MX10E8050IQC
Abstract: MX10E8050IUC dsca 125 MX10E8050IPC byx 21
Text: PRELIMINARY MX10E8050I FEATURES - 80C51 CPU core - 3.0 ~ 3.6V voltage range - On-chip Flash program memory with in-system programming ISP - Operating frequency up to 40MHz - 64K bytes Flash memory for code memory - 1280 bytes internal data RAM - Low power consumption
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MX10E8050I
80C51
40MHz
16-bit
400kb/s
MX10E8050IPC
40pin
MX10E8050IQC
44pin
MX10E8050IUC
MX10E8050IQC
MX10E8050IUC
dsca 125
MX10E8050IPC
byx 21
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DSCA 114 communication board
Abstract: MX10E8050IQC BYX 13 400 R
Text: PRELIMINARY MX10E8050I MX10E8050X Major Difference Product Feature Default ISP IAP Package Clock mode MX10E8050IPC MX10E8050IQC 40Pin PDIP x 12 YES YES 44Pin PLCC MX10E8050IUC 44Pin LQFP MX10E8050XPC 40Pin PDIP MX10E8050XQC x6 NO NO MX10E8050XUC P/N:PM0887
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MX10E8050I
MX10E8050X
MX10E8050IPC
MX10E8050IQC
MX10E8050IUC
MX10E8050XPC
MX10E8050XQC
MX10E8050XUC
40Pin
44Pin
DSCA 114 communication board
BYX 13 400 R
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MB88F332
Abstract: apix IC201-001 CU80F Cu80 FPT-208P-M06 MB88F33
Text: FUJITSU SEMICONDUCTOR MB88F332 FLASH Memory Product Parallel Writer Specification Ver.1.0 FUJITSU MICROELECTRONICS LIMITED 【Revision History】 Ver. 1.0 Data 2008/12/16 Description First Editinon 【Overview】 Items Detail Product name MB88F332 FLASH memory size
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MB88F332
160KB
58000H
FPT-208P-M06
IC201-001
CU80F
MB88F332
apix
IC201-001
CU80F
Cu80
FPT-208P-M06
MB88F33
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TPS73101-EP
Abstract: TPS73115-EP TPS73150-EP TPS731125-EP TPS73125-EP TPS73132-EP TPS73118-EP TPS73133-EP TPS73130-EP
Text: TPS731xx www.ti.com . SBVS034M – SEPTEMBER 2003 – REVISED AUGUST 2009 Cap-Free, NMOS, 150mA Low Dropout Regulator with Reverse Current Protection
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TPS731xx
SBVS034M
150mA
30VRMS
10kHz
100kHz)
TPS73101-EP
TPS73115-EP
TPS73150-EP
TPS731125-EP
TPS73125-EP
TPS73132-EP
TPS73118-EP
TPS73133-EP
TPS73130-EP
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diode byx 32
Abstract: diode byx diode byx 66-1000 DIODE REDRESSEMENT Diodes de redressement LA 7123 byx 21 diodes redressement thomson alimentation decoupage t03h
Text: S G STC S -¡-THOMSON D | 7 ^ 2 3 7 ÜODaaôT BYX 66-600, R BYX 66-1000, (R) O THOMSON-CSF 'DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH FAST RECOVERY RECTIFIER DIODES DIODES DE REDRESSEMENT RAPIDES 59C 02289 d r^oi-n \ HIGH VOLTAGE SUPERSWITCH RECTIFIERS
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712TE37
180cm
diode byx 32
diode byx
diode byx 66-1000
DIODE REDRESSEMENT
Diodes de redressement
LA 7123
byx 21
diodes redressement thomson
alimentation decoupage
t03h
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BYX 71 800
Abstract: diode byx alimentation decoupage THOMSON byx 21 BYX 71 600 diodes redressement thomson diode byx 66-1000
Text: STC D | S G S-¡-THOMSON O 7 ^ 2 3 7 ÜODaaôT BYX 66-600, R BYX 66-1000, (R) T H O M S O N -C S F 'DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH FAST RECOVERY RECTIFIER DIODES DIODES DE REDRESSEMENT RAPIDES 59C 02289 d r^oi-n \ HIGH VOLTAGE SUPERSWITCH
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case100OC)
CB-425)
CB-262)
CB-262
QDD23t
CB-19)
CB-428)
CB-244
BYX 71 800
diode byx
alimentation decoupage THOMSON
byx 21
BYX 71 600
diodes redressement thomson
diode byx 66-1000
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diode byx
Abstract: BYX67-1000 DIODE REDRESSEMENT BYX 13 400 R byx 21 diode byx 67-1000 diode byx 32 BYX/400 BYX67 400 BYX67-600
Text: STCd S G S—THOMSON O | 7 cî 2 c] c! 3 ? BYX 67-600, R BYX 67-1000, (R) 1 H O M S O N -C S F DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH FAST RECOVERY R EC T IFIE R DIODES DIODES DE REDRESSEMENT RAPIDES 59C 02299 D f-Û HIGH VOLTAGE V RRM 6 0 0 -+ 1 0 0 0 V
