STS Bv 1500
Abstract: No abstract text available
Text: BV 8, BV 12, BV 16 High Voltage Si-Rectifier Si-Hochspannungs-Gleichrichter Nominal current Nennstrom 350 mA Repetitive peak reverse voltage Periodische Spitzensperrspannung 7000. 15000 V Plastic case Kunststoffgehäuse 0 6.3 x 21 [mm] Weight approx. Gewicht ca.
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UL94V-0
R0D1RS14
DGG174
000017S
STS Bv 1500
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transistor A25 SMD
Abstract: rl 254 diode
Text: Photocoupler SMD/DIP Type High Isolation Voltage Single Transistor Type Multi Photocoupler Series PS2561-1,-2, PS2561L-1,-2 Features High isolation voltage BV = 5 000 Vr.m.s.: standard products BV = 3 750 Vr.m.s.: VDE0884 approved products Option High collector to emitter voltage (VCEO = 80 V)
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PS2561-1
PS2561L-1
VDE0884
PS2561-1
transistor A25 SMD
rl 254 diode
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Untitled
Abstract: No abstract text available
Text: BV 4, BV 6 Si-Hochspannungs-Gleichrichter High Voltage Si-Rectifier 50 mA Nominal current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung 3 000. 5 000 V Plastic case Kunststoffgehäuse D O -15 Weight approx. Gewicht ca. 0.4 g Plastic material has UL classification 94V-0
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UL94V-0
R0D1RS14
000017S
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TLP121-4
Abstract: tlp120 smd TLP112A
Text: Mini Flat Photocouplers SMD Photocouplers Transistor Output_ F7 Collector Breakdown Votage V(BR)CEO(V) Current Transfer Ratio Type No. Pin Configuration Features TLP121 4 ch Type TLP120 AC input £ TLP120-4 GB BV (mA) (V) 80 100 600 100 1200 200
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TLP121
TLP121-4
TLP124
TLP124-4
TLP120
TLP120-4
TLP126
TLP621
TLP621-4
TLP624
tlp120 smd
TLP112A
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transistor A25 SMD
Abstract: smd transistor H-R
Text: Photocoupler SMD/DIP Type High Isolation Voltage Single Transistor Type Multi Photocoupler Series PS2501-1,-2,-4, PS2501L-1,-2,-4 Features High isolation voltage BV = 5 000 Vr.m.s. High collector to emitter voltage (VCEO = 80 V) High-speed switching (tr = 3
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PS2501-1
PS2501L-1
PS2501-4
PS2501-1
transistor A25 SMD
smd transistor H-R
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p-channel mosfet
Abstract: 2N7522 p-channel 200V 2n752 iGSS 80 nA Vgs 0v
Text: Preliminary Data Sheet Repetitive Avalanche and dv/dt Rated MOSFET Transistor P-Channel 2N7522 200Volt, 0.505 Ω , RAD Hard MOSFET Package: SMD-0.5 R5 Product Summary Hex Size Technology BV DSS RDS on ID 3 RAD Hard -200V 0.505 Ω -8.0A Absolute Maximum Ratings
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2N7522
200Volt,
-200V
-160V,
p-channel mosfet
2N7522
p-channel 200V
2n752
iGSS 80 nA Vgs 0v
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2N7524
Abstract: smd 58a transistor 6-pin Zero-Gate Voltage Drain Current 60-VOLT 2n752 mosfet nA idss
Text: Preliminary Data Sheet Repetitive Avalanche and dv/dt Rated MOSFET Transistor P-Channel 2N7524 60 Volt, 0.015 Ω , RAD Hard MOSFET Package: SMD-2 R5 Product Summary Hex Size Technology BV DSS RDS on ID 6 RAD Hard -60V 0.015 Ω -75*A Absolute Maximum Ratings
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2N7524
2N7524
smd 58a transistor 6-pin
Zero-Gate Voltage Drain Current
60-VOLT
2n752
mosfet nA idss
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2N7519
Abstract: No abstract text available
Text: Preliminary Data Sheet Repetitive Avalanche and dv/dt Rated MOSFET Transistor P-Channel 2N7519 30 Volt, 0.035 Ω , RAD Hard MOSFET Package: SMD-0.5 R5 Product Summary Hex Size Technology BV DSS RDS on ID 3 RAD Hard -30V 0035 Ω -22*A Absolute Maximum Ratings
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2N7519
2N7519
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1ff TRANSISTOR SMD MARKING CODE
Abstract: smd transistor 5c sot-23 NB ad smd transistor SMD TRANSISTOR MARKING 6C SMD TRANSISTOR MARKING 5c npn smd dual diode marking code AH sot-23 BC548 TRANSISTOR SMD smd diode ZENER marking code BC marking code diode C1J SMD SMD TRANSISTOR MARKING c1p
Text: CENTRAL SENICONDUCTOR 50E D • DDDQS11 3Gb ■ CEN SMD Transistors SOT-23 Case U.S. Specification Preferred Series 350mW T Y P E NO. DESCRIPTION BVCBq (VOLTS) MW BV qeo (VOLTS) MIN BVebq (VOLTS) MIN Icbo 1^ V M (nA) (VOLTS) MAX MIN CMPT918 CMPT2222A CMPT2369
