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    CU80 Price and Stock

    Micro Commercial Components MCU80N06-TP

    MOSFET N-CH 60V 80A DPAK
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    DigiKey MCU80N06-TP Cut Tape 31,886 1
    • 1 $2.02
    • 10 $1.29
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    • 1000 $0.63484
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    MCU80N06-TP Digi-Reel 31,886 1
    • 1 $2.02
    • 10 $1.29
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    MCU80N06-TP Reel 25,000 2,500
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    • 10000 $0.57252
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    Micro Commercial Components MCU80N03-TP

    MOSFET N-CH 30V 80A DPAK
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    DigiKey MCU80N03-TP Digi-Reel 8,992 1
    • 1 $1.04
    • 10 $0.651
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    MCU80N03-TP Cut Tape 8,992 1
    • 1 $1.04
    • 10 $0.651
    • 100 $1.04
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    MCU80N03-TP Reel 5,000 2,500
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    Mouser Electronics MCU80N03-TP 2,215
    • 1 $0.64
    • 10 $0.558
    • 100 $0.387
    • 1000 $0.275
    • 10000 $0.214
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    Micro Commercial Components MCU80N06A-TP

    MOSFET N-CH 60V 80A DPAK
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    DigiKey MCU80N06A-TP Cut Tape 4,362 1
    • 1 $1.37
    • 10 $0.866
    • 100 $1.37
    • 1000 $0.40772
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    MCU80N06A-TP Digi-Reel 4,362 1
    • 1 $1.37
    • 10 $0.866
    • 100 $1.37
    • 1000 $0.40772
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    MCU80N06A-TP Reel 2,500 2,500
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    New Advantage Corporation MCU80N06A-TP 12,500 1
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    Micro Commercial Components MCU80N03A-TP

    MOSFET N-CH 30V 80A DPAK
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    DigiKey MCU80N03A-TP Digi-Reel 3,551 1
    • 1 $0.95
    • 10 $0.594
    • 100 $0.95
    • 1000 $0.26866
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    MCU80N03A-TP Cut Tape 3,551 1
    • 1 $0.95
    • 10 $0.594
    • 100 $0.95
    • 1000 $0.26866
    • 10000 $0.26866
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    MCU80N03A-TP Reel 2,500 2,500
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    Mouser Electronics MCU80N03A-TP 24,212
    • 1 $0.56
    • 10 $0.491
    • 100 $0.337
    • 1000 $0.242
    • 10000 $0.189
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    Micro Commercial Components MCU80P06Y-TP

    P-CHANNEL MOSFET,DPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MCU80P06Y-TP Cut Tape 1,983 1
    • 1 $2.96
    • 10 $1.919
    • 100 $2.96
    • 1000 $0.9899
    • 10000 $0.9899
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    MCU80P06Y-TP Digi-Reel 1,983 1
    • 1 $2.96
    • 10 $1.919
    • 100 $2.96
    • 1000 $0.9899
    • 10000 $0.9899
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    Mouser Electronics MCU80P06Y-TP
    • 1 $2.15
    • 10 $1.79
    • 100 $1.42
    • 1000 $1.02
    • 10000 $0.935
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    New Advantage Corporation MCU80P06Y-TP 10,000 1
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    • 10000 $1.17
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    CU80 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CU8005-0000

    Abstract: CU8805
    Text: CU8005-0000 4 port USB 2.0 hub Version: 1.1 Date: 2007-06-11 Table of Contents Table of Contents 1 Foreword 1 1.1 Notes on the documentation 1 1.1.1 1.1.2 1.1.3 1 1 1 1.2 2 3 2 1.2.1 1.2.2 2 2 State at Delivery Description of safety symbols 3 2.1 2.2 2.3 3


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    PDF CU8005-0000 CU8005-0000 CU8805