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1/4-28UNF
CB-34)
diode byx
BYX67-1000
DIODE REDRESSEMENT
BYX 13 400 R
byx 21
diode byx 67-1000
diode byx 32
BYX/400
BYX67 400
BYX67-600
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diode byx
Abstract: PAS 1066 byx 21
Text: STCd | S G S—THOMSON O 7 cî 2 c] c!3? BYX 67-600, R BYX 67-1000, (R) 1 H O M S O N -C S F DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH FAST RECOVERY RECTIFIER DIODES DIODES DE REDRESSEMENT RAPIDES 59C 02299 D f-Û HIGH VOLTAGE V RRM 600 -+ 1000 V 'F (A V ) <Tcm « 100°C)
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CB-425)
CB-262)
CB-262
CB-19)
CB-428)
CB-244
diode byx
PAS 1066
byx 21
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Untitled
Abstract: No abstract text available
Text: G SÌC D 1• 7=1^23? 00G2271 4 S-TH O M SO N Q BYX 61-50, R BYX 61-400, (R) T H O M S O N -C S F DIVISION SEMICONDUCTEURS DISCRETS SUPEBSWITCH FA ST R EC O V ERY R E C T IF IE R DIODES D IO D E S D E R E D R E S S E M E N T R A P ID E S 59C 02271 d T - o S V / '
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00G2271
CB-262
CB-262)
CB-19)
CB-428)
CB-244
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Untitled
Abstract: No abstract text available
Text: s G S-THOMSON I^ Q uT d” ! 7^5=1237 Q QQ 2 G Û 3 1N 3909—1N 3913, R BYX 64-600, (R) THOMSON-CSF DIVISION SEMICONDUCTEURS DISCRETS. SUPERSWITCH FAST RECOVERY RECTIFIER DIODES D/ODES DE REDRESSEMENT RAPIDES 59 C 0 2 0 8 3 FAST RECOVERY SUPERSWITCH RECTIFIERS
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CB-262
CB-262)
CB-19)
CB-428)
CB-244
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Untitled
Abstract: No abstract text available
Text: £ÿ7 SGS'THOMSON D ^@llLi©ra K!lQ®i BYX 65-50 -> 400 FAST RECOVERY RECTIFIER DIODES • VERY FAST RECOVERY TIME ■ VERY LOW FORWARD RECOVERY TIME ■ VERY LOW RECOVERED CHARGE APPLICATIONS ■ DC AND AC MOTOR CONTROL ■ SWITCH MODE POWER SUPPLY ■ HIGH FREQUENCY CHOPPERS
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65400
Abstract: No abstract text available
Text: S^C D I 7 ^ 2 3 7 -THOMSON 59C 022 80 Q THOMSONaCSF DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH Q0Ü22ÖG 0 7"^ W 7 BYX 6 5 -5 0 , R BYJC 6 5 “ 4 0 0 (R) F A S T R E C O V E R Y R E C T IF IE R D IO DES DIODES DE REDRESSEMENT RAPIDES FAST RECOVERY
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CB-262
CB-262)
CB-19)
CB-428)
CB-244
65400
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Untitled
Abstract: No abstract text available
Text: SÌC S G S-THGMSON D | 7^2^37 D0Ü2Q7M T:.ù X '/ ? 5 9C 02074 D 1 N 3 8 9 9 —1 N 3 9 0 3 , R O THOMSON-CSF DIVISION SEMICONDUCTEURS DISCRETS BYX 6 3 -6 0 0 , (R) SUPERSWITCH FA ST R ECO V ERY R E C T IF IE R DIODES DIODES DE RED R ESSEM EN T RAPID ES
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Tcaje100OCÂ
CB-428)
55depth
CB-19)
CB-244
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BYX58-200
Abstract: byx 21 BYX 13 400 R Diodes de redressement MR05 PY 55 byx58
Text: DIODES DE R E D R E SSE M E N T RAPIDE fast recovery rectifier diodes V r WM TYPES / 100 m A *M R *M R *M R *M R •M R / 400 m A 22 42 43 44 45 / * BA 157 * BA 158 * BA 159 / 1 A / * LQ 1 tamb — 25 C / 2 4 6 8 tamb = 25°C / PLR2T PLR 8 T PL R 15 T 1 A
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100mA
BYX58-200
byx 21
BYX 13 400 R
Diodes de redressement
MR05
PY 55
byx58
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sy 170
Abstract: SY 356 SY 360 05 sy 710 sy 360 Dioden SY 250 byx 21 SY 320 sy710 Halbleiterbauelemente DDR
Text: FUNKAMATEUR-Bauelementeinformation VD Vergleichsliste für Dioden DDR/international D D R - Vergleichs Typ typ GA 100 G A 101 G A 102 GA 104 G A 105 GAY 61 GAY 64 SA 412 SA 415 SA 418 SAY 12 SAY 16 o SAY 17 SAY 18 SAY 20 SAY 30 SAY 32 SAY 40 SAY 42 SY 170
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N4001.