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DDDQS11
OT-23
350mW
CMPT918
CMPT2222A
CMPT2369
CMPT2484
CMPT2907A
CMPT3640
CMPT3904
1ff TRANSISTOR SMD MARKING CODE
smd transistor 5c sot-23
NB ad smd transistor
SMD TRANSISTOR MARKING 6C
SMD TRANSISTOR MARKING 5c npn
smd dual diode marking code AH sot-23
BC548 TRANSISTOR SMD
smd diode ZENER marking code BC
marking code diode C1J SMD
SMD TRANSISTOR MARKING c1p
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556cn
Abstract: MMQA20VTI MMQA20VT1 TA525 motorola diode smb
Text: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document bv MMQA5V6T1/D DATA — MMQA5V6TI 5.6 Volt SC=59 Quad Monolithic Common Anode I ~ Transient Voltage Suppressor for ESD Protection This quad monolithic silicon voltage suppressor is designed for applications
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SC-59
140W1-2M7
0W5214315
2PHXW051
lZ951MPERWLlTH0
556cn
MMQA20VTI
MMQA20VT1
TA525
motorola diode smb
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MT 6236
Abstract: Transistor WIG 10NO2Z woy transistor AN569 zener diod MARKING S04 diod zener
Text: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document bv MMSF1ONO22D DATA DesignerSTM Data Sheet - I I Medium Power Surface Mount Products TMOS Single N-Channel with Monolithic Zener ESD Protected Gate EZFETSTM are an advanced series of power MOSFETS which
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MMSF1ONO22D
2W609
MT 6236
Transistor WIG
10NO2Z
woy transistor
AN569
zener diod
MARKING S04
diod zener
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*14315 transistor
Abstract: MMDF3P03HDR2 AN569 MMDF3P03HD dual slope adc motorola notes FET MOSFET transistor ""
Text: MOTOROLA SEMICONDUCTOR Advance —. TECHNICAL Order this document bv MMDF3P03HD/D DATA Information ~ Medium Power Surface Mount Products TMOS Dual P-Channel Field Effect ~ansistors Dual HDTMOS devices are an advanced series of power MOSFETS which utilize Motorola’s
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MMDF3P03HD/D
14W1-2
852-2M29296
MMDF3P03HDm
*14315 transistor
MMDF3P03HDR2
AN569
MMDF3P03HD
dual slope adc motorola notes
FET MOSFET transistor ""
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ATV2500BL-25JI
Abstract: SMD fuse BA
Text: ATV2500B/ BV Features • • • • • • • • • High Performance, High Density Programmable Logic Device Typical 9 ns Pin-to-Pin Delay Fully Connected Logic Array With 416 Product Terms Flexible Output Macrocell 48 Flip-Flops - Two per Macrocell
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ATV2500B/
ATV2500BL
ATV2500BVL
ATV2500H/L
40-Pin
Military/883C
ATV2500BVL-30JC
ATV2500BVL-30
ATV2500BVL-30LC
ATV2500BL-25JI
SMD fuse BA
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2N2222
Abstract: 6C556 BCw610
Text: SMDTransistors SOT-23 Case 350mW Proelectron Series— Confd TYPE NO. BC8586 DESCRIPTION PNP LOW NOISE v n o VOLTS BV ceo (VOLTS) BVebo (VOLTS) MW MM MM m MAX 30 30 50 15 fCBO (^ ci (VOLTS) ftpE « MM MAX 30 220 475 V« (VOLTS) Vc í (SA T)« (mA> (VOUS)
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OT-23
350mW
BC8586
BC858C
BC859
BC85SA
BC859B
BC859C
8C860
8C860A
2N2222
6C556
BCw610
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TNY287
Abstract: TNY288 TNY285 tny 175 pn TNY287-288 Tny 178 PN tny 290 TNY290P TNY289-290 TNY287D
Text: TNY284-290 TinySwitch-4 Family Energy-Efficient, Off-Line Switcher With Line Compensated Overload Power Product Highlights Lowest System Cost with Enhanced Flexibility • 725 V rated MOSFET • Increases BV de-rating margin • Line compensated overload power – no additional components
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TNY284-290
TNY287
TNY288
TNY285
tny 175 pn
TNY287-288
Tny 178 PN
tny 290
TNY290P
TNY289-290
TNY287D
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f20 fuse
Abstract: ATV750BL-20DM
Text: ATV750B/BV Features • Advanced, High Speed Programmable Logic Device Improved Performance • 10 ns Tpd , 100 MHz operation Enhanced Logic Flexibility Backward Compatible with ATV750/L Software and Hardware • New Flip-Flop Features D- or T-Type Product Term or Direct Input Pin Clocking
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ATV750B/BV
ATV750/L
24-Pln
ATV750BL
ATV750BVL
24-Pln,
24-Lead
28-Lead
ATVL-25G
M/883
f20 fuse
ATV750BL-20DM
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PDF
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MOSFET Selection Guide