    CU8004-0000

    Abstract: CU8805 usbhub CU8805-0000 belegung klemme
    Text: CU8005-0000 4-Port USB 2.0 Hub Version: 1.1 Datum: 11.06.2007 Inhaltsverzeichnis Inhaltsverzeichnis 1 Vorwort 1.1 1.2 2 3 1 1.1.1 1.1.2 1.1.3 1 1 1 Haftungsbedingungen Lieferbedingungen Copyright Sicherheitshinweise 2 1.2.1 1.2.2 2 2 Auslieferungszustand Erklärung der Sicherheitssymbole


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    PDF CU8005-0000 CU8004-0000 CU8805 usbhub CU8805-0000 belegung klemme

    Untitled

    Abstract: No abstract text available
    Text: SPECIFICATION FOR APPROVAL REF. : CU8043□□□□L□-□□□ ABC'S DWG NO. PROD. Shielded SMD Power Inductor NAME REV. PAGE 20130417-B 1 Ⅰ﹒Configuration and dimensions: A B 100 C F L E H L D G J PCB Pattern Unit:m/m A B C D E 8.00±0.3 8.20±0.3


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    PDF CU8043â 20130417-B 30sec 60sec 150sec MIL-STD-202 JESD22-B111 JIS-C-6429 AR-001C

    Untitled

    Abstract: No abstract text available
    Text: SPECIFICATION FOR APPROVAL REF. : CU8030□□□□L□-□□□ ABC'S DWG NO. PROD. Shielded SMD Power Inductor NAME REV. 20130902-B PAGE 1 Ⅰ﹒Configuration and dimensions: A B 100 C F L E H L D G J PCB Pattern Unit:m/m A B C D E F G H 8.00±0.3


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    PDF CU8030â 20130902-B MIL-STD-202 JESD22-B111 JIS-C-6429 AR-001C

    CUSB-B-F1-RA-BF90-WT-TH

    Abstract: No abstract text available
    Text: 1 2 3 4 5 6 7 8 9 A A B B C C SPECIFICATIONS Housing: Contact: Contact Plating: Shell: Shell Plating: Contact Resistance: Insulation Resistance: Withstanding: Operating Temp: Furnace Temp: D E F D LCP Glass Fiber UL94V-0 Brass T=0.25mm Au1u”+Sn80~100u”+Ni60u”


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    PDF UL94V-0 Ni60uâ Ni100uâ CUSB-B-F1-RA-BF90-WT-TH CUSB-B-F1-RA-BF90-WT-TH

    MB88F332

    Abstract: 180NM cmos process parameters apix ashell LSI FUJITSU INAP125 lcd ttl tcon ARGB8888 TFT LCD n96 EGS02 TFT LCD panel 1.8"
    Text: MB88F332 LSI Product Specifications 3th December, 2008 Edition 0.981 FUJITSU PROPRIETARY AND CONFIDENTIAL MB88F332 LSI Product Specifications Preface Objectives and Intended Reader Thank you very much for your continued special support for Fujitsu semiconductor products.


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    PDF MB88F332 MB88F332. 180NM cmos process parameters apix ashell LSI FUJITSU INAP125 lcd ttl tcon ARGB8888 TFT LCD n96 EGS02 TFT LCD panel 1.8"

    IXYS DSA 9-16F

    Abstract: No abstract text available
    Text: DS 9 DSA 9 Rectifier Diodes Avalanche Diodes VRSM V 900 1300 1700 1900 V BR min ① VRRM V V 1300 1750 1950 800 1200 1600 1800 VRRM = 800 - 1800 V IF(RMS) = 18 A IF(AV)M = 11 A Standard Avalanche Types Types DS 9-08F DS 9-12F A C DO-203 AA C DSA 9-12F DSA 9-16F


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    PDF DO-203 9-08F 9-12F 9-16F 9-18F IXYS DSA 9-16F

