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    BUZ1 Price and Stock

    Rochester Electronics LLC BUZ100S-E3045A

    N-CHANNEL POWER MOSFET
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    DigiKey BUZ100S-E3045A Bulk 28,500 547
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    Rochester Electronics LLC BUZ101L

    N-CHANNEL POWER MOSFET
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    DigiKey BUZ101L Bulk 5,075 1,039
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    Rochester Electronics LLC BUZ100S

    N-CHANNEL POWER MOSFET
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    DigiKey BUZ100S Bulk 2,483 547
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    Rochester Electronics LLC BUZ111SLE3045A

    MOSFET N-CH 50V 80A TO263
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    DigiKey BUZ111SLE3045A Bulk 2,000 355
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    Rochester Electronics LLC BUZ111SL-E3045A

    N-CHANNEL POWER MOSFET
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    DigiKey BUZ111SL-E3045A Bulk 1,830 353
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    BUZ1 Datasheets (372)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BUZ10 Infineon Technologies Transistor Mosfet N-CH 50V 23A 3TO-220AB Original PDF
    BUZ10 Philips Semiconductors PowerMOS Transistor Original PDF
    BUZ10 STMicroelectronics N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS Original PDF
    BUZ10 STMicroelectronics N - Channel 50 V - 0.06 ohm - 23 A TO-220 STripFET MOSFET Original PDF
    BUZ10 STMicroelectronics N-CHANNEL 50V - 0.06 Ohm - 23A -TO-220 STripFET POWER MOSFET Original PDF
    BUZ10 STMicroelectronics N-Channel 50V - 0.06Ohm - 23A TO-220 STripFET MOSFET Original PDF
    BUZ10 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    BUZ10 Motorola European Master Selection Guide 1986 Scan PDF
    BUZ10 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BUZ10 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BUZ10 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUZ10 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BUZ10 Unknown FET Data Book Scan PDF
    BUZ10 Semelab MOS Power Transistor Scan PDF
    BUZ10 Siemens Power Transistors Scan PDF
    BUZ10 STMicroelectronics Shortform Data Book 1988 Short Form PDF
    BUZ100 Siemens Original PDF
    BUZ100 Siemens SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated) Original PDF
    BUZ100 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    BUZ100 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    ...

    BUZ1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BUZ11A

    Abstract: No abstract text available
    Text: BUZ11A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ11A • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V < 0.055 Ω 27 A TYPICAL RDS(on) = 0.048 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE


    Original     		PDF BUZ11A 100oC 175oC O-220 BUZ11A

    BUZ111SL

    Abstract: Q67040-S4003-A2 SPP80N05
    Text: BUZ111SL SPP80N05L SIPMOS Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code


    Original     		PDF BUZ111SL SPP80N05L O-220 Q67040-S4003-A2 28/Jan/1998 BUZ111SL Q67040-S4003-A2 SPP80N05

    BUZ11

    Abstract: TB334
    Text: BUZ11 Data Sheet June 1999 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET Features This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching


    Original     		PDF BUZ11 TA9771. BUZ11 TB334

    SPP80N05L

    Abstract: BUZ111SL Q67040-S4003-A2
    Text: BUZ111SL SPP80N05L SIPMOS Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code


    Original     		PDF BUZ111SL SPP80N05L O-220 Q67040-S4003-A2 28/Jan/1998 SPP80N05L BUZ111SL Q67040-S4003-A2

    BUZ171

    Abstract: No abstract text available
    Text: f T Siliconix BUZ171 in c o r p o r a te d P-Channel Enhancement Mode Transistor TO-22QAB TOP VIEW o PRODUCT SUMMARY V BR DSS •d (V) r DS(ON) ( il) (A) -50 0.40 -7.0 1 GATE 2 DRAIN (Connected to TAB) 3 SOURCE ABSOLUTE MAXIMUM RATINGS (Tc = 25 C Unless Otherwise Noted)1


    OCR Scan     		PDF BUZ171 O-22QAB BUZ171

    BUZ11A

    Abstract: BUZ11
    Text: H BUZ11A SiSconix in c o r p o r a te d N-Channel Enhancement Mode Transistor TO -220A B TOP VIEW o PRODUCT SUMMARY V BR DSS r DS(ON) •d (V) <«) (A) 50 0.060 25 1 GATE 2 DRAIN (Connected to TAB) 3 SO URCE , 2 3 ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)