Abstract: TO257AA t0-205af TO254AA FSj264
Text: Rad Hard Power MOSFET Selection Guide N-Channel PACKAGE BV d s s V rDS(ON) (£!) ' d (A) FSL110D, FSL110R PART NUMBER T0-205AF 100 0.600 3.5 FSL13AOD, FSL13AOR TO-205AF 100 0.180 9 FSL23AOD, FSL23AOR TO-205AF 200 0.350 6 FSL23A4D, FSL23A4R T0-205AF 250 0.480
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FSL110D,
FSL110R
FSL13AOD,
FSL13AOR
FSL23AOD,
FSL23AOR
FSL23A4D,
FSL23A4R
FSL130D,
FSL130R
MOSFET Selection Guide
TO257AA
t0-205af
TO254AA
FSj264
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PDF
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I-348
Abstract: i348 TIR31 i346 IRFM360 IRFM360D IRFM360U I*348 9712A
Text: Data Sheet No. PD-9.712A INTERNATIONAL RECTIFIER i R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR ài IRFM360 N-CHANNEL 400 Volt, 0.20 Ohm HEXFET Product Summary T h e HEXFE T® technology is the key to International Part N um ber BV q s S
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IRFM360
IRFM360D
IRFM360U
O-254
MIL-S-19500
I-348
i348
TIR31
i346
IRFM360
IRFM360U
I*348
9712A
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PDF
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MMBD201
Abstract: BD201 bd2010 BD301 MMBD2010 318D-03 MMBD101 MMBD2010T1 DIODE WJ SOt23 MMBD3010T1
Text: MOTOROLA SEMICONDUCTOR — TECHNICAL Order this document bv MMBDIOIOLT1/D DATA MMBDIOIOLTI MMBD2010T~ Switching Diode Pad of the GreenMneTM Portfolio of devices with energy+onsewing traits. This switching diode has the following features: Very Low Leakage s 500 PA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
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MMBD2010T~
2PHX34593F+
MMBD201
BD201
bd2010
BD301
MMBD2010
318D-03
MMBD101
MMBD2010T1
DIODE WJ SOt23
MMBD3010T1
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PDF
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DAC8408BT
Abstract: D-10 E1513 cpvf
Text: R E V IS IO N S rr LTR APPROVED DATE VR-MO-DA DESCRIPTION ri REV SHEET REV SH EET REV STATUS OF SH EETS REV SHEET 1 3 4 PREPARED BY PMIC N/A STANDARDIZED MILITARY DRAWING 2 . O J fe tJ i— CHJ ^ Bv 5 6 7 8 AMSC N/A 11 12 13 „ DEFENSE ELECTRONICS SUPPLY CENTER
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E1513
5962-8967801XX
DAC8408AT/883
5962-8967802XX
DAC8408BT/883
19M-550-S47
DAC8408BT
D-10
E1513
cpvf
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PDF
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B60C 800 Si
Abstract: 0/B60C 800 Si
Text: 1 I n t e r n a t io n a l R e c t i f i e r G o v e rn m e n t a n d S p a c e P ro d u c ts Paît Number 2 BV[)SS (Volts) RDS(on) (Ohms) Ip • Tc°25° (Amps) Id 9 TC«100" (Amps) Total Dos* Rating Rads (Si) Pd O Tc=25* (Watts) 15 7 15.3 12.7 6.0 24.3
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IRHN7254SE
IRHN7450SE
IRHNA73b
IRHNA7460SE
IRHN7C50SE
IRHNA7264SE
IRH72545E
IRHM7264SE
IRH7450SE
IRH7C50SE
B60C 800 Si
0/B60C 800 Si
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PDF
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Multimeter tektronix dmm 155
Abstract: No abstract text available
Text: Pomoi Bv Your Side Or At Your fingertips Filled With Quality for The World’s Leading Test Instrumentation M o d e l 4 5 5 0 A S e m iM o d u la r O s c illo s c o p e P ro n e d e s ig n a llo w s c o m p o n e n t re p la c e m e n t :0 100. 2 0 0 a n d
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CS 20A RoHS
Abstract: No abstract text available
Text: 2. S c h e m a t ic : 1. M e c h a n ic a l D im e n s io n s : S e conda ry 0 .0 1 8 ± 0 .0 0 2 C 0 .2 5 0 Max E 0.100 XFMRS r> X F 0 1 9 6 2 -2 0 A • YYWW bV in 03 x CM 1 2 o □ 3 o u CM 6 O CQ K o o 4 P rim a ry 3. Electrical Specifications: Y Y jZ
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XF01962
MIL-STD-202G,
UL94V-0
E151556
102mm)
100KHz
3000Vac,
UL1950
May-14-07
CS 20A RoHS
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PDF
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Untitled
Abstract: No abstract text available
Text: Low VF SMD Schottky Barrier Diode CDBQC0240L-HF I o = 200 mA V R = 40 Volts RoHS Device Halogen Free 0402C/SOD-923F Features 0.041 1.05 0.037(0.95) - Low forward voltage. - Designed for mounting on small surface. - Extremely thin package. - Majority carrier conduction.
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CDBQC0240L-HF
0402C/SOD-923F
0402/SOD-923F
MIL-STD-750
QW-G1112
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