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Catalog Datasheet	MFG & Type	PDF	Document Tags
transistor f422 Abstract: transistor f423 f422 transistor transistor f421 BV09 F423 fet 13187 RJ4B L442 bvoe Text: CMOS-8LCX 3-VOLT, 0.50-MICRON CMOS GATE ARRAYS CROSSCHECK TEST SUPPORT NEC Electronics Inc. Preliminary Description October 1993 Figure 1. Various CMOS-8LCX Packages NEC’s 3-volt CMOS-8LCX family consists of ultra-high performance, sub-micron gate arrays, targeted for	Original	PDF	50-MICRON PD658xx transistor f422 transistor f423 f422 transistor transistor f421 BV09 F423 fet 13187 RJ4B L442 bvoe
bv0T Abstract: F423 FV06 RJ4B 83YL-9164B "Single-Port RAM" B00J transistor f423 bewf diode ru4d Text: CMOS-8L 3-VOLT, 0.50-MICRON CMOS GATE ARRAYS NEC Electronics Inc. Preliminary Description October 1993 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS-8L family consists of ultra-high performance, sub-micron gate arrays, targeted for applications requiring extensive integration and high	Original	PDF	50-MICRON PD658xx bv0T F423 FV06 RJ4B 83YL-9164B "Single-Port RAM" B00J transistor f423 bewf diode ru4d
bv0T Abstract: L442 S964 yn 1018 f57a S774 5 input nand gate TB 1226 EN NEC 2705 L-6034 Text: お客様各位カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジが合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社	Original	PDF	PD6782X PD6783X A11957XJ2V1UM00 bv0T L442 S964 yn 1018 f57a S774 5 input nand gate TB 1226 EN NEC 2705 L-6034
bv0T Abstract: bv0e NEC L213 FO09B2 f57a EB S913 l914 F204A L462 D1H01 Text: お客様各位カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジが合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社	Original	PDF	PD6782X PD6783X A11957XJ2V0UM00 bv0T bv0e NEC L213 FO09B2 f57a EB S913 l914 F204A L462 D1H01
A12212 Abstract: 702 sot 23 74284 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 364-pin A12-212 circuit diagram for simple IR robots marking h02 sot 363 RBHB RSB 7900 Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	PDF	d588-6130 A12212 702 sot 23 74284 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 364-pin A12-212 circuit diagram for simple IR robots marking h02 sot 363 RBHB RSB 7900
se617 Abstract: SE641 transistor f423 sd667 transistor hh 004 transistor f422 bv0T F423 n010x L442 Text: Block Library CMOS-9HD Family, EA-9HD Family CMOS Gate Array, CMOS Embedded Array Ver.6.0 Document No. Date Published A13052EJ6V0BL00 6th edition December 2000 NS CP(K) NEC Corporation 1997 Printed in Japan [MEMO] Block Library A13052EJ6V0BL Summary of Contents	Original	PDF	A13052EJ6V0BL00 A13052EJ6V0BL se617 SE641 transistor f423 sd667 transistor hh 004 transistor f422 bv0T F423 n010x L442
MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR Abstract: uPD65837 uPD65869 X17512 upd65839 RF Transistors Ceramic MARKING F25 marking code F302 535 D65841 uPD65851 X46358 Text: Design Manual CMOS-8L Family CMOS Gate Array Ver. 5.0 Document No. A12158EJ5V0DM00 5th edition Date Published June 1999 N CP(K) 1997, 1998 Printed in Japan 1 [MEMO] 2 Design Manual A12158EJ5V0DM00 NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS	Original	PDF	A12158EJ5V0DM00 Semiconductor2/9044 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR uPD65837 uPD65869 X17512 upd65839 RF Transistors Ceramic MARKING F25 marking code F302 535 D65841 uPD65851 X46358
bv0T Abstract: 658X Text: N E C ELECTRONICS INC b7E D • b4E75S5 QQ3T701 4bD HINECE CMOS-8L 3 -V O LT, 0.50-M IC R O N cm os g a te a r r a y s ä I M t L NEC Electronics Inc. P re lim in a r y Description October 1993 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS-8L family consists of ultra-high per	OCR Scan	PDF	b4E75S5 QQ3T701 nPD658xx bv0T 658X