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    BX0 TRANSISTOR Search Results

    BX0 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    BX0 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: NT5SV64M4AT NT5SV32M8AT NT5SV16M16AT 256Mb Synchronous DRAM Features • High Performance: -7K 3 CL=2 -75B, CL=3 -8B, CL=2 Units fCK Clock Frequency 133 133 100 MHz tCK Clock Cycle 7.5 7.5 10 ns tAC Clock Access Time 1 — — — ns tAC Clock Access Time 2


    Original     		NT5SV64M4AT NT5SV32M8AT NT5SV16M16AT 256Mb PDF

    BL460

    Abstract: 2001hi NT5SV16M16AT-75B transistor t20 nt5sv32m8at-75b NT5SV16M16AT NT5SV32M8AT NT5SV64M4AT
    Text: NT5SV64M4AT L NT5SV32M8AT(L) NT5SV16M16AT(L) 256Mb Synchronous DRAM Features • • • • • • • • • • • • • High Performance: -7K 3 CL=2 -75B, CL=3 -8B, CL=2 Units fCK Clock Frequency 133 133 100 MHz tCK Clock Cycle 7.5 7.5 10 ns —


    Original     		NT5SV64M4AT NT5SV32M8AT NT5SV16M16AT 256Mb BL460 2001hi NT5SV16M16AT-75B transistor t20 nt5sv32m8at-75b PDF

    NT56V6610C0T-75

    Abstract: NT56V6610C0T-8A NT56V6610C0T NT56V6610C0T-75B NT56V6610C0T-8B NT56V6620C0T
    Text: NT56V6610C0T NT56V6620C0T 64Mb : x8 x16 PC133 / PC100 Synchronous DRAM NT56V6610C0T 8Mx8 NT56V6620C0T (4Mx16) 64Mb Synchronous DRAM Data Sheet REV 1.1 April, 2000 1 NANYA TECHNOLOGY CORP. NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.


    Original     		NT56V6610C0T NT56V6620C0T PC133 PC100 NT56V6610C0T 4Mx16) NT56V6610C0T-75 NT56V6610C0T-8A NT56V6610C0T-75B NT56V6610C0T-8B NT56V6620C0T PDF

    IBMN325164CT3

    Abstract: IBMN325404CT3 IBMN325804CT3
    Text: . IBMN325164CT3 IBMN325804CT3 IBMN325404CT3 256Mb Synchronous DRAM - Die Revision B Preliminary Features • High Performance: -75H3 -75D3 -75A, -260, -360, -10, Units CL=2 CL=3 CL=3 CL=2 CL=3 CL=3 fCK Clock Frequency 133 133 133 100 100 100 MHz tCK Clock Cycle


    Original     		IBMN325164CT3 IBMN325804CT3 IBMN325404CT3 256Mb -75H3 -75D3 06K0608 F39375A IBMN325404CT3 IBMN325804CT3 PDF

    IBMN312404CT3

    Abstract: IBMN312804CT3
    Text: . IBMN312164CT3 IBMN312804CT3 IBMN312404CT3 128Mb Synchronous DRAM - Die Revision B Preliminary Features • High Performance: -75H3 -75D3 -75A, -260, -360, -10, Units CL=2 CL=3 CL=3 CL=2 CL=3 CL=3 fCK Clock Frequency 133 133 133 100 100 100 MHz tCK Clock Cycle


    Original     		IBMN312164CT3 IBMN312804CT3 IBMN312404CT3 128Mb -75H3 -75D3 06K7582 H03335A IBMN312404CT3 IBMN312804CT3 PDF

    NT5SV16M16AT

    Abstract: NT5SV32M8AT NT5SV64M4AT
    Text: NT5SV64M4AT NT5SV32M8AT NT5SV16M16AT NT5SV64M4AW NT5SV32M8AW NT5SV16M16AW 256Mb Synchronous DRAM Features • • • • • • • • • • • • • • • High Performance: -7K 3 CL=2 -75B, CL=3 -8B, CL=2 Units fCK Clock Frequency 133 133 100 MHz


    Original     		NT5SV64M4AT NT5SV32M8AT NT5SV16M16AT NT5SV64M4AW NT5SV32M8AW NT5SV16M16AW 256Mb NT5SV16M16AT NT5SV32M8AT NT5SV64M4AT PDF