    OCR Scan     		PDF BUZ11A -220A 10peration BUZ11A BUZ11

    P50N05

    Abstract: p50n06 TP3055EL tp50n05e MTP36N06E
    Text: N-Channel v«n n f S >« M ix ' Pd IW IM I MIX) so BUZ11 40 2 -4 30 /O 50 BUZ11A 55 2 -4 26 75 100 BUZ20 200 2 -4 1 3 .5 70 100 BUZ21 85 2 -4 21 75 50 BUZ71 100 2 -4 14 40 50 BUZ71A 120 2 -4 13 40 100 IR F 5 1 0 540 2 -4 5.6 43 100 IR F 5 2 0 270 2 -4 9.2


    OCR Scan     		PDF BUZ11 BUZ11A BUZ20 BUZ21 BUZ71 BUZ71A TP50N06E MTP50M P50N05 P50N06 P50N05 p50n06 TP3055EL tp50n05e MTP36N06E

    BUZ102SL

    Abstract: E3045 Q67040-S4010-A2 TO-92 44E BUZ 1025 marking t54 SMD DIODE gg 45 diode smd marking BUZ
    Text: BUZ102SL Infineon te c h n o lo g ie } » m p f°v e d Features Product Summary • N channel Drain source voltage Vbs • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current f l DS on 0.015 n 47 A t> V 55 • Logic Level


    OCR Scan     		PDF 102SL BUZ102SL_ P-TQ220-3-1 Q67040-S4010-A2 BUZ102SL E3045A P-TQ263-3-2 Q67040-S4010-A6 E3045 TO-92 44E BUZ 1025 marking t54 SMD DIODE gg 45 diode smd marking BUZ

    BUZ11

    Abstract: No abstract text available
    Text: Standard Power MOSFETs BUZ11 F ile N u m b e r 2253 N-Channel Enhancement-Mode Power Field-Effect Transistors 30 A, 50 V rosiom = 0.04 n N-CHANNEL ENHANCEMENT MODE Features: • SO-A is pow er-clissipation lim ite d m N anosecond sw itching speeds Linear transter characteristics


    OCR Scan     		PDF O-220AB BUZ11

    Untitled

    Abstract: No abstract text available
    Text: ¿57 B U Z11 B U Z 1 1 FI S G S -T H O M S O N ¡U È T O « N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYP E V dss BUZ11 BUZ11FI 50 V 50 V RDS on < 0.04 < 0.04 a a Id A 21 A 36 • TYPICAL RDS(on) = 0.03 Q . . AVALANCHE RUGGED TECHNOLOGY ■ 100% AVALANCHE TESTED


    OCR Scan     		PDF BUZ11 BUZ11FI BUZ11/FI ISQWATT220

    Untitled

    Abstract: No abstract text available
    Text: BUZ11 N - CHANNEL 50V - 0.03ft - 30A -TO-220 STripFET POWER MOSFET TYPE BUZ11 V R dss 50 V d Id S o ii < 0 .0 4 Q. 30 A . • TYPICAL RDS(on) = 0.03 AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED . HIGH CURRENT CAPABILITY . 175°C OPERATING TEMPERATURE


    OCR Scan     		PDF BUZ11 -TO-220

    BUZ15

    Abstract: No abstract text available
    Text: PowerMOS transistor_ _ BUZ15 N AUER PHILIPS/DISCRETE OhE D ” • hb53l31 □D14Sfl4_l ■ July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF BUZ15 hb53l31 D14Sfl4 bb53T31 T-39-13 BUZ15_ 00145fl bb53T31 0D145T0 BUZ15

    BUZ10

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE OLE D • PowerMOS transistor bb53T31 0014331 1 ■ BUZ10 r~ 1 May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF bb53T31 BUZ10 D0143flb T-39-11 7Z21184 BUZ10_ BUZ10

    Untitled

    Abstract: No abstract text available
    Text: BUZ14 PowerMOS transistor N AflER PHILIPS/DISCRETE DbE D • bb53T31 0014577 "4 ■ July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF BUZ14 bb53T31 bb53131 T-39-13 T-39-13' BUZ14---------------------------- 0D145f

    GD 743 Siemens

    Abstract: No abstract text available
    Text: SIEMENS BUZ 103 AL SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/df rated • Low on-resistance • 175 °C operating temperature • also In TQ-220 SMD available Type BUZ103AL ^bs 50 V b 35 A ^DS on


    OCR Scan     		PDF TQ-220 BUZ103AL C67078-S1357-A2 A23SbOS Z103AL O-220 T05155 235b05 D0fl45flfl GD 743 Siemens

    BUZ100

    Abstract: No abstract text available
    Text: SIEMENS BUZ 100L SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/df rated • Ultra low on-resistance • 175 °C operating temperature • also in TO-220 SMD available Type Vbs BUZ100L 50 V 4j 60 A


