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    BYW 29 500 Search Results

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    byw 150

    Abstract: diode byw 81 200 diode BYW 66 BYW29 JESD22-B102D J-STD-002B
    Text: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time ITO-220AC TO-220AC • Low switching losses, high efficiency • Low forward voltage drop 2 BYW29 Series


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    PDF ITO-220AC O-220AC BYW29 J-STD-020C, O-263AB ITO-220AC 2002/95/EC 2002/96/EC BYWF29 byw 150 diode byw 81 200 diode BYW 66 JESD22-B102D J-STD-002B

    Untitled

    Abstract: No abstract text available
    Text: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability


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    PDF J-STD-020, O-263AB O-220AC ITO-220AC 2002/95/EC 2002/96/EC ITO-220AC O-220AC BYW29 BYWF29

    diode BYW 66

    Abstract: BYW29 JESD22-B102 J-STD-002 BYW29-200-E3 byw 91-4
    Text: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability


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    PDF J-STD-020, O-263AB O-220AC ITO-220AC 2002/95/EC 2002/96/EC ITO-220AC O-220AC BYW29 BYWF29 diode BYW 66 JESD22-B102 J-STD-002 BYW29-200-E3 byw 91-4

    byw 91-4

    Abstract: BYW series byw29
    Text: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability


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    PDF O-220AC ITO-220AC BYW29 BYWF29 O-263AB J-STD-020C, ITO-220AC 2002/95/EC byw 91-4 BYW series

    Untitled

    Abstract: No abstract text available
    Text: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability


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    PDF O-220AC ITO-220AC BYW29 BYWF29 O-263AB J-STD-020, ITO-220AC 2002/95/EC

    byw 04-15

    Abstract: BYW29 JESD22-B102D J-STD-002B byw 91-4
    Text: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction ITO-220AC TO-220AC • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop 2 BYW29 Series


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    PDF ITO-220AC O-220AC BYW29 O-263AB BYWF29 O-263AB BYWB29 2002/95/EC 2002/96/EC J-STD-020C byw 04-15 JESD22-B102D J-STD-002B byw 91-4

    BYW295

    Abstract: No abstract text available
    Text: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability


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    PDF O-220AC ITO-220AC BYW29 BYWF29 O-263AB J-STD-020, ITO-220AC 2002/95/EC BYW295

    BYW29

    Abstract: JESD22-B102 J-STD-002
    Text: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability


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    PDF J-STD-020, O-263AB O-220AC ITO-220AC 2002/95/EC 2002/96/EC ITO-220AC O-220AC BYW29 BYWF29 JESD22-B102 J-STD-002

    byw 150

    Abstract: No abstract text available
    Text: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time ITO-220AC TO-220AC • Low switching losses, high efficiency • Low forward voltage drop 2 BYW29 Series


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    PDF O-220AC ITO-220AC J-STD-020C, O-263AB O-220AC ITO-220AC 2002/95/EC 2002/96/EC O-220AC, ITO-220AC, byw 150

    ACPF-7124

    Abstract: ACFF-1024 LTE filter 2320 ism bandpass filter wifi 2.4 ghz pcb layout LTE filter band 40 wifi circuit board diagram wifi file transfer and storage system circuit diagram LTE filter band 13
    Text: ACFF-1024 ISM Bandpass Filter 2401 – 2482 MHz Data Sheet Description Features The Avago ACFF-1024 is a miniaturized Bandpass Filter designed for use in the 2.4 GHz Industrial, Scientific and Medical (ISM) band. • 50 Ω Input/Output The ACFF-1024 is designed to enable concurrent operation of Wireless LAN and Bluetooth applications that coexist with other wireless standards, such as 2.5 GHz WiMAX,


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    PDF ACFF-1024 ACFF-1024 AV02-3973EN ACPF-7124 LTE filter 2320 ism bandpass filter wifi 2.4 ghz pcb layout LTE filter band 40 wifi circuit board diagram wifi file transfer and storage system circuit diagram LTE filter band 13

    Untitled

    Abstract: No abstract text available
    Text: ACFF-1024 ISM Bandpass Filter 2401 – 2482 MHz Data Sheet Description Features The Avago ACFF-1024 is a miniaturized Bandpass Filter designed for use in the 2.4 GHz Industrial, Scientific and Medical (ISM) band. • 50 Ω Input/Output The ACFF-1024 is designed to enable concurrent operation of Wireless LAN and Bluetooth applications that coexist with other wireless standards, such as 2.5 GHz WiMAX,


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    PDF ACFF-1024 ACFF-1024 AV02-3973EN

    ACPF-7124

    Abstract: No abstract text available
    Text: ACFF-1024 ISM Bandpass Filter 2401 – 2482 MHz Data Sheet Description Features The Avago ACFF-1024 is a miniaturized Bandpass Filter designed for use in the 2.4 GHz Industrial, Scientific and Medical (ISM) band. • 50 Ω Input/Output The ACFF-1024 is designed to enable concurrent operation of Wireless LAN and Bluetooth applications that coexist with other wireless standards, such as 2.5 GHz WiMAX,


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    PDF ACFF-1024 ACFF-1024 AV02-3973EN ACPF-7124

    BYW29

    Abstract: BYW29-100 BYW29-150 BYW29-50 UES1401 UES1402 UES1403 es1403
    Text: RECTIFIERS BYW29-50 UES1401 BYW29-100 UES1402 BYW 29-150 UES1403 High Efficiency, 7A and 8A DESCRIPTION The B YW 29/U ES1400 Series, in a plastic package sim ilar to the T0-220, is specifically designed for operation in power switching circuits to frequencies in excess of lOOKHz.


