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    BX0 TRANSISTOR Search Results

    BX0 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    BX0 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: NT5SV64M4AT NT5SV32M8AT NT5SV16M16AT 256Mb Synchronous DRAM Features • High Performance: -7K 3 CL=2 -75B, CL=3 -8B, CL=2 Units fCK Clock Frequency 133 133 100 MHz tCK Clock Cycle 7.5 7.5 10 ns tAC Clock Access Time 1 — — — ns tAC Clock Access Time 2


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    PDF NT5SV64M4AT NT5SV32M8AT NT5SV16M16AT 256Mb

    BL460

    Abstract: 2001hi NT5SV16M16AT-75B transistor t20 nt5sv32m8at-75b NT5SV16M16AT NT5SV32M8AT NT5SV64M4AT
    Text: NT5SV64M4AT L NT5SV32M8AT(L) NT5SV16M16AT(L) 256Mb Synchronous DRAM Features • • • • • • • • • • • • • High Performance: -7K 3 CL=2 -75B, CL=3 -8B, CL=2 Units fCK Clock Frequency 133 133 100 MHz tCK Clock Cycle 7.5 7.5 10 ns —


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    PDF NT5SV64M4AT NT5SV32M8AT NT5SV16M16AT 256Mb BL460 2001hi NT5SV16M16AT-75B transistor t20 nt5sv32m8at-75b

    NT56V6610C0T-75

    Abstract: NT56V6610C0T-8A NT56V6610C0T NT56V6610C0T-75B NT56V6610C0T-8B NT56V6620C0T
    Text: NT56V6610C0T NT56V6620C0T 64Mb : x8 x16 PC133 / PC100 Synchronous DRAM NT56V6610C0T 8Mx8 NT56V6620C0T (4Mx16) 64Mb Synchronous DRAM Data Sheet REV 1.1 April, 2000 1 NANYA TECHNOLOGY CORP. NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.


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    PDF NT56V6610C0T NT56V6620C0T PC133 PC100 NT56V6610C0T 4Mx16) NT56V6610C0T-75 NT56V6610C0T-8A NT56V6610C0T-75B NT56V6610C0T-8B NT56V6620C0T

    IBMN325164CT3

    Abstract: IBMN325404CT3 IBMN325804CT3
    Text: . IBMN325164CT3 IBMN325804CT3 IBMN325404CT3 256Mb Synchronous DRAM - Die Revision B Preliminary Features • High Performance: -75H3 -75D3 -75A, -260, -360, -10, Units CL=2 CL=3 CL=3 CL=2 CL=3 CL=3 fCK Clock Frequency 133 133 133 100 100 100 MHz tCK Clock Cycle


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    PDF IBMN325164CT3 IBMN325804CT3 IBMN325404CT3 256Mb -75H3 -75D3 06K0608 F39375A IBMN325404CT3 IBMN325804CT3

    IBMN312404CT3

    Abstract: IBMN312804CT3
    Text: . IBMN312164CT3 IBMN312804CT3 IBMN312404CT3 128Mb Synchronous DRAM - Die Revision B Preliminary Features • High Performance: -75H3 -75D3 -75A, -260, -360, -10, Units CL=2 CL=3 CL=3 CL=2 CL=3 CL=3 fCK Clock Frequency 133 133 133 100 100 100 MHz tCK Clock Cycle


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    PDF IBMN312164CT3 IBMN312804CT3 IBMN312404CT3 128Mb -75H3 -75D3 06K7582 H03335A IBMN312404CT3 IBMN312804CT3

    NT5SV16M16AT

    Abstract: NT5SV32M8AT NT5SV64M4AT
    Text: NT5SV64M4AT NT5SV32M8AT NT5SV16M16AT NT5SV64M4AW NT5SV32M8AW NT5SV16M16AW 256Mb Synchronous DRAM Features • • • • • • • • • • • • • • • High Performance: -7K 3 CL=2 -75B, CL=3 -8B, CL=2 Units fCK Clock Frequency 133 133 100 MHz


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    PDF NT5SV64M4AT NT5SV32M8AT NT5SV16M16AT NT5SV64M4AW NT5SV32M8AW NT5SV16M16AW 256Mb NT5SV16M16AT NT5SV32M8AT NT5SV64M4AT

