Untitled
Abstract: No abstract text available
Text: Electrical Characteristics At Ta=25°C, Unless Otherwise Specified Type No. Vzr at IZT min nom (V) rZT 'zt at IZT max f ZK <ZK at IZK max (Ohm) (mA) max (Ohm) (mA) Temp. Coeff. of Zener Voltage typ (%/°C) ' r a* V r Ta 25°C max (MA) VR 'z M PD vF @ lF
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BZX5SC36
BZX55C39
BZX55C43
BZX55C47
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triac zd 607
Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.
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SG73/D
triac zd 607
1n5204
CA2820 TRW
2N4427 equivalent bfr91
2N6823
842 317 SO8
BD243 PINOUT
BD529
bf506
BF845
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C30 DIODE ZENER
Abstract: zener diode BZ 55 zener diode c30 BZX5S c9v* zener c4v3 zener diode bzxs5 BZ 85 18 zener diode BZX55 BZ 85 58 zener diode
Text: BZX55 Silicon P lanar Zener Diodes The Zener voltages are graded according to the international E 24 standard. Other voltage tolerances and higher Zener voltages on request. C athode Mark SP D O -35 G lass Case Weight approx. 0.13 g D im ensions in mm A b solute M axim u m R atings
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BZX55
BZX55.
C30 DIODE ZENER
zener diode BZ 55
zener diode c30
BZX5S
c9v* zener
c4v3 zener diode
bzxs5
BZ 85 18 zener diode
BZX55
BZ 85 58 zener diode
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IRF5402
Abstract: IRFN540 IRFN630 IRFN530 IRFN640 8YV32-5 W06C 2205-M IRFN733 IRFn342
Text: MilitaryAerospace Division M ilitary-Aerospace Division ceram ic surface m ount devices and scree ned to m e e t th e m ost severe T 0 2 2 0 c e r a m ic su rface m o u n t devices A surface m o u n t r e p l a c e m e n t for th e p op ular T 0 2 2 0 M e t a l and T 0 2 5 7 package, the T 0 2 2 0 S M
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BZX55C5V6CSM
T0220SM
2N2222CSM
2N2907CSM
BCW33CSM
BZX55C7V5CSM
2N2369ACSM
2N3209CSM
3250C
BCY59CSM
IRF5402
IRFN540
IRFN630
IRFN530
IRFN640
8YV32-5
W06C
2205-M
IRFN733
IRFn342
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B2X55C
Abstract: B2X55C12 B2X55C15 BZX55C76 BKC Semiconductors
Text: DO-35 glass 0.5 Watt Zener Diodes BZX55C2V4 thru BZX55C75 Use Advantages This family is equivalent to the European PRO Electron types. The specifications reflect similar low zener test currents oyer voltage ranges. For use in clipping and stabilizing circuits, where real protection is needed.
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DO-35
BZX55C2V4
BZX55C75
-213A
681-913B
0D0D74T
B2X55C
B2X55C12
B2X55C15
BZX55C76
BKC Semiconductors
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bzx53c
Abstract: bzx53 BZX66C BZX56 BZX56C33 BZX56C BZX66 BZX88C BZX56-C33 BZX55
Text: FAGOR ELECTRONICS ~TÛ D í f | 3 4 S c] 3 E 5 BZX55C5V1 FAGOR •0.5 W Zener Diodes / . DO-35 Glass Power 0.5 W L (0.149) 38 «-» 61 (2.401) Mounting instructions 1. Min. distance from body to soldering point, 2 mm. 2. Max. solder temperature, 300° C.
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DQDQ173
BZX55C5V1.
BZX55C33V
DO-35
DO-35
BZX55
bzx53c
bzx53
BZX66C
BZX56
BZX56C33
BZX56C
BZX66
BZX88C
BZX56-C33
BZX55
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Untitled
Abstract: No abstract text available
Text: DQ3S Praftired Serial Pro-Etectron Seri— <500 mW Electrical Characteristics At Ta=25°C, Unless Otherwise Specified) Type No. min V ZT rZT at IZT at IZT nom max (V) *ZT rZK 'zk a tlZ K max (Ohm) (mA) max (Ohm) (mA) Temp. Coeff. of Zener Voltage typ (%/°C)
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BZX55C2V4
BZX55C2V7
BZX55C3V0
BZX55C3V3
BZX55C3V9
BZX55C4V3
BZX55C4V7
BZX55C5V1
BZX55C5V6
BZX55C6V2
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BZXS5C6V2
Abstract: BZX55C2V4 BZX55C2V7 BZX55C3V0 BZX55C3V3 BZX55C3V6 BZX55C3V9 BZX55C4V3 BZX55C4V7 BZX55C5V6
Text: DO-35 Preferred Series, Pro-Electron Series 500 mW Electrical Characteristics (At Ta=25°C, Unless Otherwise Specified) Type No. min ^ZT rZT at IZT at IZT nom (V ) max *ZT rZK 'z k at IZK max (Ohm) (mA) max (Ohm) (mA) Temp. Coeff. of Zener Voltage typ (% /°C )
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DO-35
BZX55C2V4
BZX55C2V7
BZX55C3V0
BZX55C3V3
BZX55C3V6
BZX55C3V9
BZX55C4V3
BZX55C11
BZX55C12
BZXS5C6V2
BZX55C4V7
BZX55C5V6
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