    IXYS DSA 9-12F

    Abstract: DIODE DSA 18 DIODE DSA 9-16F diode avalanche DSA
    Text: DS 9 DSA 9 VRRM = 800-1800 V IF RMS = 18 A IF(AV)M = 11 A Rectifier Diode Avalanche Diode VRSM V 900 1300 1700 1900 V(BR)minÿ① VRRM V V 1300 1750 1950 800 1200 1600 1800 Standard Avalanche Types Types DS 9-08F DS 9-12F A C DO-203 AA C DSA 9-12F DSA 9-16F


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    PDF DO-203 9-08F 9-12F 9-16F 9-18F IXYS DSA 9-12F DIODE DSA 18 DIODE DSA 9-16F diode avalanche DSA

    IXYS DSA 1-16D

    Abstract: DIODE DSA 1-16D DO-205ACDO-30 pwm INVERTER welder diode avalanche DSA VRRM 2300 1718a 110-12F IXYS DSA DSI 35-08A 117 L DS35Q
    Text: Discrete Rectifier and Avalanche Diodes Contents 1 2 3 Type Page 1800 1600 1400 A VRRM/VDRM V 800 IF(AV)M 1200 Package style 1 2.3 ● ● DS 1 ● ● DSA 1 D5 - 2 2 3.6 ● ● ● DS 2 ● ● DSA 2 D5 - 3 3 2x11 4 ● ● ● ● 5 ● ● ● DS 9 ● ● DSA 9


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    PDF D5-10 D5-14 IXYS DSA 1-16D DIODE DSA 1-16D DO-205ACDO-30 pwm INVERTER welder diode avalanche DSA VRRM 2300 1718a 110-12F IXYS DSA DSI 35-08A 117 L DS35Q

    9-16F

    Abstract: do-203 IXYS DSA 9-12F DIODE DSA 18 IXYS DSA 9-16F
    Text: DSA 9 Avalanche Diode VRRM V V V 1300 1700 1900 1300 1750 1950 1200 1600 1800 Type A C DO-203 AA C DSA 9-12F DSA 9-16F DSA 9-18F A A = Anode, C = Cathode Symbol Conditions IFRMS IFAVM TVJ = TVJM TC = 150°C; 180° sine 18 11 A A PRSM TVJM, tp = 10 ms 4.5 kW


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    PDF DO-203 9-12F 9-16F 9-18F 20110114a 9-16F IXYS DSA 9-12F DIODE DSA 18 IXYS DSA 9-16F

    180NM cmos process parameters

    Abstract: MB88F332 APIX2 gi 9448 1280x480 apix ashell PTMR05 TFT LCD n96 EGS02 rgb888 to rgb666
    Text: MB88F332 LSI Product Specifications MB88F332 LSI Product Specifications 12th August, 2009 Edition 1.1 FUJITSU MICROELECTRONICS PROPRIETARY AND CONFIDENTIAL i MB88F332 LSI Product Specifications Preface Objectives and Intended Reader Thank you very much for your continued special support for Fujitsu semiconductor products.


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    PDF MB88F332 MB88F332. 180NM cmos process parameters APIX2 gi 9448 1280x480 apix ashell PTMR05 TFT LCD n96 EGS02 rgb888 to rgb666

    60227 IEC

    Abstract: QO170 photovoltaic cell ana 650 STRV00121 DE312 C60H Circuit Breakers Catalogue PJL36120 0611CT1001 QO816L100 QOB3150VH
    Text: DE3_p01.fm Page 1 Saturday, January 10, 2015 2:04 AM Circuit Breakers Selection Guide QO and QOU Miniature Circuit Breakers H-Frame J-Frame L-Frame M-Frame P-Frame R-Frame DE3-10 QO™ Miniature Circuit Breakers DE3-10 QO™ Circuit Breaker Accessories


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    PDF DE3-10 DE3-12 DE3-13 DE3-14 DE3-15 DE3-16 DE3-21 DE3-22 DE3-24 DE3-25 60227 IEC QO170 photovoltaic cell ana 650 STRV00121 DE312 C60H Circuit Breakers Catalogue PJL36120 0611CT1001 QO816L100 QOB3150VH