sy 170
SY 356
SY 360 05
sy 710
sy 360
Dioden SY 250
byx 21
SY 320
sy710
Halbleiterbauelemente DDR
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Diode 1N4007 DO-7 Rectifier Diode
Abstract: 1N40075 BYX/400 1N4007 RECTIFIER DIODE 4007 uf 1200 BAX12 BYW52 BYW53 BYW54 BYW55
Text: Diodes Rectifier and Avalanche diodes Type BY 202 BY 203 BY 204 Maximum ratings Notes Characteristics V 4 8006 90 <300 £ 1 .0 200 £ 507) Contact protection diode 2 5 1000') 200 £100 £ 1 .2 1000 £ 3503) Fast rectifier diodes 3 5 1000') 300 £100 <1.2
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BAX12
F1000
1N4001
1N4002
1N4003
1N4004
1N4006
1N4007
Diode 1N4007 DO-7 Rectifier Diode
1N40075
BYX/400
1N4007 RECTIFIER DIODE
4007 uf 1200
BAX12
BYW52
BYW53
BYW54
BYW55
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LDR 03
Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
Text: Halbleiter bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren
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Untitled
Abstract: No abstract text available
Text: SÌC D I 7 ^ 2 3 7 -THOMSON _ 59C 02065 O THOMSON-CSF DGDEGbS 1 _ D*T' e 3 ' / 7 ~ 1 N 3 8 8 9 ^ 1 N 3 8 9 3 , R B Y X 6 2 6 0 0 (R) DIVISION SEMICONDUCTEURS DISCRETS , SUPERSWITCH FAST RECOVERY RECTIFIER DIODES DIODES DE REDRESSEMENT RAPIDES FAST RECOVERY
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100OC)
CB-262
CB-262)
CB-19)
CB-428)
CB-244
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RPY 86
Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
Text: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ
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axial zener diodes marking code c3v6
Abstract: H 48 zener diode ZENER DIODES CODE ID CHART diode zener ph c5v6 74151N HS7030 sescosem SESCOSEM semiconductor diode zener BZX 61 C 10 BZX 460 zener diode
Text: SESCOSEM Introduction Sescosem, Societe Europeenne de Semiconducteurs et de Microelectronique, is a branch of the Thomson-CSF Group, one of the world’s largest High Technology combines which includes Ducati Microfaro, LCC-CICE, COFELEC and many other companies.
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BR805A
BR81A
BR82A
BR84A
BR86A
BR88A
BR91A
BR92A
BR94A
BR96A
axial zener diodes marking code c3v6
H 48 zener diode
ZENER DIODES CODE ID CHART
diode zener ph c5v6
74151N
HS7030
sescosem
SESCOSEM semiconductor
diode zener BZX 61 C 10
BZX 460 zener diode
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Diode KD 514
Abstract: B30C250 GD507A DIODE OA-172 kyx 28 SY360 ky 202 h thyristor B280C1500 C5000-3300 BZY79C
Text: Deutsche Post Studiotechnik Fernsehen BauelementeMitteilunq Nr.7 Diodenvergleichsliste Verfasser: Dipl.-Ing. Klaus-Peter Hartmann Abteilung PMM Herausgeber: \>y Studiotechnik Fernsehen Informationsstelle RIS 1429 1 19 9 Berlin Rudower Chaussee 3 Fernruf: 6 7 3 3381
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BYX 71 800
Abstract: BYX 71 600 VENUS 7110-0
Text: Sb E D • 7^2=1237 0041^35 5Q4 ■ S G T H S G S- TH OM SON SCS-THOMSON T '0 J 'f 7 ’ B Y T 71-100 A iL ^ H M O Û S 800 A FAST RECOVERY RECTIFIER DIODES ■ HIGH VOLTAGE CAPABILITY ■ FAST AND SOFT RECOVERY ■ THE SPECIFICATIONS AND CURVES EN ABLE THE DETERMINATION OF trr AND Irm
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80100IA/jÂ
100IA
BYX 71 800
BYX 71 600
VENUS
7110-0
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AC125K
Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
Text: TUNGSRAM 1 ELECTRON TUBES AND SEMI CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T
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76665N
76889N
MA748PC
MA709PC
jA710PC
A711PC
iA712PC
A723PC
HA741PC
A747PC
AC125K
6AN7
tungsram 3S035T-1
ecc83 application notes
ECL86
DG 7-123
tungsram
AC125UZ
PENTODE pl 508
ot-400 tungsram
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Untitled
Abstract: No abstract text available
Text: Communication ICs Read/Write Amplifier for FDD BH6629BFS T h e B H 6 6 2 9 B F S , a r e a d /w r ite 1C d e s ig n e d fo r flo p p y d is k d riv e s , has a re c o rd in g s y s te m th a t p u ts to p p rio rity on s a d d le m a rg in . O ffe rs m u lti-s te p s w itc h in g o f w rite c u rre n t, w h ile d e n s ity a n d in n e r e d g e /o u te r e d g e a re s w itc h e d
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BH6629BFS
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