    IBMN312404CT3

    Abstract: IBMN312804CT3 IBMN312804CT3B-75H
    Text: . IBMN312164CT3 IBMN312804CT3 IBMN312404CT3 128Mb Synchronous DRAM - Die Revision B Preliminary Features • Programmable CAS Latency: 2, 3 • High Performance: -75H3 -75D 3 -75A, -260, -360, -10, Units CL=2 CL=3 CL=3 CL=2 CL=3 CL=3 fCK Clock Frequency tCK Clock Cycle


    Original     		IBMN312164CT3 IBMN312804CT3 IBMN312404CT3 128Mb -75H3 06K7582 H03335A IBMN312404CT3 IBMN312804CT3 IBMN312804CT3B-75H PDF

    nt5sv32m8at-75b

    Abstract: NT5SV16M16AT NT5SV32M8AT NT5SV64M4AT DRAMs
    Text: NT5SV64M4AT NT5SV32M8AT NT5SV16M16AT NT5SV64M4AW NT5SV32M8AW NT5SV16M16AW 256Mb Synchronous DRAM Features • • • • • • • • • • • • • • • High Performance: -7K 3 CL=2 -75B, CL=3 -8B, CL=2 Units fCK Clock Frequency 133 133 100 MHz


    Original     		NT5SV64M4AT NT5SV32M8AT NT5SV16M16AT NT5SV64M4AW NT5SV32M8AW NT5SV16M16AW 256Mb nt5sv32m8at-75b NT5SV16M16AT NT5SV32M8AT NT5SV64M4AT DRAMs PDF

    Untitled

    Abstract: No abstract text available
    Text: NT56V6610C0T NT56V6620C0T 64Mb PC133 / PC100 Synchronous DRAM NT56V6610C0T 8Mx8 NT56V6620C0T (4Mx16) 64Mb Synchronous DRAM Data Sheet REV 1.0 SEP, 1999 1 NANYA TECHNOLOGY CORP. NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.


    Original     		NT56V6610C0T NT56V6620C0T PC133 PC100 NT56V6610C0T 4Mx16) PDF

    IBM0312404

    Abstract: IBM03124B4 IBM0312804
    Text: . IBM0312164 IBM0312804 IBM0312404 IBM03124B4 128Mb Synchronous DRAM - Die Revision B Advance 0.1 Features • High Performance: -75H3 -75D3 -75A, -260, -360, -10, Units CL=2 CL=3 CL=3 CL=2 CL=3 CL=3 fCK Clock Frequency 133 133 133 100 100 100 MHz tCK Clock Cycle


    Original     		IBM0312164 IBM0312804 IBM0312404 IBM03124B4 128Mb -75H3 -75D3 06K7582 H03335. IBM03124B4 IBM0312804 PDF

    IBM03254K4

    Abstract: IBM0325164 IBM DATE CODE
    Text: . IBM0325164 IBM0325804 IBM0325404 IBM03254K4 256Mb Synchronous DRAM - Die Revision B Advance Rev 0.1 Features • High Performance: -75H3 -75D3 -75A, -260, -360, -10, Units CL=2 CL=3 CL=3 CL=2 CL=3 CL=3 fCK Clock Frequency 133 133 133 100 100 100 MHz tCK Clock Cycle


    Original     		IBM0325164 IBM0325804 IBM0325404 IBM03254K4 256Mb -75H3 -75D3 06K0608 F39375. IBM03254K4 IBM DATE CODE PDF

    NT56V6610C0T-8A

    Abstract: nanya part guide 56 NT56V6610C0T-8B NT56V6610C0T-75B NT56V6610C0T NT56V6610C0T-75 NT56V6620C0T NT56V6620C0T-8A
    Text: NT56V6610C0T NT56V6620C0T 64Mb : x8 x16 PC133 / PC100 Synchronous DRAM NT56V6610C0T 8Mx8 NT56V6620C0T (4Mx16) 64Mb Synchronous DRAM Data Sheet REV 1.1 June, 2000 1 NANYA TECHNOLOGY CORP. NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.