    IBMN312404CT3

    Abstract: IBMN312804CT3 IBMN312804CT3B-75H
    Text: . IBMN312164CT3 IBMN312804CT3 IBMN312404CT3 128Mb Synchronous DRAM - Die Revision B Preliminary Features • Programmable CAS Latency: 2, 3 • High Performance: -75H3 -75D 3 -75A, -260, -360, -10, Units CL=2 CL=3 CL=3 CL=2 CL=3 CL=3 fCK Clock Frequency tCK Clock Cycle


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    PDF IBMN312164CT3 IBMN312804CT3 IBMN312404CT3 128Mb -75H3 06K7582 H03335A IBMN312404CT3 IBMN312804CT3 IBMN312804CT3B-75H

    nt5sv32m8at-75b

    Abstract: NT5SV16M16AT NT5SV32M8AT NT5SV64M4AT DRAMs
    Text: NT5SV64M4AT NT5SV32M8AT NT5SV16M16AT NT5SV64M4AW NT5SV32M8AW NT5SV16M16AW 256Mb Synchronous DRAM Features • • • • • • • • • • • • • • • High Performance: -7K 3 CL=2 -75B, CL=3 -8B, CL=2 Units fCK Clock Frequency 133 133 100 MHz


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    PDF NT5SV64M4AT NT5SV32M8AT NT5SV16M16AT NT5SV64M4AW NT5SV32M8AW NT5SV16M16AW 256Mb nt5sv32m8at-75b NT5SV16M16AT NT5SV32M8AT NT5SV64M4AT DRAMs

    Untitled

    Abstract: No abstract text available
    Text: NT56V6610C0T NT56V6620C0T 64Mb PC133 / PC100 Synchronous DRAM NT56V6610C0T 8Mx8 NT56V6620C0T (4Mx16) 64Mb Synchronous DRAM Data Sheet REV 1.0 SEP, 1999 1 NANYA TECHNOLOGY CORP. NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.


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    PDF NT56V6610C0T NT56V6620C0T PC133 PC100 NT56V6610C0T 4Mx16)

    IBM0312404

    Abstract: IBM03124B4 IBM0312804
    Text: . IBM0312164 IBM0312804 IBM0312404 IBM03124B4 128Mb Synchronous DRAM - Die Revision B Advance 0.1 Features • High Performance: -75H3 -75D3 -75A, -260, -360, -10, Units CL=2 CL=3 CL=3 CL=2 CL=3 CL=3 fCK Clock Frequency 133 133 133 100 100 100 MHz tCK Clock Cycle


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    PDF IBM0312164 IBM0312804 IBM0312404 IBM03124B4 128Mb -75H3 -75D3 06K7582 H03335. IBM03124B4 IBM0312804

    IBM03254K4

    Abstract: IBM0325164 IBM DATE CODE
    Text: . IBM0325164 IBM0325804 IBM0325404 IBM03254K4 256Mb Synchronous DRAM - Die Revision B Advance Rev 0.1 Features • High Performance: -75H3 -75D3 -75A, -260, -360, -10, Units CL=2 CL=3 CL=3 CL=2 CL=3 CL=3 fCK Clock Frequency 133 133 133 100 100 100 MHz tCK Clock Cycle


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    PDF IBM0325164 IBM0325804 IBM0325404 IBM03254K4 256Mb -75H3 -75D3 06K0608 F39375. IBM03254K4 IBM DATE CODE

    NT56V6610C0T-8A

    Abstract: nanya part guide 56 NT56V6610C0T-8B NT56V6610C0T-75B NT56V6610C0T NT56V6610C0T-75 NT56V6620C0T NT56V6620C0T-8A
    Text: NT56V6610C0T NT56V6620C0T 64Mb : x8 x16 PC133 / PC100 Synchronous DRAM NT56V6610C0T 8Mx8 NT56V6620C0T (4Mx16) 64Mb Synchronous DRAM Data Sheet REV 1.1 June, 2000 1 NANYA TECHNOLOGY CORP. NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.


