-speed, glass-passivated npn power transistors in a SOT93 envelope, intended for use in converters, inverters, switching regulators, motor control systems etc.
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BUW11;
BUW11A
BUW11
7110fl5b
GD777b8
BUW11A
d777b
transistor BU 102
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lem lt 100 p
Abstract: BUW11A BUW11 lem 50 p
Text: Product specification Philips Semiconductors Silicon diffused power transistors BUW11 ; BUW11A High-voltage, high-speed, glass-passivated npn power transistors in a SOT93 envelope, intended fo r use in converters, inverters, sw itching regulators, m oto r control systems etc.
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BUW11
BUW11A
BUW11
711062b
00777bfl
lem lt 100 p
BUW11A
lem 50 p
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BUW11
Abstract: BUW11A buw11 transistor philips rf transistors buw111
Text: Philips Semiconductors Product specification Silicon diffused power transistors BUW11 ; BUW11A High-voltage, high-speed, glass-passivated npn power transistors in a S0T93 envelope, intended fo r use in converters, inverters, switching regulators, m otor control systems etc.
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BUW11;
BUW11A
S0T93
BUW11
711002b
0777b?
BUW11A
buw11 transistor
philips rf transistors
buw111
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2051B
Abstract: BUW11 SII-020 BUW11A IEC134
Text: N AMER PHILI P S / D I S C R E T E b'iE D • Jl bb53= 31 0020515 165 H A P X BUW11 BUW11A SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn po w er transistors in a S O T 9 3 envelope, intended fo r use in converters, inverters, switching regulators, m o to r co ntrol systems etc.
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BUW11
BUW11A
7Z82933
2051B
SII-020
BUW11A
IEC134
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EAKD
Abstract: BUW12A
Text: MOTOROLA SC XSTRS/R F 1HE D I I b3b?2S4 QüôM'iai 1 I MOTOROLA SE M IC O N D U C T O R TECHNICAL DATA BUW 11,A BUW 12,A Designer's Data Sheet N P N Silicon Pow er Transistors Switchm ode Series These transistors are designed for high-voltage, high-speed, power switching in induc
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C0NTH01UNG
O-218AC
EAKD
BUW12A
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g5643
Abstract: G 5643 transistor B 1184 BUW11A
Text: s G S-T HOMSON 07E D J 67 C TESTES? ÔOlTEOb S j 15108 D MULTIEPITAXIAL MESA NPW A D V A N C E DATA HIGH VO LTA G E POWER SWITCH The BUW 11 and BUW 11A are silicon multiepitaxial mesa NPN transistor in SO T-93 plastic package, particularly intended for switching applications
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BUW11
BUW11A
O0172
g5643
G 5643
transistor B 1184
BUW11A
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ZB1702
Abstract: BUW11AF BUW11F ZB1-7 ScansUX40
Text: Philips Semiconductors Product specification Silicon diffused power transistors BUW11F; BUW11AF High-voltage, high-speed, glass-passivated npn power transistor in a SOT 199 envelope intended for use in converters, inverters, switching regulators, motor control systems, etc.
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BUW11F;
BUW11AF
BUW11F
711062b
QG77773
ZB1702
711Dfi2b
ZB1-7
ScansUX40
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BUW11AF
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon diffused power transistors BUW11F; BUW11AF DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a SOT 199 package. o APPLICATIONS nn • Converters • Inverters • Switching regulators
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BUW11F;
BUW11AF
8B008
OT199)
BUW11F
BUW11AF
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diode 1000V 10a
Abstract: 200v 1.5v 3a diode TO-220aB 11A diode 6A 1000v DIODE 2A 400V TO-220aB rr 4045AV
Text: Power Devices High Speed, M edium Voltage Transistors in o r d e r o f c u rr e n t rating VCE (sat) max. at le max. at Iq Package Outline •cfDO*1* v CBO v CEO BU 406 BU407 TO-220AB 7A 400V 300V 200V 100V 1V at 5A 750ns at 5A BUV28 BUV28A TO-220AB 12A
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O-220AB
O-220AB
750ns
BU407
BUV28
BUV28A
BUV27
BUV27A
diode 1000V 10a
200v 1.5v 3a diode
TO-220aB 11A
diode 6A 1000v
DIODE 2A 400V
TO-220aB rr
4045AV
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BUT13P