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    PDF BYW29-50 UES1401 BYW29-100 UES1402 BYW29-150 UES1403 BYW29/UES1400 O-220, BYW29 UES1403 es1403

    esja

    Abstract: ESJC ESJA82-12 BYV 35 esjc 0309 ESJA 52-12
    Text: Epitaxial Rectifier Diodes A tA = 25°C vF V ~ ¡F = I favm tv, = 25°C • ■ ■ ■ BYV 32-150 150 BYV 32-200 200 BYW 29-200 200 Not for new design 2x10 2x10 8 150 150 80 < 1,15 < 1,15 < 1,3 Ifsm Ifavm A t=8,3ms tvj = 25°C mA Ir trr outline mA ns < 35


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    PDF ESJA82-12 esja ESJC ESJA82-12 BYV 35 esjc 0309 ESJA 52-12

    BYV255V200

    Abstract: byw29e150 MUR460 MUR880 BYV255V-200 EGP10G EGP20D EGP50D EGP50G MUR120
    Text: ww w.i-t.su ¡nfo@ i-t.su k lH T E P T E K C electronics Ten\ 495 739-09-95, 644-41-29 C B e p x ö b iC T p b ie B b in p A M M T e n b H b ie flM O A b i Kofl: I Fmax Vf [B] [A] [B] B YW 100/200 EGP20D 200 200 1,5 2,0 BYW 98/200 EGP50D EGP50G UF5404 UF5408


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    PDF BYW100/200 EGP20D BYW98/200 EGP50D EGP50G UF5404 UF5408 MUR420 MUR460 MUR120 BYV255V200 byw29e150 MUR880 BYV255V-200 EGP10G

    byw 150

    Abstract: BYW 200 BYV 35 77150 BYV 77 diodes byw 51 100 Thomson-CSF rectifier BYW 29 500 BYW 98/100 BYV+80+-+200
    Text: high efficiency fast recovery rectifier diodes diodes de redressement rapide à haut rendement Types •o VRRM ■f s m 10 m s A (V) (A) 3 A / Tcase = 85°C BYW BYW BYW BYW Tj = 150°C 9 8 - 50 98 -100 98 -150 98 -200 7 A / Tcase = 130°C BYW BYW BYW BYW


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    PDF CB-197) ICB-22 CB-19) byw 150 BYW 200 BYV 35 77150 BYV 77 diodes byw 51 100 Thomson-CSF rectifier BYW 29 500 BYW 98/100 BYV+80+-+200

    TFK diodes BYW 76

    Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
    Text: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35


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    LDR 03

    Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
    Text: Halbleiter­ bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren


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    Rectifier t2d

    Abstract: t2d diodes T2D 53 BYW29 BYW29-200 BYW29F-200 ISOWATT220AC "T2D"
    Text: SGS-THOMSON BYW29 F HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES FEATURES • SUITED FOR SMPS . VERY LOW FORW ARD LOSSES ■ NEGLIGIBLE SW ITCHING LOSSES ■ HIGH SURGE CURR ENT CAPABILITY ■ HIGH AVALANC HE ENERGY CAPABILITY ■ INSULATED VERSION (ISOW ATT220AC)


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    PDF BYW29 ISOWATT220AC) T0220AC ISOWATT220AC T0220AC BYW29-200 ISOWATT220AC BYW29F-200 7cJ2ci237 Rectifier t2d t2d diodes T2D 53 BYW29-200 BYW29F-200 "T2D"

    BYW29E-100

    Abstract: T0220AB byw29e to3 HEATSINK BYW29E100
    Text: P H ILIP S INTERNATIONAL D ata sheet status Preliminary specification d ate of issue February 1991 G ENERA L DESCRIPTION Glass passivated, high efficiency, rugged epitaxial rectifier diodes in plastic envelopes, featuring low forward voltage drop, ultra-fast


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    PDF BYW29E-100/150/200 T0220AB 711002b 00242GÃ T0220AC; T0220 BYW29E-100 T0220AB byw29e to3 HEATSINK BYW29E100

    cqx 87

    Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
    Text: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157


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    PDF AA113 AA117 AA119 BAV17 BAV18 BAV19 BAV20 BAV21 cqx 87 germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175

    RPY 86

    Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
    Text: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ­


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    BYW29-150 diode

    Abstract: BVW29-50 BYW29 BYW29-150 BYW29-200 BYW29-100 byw80 bvw29 BYW80-100 BYW80-150
    Text: RECTIFIERS UES1401 UES1402 UES1403 UES1404 High Efficiency, 7 A and 8A FEATURES • Very Low Forward Vottage • Very Fast Recovery Times • Economical, Convenient Plastic Package • Low Therm al Resistance • M echanically Rugged BYW29-50 BYW29-100 BYW29-150


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    PDF UES1401 BYW29-50 BYW80-50 UES1402 BYW29-100 BYW80-100 UES1403 BYW29-150 BYW80-150 UES1404 BYW29-150 diode BVW29-50 BYW29 BYW29-200 byw80 bvw29

    DYW29-150

    Abstract: es140 byw80 BYW29 diode rectifier BYW29-100 BYW29-150 byw29100 BYW80-50 BYW29-50 UES1404
    Text: UES1401 UES1402 UES1403 UES1404 RECTIFIERS High Efficiency, 7A and 8A FEATURES • Very Low Forward Voltage • Very Fast Recovery Tim es • Econom ical, Convenient Plastic Package • Low Therm al Resistance • M echanically Rugged BYW29-50 BYW29-100 BYW29-150


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    PDF UES1401 BYW29-50 BYW80-50 UES1402 BYW29-100 BYW80-100 UES1403 BYW29-150 BYW80-150 BYW29-200 DYW29-150 es140 byw80 BYW29 diode rectifier byw29100 UES1404