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    BUW51 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BUW51 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUW51 Semelab Bi-Polar Transistors (CECC and High Rel) & High Energy Scan PDF
    BUW51 Semelab NPN MULTI-EPITAXIAL POWER TRANSISTOR Scan PDF
    BUW51 STMicroelectronics Shortform Data Book 1988 Short Form PDF
    BUW51 Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF

    BUW51 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    T25M40

    Abstract: SKC25B75 SEMIKRON book ibm ppc 440
    Text: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 25 •30 >= 20 A, Semikron Semikron ~~~~~8(p.) ~~nyo ~~ect BUV51 (A) BUW51 (A) BUW1B BUW1B BUW19 2N3771 1561·040B 1561·040B 1061-041U 1561-0410 MJ3771 2N5301 BOX41 2N2757 2N2763 2N2769 2N2775 5250·50


    Original
    SKC25B75 SKC25K75 T25M40 GSRU20040 2SC2903 2SC30B5 SKC25KB5 2SC3455 2SC39BB SEMIKRON book ibm ppc 440 PDF

    SKC25K85

    Abstract: ST29045 2SD319 P1743-0630 BUW18 SDT9701 1561-0810
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO on PD Max hFE *T ON) Min (HZ) ICBO t0N r Max Max (A) (s) Max (Ohms) (CE)sat Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . -5 -10 -15 -20 . . -25


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    GSRU20040 2SC2903 SKC25B70 SKC25B75 SKC25K85 2SC3988 2SC3455 2SC3989 BUP38 ST29045 2SD319 P1743-0630 BUW18 SDT9701 1561-0810 PDF

    BUV48I

    Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
    Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable


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    2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046 PDF

    Diode 400V 5A

    Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
    Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM


    Original
    2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN PDF

    STRS6307

    Abstract: STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020
    Text: 2N3054 TO-66 2N32741 TO-66 2N4240 TO-66 2N4908 TO-3 2N3054A TO-66 2N3766 TO-66 2N4273 TO-66 2N4909 TO-3 2N3055 TO-3 2N3767 TO-66 2N4298 TO-66 2N4910 TO-66 2N3171 TO-3 2N3771 TO-3 2N4347 TO-3 2N4911 TO-66 2N3172 TO-3 2N3772 TO-3 2N4348 TO-3 2N4912 TO-66 2N3173


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    2N3054 2N32741 2N4240 2N4908 2N3054A 2N3766 2N4273 2N4909 2N3055 2N3767 STRS6307 STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020 PDF

    bu2527af

    Abstract: wk16412 WK16413 WK16414 Tesla katalog VQE24 VQE14 4DR823B kr206 5DR801B
    Text: Pøehled diskrétních polovodièových souèástek TESLA a dalších dovážených typù z nìkdejší RVHP TRANZISTORY TYRISTORY • TRIAKY • DIAKY DIODY • LED • DISPLEJE OPTOÈLENY a další prvky … spolu s náhradami … a nejpoužívanìjší standardní


    Original
    roku1984/85, VQB200 VQB201 VQC10 VQE11 VQE12 VQE13 VQE14 VQE21 VQE22 bu2527af wk16412 WK16413 WK16414 Tesla katalog VQE24 4DR823B kr206 5DR801B PDF

    BUW51

    Abstract: 200V transistor npn 2a tfi LE17 LC14A
    Text: S E M E L A B LTD JU L 37E D 0 6 1988 Ô 1 3 3 1 Ô 7 0 D G D l ti4 fl • SP1LB SEM ELAB BUW51 NPN MULTI-EPITAXIAL POWER TRANSISTOR Suitable for high current, high speed, low voltage applications MECHANICAL DATA Dimensions in mm . 4 63 FEATURES • LOW VCE SAT


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    BUW51 300ns BUW51 200V transistor npn 2a tfi LE17 LC14A PDF

    TDA0161 equivalent

    Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
    Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:


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    PDF

    BUD48

    Abstract: BUD48DI BUD 48 BUX23 BUV41 BUV40 BUW38 BUW52 bux348 TR MJE 350
    Text: SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL M0 glJ3 ILdOT©[ l(SS POWER BIPOLAR FAST SWITCHING TRANSISTORS AND DARLINGTONS Internal schematic diagrams Darlingtons except BUD 48 Dl Bipolar transistors 120 / 300 V VCBO RANGE •c Vc b O v CEO ptot <A) (V) (V)


    OCR Scan
    D44Q1 D44Q3 D44Q5 BUV27 BUD48 BUD48DI BUD 48 BUX23 BUV41 BUV40 BUW38 BUW52 bux348 TR MJE 350 PDF

    BUD48DI

    Abstract: BUD48 BUV41 BUX 115 BUV18 BUD 48 D44Q5 BUW38 BUV26 BUV40
    Text: SGS-THOMSON M0 glJ3 ILdOT©[ l(SS GENERAL PURPOSE & INDUSTRIAL POWER BIPOLAR FAST SWITCHING TRANSISTORS AND DARLINGTONS Internal schematic diagrams Darlingtons except BUD 48 Dl Bipolar transistors 120 / 300 V VCBO RANGE •c Vc b O v CEO ptot <A) (V) (V)