    Untitled

    Abstract: No abstract text available
    Text: DSA 9 VRRM = 1200-1800 V IF RMS = 18 A IFAVM = 11 A Avalanche Diode VRSM V(BR)min VRRM V V V 1300 1700 1900 1300 1750 1950 1200 1600 1800 Type A C DO-203 AA C DSA 9-12F DSA 9-16F DSA 9-18F A A = Anode, C = Cathode Symbol Conditions IFRMS IFAVM TVJ = TVJM


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    PDF DO-203 9-12F 9-16F 9-18F 20110114a

    Untitled

    Abstract: No abstract text available
    Text: Content BOWEI INTEGRATED CIRCUITS CO.,LTD. l LC Filter Outline Drawings -l Miniature LC Bandpass Filter -l Miniature LC Lowpass Filter -l


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    PDF MFSS-30-90 DIP24 MFSS-90-200-4 MFSS-200-400 MFSS-225-512-4 MFSS-400-700-4

    Cu80

    Abstract: diode 4148 specification diode 4148 in 4148 78min UBR100
    Text: Technical specification Page 1 Pages 2 Chip for silicon switching diode Type: 1N 4148 chip size 0,28 х 0,28 mm Diameter of wafer Sizes of chip F/2 100 mm 0,28 х 0,28 mm А B 170 ± 10 µm C 50 ± 5 µm D 140 ± 20 µm Metallization of planar side V - Ag


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    PDF Ag-15% Cu80 diode 4148 specification diode 4148 in 4148 78min UBR100

    MSG100L41

    Abstract: TSS1G41 SF5B42 SM6G14 TSS2G41 1J44 1J-44 TSS25J47S TSS2J2A44S f0r3g
    Text: •A L P H A N U M E R IC A L IN D E X # Type No. CU16J6S3 CU16L6A3 CU16Q6S3 CU30J6S3 CU30L6A3 CU30Q6S3 CU50J6S3 CU50L6A3 CU50Q6S3 CU80J6S3 CU80L6A3 CU80Q6S3 CU80U6A3 CU150J6S3 CU150L6A3 CU150Q6S3 CU150U6A3 CU300J6S3 CU300F6A3 CU300Q6S3 CU300U6A3 MSA60G41


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    PDF CU16J6S3 CU16L6A3 CU16Q6S3 CU30J6S3 CU30L6A3 CU30Q6S3 CU50J6S3 CU50L6A3 CU50Q6S3 CU80J6S3 MSG100L41 TSS1G41 SF5B42 SM6G14 TSS2G41 1J44 1J-44 TSS25J47S TSS2J2A44S f0r3g

    ic ns 4263

    Abstract: No abstract text available
    Text: GM71C4263C GM71CS4263CL LG S e m ic o r t C o .,L td . 262,144 WORDS x 16 BIT CMOS DYNAMIC RAM # Description Features The GM71C S 4263C/CL is the new generation dynamic RAM organized 262,144 x 16 bit. GM71C (S)4263 C/CL has realized higher density, higher performance and various


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    PDF GM71C4263C GM71CS4263CL GM71C 4263C/CL GM71C 0D07bStl ic ns 4263

    THREE PHASE ISOLATION TRANSFORMER CONSTRUCTION DETAIL

    Abstract: step down transformer induction heating manual CU16J6 CU16J6S3
    Text: = s ^ TR0LUNIT— CU16J6S3 CU300Q6S3 FOR THREE PHASE AC CONTROL CU300Q6S3 series are conbined a thyristor stack and a gate unit GU-6B and when the three phase power supply and the load are connected to this control unit, the three phase AC control circuit are easily combined.