    Original     		NT56V6610C0T NT56V6620C0T PC133 PC100 4Mx16) NT56V6610C0T-8A nanya part guide 56 NT56V6610C0T-8B NT56V6610C0T-75B NT56V6610C0T NT56V6610C0T-75 NT56V6620C0T NT56V6620C0T-8A PDF

    IBM03254B4CT3A-75A

    Abstract: No abstract text available
    Text: . IBM0325404 IBM0325804 IBM0325164 IBM03254B4 256Mb Synchronous DRAM - Die Revision A Features • High Performance: -75A -260, -360, -10, Units CL=3 CL=2 CL=3 CL=3 fCK Clock Frequency 133 100 100 100 MHz tCK Clock Cycle 7.5 10 10 10 ns tAC Clock Access Time1


    Original     		IBM0325404 IBM0325804 IBM0325164 IBM03254B4 256Mb IBM03254B4CT3A-75A PDF

    ibm T22

    Abstract: IBM0316169C IBM0316809C 22TCK SDRAM 1996
    Text: IBM0316409C 4M x 412/10, 3.3V, SR. IBM0316169C 1M x 1612/8, 3.3V, SR. IBM0316809C 2M x 812/9, 3.3V, SR. IBM0316409C IBM0316809C IBM0316169C 16Mbit Synchronous DRAM Features • High Performance: • Multiple Burst Read with Single Write Option CAS latency = 3


    Original     		IBM0316409C IBM0316169C IBM0316809C IBM0316809C IBM0316169C 16Mbit ibm T22 22TCK SDRAM 1996 PDF

    IBM0316809C

    Abstract: ibm T22 IBM0316169C cmos dram T20 96 diode
    Text: . IBM0316169C IBM0316409C IBM0316809C 16Mb Synchronous DRAM Features • High Performance: • Multiple Burst Read with Single Write Option -10 CL=3 -12 CL=3 Units • Automatic and Controlled Precharge Command fCK Clock Frequency 100 83 MHz • Data Mask for Read/Write control x4,x8


    Original     		IBM0316169C IBM0316409C IBM0316809C cycles/64ms IBM0316809C ibm T22 cmos dram T20 96 diode PDF

    IBMN364804

    Abstract: IBMN364164 IBMN364164CT3C-68 IBMN364404 IBMN364804CT3C260 IBMN364804CT3C360
    Text: . IBMN364164 IBMN364804 IBMN364404 64Mb Synchronous DRAM - Die Revision C Features • High Performance: -68 -75A, -260, -360, Units CL=3 CL=3 CL=2 CL=3 fCK Clock Frequency 150 133 100 100 MHz tCK Clock Cycle 6.67 7.5 10 10 ns tAC Clock Access Time1 6 —


    Original     		IBMN364164 IBMN364804 IBMN364404 A12/A13 19L3265 E35856B IBMN364804 IBMN364164CT3C-68 IBMN364404 IBMN364804CT3C260 IBMN364804CT3C360 PDF

    IBMN364804

    Abstract: No abstract text available
    Text: . IBMN364164 IBMN364804 IBMN364404 64Mb Synchronous DRAM - Die Revision C Features • High Performance: -68 -75A, -260, -360, Units CL=3 CL=3 CL=2 CL=3 fCK Clock Frequency 150 133 100 100 MHz tCK Clock Cycle 6.67 7.5 10 10 ns tAC Clock Access Time1 6 —


    Original     		IBMN364164 IBMN364804 IBMN364404 A12/A13 19L3265 E35856B PDF

    ibm0312804ct3a-260

    Abstract: IBM0312804CT3A360 IBM0312404 IBM03124B4 IBM0312804 IBM0312404CT3A IBM0312804CT3A-75A ibm dram IBM0312804CT3A-360
    Text: . IBM0312804 IBM0312164 IBM0312404 IBM03124B4 128Mb Synchronous DRAM - Die Revision A Features • High Performance: -75A, CL=3 -260, CL=2 fCK Clock Frequency 133 100 100 100 MHz tCK Clock Cycle 7.5 10 10 10 ns Time1 — — — 7 ns tAC Clock Access Time2


    Original     		IBM0312804 IBM0312164 IBM0312404 IBM03124B4 128Mb ibm0312804ct3a-260 IBM0312804CT3A360 IBM03124B4 IBM0312404CT3A IBM0312804CT3A-75A ibm dram IBM0312804CT3A-360 PDF