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    PDF NT56V6610C0T NT56V6620C0T PC133 PC100 4Mx16) NT56V6610C0T-8A nanya part guide 56 NT56V6610C0T-8B NT56V6610C0T-75B NT56V6610C0T NT56V6610C0T-75 NT56V6620C0T NT56V6620C0T-8A

    IBM03254B4CT3A-75A

    Abstract: No abstract text available
    Text: . IBM0325404 IBM0325804 IBM0325164 IBM03254B4 256Mb Synchronous DRAM - Die Revision A Features • High Performance: -75A -260, -360, -10, Units CL=3 CL=2 CL=3 CL=3 fCK Clock Frequency 133 100 100 100 MHz tCK Clock Cycle 7.5 10 10 10 ns tAC Clock Access Time1


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    PDF IBM0325404 IBM0325804 IBM0325164 IBM03254B4 256Mb IBM03254B4CT3A-75A

    ibm T22

    Abstract: IBM0316169C IBM0316809C 22TCK SDRAM 1996
    Text: IBM0316409C 4M x 412/10, 3.3V, SR. IBM0316169C 1M x 1612/8, 3.3V, SR. IBM0316809C 2M x 812/9, 3.3V, SR. IBM0316409C IBM0316809C IBM0316169C 16Mbit Synchronous DRAM Features • High Performance: • Multiple Burst Read with Single Write Option CAS latency = 3


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    PDF IBM0316409C IBM0316169C IBM0316809C IBM0316809C IBM0316169C 16Mbit ibm T22 22TCK SDRAM 1996

    IBM0316809C

    Abstract: ibm T22 IBM0316169C cmos dram T20 96 diode
    Text: . IBM0316169C IBM0316409C IBM0316809C 16Mb Synchronous DRAM Features • High Performance: • Multiple Burst Read with Single Write Option -10 CL=3 -12 CL=3 Units • Automatic and Controlled Precharge Command fCK Clock Frequency 100 83 MHz • Data Mask for Read/Write control x4,x8


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    PDF IBM0316169C IBM0316409C IBM0316809C cycles/64ms IBM0316809C ibm T22 cmos dram T20 96 diode

    IBMN364804

    Abstract: IBMN364164 IBMN364164CT3C-68 IBMN364404 IBMN364804CT3C260 IBMN364804CT3C360
    Text: . IBMN364164 IBMN364804 IBMN364404 64Mb Synchronous DRAM - Die Revision C Features • High Performance: -68 -75A, -260, -360, Units CL=3 CL=3 CL=2 CL=3 fCK Clock Frequency 150 133 100 100 MHz tCK Clock Cycle 6.67 7.5 10 10 ns tAC Clock Access Time1 6 —


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    PDF IBMN364164 IBMN364804 IBMN364404 A12/A13 19L3265 E35856B IBMN364804 IBMN364164CT3C-68 IBMN364404 IBMN364804CT3C260 IBMN364804CT3C360

    IBMN364804

    Abstract: No abstract text available
    Text: . IBMN364164 IBMN364804 IBMN364404 64Mb Synchronous DRAM - Die Revision C Features • High Performance: -68 -75A, -260, -360, Units CL=3 CL=3 CL=2 CL=3 fCK Clock Frequency 150 133 100 100 MHz tCK Clock Cycle 6.67 7.5 10 10 ns tAC Clock Access Time1 6 —


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    PDF IBMN364164 IBMN364804 IBMN364404 A12/A13 19L3265 E35856B

    ibm0312804ct3a-260

    Abstract: IBM0312804CT3A360 IBM0312404 IBM03124B4 IBM0312804 IBM0312404CT3A IBM0312804CT3A-75A ibm dram IBM0312804CT3A-360
    Text: . IBM0312804 IBM0312164 IBM0312404 IBM03124B4 128Mb Synchronous DRAM - Die Revision A Features • High Performance: -75A, CL=3 -260, CL=2 fCK Clock Frequency 133 100 100 100 MHz tCK Clock Cycle 7.5 10 10 10 ns Time1 — — — 7 ns tAC Clock Access Time2


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    PDF IBM0312804 IBM0312164 IBM0312404 IBM03124B4 128Mb ibm0312804ct3a-260 IBM0312804CT3A360 IBM03124B4 IBM0312404CT3A IBM0312804CT3A-75A ibm dram IBM0312804CT3A-360