Abstract: BLN20 BUT14 SOT93 BUV62 BUS50 BUS13A BUV24 BUV41 but72
Text: *4ö E ì> Ö1331Ö7 GG004S4 044 •SML B SEMELABE REL & HIGH ENERGY BI-POLAR TRANSISTORS Type Number BUS13 BUS13A BIJS14 BUSINA BUS50 BUS51 BUS52 BUT11 ia BUT13 BUT13P BUT14 BUT34 BIJT35 BUT70 IMJT72 BUT90 BOT91 BUT92 BUT92A KIVION BiJVll BUV18 BUV19 BIJV20
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GG004S4
BUS13
15min
BUS13A
BUS14A
BUS50
20min
BUS51
BUT13P
BLN20
BUT14
SOT93
BUV62
BUV24
BUV41
but72
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BUW11F
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon diffused power transistors BUW11F; BUW11AF DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a S O U 99 package. o APPLICATIONS • Converters 2 • Inverters nn • Switching regulators
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USB012
BUW11F;
BUW11AF
BUW11F
BUW11AF
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ESM40
Abstract: BUT21A bux86 philips semiconductor ESM6045DV 10a 1000v to220a DIODE 3A 1000V ESM4045DV 1000v 3a diode SOT93 diode 6A 1000v
Text: N AMER PHILIPS/DISCRETE 55E D • bt353tm Q01b22Q b ■ T~32-0t Power Devices HIGH SPEED, HIGH VOLTAGE DARLINGTONS in order of current rating PACKAGE OUTLINE *C(DC)W SOT-93 BUV90 SOT-93 BUV90F SOT-199 ESM3045AV ËSM3045DV VCE(*at) MAX. a t lc ff MAX a t lc
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bk53i31
QCUb220
T-32-OI
BU826
OT-93
BU826A
BUV90
BUV90F
OT-199
ESM40
BUT21A
bux86 philips semiconductor
ESM6045DV
10a 1000v to220a
DIODE 3A 1000V
ESM4045DV
1000v 3a diode
SOT93
diode 6A 1000v
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diode 400V 4A
Abstract: DIODE 3A 1000V BUT21A 1000v 3a diode ESM3045AV BUX86 Diode 400V 5A ESM5045DV diode 400V 6A ESM3045DV
Text: N AMER PH ILIPS/ DIS CRETE 42 SSE D • ^53131 001^220 b ■ T~32-0l Power Devices HIGH SPEED, HIGH VOLTAGE DARLINGTONS in order of current rating TYPE NO. BU826 BU826A PACKAGE OUTLINE *C(DC)(tJ SOT-93 V CE(*at) MAX. a t lc tf MAX a t lc 375V 400V 2V at 2.5A
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BU826
BU826A
OT-93
BUV90
BUV90F
OT-199
ESM3045AV
ESM3045DV
OT-227B2
diode 400V 4A
DIODE 3A 1000V
BUT21A
1000v 3a diode
BUX86
Diode 400V 5A
ESM5045DV
diode 400V 6A
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BUS11A PHILIPS SEMICONDUCTOR
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE 25E D • bb53,m Q01b22Q b ■ T~32-0t Power Devices HIGH SPEED, HIGH VOLTAGE DARLINGTONS in order of current rating PACKAGE O U T LIN E *C(DC)(U V CBO V CEO SOT-93 6A 800V 900V BUV90 SOT-93 12A BUV90F SOT-199 ESM3045AV ESM 3045DV
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Q01b22Q
32-0t
OT-93
BUV90
BUV90F
OT-199
ESM3045AV
3045DV
ESM4045AV
BUS11A PHILIPS SEMICONDUCTOR
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FET BFW10
Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
Text: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI
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BA220
BA221
BA223
BA281
BA314
BA315
BA316
BA317
BA318
BA423
FET BFW10
KP101A
FET BFW11
BDX38
KPZ20G
CQY58A
BFW10 FET
RPW100
B0943
OF FET BFW11
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MJE520
Abstract: bd189 sc 6038 MJE12007 MOTOROLA 527 33A mj4647 mje13006 BD 433NPNTO-126 Je105 mps-u
Text: MOTORCLA SC XSTRS/R F 12E D | t3t?5SM aüâ4m ? T | T -9 1 -0 1 Selection By Package Motorola power transistors are available in a wide variety of metal and plastic packages to match thermal, electrical and cost requirements. The following table com pares the basic
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-204AA
-204AE
T0-204A
97A-02
O-205AD
BUS51
BUV21
BUV11
2N6249
BUX41
MJE520
bd189
sc 6038
MJE12007
MOTOROLA 527 33A
mj4647
mje13006
BD 433NPNTO-126
Je105
mps-u
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RPY 86
Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
Text: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ
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20N15
Abstract: 35n05 mje13002 to92 ur3060 AN803 motorola 2N6823 isolated dc-dc mc34063 mje12007 Motorola Switchmode 1 special
Text: C O N TE N TS Page What Everyone Should Know About Switching Power Supplies In tro du ctio n. Comparison w ith Linear Regulations.
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