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    PDF CU16J6S3 CU300Q6S3 CU300Q6S3 CU150 THREE PHASE ISOLATION TRANSFORMER CONSTRUCTION DETAIL step down transformer induction heating manual CU16J6

    FOR5J

    Abstract: GTO thyristor 100A, 400V TO-220AH TSZ25G 5F13 TSS1G41 s6565g GTO thyristor 5A, 400V MSG100L41 TSS2G41S
    Text: [ Thyristors P h a s e Control T h yristo rs : * i'eak off state v<>!t,tK<‘ and tewrse voilage Average "n-state current 50V 0. IA 0.3A 0.5A IA 2A S F 0 K ÎA 4 2 3A 100V SF0 R 1 H 4 2 SF0 R 3 H 4 2 SFOH5H43 SM H12 S F2 B 4 1 SF3 H 1 4 SF3H41 SF3 H 4 2 SF5 H 1 3


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    PDF SFOH5H43 SF3H41 SF5H41 1000A I500A SF1500C SF1500J27 SF500H27 SF600H27 SF500D27 FOR5J GTO thyristor 100A, 400V TO-220AH TSZ25G 5F13 TSS1G41 s6565g GTO thyristor 5A, 400V MSG100L41 TSS2G41S

    NT101

    Abstract: CM800HA-24H NT-101
    Text: CM800HA-24H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 S in Q lG IGBTMOD H-Series Module 800 Amperes/1200 Volts Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists


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    PDF CM800HA-24H Amperes/1200 G0Cm42 NT101 NT-101

    Untitled

    Abstract: No abstract text available
    Text: 9097250 TOSHIBA <DISCRETE/OPTO J 39C 02 3 6 5 35- g 3 THYRISTROR CONTROL UNIT 3-PHASE BRIDGE CONTROL UNIT) TOSHIBA {DISCRETE/OPT0> C U 300L6A 3, 3T C U 300U 6A 3 2. The g ate can be blocked so th a t th e c u rre n t lim iter c ir ­ T he CU300L6A3/CU300U6A3 s e r ie s is a combination of a


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    PDF 300L6A CU300L6A3/CU300U6A3 0Q02Bt CU300 GU-13 GU16L6A3 CU30L6A3Â CU50L6A3 CU80y6A3 CU150y6A"

    220v dc motor thyristor control

    Abstract: CU16L6A3 Thyristor 220V
    Text: CU16L6A3 CU300U6A3— S S Sr ^ r " 1-“" FOR THREE PHASE COMMUTATION CONTROL CU300U6A3 serires are combined a thyristor stack and a gate unit GU-6B and when the three phase power supply and the load are connected to this control unit, phase commutation control


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    PDF CU16L6A3 CU300U6A3-- CU300U6A3 CU300U6A3 CU16L6A3 CU30L6A3 CL50L6A3 310MAX 220v dc motor thyristor control Thyristor 220V

    GM71C4400

    Abstract: CLZ80 GM71C4400C V888 OF100
    Text: @ LG Semicon. Co. LTD Description Features The GM71C4400C/CL is the new generation dynam ic R A M o rg an ized 1,048,576 x 4 b it. GM71C4400C/CL has realized higher density, higher perform ance and various functions by utilizing a d v a n c e d CM OS p ro c e s s te c h n o lo g y . T he


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    PDF GM71C4400C/CL 300mil 20pin 400mil GM71C4400 CLZ80 GM71C4400C V888 OF100

    C306

    Abstract: No abstract text available
    Text: PROOUCÎ NUU8£R S E E TABLE DIM A ± 010 [ 25] • 2 X 20 STYLE SHOWN % R .0 4 8 [1 2 2 ] - ¥ •DIM C ± 0 1 0 [2 5 ]- <g 0 1 0 /.2 5 .0 1 6 /.4 1 ♦ * .20 [5 .1 ] <§> ® ® X Y AT BASE X Y AT TIPS ® ® ® ® ® ® ® .015 [0 .3 8 ] NOTE 4 * * •010/.25 X Z AT BASE


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    PDF