    IBM0364404CT3C360

    Abstract: IBM0364404CT3C10
    Text: . IBM0364804 IBM0364164 IBM0364404 IBM03644B4 64Mb Synchronous DRAM - Die Revision C Features • High Performance: -68 -75A, -260, -360, -10, Units CL=3 CL=3 CL=2 CL=3 CL=3 fCK Clock Frequency 150 133 100 100 100 MHz tCK Clock Cycle 6.67 7.5 10 10 10 ns tAC Clock Access Time1


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    PDF IBM0364804 IBM0364164 IBM0364404 IBM03644B4 A12/A13 19L3265 E35856B IBM0364404CT3C360 IBM0364404CT3C10

    IBM03641644M

    Abstract: IBM036440416M IBM03644B432M IBM03648048M
    Text: Discontinued 8/99 - last order; 12/99 - last ship IBM036440416M x 412/10/2, 3.3V 72. IBM03644B432M x 412/10/2, 3.3V 72. IBM03641644M x 1612/8/2, 3.3V 72. IBM03648048M x 412/9/2, 3.3V 72. IBM0364804 IBM0364164 IBM0364404 IBM03644B4 64Mb Synchronous DRAM - Die Revision B


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    PDF IBM036440416M IBM03644B432M IBM03641644M IBM03648048M IBM0364804 IBM0364164 IBM0364404 IBM03644B4

    transistor cay

    Abstract: No abstract text available
    Text: . IBM0325404 IBM0325804 IBM0325164 IBM03254B4 256Mb Synchronous DRAM - Die Revision A EC Update -10 Features • High Performance: -75A -260, -360, -10, Units CL=3 CL=2 CL=3 CL=3 fCK Clock Frequency 133 100 100 100 MHz tCK Clock Cycle 7.5 10 10 10 ns tAC Clock Access Time1


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    PDF IBM0325404 IBM0325804 IBM0325164 IBM03254B4 256Mb transistor cay

    IBMN364164

    Abstract: IBMN364804 IBMN364164CT3C-68 IBMN364404 IBMN364164CT3C-360
    Text: . IBMN364164 IBMN364804 IBMN364404 64Mb Synchronous DRAM - Die Revision C Features • Programmable Wrap: Sequential or Interleave • High Performance: -68 -75A, -260, -360, Units CL=3 CL=3 CL=2 CL=3 fCK Clock Frequency 150 133 100 100 MHz tCK Clock Cycle


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    PDF IBMN364164 IBMN364804 IBMN364404 19L3265 E35856B IBMN364804 IBMN364164CT3C-68 IBMN364404 IBMN364164CT3C-360

    IBM0364804CT3C-360

    Abstract: IBM0364404CT3C-10 IBM0364164CT3C360 IBM0364164 IBMN364804 ibm dram
    Text: . IBM0364804 IBM0364164 IBM0364404 IBM03644B4 64Mb Synchronous DRAM - Die Revision C Features • High Performance: -68 -75A, -260, -360, -10, Units CL=3 CL=3 CL=2 CL=3 CL=3 fCK Clock Frequency 150 133 100 100 100 MHz tCK Clock Cycle 6.67 7.5 10 10 10 ns tAC Clock Access Time1


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    PDF IBM0364804 IBM0364164 IBM0364404 IBM03644B4 A12/A13 19L3265 E35856B IBM0364804CT3C-360 IBM0364404CT3C-10 IBM0364164CT3C360 IBMN364804 ibm dram

    tsop-54

    Abstract: sam av2 sdram 4 bank 4096 16 T4 PN diode IBM0364404CT3B10
    Text: . IBM0364404 IBM0364804 IBM0364164 IBM03644B4 64Mb Synchronous DRAM - Die Revision B Preliminary Features • Multiple Burst Read with Single Write Option • Automatic and Controlled Precharge Command • High Performance: -260, CL=2,3 -360, CL=3 -10, CL=3


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    PDF IBM0364404 IBM0364804 IBM0364164 IBM03644B4 tsop-54 sam av2 sdram 4 bank 4096 16 T4 PN diode IBM0364404CT3B10