    IBM0364404CT3C360

    Abstract: IBM0364404CT3C10
    Text: . IBM0364804 IBM0364164 IBM0364404 IBM03644B4 64Mb Synchronous DRAM - Die Revision C Features • High Performance: -68 -75A, -260, -360, -10, Units CL=3 CL=3 CL=2 CL=3 CL=3 fCK Clock Frequency 150 133 100 100 100 MHz tCK Clock Cycle 6.67 7.5 10 10 10 ns tAC Clock Access Time1


    Original     		IBM0364804 IBM0364164 IBM0364404 IBM03644B4 A12/A13 19L3265 E35856B IBM0364404CT3C360 IBM0364404CT3C10 PDF

    IBM03641644M

    Abstract: IBM036440416M IBM03644B432M IBM03648048M
    Text: Discontinued 8/99 - last order; 12/99 - last ship IBM036440416M x 412/10/2, 3.3V 72. IBM03644B432M x 412/10/2, 3.3V 72. IBM03641644M x 1612/8/2, 3.3V 72. IBM03648048M x 412/9/2, 3.3V 72. IBM0364804 IBM0364164 IBM0364404 IBM03644B4 64Mb Synchronous DRAM - Die Revision B


    Original     		IBM036440416M IBM03644B432M IBM03641644M IBM03648048M IBM0364804 IBM0364164 IBM0364404 IBM03644B4 PDF

    transistor cay

    Abstract: No abstract text available
    Text: . IBM0325404 IBM0325804 IBM0325164 IBM03254B4 256Mb Synchronous DRAM - Die Revision A EC Update -10 Features • High Performance: -75A -260, -360, -10, Units CL=3 CL=2 CL=3 CL=3 fCK Clock Frequency 133 100 100 100 MHz tCK Clock Cycle 7.5 10 10 10 ns tAC Clock Access Time1


    Original     		IBM0325404 IBM0325804 IBM0325164 IBM03254B4 256Mb transistor cay PDF

    IBMN364164

    Abstract: IBMN364804 IBMN364164CT3C-68 IBMN364404 IBMN364164CT3C-360
    Text: . IBMN364164 IBMN364804 IBMN364404 64Mb Synchronous DRAM - Die Revision C Features • Programmable Wrap: Sequential or Interleave • High Performance: -68 -75A, -260, -360, Units CL=3 CL=3 CL=2 CL=3 fCK Clock Frequency 150 133 100 100 MHz tCK Clock Cycle


    Original     		IBMN364164 IBMN364804 IBMN364404 19L3265 E35856B IBMN364804 IBMN364164CT3C-68 IBMN364404 IBMN364164CT3C-360 PDF

    IBM0364804CT3C-360

    Abstract: IBM0364404CT3C-10 IBM0364164CT3C360 IBM0364164 IBMN364804 ibm dram
    Text: . IBM0364804 IBM0364164 IBM0364404 IBM03644B4 64Mb Synchronous DRAM - Die Revision C Features • High Performance: -68 -75A, -260, -360, -10, Units CL=3 CL=3 CL=2 CL=3 CL=3 fCK Clock Frequency 150 133 100 100 100 MHz tCK Clock Cycle 6.67 7.5 10 10 10 ns tAC Clock Access Time1


    Original     		IBM0364804 IBM0364164 IBM0364404 IBM03644B4 A12/A13 19L3265 E35856B IBM0364804CT3C-360 IBM0364404CT3C-10 IBM0364164CT3C360 IBMN364804 ibm dram PDF

    tsop-54

    Abstract: sam av2 sdram 4 bank 4096 16 T4 PN diode IBM0364404CT3B10
    Text: . IBM0364404 IBM0364804 IBM0364164 IBM03644B4 64Mb Synchronous DRAM - Die Revision B Preliminary Features • Multiple Burst Read with Single Write Option • Automatic and Controlled Precharge Command • High Performance: -260, CL=2,3 -360, CL=3 -10, CL=3


    Original     		IBM0364404 IBM0364804 IBM0364164 IBM03644B4 tsop-54 sam av2 sdram 4 bank 4096 16 T4 PN diode IBM0364404CT3B10 PDF