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    D44Q1 D44Q3 D44Q5 BUV27 BUD48DI BUD48 BUV41 BUX 115 BUV18 BUD 48 BUW38 BUV26 BUV40 PDF

    mje520

    Abstract: SGS1F444 SGSD00030 e13008 BUT23 2m3771 BUT62 BUW42AP 2n5337 BUW32AP
    Text: S E L E C T IO N G U ID E B Y P A C K A G E GENERAL PURPOSE TRANSISTO RS SO T-32 P 4 Complemen­ hFE«* 'c A VCE (V) “CEsat » 'c (A) (V) BD434 MJE210 MJE370 BD436 2N4918 2N5193 50 70 25 50 30 25 2.00 0.50 1.00 2.00 0.50 1.50 1.0 1.0 1.0 1.0 1.0 2.0 0.50


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    BD433 MJE200 MJE520 BD435 2N4921 2IM5190 2IM6037 MJE521 MJE180 BD135 SGS1F444 SGSD00030 e13008 BUT23 2m3771 BUT62 BUW42AP 2n5337 BUW32AP PDF

    BUS11A

    Abstract: BUV11 BUT91
    Text: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES Type_No BUR51 BUR51S BUR52 BUR52S BUS11 BUS11 CECC BUS11A BUS11A CECC BUS 12 BUS12A BUS 13 BUS13A BUSI 4 BUS14A BUS50 BUS51 BUS52 BUT13 BUT13P BUT70 BUT70MC BUT72 BUT90 BUT90C BUT91 BUT92 BUT92A BUT92AS


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    BUR51 BUR51S BUR52 BUR52S BUS11 BUS11A BUS12A BUS13A BUV11 BUT91 PDF

    JE350

    Abstract: je180 MJ13004 TP33C BD325 JE172 BDX48 JE340 bd160 BUT55
    Text: INDUSTRY STANDARD SGS-THOMSON BD135 BD136 BD137 BD138 BD139 BD135 BD136 BD137 BD138 BD139 BD140 BD142 BD144 BD157 BD158 BD140 BD159 BD160 BD165 BD166 BD167 BD159 SGS-THOMSON PAGE NEAREST BD157 BD158 2N5878 BD437 BD438 BD439 BD440 BD441 BD442 BD237 BD238 BD168


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    BD135 BD136 BD137 BD138 BD139 BD140 BD142 BD144 BD157 BD158 JE350 je180 MJ13004 TP33C BD325 JE172 BDX48 JE340 bd160 BUT55 PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 PDF

    2M3055

    Abstract: B0W94C mje520 2M5886 13007 hf mj 13008 2n5337 IU 1047 tip120 pnp BD908
    Text: G E N E R A L P U R P O S E T R A N S IS T O R S Comple­ Type mentary V CE0 V CB0 V (V) 'c (A) hFE * 'c (A) V CE V CEsat (V) (V) 9 'c (A) 'b R 1hj-c (mA) fC/W) 1.5 1.17 1.17 1.17 1.17 1399 1047 1047 1053 1053 T O -3 T O -3 T O -39 T O -3 T O -3 1047 1047


    OCR Scan
    2N3055 2N3715 2N3716 2N3771 2M3772 2N3791 2N3792 2N4234 2N4398 2N4399 2M3055 B0W94C mje520 2M5886 13007 hf mj 13008 2n5337 IU 1047 tip120 pnp BD908 PDF

    U/25/20/TN26/15/850/yd 803 ic

    Abstract: BUX22M JE13005 JE802 TIP+317+data+sheet bu808df1 je200 2n5337 S13003 2N6057
    Text: G E N E R A L P U R P O S E T R A N S IS T O R S TY PE ‘c V CE V CEsat 8 A (V) (V) 'o (A) 'b Rthj-c (mA) rc / w ) V CE0 V CB0 'c (V) (V) (A) 22 22 4 BD433 BD434 50 2.00 1.0 0.50 2.00 200 25 40 5 M JE200 M JE210 70 0.50 1.0 0.30 0.50 50 30 30 3 M JE520


    OCR Scan
    BD433 JE200 JE520 D44H1 D44H2 D44C1 D44C2 D44C3 2N6288 BD435 U/25/20/TN26/15/850/yd 803 ic BUX22M JE13005 JE802 TIP+317+data+sheet bu808df1 2n5337 S13003 2N6057 PDF

    BUV18

    Abstract: chip die npn transistor BUW38 G936A BUV51 G636A BUW51 G336A BUP46 BUP55
    Text: MflE D A1331S7 D D D 0 4 n TMT SEMEFABF SEMELAB LTD W- \-3>5-D7 The G136 chip family is an NPN bipolar multi-epitaxial planar transistor intended for applications requiring fast switching, low saturation, high power robust devices. • UP TO 55 AMPS • UP TO 6 5 0 VOLTS VCBO


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    A1331S7 G536A G636A G736A G336A G436A BUV51 BUW51 BUW61 G236A BUV18 chip die npn transistor BUW38 G936A BUP46 BUP55 PDF