    OCR Scan     		PDF O-220 BUZ100L C67078-S1354-A2 BUZ100

    buz102

    Abstract: No abstract text available
    Text: SIEMENS BUZ 102 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/d/ rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available Pin 1 Pin 2 Type Vbs BUZ102 50 V b 42 A Pin 3 D G S ^DS on


    OCR Scan     		PDF O-220 BUZ102 C67078-S1351-A2 fl23Sb05 023Sfc 35bQ5 00fl45b buz102

    BUZ11 motorola

    Abstract: BUZ11 buz11a
    Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA BUZ11 BUZ11A P o w er Field E ffe c t T ran sisto r N -C h ann el Enh an cem en t-M ode S ilic o n G ate T M O S These TM O S III Pow er FETs are designed fo r lo w voltage, high speed, lo w loss p o w e r s w itc h in g a pp licatio n s such as


    OCR Scan     		PDF BUZ11 BUZ11A BUZ11 motorola buz11a

    buz11 application note

    Abstract: Z11B BUZ11F
    Text: SGS-THOMSON B U Z 11 B U Z 1 1 FI * 7 # l* IE » [ i( g T O [ * § N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS • • • • TYPE V DSS ^DS(on BUZ11 BUZ11FI 50 V 50 V 0.04 Q 0.04 Q •d • 30 A 20 A HIGH SPEED SWITCHING VERY LOW ON-LOSSES LOW DRIVE ENERGY FOR EASY DRIVE


    OCR Scan     		PDF BUZ11 BUZ11FI 500ms buz11 application note Z11B BUZ11F

    TRANSISTOR b 772 p

    Abstract: BUZ172
    Text: SIEMENS BUZ 172 SIPMOS Power Transistor • P channel • Enhancement mode • Avalanche rated Type BUZ172 Vbs -100 V h -5.5 A ^DS on Package Ordering Code 0.6 ß TO-220 AB C67078-S1451-A2 Maximum Ratings Parameter Symbol Continuous drain current fa Tc = 37 °C


    OCR Scan     		PDF BUZ172 O-220 C67078-S1451-A2 TRANSISTOR b 772 p BUZ172

    TSD45N50V

    Abstract: TSD200N05V TSD40N55V TSD180N10V IRF540 TSD135N10V TSD150N10V TSD4M450V TSD17N100 TSD160N05V
    Text: SELECTION GUIDE BY - PART NUMBER Type V BR DSS (V) ^DS(on) ^ Id max (A) (H) Package iD(max) (A) Ptot (W) Qfs min (S) Ciss max (pF) 850 2000 BUZ10 50 0.080 13.00 TO-220 20.0 85 6.00 BUZ11 BUZ11A BUZ11FI BUZ21 50 0.040 0.055 0.040 0.100 18.00 15.00 18.00 9.00


    OCR Scan     		PDF O-220 TSD45N50V TSD200N05V TSD40N55V TSD180N10V IRF540 TSD135N10V TSD150N10V TSD4M450V TSD17N100 TSD160N05V

    buz 11 bv

    Abstract: No abstract text available
    Text: BUZ11 23 HARRIS N-Channel Enhancement-Mode Power Field-Effect Transistor August 1991 Features Package T 0 -2 2 0 A B • 30 A , 50 V T O P V IE W • rD S on = 0 .0 4 n • S O A is P ow er-D issip atio n Lim ited DRAIN (FLANGE) • N anosecond S w itching S peeds


    OCR Scan     		PDF BUZ11 BUZ11 buz 11 bv

    buz11

    Abstract: buz11 motor control BUZ11 avalanche GC35620 airbag
    Text: rz 7 SCS-THOMSON Ä 7# RKMilLifg «! BUZ11 BUZ11FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ11 BUZ11FI I V dss RüS on Id 50 V 50 V 0.04 Q 0.04 n 36 A 20 A • . . . . . AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C


    OCR Scan     		PDF BUZ11 BUZ11FI O-220 ISOWATT220 CC35701 buz11 motor control BUZ11 avalanche GC35620 airbag

    buz10

    Abstract: No abstract text available
    Text: BUZ10 N - CHANNEL 50V - 0.06ft - 23A -TO-220 STripFET POWER MOSFET TYP E BUZ10 • . . . . V R d S o ii Id < 0.07 Q. 23 A dss 50 V TYPICAL RDS(on) = 0.06 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175°C OPERATING TEMPERATURE


    OCR Scan     		PDF BUZ10 -TO-220 O-220 buz10